PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY
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1 PD55 PD55S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = W with 17 db /.5V NEW RF PLASTIC PACKAGE DESCRIPTION The PD55 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at V in common source mode at frequencies up to 1 GHz. PD55 boasts the excellent gain, linearity and reliability of ST s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-RF. PD55 s superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-RF (formed lead) ORDER CODE PD55 BRANDING PD55 The PowerSO- plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE PD55S PowerSO-RF (straight lead) BRANDING PD55S Mounting recommendations are available in (look for application note AN9) ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage V V GS Gate-Source Voltage ± 2 V I D Drain Current A P DISS Power Dissipation (@ Tc = 7 C) 52. W Tj Max. Operating Junction Temperature 15 C T STG Storage Temperature -5 to +15 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 1. C/W March, /1
2 ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC Symbol Test Conditions Min. Typ. Max. Unit I DSS V GS = V V DS = 2 V 1 µa I GSS V GS = 2 V V DS = V 1 µa V GS(Q) V DS = V I D = 15 ma V V DS(ON) V GS = V I D = 1.5 A.7 V g FS V DS = V I D = 1.5 A 1. mho C ISS V GS = V V DS =.5 V f = 1 MHz 5 pf C OSS V GS = V V DS =.5 V f = 1 MHz 3 pf C RSS V GS = V V DS =.5 V f = 1 MHz 2. pf DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P OUT V DD =.5 V I DQ = 15 ma f = W G P V DD =.5 V I DQ = 15 ma P OUT = W f = db η D V DD =.5 V I DQ = 15 ma P OUT = W f = 5 55 % Load mismatch V DD = 15.5 V I DQ = 15 ma P OUT = W f = ALL PHASE ANGLES 2:1 VSWR PIN CONNECTION D SOURCE Z DL GATE DRAIN Typical Input Impedance G Zin Typical Drain Load Impedance SC152 SC131 S IMPEDANCE DATA PD55 FREQ. MHz Z IN (Ω) Z DL (Ω) j j j j j j j j j j 1.5 PD55S FREQ. MHz Z IN (Ω) Z DL (Ω) j j j j j j j j 1.9 2/1
3 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage PD55 - PD55S Drain Current vs. Gate-Source Voltage C, CAPACITANCES (pf) f=1 MHz Ciss Coss Crss Id, DRAIN CURRENT (A) Vds = V VDD, DRAIN VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V ) Gate-Source Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE(NORMALIZED) ID = 2A.9 ID = 1.5A ID = 1A.9 VDS = V ID.9 =.5A ID =.25A Tc, CASE TEMPERATURE ( C) 3/1
4 TYPICAL PERFORMANCE (PD55) Output Power vs. Input Power Power Gain vs. Output Power 1 2 IDQ = 15 ma Pin, INPUT POWER (W) Pg, POWER GAIN (db) IDQ = 15 ma 2 Drain Efficiency vs. Output Power Input Return Loss vs. Output Power Nd, DRAIN EFFICIENCY (%) IDQ = 15 ma 2 Rtl, INPUT RETURN LOSS (db) IDQ = 15 ma - 2 Output Power vs. Bias Current Drain Efficiency vs. Bias Current 2 Pin= 21.7 dbm IDQ, BIAS CURRENT (ma) Nd, DRAIN EFFICIENCY (%) Pin= 21.7 dbm IDQ, BIAS CURRENT (ma) /1
5 TYPICAL PERFORMANCE (PD55) Output Power vs. Supply Voltage Drain Efficiency vs. Supply Voltage PD55 - PD55S Idq= 15 ma Pin= 21.7 dbm VDD, SUPPLY VOLTAGE (V) Nd, DRAIN EFFICIENCY (%) Idq= 15 ma Pin= 21.7 dbm VDD, SUPPLY VOLTAGE (V) Output Power vs. Gate-Source Voltage Output Power vs. Input Power 2 Pin= 21.7 dbm VGS, GATE-SOURCE VOLTAGE (V) Output Power (W) MHz 5 MHz 9 MHz 2 Vdd =.5V Idq = 25mA Input Power (W) Drain Efficiency vs. Output Power Input Return Loss vs. Output Power Drain efficiency (%) MHz MHz 9 MHz Vdd =.5V Idq = 25mA Output Power (W) Input Return Loss (db) MHz 9 MHz 5 MHz -25 Vdd =.5V Idq = 25mA Output Power (W) 5/1
