DB RF power amplifier using PD85025-E for UHF OFDM radio. Features. Description

Transcription

1 RF power amplifier using PD85025-E for UHF OFDM radio Features Excellent thermal stability Frequency: MHz Supply voltage: 15 V Output power: 10 WPEP Gain: 19 ± 1 db Efficiency: 45 % - 52 % Load mismatch: 20:1 BeO free amplifier Description The is an evaluation board using PD85025-E LDMOS transistor and designed for UHF OFDM and 2-way mobile radio. Mechanical specification: L = 60 mm, W = 30 mm For additional informations on PD85025-E please refer to its datasheet. Table 1. Device summary Order code May 2008 Rev 1 1/

2 Contents Contents 1 Electrical data Maximum ratings Electrical characteristics Typical impedances Typical performance Test circuit Circuit layout Mounting indications - PD85025-E Package mechanical data - PD85025-E Revision history /16

3 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DD Supply voltage 20 V I D Drain current 3.0 A T CASE Operating case temperature -20 to +85 C T A Max. ambient temperature +55 C 2 Electrical characteristics T A = +25 o C, V DD = 15 V, I dq = 220 ma Table 3. Electrical specification Symbol Test conditions Min Typ Max Unit Freq Frequency range MHz P OUT 10 W P IN = 21 dbm 19 ± 1 db P IN = 21 dbm % H2 2 nd P IN = 21 dbm -37 / - 60 db H3 3 rd P IN = 21 dbm -60 / -68 db VSWR Load mismatch all P IN = 10 W 20:1 3/16

4 Typical impedances 3 Typical impedances Figure 1. Typical impedances Table 4. Typical impedances F (MHz) Z GS Z DL j j j j j j j j j5 5.1+j j j j j j j j j j j j j j j4.7 4/16

5 Typical performance 4 Typical performance Figure 2. Gain vs output CW Vdd = 15 V, Idq = 220 ma Figure 3. Efficiency vs output CW Vdd = 15 V, Id = 220 ma Figure 4. Drain current vs output CW Vdd = 15 V, Id = 220 ma Figure 5. Gain and drain current vs CW Vdd = 15 V, Id = 220 ma, Pin=21 dbm 5/16

6 Typical performance Figure 6. Input return loss vs CW Vdd = 15 V, Id = 220 ma, Pin=18 dbm Figure 7. Harmonics vs CW Vdd = 15 V, Id = 220 ma, Pout = 37 dbm Figure 8. IMD3 vs Idq and DF = 600 khz, Vdd = 15 V, Pout = 10 WPEP Figure 9. IMD5 vs Idq and DF = 600 khz, Vdd = 15 V, Pout = 10WPEP 6/16

7 Typical performance Figure 10. IMD3 vs output DF = 600 khz, Vdd = 15 V, Idq = 170 ma Figure 11. IMD3 vs output DF = 600 khz, Vdd = 15 V, Idq = 220 ma 7/16

8 Test circuit 5 Test circuit Figure 12. Test circuit schematic MSub MSUB FR4_60 H=1.52 mm C1 D1 R2 R1 B1 C2 B2 C3 C4 C5 Vcc_2P R3 C14 C15 R5 L1 L3 L6 L7 C12 P1 C6 L2 L4 L5 C16 C7 C8 C13 R6 R4 C11 C9 C10 C17 P2 LDMOS Model=PD85025-E 8/16

9 Circuit layout 6 Circuit layout Figure 13. Circuit layout Table 5. Component part list Component ID Description Value Case size Manufacturer Part code B1 Ferrite bead Panasonic EXCELDRC35C B2 Ferrite bead Panasonic EXCELDRC35C C1, C2 Capacitor 120 pf 1206 Murata GRM42-6 COG 121J 50_ C3 Capacitor 1 nf 1206 Murata GRM42-6 COG 102J 50 C4 Capacitor 100 nf 1206 Murata GRM42-6_X7R 104K 50_ C5 Capacitor 10 uf SMT Panasonic EEVHB1V100P C6,C12 Capacitor 180 pf 100B ATC ATC 100B 181JW C7 Capacitor 22 pf 100B ATC ATC 100B 220JW C8 Capacitor 47 pf 100B ATC ATC 100B 470JW C9 Capacitor 36 pf 100B ATC ATC 100B 360JW C10 Capacitor 22 pf 100B ATC ATC 100B 220JW C11 Capacitor 47 pf 100B ATC ATC 100B 470 JW C16 Capacitor 6.8 pf 100B ATC ATC 100B 6R8BW C13 Capacitor 51 pf 100B ATC ATC 100B 510JW C14 Capacitor 10 uf Murata GRM32NF51E106ZA01B C15 Capacitor 330 nf 1206 Murata GRM42-6_X7R 334K 50_ C17 Capacitor 9.1 pf 100B ATC ATC 100B 9R1JW D1 Zener diode 5.1 V SOD110 Philips BZX284C5V1 L1 Inductor 22 nh Coilcraft B07TJLB 9/16

10 Circuit layout Table 5. Component part list (continued) Component ID Description Value Case size Manufacturer Part code L2,L7 Inductor 12.5 nh Coilcraft A04TJLB L3,L5 Inductor 2,5 nh Coilcraft A01TKLB L4,L6 Inductor 5 nh Coilcraft A02TJLB R1 Resistor 1 KΩ 1206 Tyco electronics R2 Potentiometer 10 KΩ Bourns electronics 3214W-1-103E R3 Resistor 16 Ω 1206 Bourns electronics R7 Resistor 0 Ω 1206 Bourns electronics R4,R5,R6 Resistor 2.2 Ω 603 VISHAY/Metal_Layer D11/CRCW0603 Vcc_2P Connector DC 2 poli 2.54mm Phoenix contact P1_P2 RF Connector SMA_Female Flange solder 1.54 mm Q LDMOS PD85025-E STMicroelectronics PD85025-E Board FR-4 THk=0.060" 2OZ Cu both sides 10/16

11 Mounting indications - PD85025-E 7 Mounting indications - PD85025-E Figure 14. PowerSO-10 mounting indications Figure 15. Recommended heat profile / reflow soldering Epoxy FR4 board Metal-backed board 11/16

12 Package mechanical data - PD85025-E 8 Package mechanical data - PD85025-E In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 12/16

13 Package mechanical data - PD85025-E Table 6. PowerSO-10RF formed lead (gull wing) mechanical data Dim. mm. Inch Min Typ Max Min Typ Max A A A A a b c D D E E E E F G L R R T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg T1 6 deg 6 deg T2 10 deg 10 deg Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 16. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 13/16

14 Package mechanical data - PD85025-E Figure 17. PowerSO-10RF tape and reel 14/16

15 Revision history 9 Revision history Table 7. Document revision history Date Revision Changes 12-May Initial release 15/16

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