AVS08 AUTOMATIC VOLTAGE SWITCH (SMPS < 200W) VSS. Mode. Osc / In
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1 AVS08 AUTOMATIC VOLTAGE SWITCH (SMPS < 200W) CONTROLLER 50/60Hz FULL COMPATIBILITY INTEGRATED VOLTAGE REGULATOR TRIGGERING PULSE TRAIN OF THE TRIAC PARASITIC FILTER LOW POWER CONSUMPTION A2 TRIAC HIGH EFFICIENCY AND SAFETY SWITCHING UNINSULATED PACKAGE : AVS08CB INSULATED PACKAGE 2500V( RMS ) : AVS08CBI V DRM = ± 500 V I T(RMS) :5A AVS1BCP08 DIP-8 AVS08CB TO-220AB G A2 A1 DESCRIPTION The AVS08 kit is an automatic mains selector (110/220V AC) to be used in SMPS < 200 W. It is composed of 2 devices : The Controller is optimized for low consumption and high security triggering of the triac. When connected to V SS, the mode input activates an additional option. If the main power drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids any high voltage spike when the voltage is restored to 220V. When connected to V DD, the mode input desactivates this option. The TRIAC is specially designed for this application. An optimization between sensitivity and dynamic parameters of the triac gate highly reduces the losses of supply resistor and allows excellent immunity against disturbances. PIN CONNECTION VSS Osc / In Osc / Out VDD VM Mode N.C. VG January Ed: 3C 1/7
2 BLOCK DIAGRAM AVS1BCP08 Supply Peak Voltage Detector Reset Parasitic Filter CP MODE Mains mode Controller Q AVS08CB or AVS08CBI A2 OSC/IN OSC/OUT Zero Crossing Detector Oscillator S CP Triggering Time Controller Q A1 ABSOLUTE MAXIMUM RATINGS CONTROLLER AVS1BCP08 Symbol Parameter Value Min. Max. Unit V SS Supply voltage V V I /V O I / O voltage V SS V I I /I O I / O current ma Tstg Storage Temperature C Toper Operating Temperature code ''C'' C TRIAC AVS08CB / AVS08CBI T j = +25 C (unless otherwise specified) Symbol Parameter Value Unit V DRM Repetitive peak off-state voltage (2) ± 500 V I T(RMS) RMS on-state current (360 conduction angle) AVS08CB T C = 100 C 5 A AVS08CBI T C = 95 C I TSM Non repetitive surge peak on-state current ( T j initial = 25 C ) t = 8.3ms t = 10ms A I 2 t I 2 t value t = 10ms 21 A 2 s di / dt Critical rate of rise of on-state current (1) Repetitive F = 50Hz Non Repetitive 20 A/µs 100 T stg T j Storage Temperature Junction Temperature Range C (1) Gate supply : IG = 100mA di/dt = 1A/µs (2) T j = 125 C 2/7
3 THERMAL RESISTANCE TRIAC AVS08CB / AVS08CBI Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 C/W Rth (j-c) DC Junction to case for DC AVS08CB 5.4 C/W AVS08CBI 6.3 Rth (j-c) AC Junction to case for 360 conduction angle (F = 50Hz) AVS08CB 4.0 C/W AVS08CBI 4.7 DC GENERAL ELECTRICAL CHARACTERISTICS TRIAC AVS08CB / AVS08CBI Symbol Parameter Min. Value Max. Unit V TM * I TM =7A t p = 10ms T j = 25 C 1.65 V I DRM * V DRM rated Gate open T j = 25 C 10 µa * For either polarity of electrode A2 voltage with reference to electrode A1 Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 60Hz). (Curves are cut off by (di/dt)c limitation) 3/7
