MA02303GJ-R13. RF Power Amplifier IC for 2.4 GHz ISM. Features. Functional Schematic. PIN Configuration. Description. Ordering Information

Transcription

1 RF Power Amplifier C for 2.4 GHz SM Features Perfect for 82.11, HOP, SWAP, HOMERF, luetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency As High As Percent P 3 = +43 dm Output Power V Output Power 28. V Percent Duty Cycle 2 to 26 MHz Operation 8 Pin MSOP Full Downset Plastic Package Operates Over Wide Ranges of Supply Voltage Self-Aligned MSAG -Lite MESFET Process Functional Schematic PN 1 PN 8 Description The is an RF power amplifier based on M/A-COM s Self-Aligned MSAG MESFET Process. This product is designed for use in 2.4 GHz SM products. For booster applications, it features a low power bypass mode and output power control Ordering nformation Part Number -R7 -R13 -SM Description 7 inch, piece reel 13 inch, piece reel Sample test board PN Configuration PN Function Description 1 V D1 Drain voltage, first stage 2 RF N / V G1 RF input and drain voltage for first stage 3 GND Ground 4 V G2 Gate bias voltage, second stage V G3 Gate bias voltage, third stage 6 GND Ground 7 RF OUT / V D3 RF output and drain voltage for third stage 8 V D2 Drain voltage for second stage Package bottom is electrical and thermal ground Absolute Maximum Ratings 1 Rating Symbol Value Unit DC Supply Voltage V. V RF nput Power P N mw Junction Temperature T J 1 C Storage Temperature T STG -4 to +1 C Operating Temperature T OPER -4 to + C Moisture Sensitivity JEDEC Level 1 1. eyond these limits, the device may be damaged or device reliability reduced. Functional operation at absolute-maximum-rated conditions is not implied.

2 Electrical Specifications: V = +3.3 V, P N = -2 dm, Duty Cycle = %, T S = 37 C (Note 1), measured on evaluation board shown in Figure 11. Characteristic Symbol Min. Typ. Max. Unit Frequency Range ƒ 24 MHz Output Power, ƒ = 24 MHz dm Power Added Efficiency, ƒ = 24 MHz η 1 % Current, ƒ = 24 MHz 26 4 ma Current for linear operation, ƒ = 24 MHz, P N adjusted for =. dm +/-.2 dm Gain, ƒ = 24 MHz, P N adjusted for =. dm +/-.2 dm 4 ma G 29. d Harmonics, ƒ = 24 MHz 2ƒ, 3ƒ, 4 ƒ -4 dc nput VSWR, ƒ = 24 MHz 2.:1 Off solation (V = V) 4 d Thermal Resistance, junction to package bottom R TH C/W Third Order ntercept Point P 3 43 dm Load Mismatch (V =. V, VSWR = 8:1, P N = dm) No Degradation in Power Output Stability (P N = -2 to 2 dm, V = -. V, Load VSWR = :1, all phases) All non-harmonically related outputs more than 6 d below desired signal 1. T S is the temperature measured at the soldering point of the downset paddle on the bottom of the C. 2

3 Typical Characteristics (Measured data from process nominal devices) (dm), (%) 6 4 Output Power, Drain Current and Efficiency vs. nput Power - - P (dm) N V 1, 2, 3 = 3.3 V F = 24 MHz 2 1 (dm), (%) Output Power, and Drain Current vs. nput Power for Low Current ypass Mode (V 1,2 = 3.3 V, V 3 =. V) V 1, 2 = 3.3 V, V 3 =. V F = 24 MHz - - P (dm) N 2 1 Output Power, Drain Current and Efficiency vs. Supply Voltage Output Power, Drain Current and Efficiency vs. V 1 for Power Control (dm), (%) 4 P = -2 dm N F = 24 MHz..... (A) P OUT (dm) , P (dm) N V (V) 1 Output Power, nput Return Loss and Efficiency vs. Frequency Output Power and Drain Current vs. Temperature at V = +3. V (dm), (%) 4 P N = - 2 dm V = 3.3 V FREQUENCY (MHz) RL RL (d) (dm) 2 1 P = - 2 dm N V - 3. V F = 24 MHz - Temperature, T ( o C) S 3

