GHz Voltage Variable Attenuator (Absorptive)
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- Clinton Hunter
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1 Rev.. February GHz Voltage Variable Attenuator (Absorptive) Features Single Positive Voltage Control: to +5V. 3dB Attenuation Range Low Insertion Loss I/O VSWR <.5 : Low DC power consumption No external matching required.5µm InGaAs phemt technology Chip dimension:.5 x.7 x. mm Functional Diagram 2 6 Driver Typical Applications Automatic gain/level control circuits Cellular GPS 9 +5v Vc 8 Description The AMT232 is a GaAs MMIC Voltage Variable Absorptive Attenuator. It is fabricated using a reliable.5µm InGaAs phemt technology. The device is ideal in designs where an analog DC control signal is required to control signal levels over a 3 db amplitude range. The chip features excellent I/O return losses. It is ideally suited for use where linear attenuation, fine tuning and very low power consumption are required. The key feature of this attenuator is it requires only positive control voltage. DC blocking capacitors are required on both ports. Absolute Maximum Ratings () Parameter Absolute Maximum Units Input Power 25 dbm Control Voltage (VC) 7 Volts Supply Voltage 7 Volts Operating Temperature -55 to 85 Storage Temperature -65 to 5 o C. Operation beyond these limits may cause permanent damage to the component o C Phone: Fax: Page of 5
2 Rev.. February 27 Electrical T A = 25 o C, Z o =5 Ω Parameter Min. Typ. Max. Units Frequency range.5-2. GHz Insertion Loss db Attenuation db Attenuation Flatness - +/- - db VSWR (max.) Ratio. Supply maximum. 2. VC = to maximum. 3. External DC blocking capacitors are required on all ports. Phone: Fax: Page 2 of 5
3 Rev.. February 27 Test fixture data Operating Conditions: Supply Voltage =+5V, control Voltage = - +5V -5 - Attenuation vs. Control Voltage 9 MHz 8 MHz S2 (db) Control Voltage (V) Insertion Loss (db) Insertion Loss vs. Frequency Frequency (GHz) Return loss (db) Return Loss vs. Control Voltgae at 9MHz S S Control Voltage (V) Phone: Fax: Page 3 of 5
4 Rev.. February 27 Mechanical Characteristics.73 [.68].3 [.44] [.44].7 [.27] 6.7 [.27].24 [.9] 9 +5V VC 8.24 [.9].53 [.6] Units: millimeters (inches) All and DC bond pads are µm x µm. Pad no. : 2. Pad no. 3 : GND 3. Pad no. 4 : GND 4. Pad no. 6 : 5. Pad no. 8 : VC ( 5V) 6. Pad no. 9 : +5V Phone: Fax: Page 4 of 5
5 Rev.. February 27 Recommended Assembly Diagram 5 Ohm Transmission Line 3 mil Nominal gap 5 Ohm Transmission Line pf 6 pf +5V VC 9 8. uf. uf mil Gold wire +5V VC ( - 5v). DC blocking capacitors of - 2 pf are required on both ports. 2. Two mil (.254mm) bond wires of minimum length should be used for input and output. 3. Two mil (.254mm) bond wires of minimum length should be used from chip bond pad to pf capacitor. 4. Input and output 5 ohm lines are on 5/ mil substrate. 5.. µf capacitors may be additionally used as a second level of bypass for reliable operation. Die attach: For Epoxy attachment, use of a two-component conductive epoxy is recommended. An epoxy fillet should be visible around the total die periphery. If Eutectic attachment is preferred, use of fluxless AuSn (8/2) -2 mil thick preform solder is recommended. Use of AuGe preform should be strictly avoided. Wire bonding: For DC pad connections use either ball or wedge bonds. For best performance, use of 5-2µm length of wedge bonds is advised. Single Ball bonds of 25-3µm though acceptable, may cause a deviation in performance. GaAs MMIC devices are susceptible to Electrostatic discharge. Proper precautions should be observed during handling, assembly & testing All information and Specifications are subject to change without prior notice Phone: Fax: Page 5 of 5
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Typical Applications v2.97 Features AMPLIFIER, 3.5-7. GHz The HMC392 is ideal for: Gain: 5.5 db Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Noise
More informationCMD GHz Low Noise Amplifier. Functional Block Diagram. Features. Description
Features Functional Block Diagram Ultra low noise performance Low current consumption Small die size GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD6 is a highly efficient GaAs MMIC low noise amplifier ideally
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz. Attenuation Range GHz 31 db
v1.511 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Typical Applications The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More informationFeatures. = +25 C, Vdd= +5V
Typical Applications This is ideal for: Wideband Communication Systems Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation * VSAT Functional Diagram
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v0.0907 HMC37 Typical Applications
More informationCustomised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel
Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised
More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
Typical Applications Functional Diagram v.97 The HMC is ideal for use as a LNA or driver amplifi er for : Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military &
More informationHMC561 FREQUENCY MULTIPLIER - ACTIVE - CHIP. Electrical Specifications, T A. Features. Typical Applications. General Description. Functional Diagram
Typical Applications The HMC51 is suitable for: Clock Generation Applications: SONET OC-19 & SDH STM- Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram Features High
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