4 DC GENERAL ELECTRICAL CHARACTERISTICS (continued) CONTROLLER AVS1BCP08 Toper = 25 C (unless otherwise specified) Symbol Parameter Value Min. Typ. Max. Unit V SS (pin 1) (Vreg) Shunt regulator V I SS (pin 1) (Vreg) (@ V SS = 9V) I SS (pin 1) (@ triac gate non connected) F (pin 3) (@ R = 91kΩ) (C = 100pF) Supply current ma Quiescent current 1 ma Oscillator frequency KHz V M (pin 8) Vth (3) Peak voltage of detection high-threshold V V M (pin 8) Vh (3) Peak voltage of detection hysteresis V (1) V M (pin 8) Vth (3) Zero-crossing detection high-threshold mv V M (pin 8) Vh (3) Zero-crossing detection hysteresis mv (2) Vrazht (4) Power-on-reset activation threshold Vreg x 0.89 V (2) Vrazlt (4) Power-down-reset activation threshold V Mode (pin 7) V IL (4) V IH (4) 0.7 Vreg 0.3 Vreg V V G (pin 5) V OL (I VG = 25mA) Leakage current (V G =V DD ) V µa NOTE: (1) : This value gives a typical noise immunity on the zero-crossing detectionof 110mV x 1018/18 = 6.20V on the main supply (2) : See following diagram (3) : Voltage referred to V SS (4) : Voltage referred to VDD POWER-ON AND POWER-OFF RESET BEHAVIOUR Undetermined Power-on reset Normal operation Power-off reset Undetermined 0V 0V -2.7V -2.7V Vrazht Vrazlt Vreg = VSS - VDD 4/7
5 TYPICAL APPLICATION 110 V or 220V NTC NTC 1 N x 9.1KΩ 1W R1 1MΩ 1 % R2 18KΩ 1 % V M 8 7 AVS1BCP08 option kΩ 1 % 100pF 5 % AVS08 V SS 5 4 V V DD SS V G V DD 390Ω AVS08CB or AVS08CBI G 33µF 16V A 1 A 2 ORDERING INFORMATION AVS08 CONTROLLER TRIAC AVS 1B C P08 AVS 08 C B I AUTOMATIC VOLTAGE SWITCH IDENTIFICATION PACKAGE: DIP-8 AUTOMATIC VOLTAGE SWITCH IDENTIFICATION INSULATED Suffix PACKAGE B: TO-220AB OPERATING TEMPERATURE C = 0/70 C OPERATING TEMPERATURE C = 0/70 C 5/7
6 PACKAGE MECHANICAL DATA DIP-8 Plastic (controller) DIMENSIONS REF. Millimetres Inches a1 I L b1 Min. Typ. Max. Min. Typ. Max. a B Z b B e3 D e B1 F E B b b D E e e F I L Z /7
7 PACKAGE MECHANICAL DATA TO-220AB (Plastic) (Triac) DIMENSIONS l4 b1 e B l3 I l2 L A a1 a2 b2 c2 M C c1 F REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a a B b b C c c e F I I L l l M Cooling method: C Recommended torque value: 0.8 m.n Maximum torque value: 1 m.n OTHER INFORMATION Part Number Marking Weight Base Qty Packing mode AVS08CB AVS08CB 2.3 g 1000 Tube AVS08CBI AVS08CBI 2.3 g 1000 Tube AVS1BCP08 AVS1BCP g 2000 Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 7/7
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L9686 AUTOMOTIVE DIRECTION INDICATOR RELAY DRIVER IN CAR DIRECTION INDICATORS FLASH FREQUENCY DOUBLES TO INDI- CATE LAMP FAILURE DUMP PROTECTION ( ± 80 V) REVERSE BATTERY PROTECTION DESCRIPTION The L9686
M74HC51TTR DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE
DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE HIGH SPEED: t PD = 11ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL
Obsolete Product(s) - Obsolete Product(s)
SYNCHRONOUS PARALLEL OR SERIAL IN/SERIAL OUT 8 - STAGE STATIC SHIFT REGISTER MEDIUM SPEED OPERATION : 12 MHz (Typ.) At V DD = 10V FULLY STATIC OPERATION 8 MASTER-SLAVE FLIP-FLOPS PLUS OUTPUT BUFFERING
