BYT60P-400 BYT260PIV-400 / BYT261PIV-400
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1 BY6P-4 BY26PIV-4 / BY261PIV-4 FAS RECOVERY RECIFIER DIODES MAIN PRODUC CHARACERISICS K2 A2 A2 K1 I F(AV) V RRM V F (max) trr (max) 2 x 6 A 4 V 1.4 V s K1 A1 BY261PIV-4 K2 A1 BY26PIV-4 FEAURES AND BENEFIS VERY LOW REVERSE RECOVERY IME VERY LOW SWICHING LOSSES LOW NOISE URN-OFF SWICHING INSULAED PACKAGE: ISOOP Isulatio voltage: 2 V RMS Capacitace = 45 pf Iductace < 5 H DESCRIPION hese rectifier devices are suited for free-wheelig fuctio i coverters ad motor cotrol circuits. Packaged i ISOOP or SOD93, they are iteded for use i Switch Mode Power Supplies. ABSOLUE RAINGS (limitig values, per diode) ISOOP M (Plastic) K SOD93 (Plastic) A Symbol Parameter Value Uit V RRM Repetitive peak reverse voltage 4 V I FRM Repetitive peak forward curret tp=5 µs F=1kHz 1 A I F(RMS) RMS forward curret ISOOP 14 A SOD93 1 I F(AV) Average forward curret δ =.5 c = 7 C ISOOP 6 A c = 8 C SOD93 I FSM Surge o repetitive forward curret ISOOP 6 A tp = 1 ms Siusoidal SOD93 5 stg Storage temperature rage - 4 to + 1 C j Maximum operatig juctio temperature 1 C M: ISOOP is a registered trademark of SMicroelectroics. May 2 - Ed: 4D 1/7
2 BY6P-4 / BY26PIV-4 / BY261PIV-4 HERMAL RESISANCES Symbol Parameter Value Uit R th(j-c) Juctio to case ISOOP Per diode.8 C/W otal.45 SOD93 otal.7 R th(c) Couplig.1 C/W Whe the diodes 1 ad 2 are used simultaeously : j(diode 1) = P(diode) x R th(j-c) (Per diode) + P(diode 2) x R th(c) SAIC ELECRICAL CHARACERISICS (per diode) Symbol Parameter est Coditios Mi. yp. Max. Uit V F * Forward voltage drop j = 25 C I F = 6A 1.5 V j = 1 C 1.4 I R ** Reverse leakage curret j = 25 C V R =V RRM 6 µa j = 1 C 6 ma Pulse test : * tp = 38 µs, δ <2% ** tp = 5 ms, δ <2% o evaluate the coductio losses use the followig equatio: 2 P = 1.1 x I F(AV) +.45 I F (RMS) RECOVERY CHARACERISICS (per diode) Symbol est Coditios Mi. yp. Max. Uit t rr j = 25 C I F =1A V R = 3V di F /dt = - 15A/µs 1 s I F =.5A I R =1A I rr =.25A URN-OFF SWICHING CHARACERISICS Symbol Parameter est Coditios Mi. yp. Max. Uit t IRM Maximum reverse di F /dt = - 24 A/µs V CC = 2 V 75 s recovery time di F /dt = - 48 A/µs I F =6A I L p.5 µh RM Maximum reverse di F /dt = - 24 A/µs 18 A j = 1 C recovery curret di F /dt = - 48 A/µs (see fig. 13) 24 C= V ur-off overvoltage j = 1 C V CC = 12V I F =I F(AV) / coefficiet di VRP F /dt = - 6A/µs L p =.8µH CC (see fig. 14) 2/7
3 BY6P-4 / BY26PIV-4 / BY261PIV-4 Fig. 1: Average forward power dissipatio versus average forward curret (per diode, for ISOOP). Fig. 2: Peak curret versus form factor (per diode, for ISOOP). PF(av)(W) 11 1 δ =.2 δ=.5 9 δ =.1 8 δ =1 7 δ = IF(av) (A) δ=tp/ tp IM(A) P=75W δ=tp/ tp P=1W P=W P=25W δ Fig. 3: Average forward curret versus ambiet temperature (δ=.5, per diode for ISOOP) IF(av)(A) Rth(j-a)=Rth(j-c) SOD93 ISOOP Rth(j-a)=2.5 C/W 1 δ=tp/ tp amb( C) Fig. 4-1: No repetitive surge peak forward curret versus overload duratio (SOD93). Fig. 4-2: No repetitive surge peak forward curret versus overload duratio (per diode, for ISOOP) IM(A) c= C c=25 C c=75 C IM t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ IM(A) c= C 2 c=25 C 2 1 c=75 C 1 IM t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ 3/7
4 BY6P-4 / BY26PIV-4 / BY261PIV-4 Fig. 5-1: Relative variatio of thermal impedace juctio to case versus pulse duratio (per diode for ISOOP). Fig. 5-2: Relative variatio of thermal impedace juctio to case versus pulse duratio (SOD93). 1. K=[Zth(j-c)/Rth(j-c)] 1. K=[Zth(j-c)/Rth(j-c)].5 δ =.5.5 δ =.5.2 δ =.2 δ =.1 Sigle pulse tp(s) δ=tp/ tp.1 1E-3 1E-2 1E-1 1E+.2 δ =.2 δ =.1 Sigle pulse tp(s) δ=tp/ tp.1 1E-3 1E-2 1E-1 1E+ Fig. 6: Forward voltage drop versus forward curret (maximum values, per diode for ISOOP). Fig. 7: Juctio capacitace versus reverse voltage applied (typical values, per diode for ISOOP). 1 1 IFM(A) ypical values j=1 C j=25 C j=1 C VFM(V) C(pF) F=1MHz j=25 C 8 VR(V) Fig. 8: Recovery charges versus di F /dt (per diode for ISOOP). Fig. 9: Recovery curret versus di F /dt (per diode for ISOOP). Qrr(µC) 1.6 9% cofidece 1.4 j=1 C IRM(A) 9% cofidece j=1 C /7
