ENGAT00000 to ENGAT00010

Transcription

1 Wideband Fixed Attenuator Family, DIE, DC to 50 GHz ENGAT00000 / / / / / / / / / / Typical Applications ENGAT00000 to ENGAT00010 Features Space Hybrids Military Hybrids Microwave Radios Prototype Kits Test and Measurement Systems Description The ENGAT000XX are a line of fixed precision attenuators matched to 50 Ω. They have attenuation values of 0, 1, 2, 3, 4, 6, 8, and 10 db. They come in both PI and T style resistor configurations. The attenuators have gold backside metallization and are designed to be silver epoxy attached. Low inductance on-chip vias are utilized and no additional ground interconnects are required. The RF interconnects are designed to account for wire bonds and external microstrip s for optimal integrated return loss. Nichrome resistors with low temperature coefficients are set up to handle half watt RF input power levels. Ultra wideband performance Excellent return loss > 20 db typical Tight attenuation control RF Power handling: +27 dbm Die size: 0.76 x 0.76 x 0.10 mm (0.030 x x ) Functional Block Diagram T Style (AT00002, 00004, 00005, 00007, 00008, 00009) RF1 RF2 2 5 PI Style (AT00001, 00003, 00006, 00010) RF1 RF

2 Electrical Specifications, T = 25 ⁰C, Typical data Part Number Attenuator Value (db) Return loss (db) ENGAT00000 to ENGAT00010 DC to 35 GHz Attenuation tolerance (db) Return loss (db) 35 to 50 GHz Attenuation tolerance (db) AT (Thru line) / / AT ( PI ) / / -0.3 AT ( T ) / / -0.5 AT ( PI ) / / -0.5 AT ( T ) / / -0.5 AT ( T ) / / -0.6 AT ( PI ) / / -0.6 AT ( T ) / / -0.5 AT ( T ) / / -0.6 AT ( T ) / / -0.7 AT ( PI ) / / -0.7 Absolute Maximum Ratings Parameter Max level RF Power (assuming no DC power applied) Storage Temperature Operating Temperature Max DC Voltage applied to one port (assuming no RF power applied) +30 dbm except for: +28 dbm for AT00006, AT ⁰C to +150 ⁰C -55 ⁰C to +125 ⁰C +8 V except for: +5 V for AT00006, AT

3 RF Data with wirebonds and external microstrip pads Predicted Attenuation (db) AT00000 Attenuator Thru Line AT00001 Attenuator PI 1 db AT00002 Attenuator T 2 db AT00003 Attenuator PI 3 db AT00004 Attenuator T 4 db AT00005 Attenuator T 6 db Attenuation AT00006 Attenuator PI 6 db AT00007 Attenuator T 3 db AT00008 Attenuator T 8 db AT00009 Attenuator T 10 db AT00010 Attenuator PI 10 db Frequency (GHz) Predicted Return Loss (db) Return Loss 0 DB( ) AT00000 Attenuator Thru Line DB( ) AT00002 Attenuator T 2 db DB( ) AT00004 Attenuator T 4 db DB( ) AT00006 Attenuator PI 6 db DB( ) AT00008 Attenuator T 8 db DB( ) AT00010 Attenuator PI 10 db DB( ) AT00001 Attenuator PI 1 db DB( ) AT00003 Attenuator PI 3 db DB( ) AT00005 Attenuator T 6 db DB( ) AT00007 Attenuator T 3 db DB( ) AT00009 Attenuator T 10 db Frequency (GHz) 3

4 RF Data with wirebonds and external microstrip pads Predicted Insertion Phase (deg) Predicted S11 or S22 ( I/O reflection coefficients) to 40 GHz S11 or S Swp Max 40GHz AT00000 Attenuator Thru Line AT00004 Attenuator T 4 db AT00008 Attenuator T 8 db AT00001 Attenuator PI 1 db AT00002 Attenuator T 2 db AT00005 Attenuator T 6 db AT00006 Attenuator PI 6 db AT00009 Attenuator T 10 db AT00010 Attenuator PI 10 db -5.0 AT00003 Attenuator PI 3 db AT00007 Attenuator T 3 db Swp Min 0.05GHz 4

5 Outline Drawing 760 µm, 760 µm (0.030, ) 3 4 center of RF pads 2 5 Pads 2 & 5: RF I/O Pads 1, 3, 4, & 6: gnd 380 um (0.015 ) 1 6 See note 4 Part Number Attenuator Value (db) 0, 0 (0, 0) RF Bond Pad Dimensions RF Bond Pad Center Point Coordniates Length Width RF Pad 2 Pads 2 and 5 RF Pad 5 (x-dim, µm) (y-dim, µm) (x-dim, µm) (y-dim, µm) (x-dim, µm) AT (Thru line) AT ( PI ) AT ( T ) AT ( PI ) AT ( T ) AT ( T ) AT ( PI ) AT ( T ) AT ( T ) AT ( T ) AT ( PI ) Notes: 1. All dimensions are in µm (inches). Substrate thickness: 100 µm (0.004 ). 2. Backside metallization is gold. 3. Bond pad metallization is gold. 4. Dimension of RF in/out pad (port 2, 5) and location to edge of MMIC vary based on attenuator part number to optimize return loss performance. 5

