GHz 6-Bit Digital Attenuator
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1 GHz 6-Bit Digital Attenuator Features Frequency Range :.5 to 1.5 GHz 31.5dB Attenuation Range 5.2dB Insertion loss max..5db RMS attenuation error 23 max. phase variation 1.6:1 Input\Output VSWR TTL Control Inputs.5µm InGaAs phemt Technology Chip Size : 4. mm x 2.2 mm x.1 mm RF Functional Diagram.5dB 1dB 2dB 4dB 8dB 16dB RF TTL A1 A2 A A4 A A6 +5 GND Typical Applications Radar Military & Space Instrumentation Test and Measurements Instrumentation Applications Description The AMT is a high performance 6-bit digital attenuator MMIC offering an attenuation range of 31.5dB in steps.5db. The attenuator bit values are.5db (LSB), 1,2,4,8 and 16dB (MSB) with a total attenuation of 31.5dB. The attenuator features good attenuation accuracy of +.5dB over.5-6ghz frequency band. The attenuator provides an integral TTL driver, facilitating a 6-bit control. The driver operates on +5/V voltages with minimal DC power consumption. The MMIC die is fabricated using a robust.5µm InGaAs phemt technology. Absolute Maximum Ratings (1) Parameter Absolute Maximum Units RF Input Power 2 dbm Positive Supply Voltage +6 V Negative Supply Voltage -6 V Control Voltage -.5 to +5.5 V Operating Temperature 5 to +85 ºC Storage Temperature -65 to +15 ºC 1. Operation beyond these limits may cause permanent damage to the component Page 1 of 11
2 Electrical Specifications T A = 25 o C, Z o =5 Ω Parameter Value Units Attenuation Range db Attenuation step db Insertion Loss (max) Attenuation Accuracy over 64 states ±.2 +1% of Att. setting max. ±.4 +3% of Att. setting max. Phase variation over 64 states deg RMS Error <.25 <.5 Input/Output VSWR :1 DC Bias Voltages - +5, V Control Voltage - / +5 V db db db Note: 1. Electrical specifications as measured on Wafer. Page 2 of 11
3 On Wafer data T A = 25 o C Insertion Loss -1-2 IL(dB) Normalised Attenuation 35 Attenuation (db) Page 3 of 11
4 On Wafer data T A = 25 o C 1.5 Attenuation Error 1. Attn error(db) Attenuation Error 1. Attn error(db) States Page 4 of 11
5 On Wafer data T A = 25 o C 5 Phase Error Phase error(deg) Phase Error Phase error(deg) States Page 5 of 11
6 On Wafer data T A = 25 o C Port 1 Return Loss -1 RL(dB) Port2 Return Loss -1 RL(dB) Page 6 of 11
7 On Wafer data T A = 25 o C 1. RMS Error RMS Error (db) Page 7 of 11
8 Truth Table State Attenuation TTL Control ( 1 = 3.5 to 5 V, = to.5 V ) (db) A6 (16) A5 (8) A4(4) A3 (2) A2(1) A1 (.5) Page 8 of 11
9 Truth Table State Attenuation TTL Control ( 1 = 3.5 to 5 V, = to.5 V ) (db) A6 (16) A5 (8) A4(4) A3 (2) A2(1) A1 (.5) Page 9 of 11
10 Mechanical Characteristics 1.91 [.75] 1.76 [.69] 1.61 [.63] V +5V RF RF.19 [.7].34 [.13].49 [.19] A1 A2 A3 A4 A5 A6 +5V V 1.4 [.41] 1.24 [.49] 1.44 [.57] 1.63 [.64] 1.84 [.72] 2.4 [.8] 2.66 [.15] 2.96 [.117] 4. [.158].33 [.13].48 [.19] 2.2 [.87] Units: millimeters (inches) Note: 1. All RF and DC bond pads are 1µm x 1µm 2. Pad no.1: RF port 1 3. Pad no.2: Optional V 4. Pad no.3: Optional +5V 5. Pad no.4: RF port 2 6. Pad no.5: V 7. Pad no.6: +5V 8. Pad nos.7-12: Control pads; Pad 7: MSB(16dB) & Pad 12: LSB (.5dB) Page 1 of 11
