T3035H-8I. 30 A V TO-220AB insulated H-series Snubberless Triac. Datasheet. Features. Applications. Description. TO-220AB insulated

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1 Datasheet 3 A - 8 V TO-22AB insulated H-series Snubberless Triac G A2 A1 Features 3 A high current Triac 8 V symmetrical blocking voltage 15 C maximum junction temperature T j Three triggering quadrants High noise immunity, static dv / dt Robust dynamic turn-off commutation (dl/dt)c ECOPACK 2 compliant component Comply with UL1557 insulation: 2.5 kv Reference file: E81734 A1 G A2 TO-22AB insulated Applications Home automation Smart AC plug Water heater, room heater and coffee machine AC Induction and Universal Motor control Inrush current limiter in AC DC rectifiers Lighting and automation I/O control General purpose AC line load control Product status link T335H-8I Product summary I T(RMS) 3 A V DRM /V RRM 8 V V DSM /V RSM 9 V I GT 35 ma Description Specifically designed to operate at 8 V and 15 C, the T335H-8I Triac provides an enhanced thermal management: this 3 A triac is the right choice for a compact drive of heavy AC loads and enables the heatsink size reduction. Based on the ST Snubberless high temperature technology, it offers higher specified turn off commutation and noise immunity levels up to the Tj max. The T335H-8I safely optimizes the control of the hardest universal motors, heaters and inductive loads for industrial control and home appliances. By using an internal ceramic pad, it provides a recognized voltage insulation, rated at 25 V RMS. Snubberless is a trademark of STMicroelectronics. DS Rev 1 - July 218 For further information contact your local STMicroelectronics sales office.

2 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) T c = 91 C 3 A I TSM Non repetitive surge peak on-state current (full cycle, T j initial = 25 C) t = 16.7 ms 283 t = 2 ms 27 A I 2 t I 2 t value for fusing t p = 1 ms 482 A 2 s dl/dt Critical rate of rise of on-state current, I G = 2 x I GT, tr 1 ns, f = 1 Hz T j = 25 C 1 A/µs V DRM /V RRM Repetitive peak off-state voltage 8 V V DSM /V RSM Non Repetitive peak off-state voltage t p = 1 ms, T j = 25 C 9 V I GM Peak gate current 4 A t p = 2 µs, T j = 15 C P GM Maximum gate power dissipation 5 W P G(AV) Average gate power dissipation T j = 15 C 1 W T stg Storage temperature range -4 to +15 C T j Operating junction temperature range -4 to +15 C T L Maximum lead temperature for soldering during 1 s 26 C V INS Insulation RMS voltage, 1 minute 2.5 kv Table 2. Electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test conditions Quadrants Value Unit I V D = 12 V, R L = 3 Ω I - II - III Min. 5 ma GT V D = 12 V, R L = 3 Ω I - II - III Max. 35 ma V GT V D = 12 V, R L = 3 Ω I - II - III Max. 1.3 V V GD V D = V DRM, R L = 3.3 kω T j = 15 C I - II - III Max..15 V I L I G = 1.2 x I GT I - III Max. 75 ma II Max. 9 ma I H (1) I T = 5 ma, gate open Max. 6 ma dv/dt (1) V D = 536 V, gate open T j = 15 C Min. 15 V/µs (dl/dt)c (1) Without snubber network T j = 15 C Min. 25 A/ms 1. For both polarities of A2 referenced to A1. DS Rev 1 page 2/11

3 Characteristics Table 3. Static characteristics Symbol Test conditions T j Value Unit V (1) TM I T = 42 A, t p = 38 µs 25 C Max V V (1) TO Threshold voltage 15 C Max..83 V R (1) D Dynamic resistance 15 C Max. 16 mω I DRM /I RRM V DRM = V RRM = 8 V 25 C 5 µa Max. 15 C 8.5 ma V DRM = V RRM = 4 V, peak voltage 15 C Max. 3.6 ma 1. For both polarities of A2 referenced to A1. Table 4. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC) Max. 1.6 C/W R th(j-a) Junction to ambient Typ. 6 C/W DS Rev 1 page 3/11