5 BY6P-4 / BY26PIV-4 / BY261PIV-4 Fig. 1: rasiet peak forward voltage versus di F /dt (per diode for ISOOP). Fig. 11: Forward recovery time versus di F /dt (per diode for ISOOP) VFP(V) 9% cofidece j=1 C tfr(µs) % cofidece j=1 C Fig. 12: Dyamic parameters versus juctio temperature. Qrr;IRM[j] / Qrr;IRM[j=1 C] IRM. Qrr j( C) Fig. 13: ur-off switchig characteristics (without serie iductace). Fig. 14: ur-off switchig characteristics (with serie iductace). IF IF LC DU VF dif/dt LC DU LP VF dif/dt IRM VRP tirm 5/7
6 BY6P-4 / BY26PIV-4 / BY261PIV-4 PACKAGE MECHANICAL DAA ISOOP DIMENSIONS REF. Millimeters Iches Mi. Max. Mi. Max. A A B C C D D E E E typ..976 typ. G G G F F P /7
7 BY6P-4 / BY26PIV-4 / BY261PIV-4 PACKAGE MECHANICAL DAA SOD93 Plastic DIMENSIONS REF. Millimeters Iches Mi. yp. Max. Mi. yp. Max. A C D D E F F G H L L L L L O Orderig type Markig Package Weight Base qty Delivery mode BY6P-4 BY6P-4 SOD g. 3 ube BY26PIV-4 BY26PIV-4 ISOOP 28 g. (without screws) 1 ube BY261PIV-4 BY261PIV-4 ISOOP 28 g. (without screws) 1 ube Coolig method: by coductio (C) Recommeded torque value (ISOOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommeded for moutig the package o the heatsik ad the 4 screws give with the screw versio).he screws supplied with the package are adapted for moutig o a board (or other types of termials) with a thickess of.6 mm mi ad 2.2 mm max. Recommeded torque value (SOD93):.8 N.m. Maximum torque value (SOD93): 1. N.m. Epoxy meets UL94,V Iformatio furished is believed to be accurate ad reliable. However, SMicroelectroics assumes o resposibility for the cosequeces of use of such iformatio or foray ifrigemet of patets or other rights of third parties which may result from its use. No licese is grated by implicatio or otherwise uder ay patet or patet rights of SMicroelectroics. Specificatios metioed i this publicatio are subject to chage without otice. his publicatio supersedes ad replaces all iformatio previously supplied. SMicroelectroics products are ot authorized for use as critical compoets i life support devices or systems without express writte approval of SMicroelectroics. he S logo is a registered trademark of SMicroelectroics 2 SMicroelectroics - Prited i Italy - All rights reserved. SMicroelectroics GROUP OF COMPANIES Australia - Brazil - Chia - Filad - Frace - Germay - Hog Kog - Idia - Italy - Japa - Malaysia Malta - Morocco - Sigapore - Spai - Swede - Switzerlad - Uited Kigdom - U.S.A. 7/7
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BYT60P-1000 BYT261PIV-1000
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Symbol Parameter Value Unit Peak pulse load dump overvoltage
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STPS0540Z / STPS0560Z
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Part Number Marking Package Packaging
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STPS10L45CT/CG/CF/CFP
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STPS20L45CF/CW/CT/CFP/CG
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STTH1W6C Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH22TV TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER MAIN PRODUCT CHARACTERISTICS I (AV) Up to 2 x 12 A V RRM 2 V T j 15 C V (typ).75 V t rr (typ) 41 ns EATURES AND BENEITS Suited for SMPS Very Low orward Losses
STTH30W02C. Turbo 2 ultrafast high voltage rectifier. Features. Description
STTH3W2C Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant
STTH200W03TV1. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching and conduction losses Insulated package
STTH200W06TV1. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching and conduction losses Insulated package