4 Typical Characteristics (Cont d) (Measured data from process nominal devices) Output Power and Drain Current vs. Temperature at V = +3.2 V Output Power and Drain Current vs. Temperature at V = +3.6V (dm) 2 1 P = - 2 dm N V V F = 24 MHz - Temperature, T ( o C) S (dm) P = - 2 dm N V V F = 24 MHz - Temperature, T ( o C) S 2 1 Harmonics Maximum Operating Temperature (Ts) to Maintain <1 C Junction Temperature. 6 (dm) P N = -2d m ƒ = 24M Hz V D D = 3.3V ƒ 2ƒ 3ƒ 4ƒ P DSS (W) = * V Temperature T ( o C) S 4

5 Mechanical Data Figure 11 Component layout and printed circuit drawing for evaluation board (6 mil GETEK board). Application nformation +V C3 C2 T7 C4 3 T8 L2 RF N R1 1 8 RF OUT T1 T2 T3 2 7 T T6 C1 L1 3 6 C C6 T4 4 Full-Downset Paddle To oard Ground Figure 12 Evaluation oard Schematic List of Components Discrete Components C1 C4 = pf multilayer ceramic chip capacitor (Dielectric Labs C11AH1KTXL) C = 2. pf multilayer ceramic chip capacitor (Dielectric Labs C11AH2RTXL) C6 = 1.2 pf multilayer ceramic chip capacitor (Dielectric Labs C11AH1RTXL) R1 = Ω chip resistor (PECT-ND) L1 = 1.8 nh chip inductor (Toko TKS23CT-ND) L2 = 27 nh chip inductor (Coilcraft 8CS-27XK) Transmission Line Lengths* T1 =." T2 =.21" T3 =.11" (Not very critical) T4 =.16" T =.13" T6 =.16" T7 =.13" (Not very critical) T8 =.77" (Not very critical) T1, T2, T3, T, T6 are.77" wide T4, T7, and T8 are.26" wide *The board material is.6" FR-4 (distance is between RF and GND) with a dielectric constant of about 4.3 (standard FR-4)

6 Designing with the The is built using a near-enhancement mode FET that operates from a single supply voltage. A negative voltage is not required because the FET is designed to operate with a +V DC gate bias. There is no impedance matching or RF choking on this C these functions are supplied externally. This approach offers the highest level of performance, the lowest bill of materials cost, and far fewer components than a discrete design. To duplicate data sheet performance, your circuit board must recreate the same impedances developed on this evaluation board. The table below has one-port s-parameter measurements looking into the traces on the evaluation board. S-parameters of the are not supplied because the device is designed to operate under largesignal conditions. Frequency V 1 Pin 1 RF N/V GG1 Pin 2 V GG2 Pin 4 RF OUT/V 3 Pin 7 V 2 Pin 8 GHz Mag Ang Mag Ang Mag Ang Mag Ang Mag Ang

7 Designing with the (Cont d) Frequency V 1 Pin 1 RF N/V GG1 Pin 2 V GG2 Pin 4 RF OUT/V 3 Pin 7 V 2 Pin 8 GHz Mag Ang Mag Ang Mag Ang Mag Ang Mag Ang MSOP-8EP (Downset Lead) A2 PN 8 PN 1 D b e E1 A1 A E MAX Theta θ D1 L E2 EXPOSED PAD MSOP-8 Dim Measurement (mm) Measurement (inches) Min. Max. Min. Max. A A A b D D1 1.8 ref. 1.8 ref..73 ref..73 ref. E E E ref ref..68 ref..68 ref. e L Theta (θ) o 6 o o 6 o Note: All dimensions per JEDEC MO-187 Var. AA (issue ) except for D1, E2, and A1. See JEDEC or contact M/A-COM for additional dimensional and tolerance information. 7

8 This datasheet has been download from: Datasheets for electronics components.