1500 Watt Low Clamping Factor Transient Voltage Suppressor

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Darcy Gaines
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1 1N6358 1N637 or Available 1500 Watt Low Clamping Factor Transient Voltage Suppressor DESCRIPTION This Transient Voltage Suppressor (TVS) series for 1N6358 through 1N637 are JEDEC registered selections for both unidirectional and bidirectional devices. The 1N6358 through 1N6364 are unidirectional and the 1N6366 through 1N637 are bidirectional where they all provide a very low specified clamping factor for minimal clamping voltages ( ) above their respective breakdown voltages (V BR ) as specified herein. They are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of IEC They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC and IEC Important: For the latest information, visit our website FEATURES Unidirectional and bidirectional TVS series in axial package for thru-hole mounting. Suppresses transients up to /1000 µs (see figure 1). t clamping (0 volts to V (BR) min): Unidirectional Less than 100 picoseconds. Bidirectional Less than 5 nanoseconds. Working voltage (V WM) range 10 V to 45 V. Low clamping factor (ratio of actual /V BR): full rated power and 50% rated power. Hermetically sealed DO-13 metal package. Upscreening in reference to MIL-PRF is available. RoHS compliant versions available. Screening in reference to MIL-PRF available DO-13 (DO-0AA) Package APPLICATIONS / BENEFITS Designed to protect bipolar and MOS microprocessor based systems Protection from switching transients and induced RF. Protection from ESD & EFT per IEC and IEC Secondary lightning protection per IEC with 4 ohms source impedance: Class 1, & 3: 1N6358 to 1N637 Class 4: 1N6358 to 1N636 and 1N6366 to 1N6370 Secondary lightning protection per IEC with 1 ohms source impedance: Class 1 & : 1N6358 to 1N637 Class 3: 1N6358 to 1N636 and 1N6366 to 1N6370 Class 4: 1N6358 and 1N6366 Secondary lightning protection per IEC with ohms source impedance: Class : 1N6358 to 1N6361 and 1N6366 to 1N6369 Class 3: 1N6358 and 1N6366 Inherently radiation hard as described in Microsemi MicroNote 050. RATINGS Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T J and T STG -65 to +175 ºC Thermal Resistance, Junction to inch (10 R ӨJL 50 ºC/W mm) from body Thermal Resistance, Junction to Ambient (1) R ӨJA 110 ºC/W Peak Pulse T L = +5 ºC () P PP 1500 W Rated Average Power T L +15 ºC (3) P M(AV) 1 W Solder 10 s T SP 60 o C Notes: 1. When mounted on FR4 PC board with 4 mm copper pads (1 oz) and track width 1 mm, length 5 mm.. At 10/1000 µs with repetition rate of 0.01% or less (see figures 1,, & 4). 3. At 3/8 inch (10 mm) from body (see derating in figure 5). TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (V WM) except for transients that briefly drive the device into avalanche breakdown (V BR to region). MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-09, Rev. 1 (11800) 013 Microsemi Corporation Page 1 of 7

2 1N6358 1N637 or MECHANICAL and PACKAGING CASE: DO-13 (DO-0AA), welded, hermetically sealed metal and glass. TERMINALS: All external metal surfaces are tin-lead plated or RoHS compliant annealed matte-tin plating solderable per MIL- STD-750 method 06. MARKING: Part number and polarity diode symbol. POLARITY: Cathode connected to case and polarity indicated by diode symbol. TAPE & REEL option: Standard per EIA-96 (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 1.4 grams. See package dimensions on last page. PART NOMENCLATURE MQ 1N6358 (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) CDS (reference JANS) Blank = Commercial RoHS Compliance e3 = RoHS compliant Blank = non-rohs compliant JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition V WM Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. V (BR) Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 5 o C. Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the series resistance and thermal rise and positive temperature coefficient (α V(BR)). I PP Peak Pulse Current: The peak current during the impulse. (See figure ) P PP Peak Pulse Power: The pulse power as determined by the product of and I PP. Standby Current: The current at the standoff voltage (V WM). I D T4-LDS-09, Rev. 1 (11800) 013 Microsemi Corporation Page of 7

3 1N6358 1N637 or ELECTRICAL 5 o C (Both Polarities) Unidirectional STANDOFF (NOTE 1) V WM REVERSE WM I D MINIMUM* 1.0 ma V (BR) (min) MICROSEMI PART NUMBER µa 1N6358 MPT N6359 MPT N6360 MPT N6361 MPT N636 MPT N6363 MPT N6364 MPT V F at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave. (Fig. ) I PP1 = 1A (Fig. I PP = 10A PEAK PULSE CURRENT I PP3 A Bidirectional STANDOFF (NOTE 1) V WM MICROSEMI PART NUMBER 1N6366 MPT-10C N6367 MPT-1C 1.0 1N6368 MPT-15C N6369 MPT-18C N6370 MPT-C.0 1N6371 MPT-36C N637 MPT-45C 45.0 C suffix indicates bidirectional REVERSE WM I D µa MINIMUM* 1.0 ma V (BR) (min) (Fig. ) I PP1 = 1A (Fig. I PP = 10A PEAK PULSE CURRENT I PP3 A NOTE 1: TVS devices are normally selected according to the reverse standoff voltage (V WM) which should be equal to or greater than the DC or continuous peak operating voltage level. * The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated power supply voltages are employed. T4-LDS-09, Rev. 1 (11800) 013 Microsemi Corporation Page 3 of 7

4 1N6358 1N637 or GRAPHS t p Pulse Time FIGURE 1 Peak Pulse Power vs Pulse Time Vc Clamping Voltage - Ppp - Peak Pulse Power - kw I PP Peak Pulse Current Amps FIGURE Typical Characteristic Clamping Voltage vs. Peak Pulse Current T4-LDS-09, Rev. 1 (11800) 013 Microsemi Corporation Page 4 of 7

5 1N6358 1N637 or GRAPHS Time (t) in milliseconds FIGURE 3 Pulse Wave Form for Exponential Surge C Capacitance picofarads Pulse Current (IP) in Percent of IPP V (BR) Breakdown Voltage FIGURE 4 Typical Capacitance vs. Breakdown Voltage (Unidirectional Types) T4-LDS-09, Rev. 1 (11800) 013 Microsemi Corporation Page 5 of 7

6 1N6358 1N637 or GRAPHS V (BR) Breakdown Voltage FIGURE 5 Typical Capacitance vs. Breakdown Voltage (Bidirectional Types) Steady-State and Peak Pulse Power Dissipation (watts) C Capacitance picofarads T L Lead Temperature C FIGURE 6 Steady-State and Peak Pulse Power Derating Curve T4-LDS-09, Rev. 1 (11800) 013 Microsemi Corporation Page 6 of 7

7 1N6358 1N637 or PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches.. Millimeter equivalents are given for general information only. 3. The major diameter is essentially constant along its length. 4. Within this zone, diameter may vary to allow for lead finishes and irregularities. 5. Dimension to allow for pinch or seal deformation anywhere along tubulation. 6. Polarity symbol for transient suppressor. 7. Lead 1 shall be electrically connected to the case. 8. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Dimensions Symbol Inches Millimeters Notes Min Max Min Max BD BL BLT CD LD LL LU T4-LDS-09, Rev. 1 (11800) 013 Microsemi Corporation Page 7 of 7

Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified per MIL-PRF-19500/551

Available on commercial versions Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified per MIL-PRF-19500/551 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series