6 External I/O Microstrip Flare Dimensions (on 5-mil Alumina) and I/O Bond Wire Inductances For Optimum Insertion and Return Loss Performance to 35 GHz A single external microstrip x and wire inductance can be used for attenuators AT00000, 1, 2, 3, 4, & 7; and a second dimension and wire inductance for attenuators AT00005, 6, 8, 9, & 10, to achieve best return loss performance through 35 GHz. RF I/O port - External Microstrip Flares on 5-mil Alumina Part Attenuator Flare Width Flare Length Wire Inductance Wire Length Number Value (db) (y, µm) (x, µm) (nh) (2 wires) (mils) AT (Thru line) AT ( PI ) AT ( T ) AT ( PI ) AT ( T ) AT ( T ) AT ( T ) AT ( PI ) AT ( T ) AT ( T ) AT ( PI ) Notes: 1. To achieve bond wire inductance noted, bond two redundant wires in parallel from each external to each associated MMIC RF bond pad as shown on sheet Gold Wire details: a) Diameter: 25.4 µm (1 mil) b) Spacing: 4 mils (~ 100 µm) typical c) Height above Ground: 8 mils (~ 200 µm) typical (wedge bonds) 3. Wire Length is total if the wire were made perfectly straight. 6

7 External I/O Microstrip Flare Dimensions (on 5-mil Alumina) and I/O Bond Wire Inductances Assembly Diagrams For Optimum Insertion and Return Loss Performance to 35 GHz for AT00000, 1, 2, 3, 4 & µm µm gap Two 1-mil diameter gold bond wires, 11 mils total each 120 µm wide 50 Ω line 95 µm for AT00005, 6, 8, 9, & µm gap Two 1-mil diameter gold bond wires, 13 mils total each 120 µm wide 50 Ω line 186 µm 200 µm 7

8 External I/O Microstrip Flare Dimensions (on 5-mil Alumina) and I/O Bond Wire Inductances For Optimum Insertion and Return Loss Performance to 50 GHz To achieve best return and insertion loss performance to 50 GHz, separate external microstrip dimensions and wire inductances are provided in the table below for each attenuator. RF I/O port - External Microstrip Flares on 5-mil Alumina Part Attenuator Flare Width Flare Length Wire Inductance Wire Length Number Value (db) (µm) (µm) (nh) (2 wires) (mils) AT (Thru line) AT ( PI ) AT ( T ) AT ( PI ) AT ( T ) AT ( T ) AT ( PI ) AT ( T ) AT ( T ) AT ( T ) AT ( PI ) Notes: 1. To achieve bond wire inductance noted, bond two redundant wires in parallel from each external to each associated MMIC RF bond pad as shown in examples on sheet Gold Wire details: a) Diameter: 25.4 µm (1 mil) b) Spacing: 4 mils (~ 100 µm) typical c) Height above Ground: 8 mils (~ 200 µm) typical (wedge bonds) 3. Wire Length is total if the wire were made perfectly straight. 8

9 Attenuator Bond Pads and External Microstrip Flares (on 5-mil Alumina) 50-ohm microstrip line on 5-mil alumina (120-µm wide line) microstrip on 5-mil alumina 9

10 Attenuator Bond Pads and External Microstrip Flares (on 5-mil Alumina) 50-ohm microstrip line on 5-mil alumina (120-µm wide line) microstrip on 5-mil alumina 10

11 Attenuator Bond Pads and External Microstrip Flares (on 5-mil Alumina) 50-ohm microstrip line on 5-mil alumina (120-µm wide line) microstrip on 5-mil alumina 11

12 Attenuator Bond Pads and External Microstrip Flares (on 5-mil Alumina) 50-ohm microstrip line on 5-mil alumina (120-µm wide line) microstrip on 5-mil alumina 12

13 Attenuator Bond Pads and External Microstrip Flares (on 5-mil Alumina) 50-ohm microstrip line on 5-mil alumina (120-µm wide line) microstrip on 5-mil alumina 13

14 Attenuator Bond Pads and External Microstrip Flares (on 5-mil Alumina) 50-ohm microstrip line on 5-mil alumina (120-µm wide line) microstrip on 5-mil alumina 14