11 Recommended Assembly Diagram 5 Ohm Transmission Line 5 Ohm Transmission Line V +5V RF RF 1 mil gold wire 3 mil nominal gap A1 A2 A3 A4 A5 A6 +5V V DC Control Voltage +5V V Note: 1. Both the RF ports are DC coupled 2. No external components are required for this chip Die attach: For Epoxy attachment, use of a two-component conductive epoxy is recommended. An epoxy fillet should be visible around the total die periphery. If Eutectic attachment is preferred, use of fluxless AuSn (8/2) 1-2 mil thick preform solder is recommended. Use of AuGe preform should be strictly avoided. Wire bonding: For DC pad connections use either ball or wedge bonds. For best RF performance, use of 15-2µm length of wedge bonds is advised. Single Ball bonds of 25-3µm though acceptable, may cause a deviation in RF performance. GaAs MMIC devices are susceptible to Electrostatic discharge. Proper precautions should be observed during handling, assembly & testing All information and Specifications are subject to change without prior notice Page 11 of 11
GHz 6-Bit Digital Attenuator
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v1.16 SPDT SWITCH,.1 - GHz Typical Applications The HMC986A is ideal for: Wideband Switching Matrices High Speed Data Infrastructure Military Comms, RADAR, and ECM Test and Measurement Equipment Jamming
More informationFeatures. = +25 C, Vdd = 5V, Idd = 200 ma*
v3.13 HMC9 Typical Applications The HMC9 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Noise
More information33-47 GHz Wide Band Driver Amplifier TGA4522
33-47 GHz Wide Band Driver Amplifier Key Features Frequency Range: 33-47 GHz 27.5 dbm Nominal Psat @ 38GHz 27 dbm P1dB @ 38 GHz 36 dbm OTOI @ Pin = 19 dbm/tone 18 db Nominal Gain @ 38GHz db Nominal Return
More informationCMD GHz Active Frequency Doubler. Features. Functional Block Diagram. Description
Features Functional Block Diagram High output power Excellent Fo isolation Broadband performance Small die size Description The CMD214 die is a broadband MMIC GaAs x2 active frequency multiplier. When
More informationFeatures. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0.
1 Typical Applications This attenuator is ideal for use as a VVA for DC - 2 GHz applications: Point-to-Point Radio VSAT Radio Functional Diagram v4.18 ATTENUATOR, DC - 2 GHz Features Wide Bandwidth: DC
More informationKa-Band 2W Power Amplifier
Ka-Band 2W Power Amplifier Key Features 30-40 GHz Bandwidth > 33 dbm Nominal Psat @ Pin = 20dBm 18 db Nominal Gain Bias: 6 V, 50 ma Idq (1.9A under RF Drive) 0.15 um 3MI MMW phemt Technology Thermal Spreader
More informationPassive MMIC 26-40GHz Bandpass Filter
Page 1 The is a passive MMIC bandpass filter. It is a low loss integrated filter that passes the Ka (26-40GHz) band. Passive GaAs MMIC technology allows production of smaller filter constructions that
More informationFeatures OBSOLETE. = +25 C, 5 ma Bias Current
v3.34 Typical Applications The is suitable for: Wireless Local Loop LMDS & VSAT Point-to-Point Radios Test Equipment Functional Diagram Features Electrical Specifications, T A = +2 C, ma Bias Current Chip
More informationCustomised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel
Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised
More informationHMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features
Typical Applications Features This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Output IP: + dbm P1dB: +24 dbm Gain: 17 db Supply Voltage: +5V
More informationTGA GHz 2.5 Watt, 25dB Power Amplifier. Key Features and Performance. Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA
13-17 GHz 2.5 Watt, 25dB Power Amplifier Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA Key Features and Performance 34 dbm Midband Pout 25 db Nominal Gain 7 db Typical Input Return Loss
More informationHMC814. GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications. Functional Diagram. General Description
v.119 Typical Applications The is ideal for: Clock Generation Applications: SONET OC-19 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Sensors Functional Diagram Features
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