SD RF POWER TRANSISTORS The LdmoST FAMILY
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1 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 3 W WITH 13 db 945 MHz BeO FREE PACKAGE DESCRIPTION The SD573-1 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1. GHz. The SD573-1 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. ORDER CODE SD573-1 M25 epoxy sealed PIN CONNECTION 1 BRANDING TSD Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage 65 V V DGR Drain-Gate Voltage (R GS = 1 MΩ) 65 V V GS Gate-Source Voltage + 2 V I D Drain Current 4 A P DISS Power Dissipation (@ Tc = 7 C) 74 W Tj Max. Operating Junction Temperature 2 C T STG Storage Temperature -65 to + 2 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 1.75 C/W March, /7
2 ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC Symbol Test Conditions Min. Typ. Max. Unit V (BR)DSS V GS = V I DS = 1 ma 65 V I DSS V GS = V V DS = 28 V 1 µa I GSS V GS = 2 V V DS = V 1 µa V GS(Q) V DS = 28 V I D = 5 ma V V DS(ON) V GS = 1 V I D = 3 A 1.3 V G FS V DS = 1 V I D = 3 A 1.8 mho C ISS * V GS = V V DS = 28 V f = 1 MHz 58 pf C OSS V GS = V V DS = 28 V f = 1 MHz 34 pf C RSS V GS = V V DS = 28 V f = 1 MHz 2.7 pf DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P OUT V DD = 28 V I DQ = 5 ma f = 945 MHz 3 W G PS V DD = 28 V I DQ = 5 ma P OUT = 3 W f = 945 MHz db η D V DD = 28 V I DQ = 5 ma P OUT = 3 W f = 945 MHz 5 6 % Load mismatch V DD = 28 V I DQ = 5 ma P OUT = 28 W f = 945 MHz ALL PHASE ANGLES Ref B 1:1 VSWR 2/7
3 TYPICAL PERFORMANCE (CW) Output Power vs. Input Power SD573-1 Power Gain and Efficiency vs. Output Power Pout, OUTPUT POWER (W) f= 945 MHz Vdd= 28 V Idq= 5 ma Pin, INPUT POWER (W ) Gp, POWER GAIN (db) Gain 6 2 f= 945 MHz 3 Vdd= 28 V 1 Idq= 5 ma Pout, OUTPUT POWER (W) Eff Nd, DRAIN EFFICIENCY (%) Output Power vs. Gate Source Voltage Output Power vs. Supply Voltage Pout, OUTPUT POWER (W) f= 945 MHz Vdd= 28 V Idq= 5 ma Pout, OUTPUT POWER (W) f= 945 MHz Idq= 5 ma Pin=.84 W Pin=.47 W Pin=.24 W Vgs, GATE-SOURCE VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) 3/7
4 TEST CIRCUIT SCHEMATIC VG G VDD RF IN RF OUT NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE =.56 [1.42] +.2 [.5] -. [.] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION C19 2 µf / 63V ALLUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR C18, C14.1 µf / 5V SURFACE MOUNT CERAMIC CHIP CAPACITOR C17 1 pf ATC 1B SURFACE MOUNT CERAMIC CHIP CAPACITOR C16, C12, C11,C1 47 pf ATC 1B SURFACE MOUNT CERAMIC CHIP CAPACITOR C15 1 µf / 5V ALUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR C13 1 pf ATC 7B SURFACE MOUNT CERAMIC CHIP CAPACITOR C9, C pf GIGA TRIM VARIABLE CAPACITOR C8 6.2 pf ATC 1B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7, C6, C5,C4 1 pf ATC 1B SURFACE MOUNT CERAMIC CHIP CAPACITOR C3 3 pf ATC 1B SURFACE MOUNT CERAMIC CHIP CAPACITOR R3 12 -IM, 2W SURFACE MOUNT CERAMIC CHIP CAPACITOR R2 4.7 M OHM 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR R1 18 K OHM, 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR FB2, FB1 SHIELD BEAD SURFACE MOUNT EMI L2, L1 INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID=.59[1.49], NYLON COATED MAGNET WIRE PCB WOVEN FIBERGLASS REINFORCED PTFE.8 THK, εr=2.55, 2 Oz EDCu BOTH SIDE 4/7
5 TEST CIRCUIT SD573-1 TEST CIRCUIT PHOTOMASTER 4 inches SD inches 5/7
6 M25 (.23 x.36 2L N/HERM W/FLG) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A B C D E F G H I Controlling dimension: Inches B 6/7
7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 23 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 7/7
8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: SD573-1
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