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
SPS315C HIH VOL POWR SCHOY RCIFIR MIN PROUC CHRCRISICS I F(V) V RRM x15 15 V j 175 C V F (max).75 V FURS N BNFIS HIH JUNCION MPRUR CPBILIY OO R OFF BWN L CURRN N FORWR VOL ROP LOW L CURRN INSUL PC: O-FPB
STPS3030/CT/CG/CR. Low drop power Schottky rectifier. Main product characteristics. Features and benefits. Description
j STPS33/CT/CG/CR Low drop power Schottky rectifier Main product characteristics I F(AV) 2 x 15 A K V RRM 3 V T j (max) V F (max) 15 C.42 V K Features and benefits Very small conduction losses Negligible
STTH6112TV. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Order codes. Description STTH6112TV2 STTH6112TV1
Ultrafast recovery - 12 V diode Main product characteristics I F(AV) 2 x 3 A K2 A2 A2 K1 V RRM 12 V T j 15 C V F (typ) t rr (typ) 1.3 V 45 ns K1 A1 STTH6112TV1 K2 A1 STTH6112TV2 Features and benefits A1
STTH2003CG. Hight frequency secondary rectifier. Main product characteristics. Features and benefits. Description. Order codes.
Hight frequency secondary rectifier Main product characteristics I F(AV) V RRM T j (max) V F (max) t rr (typ) Features and benefits Combines highest recovery and reverse voltage performance Ultra-fast,
STTH20003TV. Ultrafast high voltage rectifier. Mian product characteristics. Features and benefits. Description. Order codes
Ultrafast high voltage rectifier Mian product characteristics I F(AV) up to 2 x 1 A V RRM 3 V A1 K1 T j (max) 15 C A2 K2 V F (typ).95 V K1 t rr (max) 9 ns A1 Features and benefits K2 Combines highest recovery
STTH200W04TV1. Turbo 2 ultrafast high voltage rectifier. Features. Description
STTH2W4TV1 Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package:
STTA2006P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 20A V RRM 600V. t rr (typ) 30ns. VF (max) 1.
STTA26P/PI TURBOSWITCH ULTRA-FAST HIGH OLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(A) RRM 2A 6 t rr (typ) 3ns F (max) 1.5 K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERA- TIONS: FREEWHEEL OR
STTH120L06TV. Turbo 2 ultrafast high voltage rectifier
Turbo 2 ultrafast high voltage rectifier Datasheet - production data Features A1 A2 A1 K1 Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated
STTH15RQ06-Y. Automotive turbo 2 ultrafast high voltage rectifier
Automotive turbo 2 ultrafast high voltage rectifier Datasheet - production data K K D²PAK K A A NC Description The STTH15RQ06-Y has been developed to be used in application requiring a high-voltage secondary
STTH50W06S. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant component
STTH2003CT/CG/CF/CR/CFP
STTH23CT/CG/CF/CR/CFP HIGH FREQUENCY SECONDRY RECTIFIER MJOR PRODUCT CHRCTERISTICS I F(V) V RRM 2x 3 V Tj (max) 175 C V F (max) 1 V trr (max) 35 ns D 2 P STTH23CG FETURES ND BENEFITS COMBINES HIGHEST RECOVERY
STPS3045FP. Power Schottky rectifier. Features. Description
STPS345FP Power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capability specified A K A Description Schottky
STTH102-Y. Automotive high efficiency ultrafast diode. Features. Description
Automotive high efficiency ultrafast diode Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature ECOPACK 2 compliant component
STTH1R02-Y. Automotive ultrafast rectifier
Automotive ultrafast rectifier Datasheet - production data Features K K AEC-Q101 qualified Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
STTH60AC06C. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Features Datasheet production data A1 A2 K Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance Insulated
STPS10170C. High voltage power Schottky rectifier. Description. Features
High voltage power Schottky rectifier Description Datasheet production data This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Table 1. Device summary Symbol
STTH60L06TV. Turbo 2 ultrafast high voltage rectifier. Main product characteristics. Features and benefits. Order codes.
