TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
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1 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 1. Ampere FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability DO 41 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V rate flame retardant * Lead: MIL STD 22E, Method 28 guaranteed * Polarity: Color band denotes cathode end * Mounting position: Any * Weight:.33 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 6 Hz, resistive or inductive load. For capacitive load, derate current by 2%. Dimensions in inches and (millimeters) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 75 o C Peak Forward Surge Current 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) IFSM 3 Maximum Instantaneous Forward Voltage at 1.A DC VF 1.1 Maximum DC Reverse = 25 o C 5. u at Rated DC Blocking = 1 o C 5 IR Maximum Full Load Reverse Current Average, Full Cycle 3 u.375*(9.5mm) lead length at T L = 75 o C NOTES : Measured at 1 MHZ and applied reverse voltage of 4. volts SYMBOL VRRM VRMS VDC IO 1N41 1N42 1N43 1N44 1N45 1N46 1N Typical Junction Capacitance (Note) CJ 15 pf Typical Thermal Resistance R q J A 5 C/ W Operating and Storage Temperature Range TJ, TSTG 65 to C UNITS
2 RATING AND CHARACTERISTIC CURVES (1N41 THRU 1N47)
3 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 3. Ampere FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability DO 27 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V rated flame retardant * Lead: MIL STD 22E, Method 28 guaranteed * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 1.18 gram approx..375 (9.5).335 (8.5) 1. (25.4) MIN..52 (1.3).48 (1.2) DIA..22 (5.6).197 (5.) DIA. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 6 Hz, resistive or inductive load. For capacitive load, derate current by 2%. 1. (25.4) MIN. Dimensions in inches and (millimeters) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 75 o C Peak Forward Surge Current 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) IFSM 2 Maximum Instantaneous Forward Voltage at 3.A DC VF 1.1 Maximum DC Reverse TA=25 o C 5. at Rated DC Blocking TA=1 o C 5 IR Maximum Full Load Reverse Current Average, Full Cycle 3.375"(9.5mm) lead length at T L = 55 o C Operating and Storage Temperature Range SYMBOL 1N54 1N541 1N542 1N544 1N546 1N547 1N Typical Thermal Resistance R q J A 3 VRRM VRMS VDC IO Typical Junction Capacitance (Note) CJ 4 pf Note: Measured at 1 MHz and applied reverse voltage of 4. volts TJ, TSTG to +175 UNITS m C/ W C REV 2, Oct/2/213
4 AVERAGE FORWARD CURRENT, (A) FIG. 1 TYPICAL FORWARD CURRENT Single Phase Half Wave 6Hz Resistive or Inductive Load DERATING CURVE AMBIENT TEMPERATURE, ( O C) PEAK FORWARD SURGE CURRENT, (A) FIG. 2 MAXIMUM NON REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave (JEDEC Method) NUMBER OF CYCLES AT 6Hz INSTANTANEOUS FORWARD CURRENT, (A) FIG. 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS TJ=25 O C Pulse Width=3ms 1% Duty Cycle INSTANTANEOUS REVERSE CURRENT, (A) FIG. 4 TYPICAL REVERSE CHARACTERISTICS TJ=25 O C INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 TYPICAL JUNCTION CAPACITANCE 2 JUNCTION CAPACITANCE, (pf) TJ=25 O C REVERSE VOLTAGE, (V)
5 Hermetically sealed leaded glass SOD27 (DO 35) package High switching speed: max. 4 ns General application Continuous reverse voltage: max. 1 V Repetitive peak reverse voltage: max. 1 V Repetitive peak forward current: max. 45 ma. handbook, halfpage k The diodes are type branded. a MAM246 High speed switching. Fig.1 Simplified outline (SOD27; DO 35) and symbol. The 1N4148 and 1N4448 are high speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO 35) packages. 1N4148 1N4148PH or 4148PH 1N4448 1N4448 1N hermetically sealed glass package; axial leaded; 2 leads SOD27 1N4448
6 High speed diodes 1N4148; 1N4448 In accordance with the Absolute Maximum Rating System (IEC 6134). V RRM repetitive peak reverse voltage - 1 V V R continuous reverse voltage - 1 V I F continuous forward current see Fig.2; note 1-2 ma I FRM repetitive peak forward current - 45 ma I FSM non repetitive peak forward current square wave; T j = 25 C prior to surge; see Fig.4 t = 1 ms - 4 A t = 1 ms - 1 A t = 1 s -.5 A P tot total power dissipation T amb = 25 C; note 1-5 mw T stg storage temperature C T j junction temperature - 2 C 1. Device mounted on an FR4 printed circuit board; lead length 1 mm. = 25 C unless otherwise specified. T j V F forward voltage see Fig.3 1N4148 I F = 1 ma - 1 V 1N4448 I F = 5 ma V I F = 1 ma - 1 V I R reverse current V R = 2 V; see Fig.5 25 na V R = 2 V; T j = 15 C; see Fig.5-5 ma I R reverse current; 1N4448 V R = 2 V; T j = 1 C; see Fig.5-3 ma C d diode capacitance f = 1 MHz; V R = V; see Fig.6-4 pf t rr reverse recovery time when switched from I F = 1 ma to - I R = 6 ma; R L = 1 W; measured at I R = 1 ma; see Fig.7 V fr forward recovery voltage when switched from I F = 5 ma; t r = 2 ns; see Fig.8 4 ns V R th(j tp) thermal resistance from junction to tie point lead length 1 mm 24 K/W R th(j a) thermal resistance from junction to ambient lead length 1 mm; note 1 35 K/W 1. Device mounted on a printed circuit board without metallization pad.