4 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current Figure 2. On-state RMS current versus case temperature P(W) 4 α = I T(RMS) (A) α = I T(RMS) (A) T c ( C) Figure 3. On-state RMS current versus ambient temperature (free air convection) Figure 4. Relative variation of thermal impedance versus pulse duration I T(RMS) (A) K = [Z th /R th ] E+ 3. α = 18 Zth(j-c) Zth(j-a) E T a ( C) E-2 t p (s) 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 DS Rev 1 page 4/11

5 Characteristics (curves) Figure 5. Relative variation of gate trigger voltage and current versus junction temperature (typical values) Figure 6. Relative variation of holding current and latching current versus junction temperature (typical values) 3. I GT,V GT [Tj] / I GT,V GT [Tj = 25 C] 1.5 I H,I L [Tj] / I H,I L [Tj = 25 C] I GT Q3 1. I L 1.5 I GT Q1-Q2 1. V GT Q1-Q2-Q3.5 I H.5. T j ( C) T j ( C) Figure 7. Surge peak on-state current versus number of cycles Figure 8. On-state characteristics (maximum values) 3 25 I TSM (A) t=2ms 1 I TM (A) Tj max. Vto =.83 V Rd = 16 mω 2 Non repetitive Tj initial = 25 C One cycle 1 15 Tj = 15 C 1 1 Tj = 25 C 5 Repetitive Tc = 91 C Number of cycles V TM (V) Figure 9. Relative variation of static dv/dt immunity versus junction temperature Figure 1. Relative variation of critical rate of decrease of main current versus junction temperature dv/dt [Tj] / dv/dt [Tj = 15 C] 4 V D = V R = 536 V Tj( C) (dl/dt)c [Tj] / (dl/dt)c [Tj = 15 C] Tj( C) DS Rev 1 page 5/11

6 Characteristics (curves) Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage Figure 12. Recommended maximum case-to-ambient thermal resistance versus ambient temperature for different peak off-state voltages 1.E+ I DRM /IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,8 V] 7 6 Rth(c-a) ( C/W) (for heatsink sizing to avoid thermal runaway) Junction-to-ambiant thermal resistance : Typical 6 C/W (without heatsink) 1.E-1 V DRM = V RRM = 8 V 5 V DRM=V RRM =4 V V DRM=V RRM =2 V 1.E-2 1.E-3 V DRM = V RRM = 6 V 4 3 V DRM=V RRM = 6 V 2 V DRM=V RRM = 8 V 1.E-4 1 With 15 C/W heatsink 1.E-5 Tj( C) Tj ( C) DS Rev 1 page 6/11

7 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 2.1 TO-22AB insulated package information Epoxy resin is halogen free and meets UL94 flammability standard, level V Lead-free plating package leads Recommended torque:.4 to.6 N m Figure 13. TO-22AB insulated package outline DS Rev 1 page 7/11

8 TO-22AB insulated package information Table 5. TO-22AB insulated package mechanical data Dimensions Ref. Millimeters Inches (1) Min. Typ. Max. Min. Typ. Max. A a a B b b C c c e F I L I I I M Inch dimensions are for reference only. DS Rev 1 page 8/11

9 Ordering information 3 Ordering information Figure 14. Ordering information scheme Series T = Triac RMS current 3 = 3 A Gate triggering current 35 = 35 ma High temperature H = High noise immunity and robust commutations Voltage 8 = 8 V Package I = TO-22-AB 2.5 kv UL insulated Packing Blank = Tube T 3 35 H - 8 I Table 6. Ordering information Marking Package Weight Base qty. Delivery mode T335H-8I TO-22AB Ins. 2.3 g 5 Tube DS Rev 1 page 9/11

10 Revision history Table 7. Document revision history Date Version Changes 27-Jul Initial release. DS Rev 1 page 1/11

11 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 1 page 11/11

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