6 TYPICAL PERFORMANCE (PD55S) Output Power vs. Input Power Power Gain vs. Output Power 1 2 IDQ= 15 ma Pin, INPUT POWER (W) Pg, POWER GAIN (db) IDQ= 15 ma 2 Drain Efficiency vs. Output Power Input Return Loss vs. Output Power Nd, DRAIN EFFICIENCY (%) IDQ= 15 ma 2 Rtl, INPUT RETURN LOSS (db) IDQ= 15 ma - 2 Output Power vs. Bias Current Drain Efficiency vs. Bias Current 2 Pin= 21 dbm IDQ, BIAS CURRENT (ma) Nd, DRAIN EFFICIENCY (%) Pin= 21 dbm IDQ, BIAS CURRENT (ma) /1
7 TYPICAL PERFORMANCE (PD55S) Output Power vs. Supply Voltage Drain Efficiency vs. Supply Voltage PD55 - PD55S Idq= 15 ma Pin= 21 dbm VDD, SUPPLY VOLTAGE (V) Nd, DRAIN EFFICIENCY (%) Idq= 15 ma Pin= 21 dbm VDD, SUPPLY VOLTAGE (V) Output Power vs. Gate-Source Voltage 2 Pin= 21 dbm VGS, GATE-SOURCE VOLTAGE (V) 7/1
8 TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1, B2 SHORT FERRITE BEAD, FAIR RITE PRODUCTS (27321) R3 Ω, 5 CHIP RESISTOR C1, C 2 pf, mil CHIP CAPACITOR R 33 kω, 1/ Ω RESISTOR C2,C3,C,C11 TO 2 pf, TRIMMER CAPACITOR Z1.51 X. MICROSTRIP C 2 pf, mil CHIP CAPACITOR Z2 1.5 X. MICROSTRIP C5,C1 pf, mil CHIP CAPACITOR Z3.2 X. MICROSTRIP C,C13 µf, 5 V ELECTROLYTIC CAPACITOR Z.155 X. MICROSTRIP C7, C1 1.2 pf, mil CHIP CAPACITOR Z5,Z.2 X.233 MICROSTRIP C,C15.1 F, mil CHIP CAPACITOR Z7.5 X. MICROSTRIP C9 3 pf, mil CHIP CAPACITOR Z.2 X. MICROSTRIP L nh, TURN, COILCRAFT Z X. MICROSTRIP N1, N2 TYPE N FLANGE MOUNT Z.33 X. MICROSTRIP R1 15 Ω, 5 CHIP RESISTOR BOARD R2 51 Ω, 1/2 W RESISTOR ROGER ULTRA LAM 2 THK.3 ε r = oz ED Cu BOTH SIDES /1
9 TEST CIRCUIT PHOTOMASTER inches. inches TEST CIRCUIT 9/1
10 COMMON SOURCE S-PARAMETER (PD55) (V DS =.5V I DS = 15mA) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS I S Φ IS 22 I S 22 Φ (MHz) /1
11 COMMON SOURCE S-PARAMETER (PD55) (V DS =.5V I DS = ma) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS I S Φ IS 22 I S 22 Φ (MHz) /1
12 COMMON SOURCE S-PARAMETER (PD55) (V DS =.5V I DS = 1.5A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS I S Φ IS 22 I S 22 Φ (MHz) /1
13 COMMON SOURCE S-PARAMETER (PD55S) (V DS =.5V I DS = 15mA) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS I S Φ IS 22 I S 22 Φ (MHz) /1
14 COMMON SOURCE S-PARAMETER (PD55S) (V DS =.5V I DS = ma) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS I S Φ IS 22 I S 22 Φ (MHz) /1
15 COMMON SOURCE S-PARAMETER (PD55S) (V DS =.5V I DS = 1.5A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS I S Φ IS 22 I S 22 Φ (MHz) /1
16 PowerSO-RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A A A A a.2.7 b c D D E E E E F.5.19 G L R R2..31 T 2 deg 5 deg deg 2 deg 5 deg deg T1 deg deg T2 deg deg Note (1): Resin protrusions not included (max value:.15 mm per side) CRITICAL DIMENSIONS: - Stand-off (A1) - Overall width (L) 1/1
17 PowerSO-RF Straight Lead MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A A A A a.2.7 b c D D E E E E F.5.19 G R R2..31 T1 deg deg T2 deg deg Note (1): Resin protrusions not included (max value:.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 17/1
18 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 23 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 1/1
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