Symbol Parameter Value Unit. BTA Tc = 90 C 12 A. BTB Tc = 95 C. Repetitive F = 50 Hz. Non Repetitive

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Linda Sherman
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1 BTA1 B/C BTB1 B/C STANDARD TRACS FEATURES HGH SURGE CURRENT CAPABLTY. COMMUTATON : (dv/dt)c > 5 V/µs BTA Family : NSULATNG VOLTAGE = 5V (RMS) (UL RECOGNZED : E173) DESCRPTON The BTA/BTB1 B/C triac family are high perfrmance glass passivated PNPN devices. These parts are suitables fr general purpse applicatins where high surge current capability is required. Applicatin such as phase cntrl and static switching n inductive r resistive lad. A1 A G TOAB (Plastic) ABSOLUTE RATNGS (limiting values) Symbl Parameter Value Unit T(RMS) TSM RMS n-state current (3 cnductin angle) Nn repetitive surge peak n-state current ( Tj initial = 5 C ) BTA Tc = 9 C 1 A BTB Tc = 95 C tp =.3 ms 15 A tp = 1 ms 1 t t value tp = 1 ms 7 As d/dt Critical rate f rise f n-state current Gate supply : G = 5mA dig/dt = 1A/µs Repetitive F = 5 Hz 1 A/µs Nn Repetitive 5 Tstg Tj Strage and perating junctin temperature range - t t + 15 C C Tl Maximum lead temperature fr sldering during 1 s at.5 mm frm case C Symbl Parameter BTA / BTB1-... B/C Unit 7 VDRM VRRM Repetitive peak ff-state vltage Tj = 15 C 7 V March /5

2 BTA1 B/C / BTB1 B/C THERMAL RESSTANCES Symbl Parameter Value Unit Rth (j-a) Junctin t ambient C/W Rth (j-c) DC Junctin t case fr DC BTA 3.3 C/W BTB.7 Rth (j-c) AC Junctin t case fr 3 cnductin angle ( F= 5 Hz) BTA.5 C/W BTB. GATE CHARACTERSTCS (maximum values) PG (AV) =1W PGM = 1W (tp = µs) GM =A(tp=µs) VGM = 1V (tp = µs). ELECTRCAL CHARACTERSTCS Symbl Test Cnditins Quadrant Suffix Unit B C GT VD=1V (DC) RL=33Ω Tj=5 C -- MAX 5 5 ma V MAX 1 5 VGT VD=1V (DC) RL=33Ω Tj=5 C ---V MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=11 C ---V MN. V tgt VD=VDRM G = 5mA d G /dt = 3A/µs Tj=5 C ---V TYP µs L G =1. GT Tj=5 C --V TYP ma 7 35 H * T = 5mA gate pen Tj=5 C MAX 5 5 ma V TM * TM = 17A tp= 3µs Tj=5 C MAX 1.5 V DRM RRM V DRM VRRM Rated Rated Tj=5 C MAX.1 ma Tj=11 C MAX.5 dv/dt * Linear slpe up t V D =7%V DRM gate pen Tj=11 C MN 5 1 V/µs (dv/dt)c * (d/dt)c = 5.3A/ms Tj=11 C MN 1 5 V/µs * Fr either plarity f electrde A vltage with reference t electrde A1. /5

3 ORDERNG NFORMATON BTA1 B/C / BTB1 B/C Package T(RMS) VDRM /VRRM Sensitivity Specificatin A V B C BTA 1 X X (nsulated) X X 7 X X X X BTB X X (Uninsulated) X X 7 X X X X Fig.1 : Maximum RMS pwer dissipatin versus RMS n-state current (F=5Hz). (Curves are cut ff by (d/dt)c limitatin) Fig. : Crrelatin between maximum RMS pwer dissipatin and maximum allwable temperatures (Tamb and Tcase) fr different thermal resistances heatsink + cntact (BTA). 1 1 O = 1 1 = 1 1 = 9 = =3 T(RMS) (A) Tcase ( C) -5 Rth = C/W C/W -9 C/W C/W Tamb ( C) Fig.3 : Crrelatin between maximum RMS pwer dissipatin and maximum allwable temperatures (T amb and Tcase) fr different thermal resistances heatsink + cntact (BTB). Fig. : RMS n-state current versus case temperature Tcase ( C) Rth = C/W C/W C/W C/W Tamb ( C) T(RMS) (A) 1 1 = 1 BTA BTB Tcase( C) /5

4 BTA1 B/C / BTB1 B/C Fig.5 : Relative variatin f thermal impedance versus pulse duratin. Fig. : Relative variatin f gate trigger current and hlding current versus junctin temperature. Zth/Rth 1 Zth(j-c).1 Zth(j-a) tp(s).1 1E-3 1E- 1E-1 1E+ 1E+1 1E+ 5E+ Fig.7 : Nn Repetitive surge peak n-state current versus number f cycles. Fig. : Nn repetitive surge peak n-state current fr a sinusidal pulse with width : t 1ms, and crrespnding value f t. Fig.9 : On-state characteristics (maximum values). /5

5 PACKAGE MECHANCAL DATA TOAB Plastic BTA1 B/C / BTB1 B/C P A O = N = G D F B C J H L M REF. DMENSONS Millimeters nches Min. Max. Min. Max. A B C D F.5.17 G H J L M N O P Cling methd : C Marking : type number Weight :.3 g Recmmended trque value :. m.n. Maximum trque value : 1 m.n. nfrmatin furnished is believed t be accurate and reliable. Hwever, SGS-THOMSON Micrelectrnics assumes n respnsability fr the cnsequences f use f such infrmatin nr fr any infringement f patents r ther rights f third parties which may result frm its use. N license is granted by implicatin r therwise under any patent r patent rights f SGS-THOMSON Micrelectrnics. Specificatins mentined in this publicatin are subject t change withut ntice. This publicatin supersedes and replaces all infrmatin previusly supplied. SGS-THOMSON Micrelectrnics prducts are nt authrized fr use as critical cmpnents in life supprt devices r systems withut express written apprval f SGS-THOMSON Micrelectrnics SGS-THOMSON Micrelectrnics - Printed in taly - All rights reserved. SGS-THOMSON Micrelectrnics GROUP OF COMPANES Australia - Brazil - France - Germany - Hng Kng - taly - Japan - Krea - Malaysia - Malta - Mrcc - The Netherlands - Singapre - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdm - U.S.A. 5/5

Z0410xE/F STANDARD TRIACS. FEATURES IT(RMS) =4A V DRM = 400V to 800V I GT 25mA

Z0410xE/F STANDARD TRIACS. FEATURES IT(RMS) =4A V DRM = 400V to 800V I GT 25mA ZxE/F STANDARD TRACS FEATURES =A V DRM = V t 8V GT ma A A A G A G DESCRPTON The ZxE/F series f triacs uses a high perfrmance TOP GLASS PNPN technlgy. These parts are intended fr general purpse switching