M74HC10TTR TRIPLE 3-INPUT NAND GATE
TRIPLE 3-INPUT NAND GATE HIGH SPEED: t PD = 8ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
Obsolete Product(s) - Obsolete Product(s)
HEX BUFFER/CONVERTER (INVERTING) PROPAGATION DELAY TIME t PD = 40ns (TYP.) at V DD = 10V C L = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT CAPABILITY
M74HC4049TTR HEX BUFFER/CONVERTER (INVERTER)
HEX BUFFER/CONVERTER (INVERTER) HIGH SPEED: t PD = 8ns (TYP.) at V CC =6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
Obsolete Product(s) - Obsolete Product(s)
QUAD 2-INPUT NAND GATE HIGH SPEED: t PD = 8ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V
STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE
M74HCT02TTR QUAD 2-INPUT NOR GATE
QUAD 2-INPUT NOR GATE HIGH SPEED: t PD = 15 ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) BALANCED PROPAGATION
Obsolete Product(s) - Obsolete Product(s)
SINGLE INVERTER (OPEN DRAIN) HIGH SPEED: t PD = 3.7ns (TYP.) at V CC =5V LOW POWER DISSIPATION: I CC =1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH =V NIL = 28% V CC (MIN.) POWER DOWN PROTECTION ON
HCF4077B QUAD EXCLUSIVE NOR GATE
QUAD EXCLUSIE NOR GATE MEDIUM-SPEED OPERATION t PHL =t PLH = 65ns (Typ.) at CL = 50 pf and DD = 10 QUIESCENT CURRENT SPECIFIED UP TO 20 5, 10 AND 15 PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I I = 100nA
HCF4017B DECADE COUNTER WITH 10 DECODED OUTPUTS
DECADE COUNTER WITH 10 DECODED OUTPUTS MEDIUM SPEED OPERATION : 10 MHz (Typ.) at V DD = 10V FULLY STATIC OPERATION STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V
74V1T07CTR SINGLE BUFFER (OPEN DRAIN)
SINGLE BUFFER (OPEN DRAIN) HIGH SPEED: t PD = 4.3ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS: V IH = 2V (MIN), V IL = 0.8V (MAX) POWER DOWN PROTECTION
LCP1511D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION. Application Specific Discretes A.S.D. TIP TIP GATE GND GND RING FEATURES SO-8
Application Specific Discretes A.S.D. LCP111D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES n DUAL PROGRAMMABLE TRANSIENT SUP- PRESSOR. n WIDE NEGATIVE FI VOLTAGE RANGE : V MGL
Obsolete Product(s) - Obsolete Product(s)
Snubberless high temperature 20 A Triacs Main features Symbol Value Unit I T(RMS) 20 A V DRM /V RRM 600 V I GT (Q1) 35 ma T j MAX 150 C Description Specifically designed to operate at 150 C, the new 20
Obsolete Product(s) - Obsolete Product(s)
QUAD 2-INPUT NAND GATE HIGH SPEED: t PD = 12ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) BALANCED PROPAGATION
TS HIGH THERMAL STABILITY MICROPOWER SHUNT VOLTAGE REFERENCE
HIGH THERMAL STABILITY MICROPOWER SHUNT VOLTAGE REFERENCE LOW Tc: ppm/ C MAXIMUM.V OUTPUT VOLTAGE LOW OPERATING CURRENT: 6µA max @ C HIGH PRECISION AT C: ±.% AND ±% STABLE WHEN USED WITH CAPACITIVE LOADS
Obsolete Product(s) - Obsolete Product(s)
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERA- TIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY.