7 High speed diodes 1N4148; 1N mbg451 6 handbook, halfpage MBG464 I F (ma) I F (ma) 2 4 (1) (2) (3) Tamb ( C) 2 1 V F (V) 2 Device mounted on an FR4 printed circuit board; lead length 1 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. (1) T j = 175 C; typical values. (2) T j = 25 C; typical values. (3) T j = 25 C; maximum values. Fig.3 Forward current as a function of forward voltage. 1 2 handbook, full pagewidth MBG74 I FSM (A) t p (µs) 1 4 Based on square wave currents. T j = 25 C prior to surge. Fig.4 Maximum permissible non repetitive peak forward current as a function of pulse duration.
8 High speed diodes 1N4148; 1N4448 I R (µa) mgd handbook, halfpage C d (pf) 1. MGD4 1 (1) (2) T j ( C) V R (V) 2 (1) V R = 75 V; typical values. (2) V R = 2 V; typical values. f = 1 MHz; T j = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values.
9 TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER VOLTAGE RANGE 4 to 1 CURRENT 1. Ampere FEATURES * Fast switching * Low leakage * Low forward voltage drop * High current capability * High surge capability * High reliability DO 41 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V rate flame retardant * Lead: MIL STD 22E, Method 28 guaranteed * Mounting position: Any * Weight:.33 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 6 Hz, resistive or inductive load. For capacitive load, derate current by 2%. Dimensions in inches and (millimeters) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 75 o C Peak Forward Surge Current 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at 1.A DC Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25 o C Maximum Full Load Reverse Current Full Cycle Average,.375*(9.5mm) lead length at T L = 55 o C Maximum Reverse Recovery Time (Note 1) SYMBOL VRRM VRMS VDC IO IFSM VF IR trr BA157 BA158 BA UNITS u u nsec Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range CJ TJ, TSTG to + 15 pf C NOTES : 1. Test Conditions: IF =.5A, IR = 1.A, IRR =.25A 2. Measured at 1 MHZ and applied reverse voltage of 4. volts
10 RATING AND CHARACTERISTIC CURVES ( BA157 THRU BA159 )
11 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE 2 to 13 CURRENT 3. Amperes FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability DO 27 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V rate flame retardant * Lead: MIL STD 22E, Method 28 guaranteed * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 1.18 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 6 Hz, resistive or inductive load. For capacitive load, derate current by 2%. Dimensions in inches and (millimeters) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current.375*(9.5mm) lead length at T L = 15 o C Peak Forward Surge Current 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) IFSM 2 Maximum Instantaneous Forward Voltage at 3.A DC VF 1.1 Maximum DC Reverse = 25 o C 5. u at Rated DC Blocking = 1 o C 5 IR Maximum Full Load Reverse Current Average, Full Cycle 3 u.375*(9.5mm) lead length at T L = 75 o C NOTES : Measured at 1 MHZ and applied reverse voltage of 4. volts SYMBOL VRRM VRMS VDC IO BY251 BY252 BY253 BY254 BY Typical Junction Capacitance (Note) CJ 4 pf Typical Thermal Resistance R q J A 3 C/ W Operating and Storage Temperature Range TJ, TSTG 65 to C 3. UNITS
12 RATING AND CHARACTERISTIC CURVES (BY251 THRU BY255)
13 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 6. Amperes FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability * High surge current capability R 6 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V rate flame retardant * Lead: MIL STD 22E, Method 28 guaranteed * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 2.8 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 6 Hz, resistive or inductive load. For capacitive load, derate current by 2%. Dimensions in inches and (millimeters) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 6 o C Peak Forward Surge Current 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at 6.A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance Operating and Storage Temperature Range NOTES = 25 o C Maximum Full Load Reverse Current Average Full Cycle.375*(9.5mm) lead length at T L = 75 o = 1 o C Measured at 1 MHZ and applied reverse voltage of 4. volts SYMBOL VRRM VRMS VDC IO IFSM VF IR TJ, TSTG P6A P6B P6D P6G P6J P6K P6M 6A5 6A1 6A2 6A4 6A6 6A8 6A1 UNITS Typical Junction Capacitance (Note) CJ 15 pf R q J A to u u C/ W C
14 RATING AND CHARACTERISTIC CURVES( 6A5 P6A THRU 6A1 P6M )
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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