PINNING - SOT223 PIN CONFIGURATION SYMBOL

Transcription

1 BT34W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT34W applications requiring high BT34W 5F 6F 8F bidirectional transient and blocking BT34W 5G 6G 8G voltage capability and high thermal V DRM Repetitive peak offstate V cycling performance. Typical voltages applications include motor control, I T(RMS) RMS onstate current A industrial and domestic lighting, I TSM Nonrepetitive peak onstate A heating and static switching. current PINNING SOT3 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 4 main teral T main teral T 3 gate tab main teral 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DRM Repetitive peak offstate V voltages I T(RMS) RMS onstate current full sine wave; T sp 8 C A I TSM Nonrepetitive peak full sine wave; T j = 5 C prior to onstate current surge t = ms A I t I t for fusing t = 6.7 ms t = ms.5 A A s di T /dt Repetitive rate of rise of I TM =.5 A; I G =. A; onstate current after triggering di G /dt =. A/µs T+ G+ 5 A/µs T+ G 5 A/µs T G T G+ 5 A/µs A/µs I GM Peak gate current A V GM Peak gate voltage 5 V P GM Peak gate power 5 W P G(AV) Average gate power over any ms period.5 W T stg Storage temperature 4 5 C T j Operating junction 5 C temperature Although not recommended, offstate voltages up to 8V may be applied without damage, but the triac may switch to the onstate. The rate of rise of current should not exceed 3 A/µs. September 997 Rev.

2 BT34W series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th jsp Thermal resistance full or half cycle 5 K/W junction to solder point R th ja Thermal resistance pcb mounted; imum footprint 56 K/W junction to ambient pcb mounted; pad area as in fig:4 7 K/W STATIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT34W......F...G I GT Gate trigger current V D = V; I T =. A T+ G+ T+ G T G I L Latching current T G V D = V; I GT =. A T+ G+ 7 3 T+ G T G T G I H Holding current V D = V; I GT =. A V T Onstate voltage I T = A..5 V V GT Gate trigger voltage V D = V; I T =. A.7.5 V V D = 4 V; I T =. A;.5.4 V I D Offstate leakage current T j = 5 C V D = V DRM() ; T j = 5 C..5 DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT34W......F...G dv D /dt Critical rate of rise of V DM =67% V DRM() ; 5 5 V/µs offstate voltage T j = 5 C; exponential waveform; gate open circuit dv com /dt Critical rate of change of V = 4 V; T = 95 C; 5 V/µs commutating voltage DM j I T(RMS) = A; di com /dt =.8 A/ms; gate open circuit t gt Gate controlled turnon I TM =.5 A; µs time D DRM() G di G /dt = 5 A/µs; V = V ; I =. A; September 997 Rev.

3 Philips Semiconductors BT34W series Ptot / W.4 BT34W Tsp() / C 4 IT(RMS) / A. BT34W = C IT(RMS) / A Fig.. Maximum onstate dissipation, P tot, versus rms onstate current, I T(RMS), where α = conduction angle Tsp / C Fig.4. Maximum permissible rms current I T(RMS), versus solder point temperature T sp. ITSM / A BT34W IT ITSM IT(RMS) / A BT34W T time Tj initial = 5 C.5 di /dt limit T T G+ quadrant.5 us us ms ms ms T / s Fig.. Maximum permissible nonrepetitive peak onstate current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms onstate current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T sp 8 C. ITSM / A BT34W IT T I TSM time.6.4 VGT(Tj) VGT(5 C) BT36 8 Tj initial = 5 C Number of cycles at 5Hz Fig.3. Maximum permissible nonrepetitive peak onstate current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. September Rev.

4 BT34W series 3.5 IGT(Tj) IGT(5 C) BT36 T+ G+ T+ G T G T G+ IT / A Tj = 5 C Tj = 5 C.5 Vo =. V Rs =. Ohms BT34W typ Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j..5.5 VT / V Fig.. Typical and imum onstate characteristic. 3 IL(Tj) IL(5 C) TRIAC Zth jsp (K/W) BT34W.5 unidirectional.5 bidirectional. P D t p Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th jsp, versus pulse width t p. t 3.5 IH(Tj) IH(5C) TRIAC dvcom/dt (V/us) offstate dv/dt limit BT34...G SERIES BT34 SERIES BT34...F SERIES Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j. dicom/dt = A/ms 5 5 Fig.. Typical commutation dv/dt versus junction temperature, parameter commutation di T /dt. The triac should commutate when the dv/dt is below the value on the appropriate curve for precommutation di T /dt. September Rev.

5 BT34W series MOUNTING INSTRUCTIONS Dimensions in mm (3x) Fig.3. soldering pattern for surface mounting SOT3. PRINTED CIRCUIT BOARD Dimensions in mm Fig.4. PCB for thermal resistance and power rating for SOT3. PCB: FR4 epoxy glass (.6 mm thick), copper laate (35 µm thick). 7 5 September Rev.

6 BT34W series MECHANICAL DATA Dimensions in mm Net Mass:. g B. M A 4 A (4x) M B Fig.5. SOT3 surface mounting package. Notes. For further information, refer to Philips publication SC8 " SMD Footprint Design and Soldering Guidelines". Order code: Epoxy meets UL94 V at /8". September Rev.