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD5NM50 STD5NM50-1 500V 500V
HCF4040B RIPPLE-CARRY BINARY COUNTER/DIVIDERS 12 STAGE
RIPPLE-CARRY BINARY COUNTER/DIVIDERS 12 STAGE MEDIUM SPEED OPERATION : t PD = 80ns (TYP.) at V DD = 10V FULLY STATIC OPERATION COMMON RESET BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
HCF4020B RIPPLE-CARRY BINARY COUNTER/DIVIDERS 14 STAGE
RIPPLE-CARRY BINARY COUNTER/DIVIDERS 14 STAGE MEDIUM SPEED OPERATION: 16MHz (Typ.) at V DD = 10V FULLY STATIC OPERATION COMMON RESET BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V
STD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET
TYPE V DSS R DS(on) I D STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA STD7NS20 STD7NS20-1 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL R DS (on) = 0.35
TDA0161. Proximity Detectors. Features. Description. Block Diagram. 10mA Output Current Oscillator Frequency 10MHz Supply Voltage +4 to +35V
Proximity Detectors Features 10mA Output Current Oscillator Frequency 10MHz Supply Voltage +4 to +35V Description These monolithic integrated circuits are designed for metallic body detection by sensing
Obsolete Product(s) - Obsolete Product(s)
P-CHANNEL 20V - 0.065Ω - 5ASOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STT5PF20V 20 V < 0.080 Ω (@4.5V)
THBTxxx11D TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE. Application Specific Discretes A.S.D. 8 TIP 7 GND 6 GND 5 RING GND 3 RING FEATURES
Application Specific Discretes A.S.D. THBTxxx11D TRIPOLAR OEROLTAGE PROTECTION FOR TELECOM LINE FEATURES n BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND, AND AND BETWEEN TIP AND. n PEAK PULSE CURRENT
STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET
TYPE V DSS R DS(on) I D STS7PF30L P-CHANNEL 30V - 0.016Ω - 7ASO-8 STripFET II POWER MOSFET PRELIMINARY DATA STS7PF30L 30 V < 0.021 Ω 7A TYPICAL R DS (on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE
T1635H, T1650H. High temperature 16 A Snubberless Triacs. Applications. Description. Features
High temperature 16 A Snubberless Triacs Datasheet - production data D²PAK T16xxH-6G Features G A1 A1 G TO-220AB insulated T16xxH-6I Medium current Triac 150 C max. T j turn-off commutation Low thermal
TN22. Fluorescent tube lamp starter SCR. Features. Description
Fluorescent tube lamp starter SCR Features High clamping voltage structure (00 to 500 V) Low gate triggering current for direct drive from line ( 75 ma), ensuring high striking
HCF4099B 8 BIT ADDRESSABLE LATCH
8 BIT ADDRESSABLE LATCH SERIAL DATA INPUT - ACTIVE PARALLEL OUTPUT STORAGE REGISTER CAPABILITY - MASTER CLEAR CAN FUNCTION AS DEMULTIPLEXER QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL
-55 to 175 C T j ( ) Pulse width limited by safe operating area.
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V
74AC10B TRIPLE 3-INPUT NAND GATE
TRIPLE 3-INPUT NAND GATE HIGH SPEED: t PD = 4ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) 50Ω TRANSMISSION LINE DRIVING
STS5PF30L P-CHANNEL 30V Ω - 5A SO-8 STRIPFET POWER MOSFET
P-CHANNEL 30V - 0.070 Ω - 5A SO-8 STRIPFET POWER MOSFET TYPE V DSS R DS(on) I D STS5PF30L 30V
74AC00B QUAD 2-INPUT NAND GATE
QUAD 2-INPUT NAND GATE HIGH SPEED: t PD = 4ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) 50Ω TRANSMISSION LINE DRIVING
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS9NF3LL 30 V
74ACT00B QUAD 2-INPUT NAND GATE
QUAD 2-INPUT NAND GATE HIGH SPEED: t PD = 4.5ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS V IH = 2V (MIN.), V IL = 0.8V (MAX.) 50Ω TRANSMISSION
Z Standard 0.8 A Triacs. Description. Features
Standard 0.8 A Triacs Datasheet - production data A2 Description G A1 The Z00607 is suitable for low power AC switching applications. Typical applications include home appliances (electrovalve, pump, door
Obsolete Product(s) - Obsolete Product(s)
QUAD 2 CHANNEL MULTIPLEXER HIGH SPEED: t PD = 10ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: