PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY
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1 N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 3 W WITH 12 db NEW RF PLASTIC PACKAGE DESCRIPTION The PD54003 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003 boasts the excellent gain, linearity and reliability of ST s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD54003 s superior linearity performance makes it an ideal solution for portable radio. PowerSO-10RF (formed lead) ORDER CODE PD54003 BRANDING PD54003 The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE PD54003S PowerSO-10RF (straight lead) BRANDING PD54003S Mounting recommendations are available in (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage 25 V V GS Gate-Source Voltage ± 20 V I D Drain Current 4 A P DISS Power Dissipation (@ Tc = 70 C) 52.8 W Tj Max. Operating Junction Temperature 165 C T STG Storage Temperature -65 to +150 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 1.8 C/W July, /18
2 ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC (Per Section) Symbol Test Conditions Min. Typ. Max. Unit I DSS V GS = 0 V V DS = 25 V 1 µa I GSS V GS = 20 V V DS = 0 V 1 µa V GS(Q) V DS = 10 V I D = 50 ma V V DS(ON) V GS = 10 V I D = 1 A 1.3 V g FS V DS = 10 V I D = 3.2 A 1.7 mho C ISS V GS = 0 V V DS = 7.5 V f = 1 MHz 59 pf C OSS V GS = 0 V V DS = 7.5 V f = 1 MHz 43 pf C RSS V GS = 0 V V DS = 7.5 V f = 1 MHz 4.0 pf DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P OUT V DD = 7.5 V I DQ = 50 ma f = 3 W G PS V DD = 7.5 V I DQ = 50 ma P OUT = 3 W f = db η D V DD = 7.5 V I DQ = 50 ma P OUT = 3 W f = % Load mismatch V DD = 9.5 V I DQ = 50 ma P OUT = 3 W f = ALL PHASE ANGLES 20:1 VSWR PIN CONNECTION SOURCE D Z DL GATE DRAIN Typical Input Impedance Typical Drain Load Impedance G Zin S SC15200 SC13140 IMPEDANCE DATA PD54003 FREQ. MHz Z IN (Ω) Z DL (Ω) j j j j j j PD54003S FREQ. MHz Z IN (Ω) Z DL (Ω) j j j j j j /18
3 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage PD PD54003S f = 1 M Hz 3 C, CAPACITANCE (pf) Ciss Coss Crss Id, DRAIN CURRENT(A) 2 1 Vds = 10 V VDD, DRAIN VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) ID= 1.5 A 0.98 ID= 2A ID = 1 A 0.96 Vds= 10 V ID = 0.5 A 0.94 ID = 0.25 A Tc, CASE TEMPERATURE ( C) 3/18
4 TYPICAL PERFORMANCE Output Power vs. Input Power PD54003 Power Gain vs. Output Power Pg, POWER GAIN (db) Pin, INPUT POWER (W) Drain Efficiency vs. Output Power Return Loss vs. Output Power 80 0 Nd, DRAIN EFFICIENCY (%) Rtl, RETURN LOSS(dB) Output Power vs. Bias Current Drain Voltage vs. Bias Current Pin= 23.3 dbm Nd, DRAIN EFFICIENCY (%) Pin= 23.3 dbm IDQ, BIAS CURRENT (ma) IDQ, BIAS CURRENT (ma) 4/18
5 TYPICAL PERFORMANCE Output Power vs.supply Voltage Drain Efficiency vs. Supply Voltage PD PD54003S Pin= 23.3 dbm Nd, DRAIN EFFICIENCY (%) Pin= 23.3 dbm VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) Output Power vs. Gate-Source Voltage Pin= 23.3 dbm VGS, GATE-SOURCE VOLTAGE (V) 5/18
6 TYPICAL PERFORMANCE Output Power vs. Input Power PD54003S Power Gain vs. Output Power Pg, POWER GAIN (db) Pin, INPUT POWER (W) Drain Efficiency vs. Output Power Return Loss vs. Output Power Nd, EFFICIENCY (%) Rtl, RETURN LOSS (db) Output Power vs. Bias Current Drain Efficiency vs. Bias Current Pin= 22 dbm Nd, DRAIN EFFICIENCY(%) Pin= 22 dbm IDQ, BIAS CURRENT(mA) IDQ, BIAS CURRENT (ma) 6/18
7 TYPICAL PERFORMANCE Output Power vs. Supply Voltage Drain Efficiency vs. Supply Volatge PD PD54003S Pin= 22 dbm Nd, DRAIN EFFICIENCY (%) Pin= 22 dbm VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) Output Power vs. Gate-Source Voltage Pin= 22 dbm VGS, GATE-SOURCE VOLTAGE (V) 7/18
8 TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION B1,B2 SHORT FERRITE BEAD, FAIR RITE PRODUCTS ( ) C1,C pf, 100 mil CHIP CAPACITOR C2,C3,C4,C10,C11,C12 0 TO 20 pf TRIMMER CAPACITOR C5 130 pf, 100 mil CHIP CAPACITOR C6,C pf, 100 mil CHIP CAPACITOR C7,C14 10 µf, 50 V ELECTROLITIC CAPACITOR C8,C pf, 100 mil CHIP CAPACITOR C9,C F, 100 mil CHIP CAPACITOR L1 55,5 Nh, 5 TURN, COILCRAFT N1,N2 TYPE N FLANGE MOUNT R1 15 Ω, 0805 CHIP RESISTOR R2 1.0 KΩ, 1/8 W RESISTOR R3 15 Ω, 0805 CHIP RESISTOR R4 33 KΩ, 1/8 W RESISTOR Z X MICROSTRIP Z X MICROSTRIP Z X MICROSTRIP Z X MICROSTRIP Z X MICROSTRIP Z6,Z X MICROSTRIP Z X MICROSTRIP Z X MICROSTRIP Z X MICROSTRIP Z X MICROSTRIP BOARD ROGER, ULTRA LAM 2000 THK 0.030, εr = oz. ED cu 2 SIDES. 8/18
9 TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 4 inches 6.4 inches 9/18
10 COMMON SOURCE S-PARAMETER (PD54003) (V DS = 7.5V I DS = 50mA) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18
11 COMMON SOURCE S-PARAMETER (PD54003) (V DS = 7.5V I DS = 500mA) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18
12 COMMON SOURCE S-PARAMETER (PD54003) (V DS = 7.5V I DS = 1A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18
13 COMMON SOURCE S-PARAMETER (PD54003S) (V DS = 7.5V I DS = 50mA) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18
14 COMMON SOURCE S-PARAMETER (PD54003S) (V DS = 7.5V I DS = 500mA) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18
15 COMMON SOURCE S-PARAMETER (PD54003S) (V DS = 7.5V I DS = 1A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18
16 PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A A A A a b c D D E E E E F G L R R T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg T1 6 deg 6 deg T2 10 deg 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Stand-off (A1) - Overall width (L) 16/18
17 PowerSO-10RF Straight Lead MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A A A A a b c D D E E E E F G R R T1 6 deg 6 deg T2 10 deg 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 17/18
18 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 18/18
19 This datasheet has been download from: Datasheets for electronics components.
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