Comchip 3KP-G Transient Voltage Suppressor Datasheet
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1 Comchip 3KP-G Transient Suppressor Datasheet Features -Glass passivated chip. -Low leakage. -Uni and Bidirection unit. -Excellent clamping capability. -Very Fast response time. ManualLib.com collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products.
2 3KP-G Series Stand-off :. ~ 44V Power Dissipation: 3 Watts RoHS Device Features R-6 -Glass passivated chip. -Low leakage. -Uni and Bidirection unit. -Excellent clamping capability. -Very Fast response time. 1.(.4) MIN..(1.3).48(1.) DI. Mechanical Data -Case: Molded plastic R-6 -Epoxy: UL 94V- rate flame retardant. -Lead: Solderable per MIL-STD-, method 8 guranteed. -Polarity: Color band denotes cathode end except Bipolar. -Weight:.1 grams.36(9.14).34(8.64) 1.(.4) MIN..36(9.14).34(8.64) Dimensions in inches and (millimeter) DI. Ratings and Electrical Characteristics Rating at C ambient temperature unless otherwise specified. Single phase, half wave, 6Hz, resistive or inductive loaded. For capacitive load, derated current by %. Symbol Parameter Value Unit Peak power dissipation with a 1/ μs waveform (Note 1) PPP 3 W Peak pulse current wih a 1/ μs waveform (Note 1) IPP See Next Table Power dissipation on infinite heatsink at TL=7 C PD 6. W Peak forward surge current, 8.3mS single half sine-wave unidirectional only (Note ) IFSM 3 instantaneous forward voltage at for unidirectional only (Note 3) VF 3. /. V Operating junction and storage temperature range TJ, TSTG - to +1 C NTOES: (1) Non-repetitive current pulse, per fig.3 and derated above T= C per Fig. 1. () Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. (3) VF<3.V for devices of VBR<V and VF<.V for devices of VBR>1V. QW-BTV9 Page 1
3 RTING ND CHRCTERISTIC (3KP-G Series) Fig.1 Pulse Derating Curve Fig. Max. Non-repetitive Surge Current Peak Pulse Derating in % of Peak Power or Current 7 Peak Forward Surge Current, () ms single half sine-wave TJ = TJ max mbient Temperature, ( C) 1 1 Number of Cycles at 6Hz Fig.3 Peak Pulse Power Rating Curve Fig.4 Steady State Power Derating Curve Peak Power, (kw) Pulse Width, td (μs) Lead Temperature, TL ( C) Steady State Power Dissipation, (W) Fig. Pulse Waveforem Peak Pulse Current, (%) td Tr=1μs Peak value Half value= IPP TJ = C Pluse width(td)is defined as the point where the peak current decays to % of IPP 1/ waveform as defined by R.E Time, (ms) QW-BTV9 Page
4 Electrical Characteristics (T= C unless otherwise noted) Part No. MIN.(V) Breakdown VBR IT MX.(V) IT(m) Leakage at VRWM IR (u) Working Peak VRWM (V) Surge Current IPP() Clamping at IPP Vc(V) UNI Marking Code BI 3KP.(C)-G KP. 3KP.C 3KP6.(C)-G KP6. 3KP6.C 3KP6.(C)-G KP6. 3KP6.C 3KP7.(C)-G KP7. 3KP7.C 3KP7.(C)-G KP7. 3KP7.C 3KP8.(C)-G KP8. 3KP8.C 3KP8.(C)-G KP8. 3KP8.C 3KP9.(C)-G KP9. 3KP9.C 3KP1(C)-G KP1 3KP1C 3KP11(C)-G KP11 3KP11C 3KP1(C)-G KP1 3KP1C 3KP13(C)-G KP13 3KP13C 3KP14(C)-G KP14 3KP14C 3KP1(C)-G KP1 3KP1C 3KP16(C)-G KP16 3KP16C 3KP17(C)-G KP17 3KP17C 3KP18(C)-G KP18 3KP18C 3KP19(C)-G KP19 3KP19C 3KP(C)-G KP 3KPC 3KP(C)-G KP 3KPC 3KP4(C)-G KP4 3KP4C 3KP6(C)-G KP6 3KP6C 3KP8(C)-G KP8 3KP8C 3KP3(C)-G KP3 3KP3C 3KP33(C)-G KP36(C)-G KP4(C)-G KP43(C)-G KP4(C)-G KP48(C)-G KP1(C)-G KP4(C)-G KP33 3KP36 3KP4 3KP43 3KP4 3KP48 3KP1 3KP4 3KP33C 3KP36C 3KP4C 3KP43C 3KP4C 3KP48C 3KP1C 3KP4C QW-BTV9 Page 3
5 Electrical Characteristics (T= C unless otherwise noted) Part No. MIN.(V) Breakdown VBR IT MX.(V) IT(m) Leakage at VRWM IR (u) Working Peak VRWM (V) Surge Current IPP() Clamping at IPP Vc(V) UNI Marking Code BI 3KP8(C)-G 3KP6(C)-G 3KP64(C)-G 3KP7(C)-G 3KP7(C)-G 3KP78(C)-G 3KP8(C)-G 3KP8(C)-G 3KP9(C)-G 3KP(C)-G 3KP11(C)-G KP1(C)-G 3KP13(C)-G 3KP14(C)-G 3KP1(C)-G KP16(C)-G 3KP17(C)-G 3KP18(C)-G 3KP19(C)-G KP(C)-G KP1(C)-G KP(C)-G KP(C)-G KP3(C)-G KP3(C)-G KP4(C)-G KP44(C)-G KP8 3KP6 3KP64 3KP7 3KP7 3KP78 3KP8 3KP8 3KP9 3KP 3KP11 3KP1 3KP13 3KP14 3KP1 3KP16 3KP17 3KP18 3KP19 3KP 3KP1 3KP 3KP 3KP3 3KP3 3KP4 3KP44 3KP8C 3KP6C 3KP64C 3KP7C 3KP7C 3KP78C 3KP8C 3KP8C 3KP9C 3KPC 3KP11C 3KP1C 3KP13C 3KP14C 3KP1C 3KP16C 3KP17C 3KP18C 3KP19C 3KPC 3KP1C 3KPC 3KPC 3KP3C 3KP3C 3KP4C 3KP44C NOTES: 1. Suffix ' ' denotes % tolerance device.. dd suffix 'C 'or ' C ' after part number to specify Bi-directional devices. 3. For Bi-Directional devices having VR of 1 volts and under, the IR limit is double. QW-BTV9 Page 4
6 Taping Specification For xial Lead Diodes E Z 9 ± Do L1 L B W E T D1 L D H W SYMBOL B Z T E L1 L R-6 (mm) 1. ±.. ±. 1. (max) 6. ±.4 1. (max) 1. (max) 1. (max) (inch).394 ±..47 ±..47 (max).36 ± (max).39 (max).39 (max) SYMBOL D1 D D W L W H R-6 (mm) 8.7 ± ± ± (inch) ±.1.64 ± ± Standard Packaging Case Type BOX ( pcs ) MMO PCK CRTON ( pcs ) R-6 3,7 QW-BTV9 Page
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More informationChina - Germany - Korea - Singapore - United States - smc-diodes.com
Technical Data Features: Glass Passivated Die Construction 5000W Peak Pulse Power Dissipation Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Case Material
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