EMY1 / UMY1N / FMY1A. Emitter common (dual transistors) Datasheet. Parameter Value SOT-553 SOT-353 V CEO -50V I C. -150mA

Transcription

1 EMY1 / UMY1N / FMY1A Emitter common (dual transistors) Datasheet loutline Parameter Value SOT-553 SOT-353 V CEO -50V <For Tr1(PNP)> I C -150mA EMY1 UMY1N <For Tr2(NPN)> (EMT5) (UMT5) Parameter Value SOT-25 V CEO 50V I C 150mA FMY1A (SMT5) lfeatures 1) Included a 2SA1037AK and a 2SC2412K transistor in a EMT, UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) PNP and NPN transistors have common emitters. 4) Mounting cost and area can be cut in half. linner circuit EMY1 / UMY1N FMY1A lapplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lpackaging specifications Part No. EMY1 UMY1N FMY1A Package SOT-553 (EMT5) SOT-353 (UMT5) SOT-25 (SMT5) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 1616 T2R Y TR Y T Y ROHM Co., Ltd. All rights reserved. 1/ Rev.003

2 EMY1 / UMY1N / FMY1A Datasheet labsolute maximum ratings (T a = 25 C) Parameter Symbol Tr1(PNP) Tr2(NPN) Unit Collector-base voltage V CBO V Collector-emitter voltage V CEO V Emitter-base voltage V EBO -6 7 V Collector current I C ma Power dissipation EMY1/ UMY1N P *1 *2 D 150 mw/total FMY1A P *1 *3 D 300 mw/total Junction temperature T j 150 Range of storage temperature T stg -55 to +150 lelectrical characteristics (T a = 25 C) <For Tr1(PNP)> Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector-base breakdown voltage BV CBO I C = -50μA V Collector-emitter breakdown voltage BV CEO I C = -1mA V Emitter-base breakdown voltage BV EBO I E = -50μA V Collector cut-off current I CBO V CB = -60V na Emitter cut-off current I EBO V EB = -6V na Collector-emitter saturation voltage V CE(sat) I C = -50mA, I B = -5mA mv DC current gain h FE V CE = -6V, I C = -1mA V Transition frequency f CE = -12V, I E = 2mA, T f = 100MHz MHz Output capacitance C ob V CB = -12V, I E = 0mA, f = 1MHz pf lelectrical characteristics (T a = 25 C) <For Tr2(NPN)> Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector-base breakdown voltage BV CBO I C = 50μA V Collector-emitter breakdown voltage BV CEO I C = 1mA V Emitter-base breakdown voltage BV EBO I E = 50μA V Collector cut-off current I CBO V CB = 60V na Emitter cut-off current I EBO V EB = 7V na Collector-emitter saturation voltage V CE(sat) I C = 50mA, I B = 5mA V DC current gain h FE V CE = 6V, I C = 1mA V Transition frequency f CE = 12V, I E = -2mA, T f = 100MHz MHz Output capacitance C ob V CB = 12V, I E = 0A, f = 1MHz *1 Each terminal mounted on a referenve land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded pf 2015 ROHM Co., Ltd. All rights reserved. 2/ Rev.003

3 lelectrical characteristic curves(t a =25 C) <For Tr1(PNP)> Fig.1 Ground Emitter Propagation Characteristics Fig.2 Grounded Emitter Output Characteristics Fig.3 DC Current Gain vs. Collector Current (I) Fig.4 DC Current Gain vs. Collector Current (li) 2015 ROHM Co., Ltd. All rights reserved. 3/ Rev.003

4 lelectrical characteristic curves(t a =25 C) <For Tr1(PNP)> Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(l) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current(ll) Fig.7 Base-Emitter Saturation Voltage vs. Collector Current (I) Fig.8 Gain Bandwith Product vs. Emitter Current 2015 ROHM Co., Ltd. All rights reserved. 4/ Rev.003

5 lelectrical characteristic curves(t a =25 C) <For Tr1(PNP)> Fig.9 Collector Output Capacitance vs. ollector-base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.10 Safe Operating Area Fig.11 Safe Operating Area Fig.12 Safe Operating Area 2015 ROHM Co., Ltd. All rights reserved. 5/ Rev.003

6 lelectrical characteristic curves(t a =25 C) <For Tr2(NPN)> Fig.13 Ground Emitter Propagation Characteristics Fig.14 Grounded Emitter Output Characteristics Fig.15 DC Current Gain vs. Collector Current (I) Fig.16 DC Current Gain vs. Collector Current (li) 2015 ROHM Co., Ltd. All rights reserved. 6/ Rev.003

7 lelectrical characteristic curves (T a = 25 C) <For Tr2(NPN)> Fig.17 Collector-Emitter Saturation Voltage vs. Collector Current(l) Fig.18 Collector-Emitter Saturation Voltage vs. Collector Current(ll) Fig.19 Base-Emitter Saturation Voltage vs. Collector Current (I) Fig.20 Gain Bandwith Product vs. Emitter Current 2015 ROHM Co., Ltd. All rights reserved. 7/ Rev.003

8 lelectrical characteristic curves(t a = 25 C) <For TR2(NPN)> Fig.21 Collector Output Capacitance vs. ollector-base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.22 Safe Operating Area Fig.23 Safe Operating Area Fig.24 Safe Operating Area 2015 ROHM Co., Ltd. All rights reserved. 8/ Rev.003

9 ldimensions 2015 ROHM Co., Ltd. All rights reserved. 9/ Rev.003

10 ldimensions 2015 ROHM Co., Ltd. All rights reserved. 10/ Rev.003

11 ldimensions 2015 ROHM Co., Ltd. All rights reserved. 11/ Rev.003

12