STTH6L6TV Turbo 2 ultrafast high voltage rectifier Main product characteristics I (AV) V RRM T j V (typ) t rr (typ) eatures and benefits Ultrafast switching Low reverse current Low thermal resistance Reduces
STPS10H100CT/CG/CR/CFP
STPS1H1CT/CG/CR/CFP HIGH VOLTG POWR SCHOTTY RCTIFIR MIN PROUCT CHRCTRISTICS I F(V) V RRM 2x5 1 V Tj 175 C V F (max).61 V FTURS N BNFITS HIGH JUNCTION TMPRTUR CPBILITY FOR CONVRTRS LOCT IN CONFIN NVIRONMNT
STPS3045C-Y. Automotive power Schottky rectifier. Features. Description
STPS345C-Y Automotive power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche rated AEC-Q qualified Description
STTH3006. Turbo 2 ultrafast high voltage rectifier
Turbo 2 ultrafast high voltage rectifier Datasheet - production data Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package: DOP3I
STTH1210-Y. Automotive ultrafast recovery - high voltage diode. Features. Description
Automotive ultrafast recovery - high voltage diode Datasheet production data Features AEC-Q1 qualified Ultrafast, soft recovery Very low conduction and switching losses High frequency and high pulsed current
Obsolete Product(s) - Obsolete Product(s)
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
HEXFET MOSFET TECHNOLOGY
PD - 91555A POWER MOSFET SURFACE MOUNT (SMD-1) IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(o) ID IRFNG40 3.5Ω 3.9A HEXFET MOSFET techology is the key to Iteratioal
STPS30H100C. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description. Negligible switching losses Low leakage current
Datasheet 100 V power Schottky rectifier A1 A2 K Features Negligible switching losses Low leakage current K Good trade off between leakage current and forward voltage drop Avalanche rated ECOPACK 2 compliant
STPS40170C-Y. Automotive high voltage power Schottky rectifier. Features. Description
STPS47C-Y Automotive high voltage power Schottky rectifier Features High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal
STPS40H100CW. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description
Datasheet 100 V power Schottky rectifier A1 A2 TO-247 K A2 K A1 Features Negligible switching losses Low leakage current Good trade-off between leakage current and forward voltage drop Low thermal resistance
STTH2002C. High efficiency ultrafast diode. Features. Description
High efficiency ultrafast diode Datasheet - production data K TO-220AB K A1 A1 A2 A1 K A2 K A2 I 2 PAK D 2 PAK K K A1 A2 A1 K TO-220FPAB A1 KA2 A2 Features Suited for SMPS Low losses Low forward and reverse
STPS61L45C. Power Schottky rectifier. Features. Description
Power Schottky rectifier Features High current capability Avalanche rated Low forward voltage drop current High frequency operation K A1 A2 K Description Dual center tap Schottky rectifier suited for high
STPSC V power Schottky silicon carbide diode. Features. Description
600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC
FERD15S50. Field effect rectifier. Features. Description
Field effect rectifier Datasheet production data K Table 1. Device summary Symbol Value I F(AV) 15 A V RRM 50 V T j (max) +150 C V F (typ) A K PowerFLAT 5x6 FERD15S50DJF A 0.30 V Features ST proprietary
STTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features
Automotive high voltage ultrafast rectifier A K K A Description Datasheet - production data The, which is using ST s new 1000 V planar technology, is especially suited for switching mode base drive and
STTH8R02D-Y. Automotive ultrafast rectifier
Automotive ultrafast rectifier Datasheet - production data A1 A2 K1 K2 Description The STTH8R02D-Y is especially suited for switching mode base drive and transistor circuits. The device is also intended
STPS1045B-Y. Automotive power Schottky rectifier. Features. Description
STPS45B-Y Automotive power Schottky rectifier Features Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability Avalanche specification AEC-Q qualified
STTH6003. High frequency secondary rectifier
High frequency secondary rectifier Datasheet - production data Features A1 A2 TO-247 Combines highest recovery and voltage performance Ultrafast, soft and noise-free recovery Low inductance and low capacitance
STPS20S100C. 100 V, 20 A power Schottky rectifier. Features. Description
STPS2SC V, 2 A power Schottky rectifier Features High junction temperature capability for converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses
Obsolete Product(s) - Obsolete Product(s)
STTA112U TURBOSWTCH ULTRA-FAST HGH VOLTAGE DODE MAN PRODUCT CHARACTERSTCS F(AV) VRRM trr (typ) 1A 1200V 65ns FEATURES AND BENEFTS SPECFC TO THE FOLLOWNG OPERATONS: SNUBBNG OR CLAMPNG, DEMAGNETZATON AND
STPS10150C. High voltage power Schottky rectifier. Description. Features
High voltage power Schottky rectifier Datasheet production data Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Table 1. Device summary Symbol
STPS200170TV1. High voltage power Schottky rectifier
High voltage power Schottky rectifier Datasheet - production data A1 A2 A2 K1 K2 K2 Description This high voltage Schottky rectifier is suited for high frequency switch mode power supplies. Packaged in
STPS20S100C. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description
Datasheet 100 V power Schottky rectifier K A1 A2 A2 K A1 TO-220AB K K A2 A1 TO-220FPAB Features High junction temperature capability for converters located in confined environment Low leakage current at