LCP1511D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION. Application Specific Discretes A.S.D. TIP GND GND RING

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1 Application Specific Discretes A.S.D. LCP111D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES DUAL PROGRAMMABLE TRANSIENT SUP- PRESSOR. WIDE NEGATIVE FI VOLTAGE RANGE : VMGL = -0V max. LOW DYNAMIC SWITCHING VOLTAGES : VFP and VDGL. LOW GATE TRIGGE CURRENT : IGT = ma max. PEAK PULSE CURRENT : I PP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 10mA. DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Positive overloads are clipped with 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -V BAT through the gate. This component presents a very low gate triggering current (IGT) in orderto reducethe current consumption on printed circuit board during the firing phase. A particular attention has beengiven to the internal wire bonding. The 4-point configuration ensures reliable protection, eliminating the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : 10/00µs 1kV /310µs 2A VDE 0433 : 10/00µs 2kV /310µs 3A (*) VDE 0 : 1.2/0µs 1.kV 1/20µs 40A I3124 : 0./00µs 1kV 0.2/310µs 2A FCC part 6 : 2/10µs 2.kV 2/10µs 10A (*) BELLCORE TR-NWT : 2/10µs 2.kV 2/10µs 10A (*) (*) with series resistors or PTC. February 199 Ed: 3 SO SCHEMATIC DIAGRAM 1 GATE 2 NC TM: ASD is trademarks of SGS-THOMSON Microelectronics. 1/

2 LCP111D ABSOLUTE MAXIMUM RATINGS (Tamb = 2 C) Symbol Parameter Value Unit IPP I TSM Peak pulse current (see note 1) Non repetitivesurge peak on-state current (F = 0Hz) 10/1000µs /310µs 2/10µs t p = 10ms t=1s IGSM Maximum gate current (half sine wave tp = 10ms) 2 A VMLG V MGL T stg Tj Maximum voltage LINE / GROUND Maximum voltage GATE / LINE Storage temperature range Maximum junction temperature to TL Maximum lead temperature for soldering during 10s 260 C A A V C Note 1 : Pulse waveform : 10/1000µs tr=10µs tp=1000µs /310µs tr=µs tp=310µs 2/10µs tr=2µs tp=10µs 100 %I PP 0 0 tr tp t THERMAL RESISTANCE Symbol Parameter Value Unit Rth (j-a) Junction to ambient 10 C/W ELECTRICAL CHARACTERISTICS (T amb =2 C) Symbol I GT Parameter Gate triggering current I F I IH Holding current IRM Reverse leakage current LINE/ IRG Reverse leakage current GATE/LINE VRM V F VGT VFP Reverse voltage LINE/ Forward drop voltage LINE/ Gate triggering voltage Peak forward voltage LINE/ V GATE V RM V F IRM I H V LG VDGL Dynamic switching voltage GATE/LINE VGATE GATE/ voltage V LG LINE/ voltage C Off-state capacitance LINE/ I PP 2/

3 LCP111D 1 - PARAMETERS RELATED TO THE DIODE LINE/ (Tamb = 2 C) Symbol Test conditions Maximum Unit V F I F =A t p =00µs 3 V VFP 10/00µs 1.kV Rp=10Ω 1.2/0µs 1.kV Rp=10Ω (see note 1) 2/10µs 2.kV R p =62Ω Note 1 : See test circuit 2 for VFP; Rpis the protection resistor located on the line card. 12 V 2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 2 C) Symbol Test conditions Min. Max. Unit IGT V/LINE = -4V 0.2 ma I H V GATE =-4V (see note 2) 10 ma VGT at IGT 2. V IRG Tc=2 C VRG =-V Tc=0 C VRG =-V VDGL VGATE= -4V (see note 3) 10/00µs 1.kV Rp=10Ω IPP=30A 1.2/0µs 1.kV Rp=10Ω IPP=30A 2/10µs 2.kV Rp=62Ω IPP=3A Note 2 : See the functional holding current (I H) test circuit 2. Note 3 : See test circuit 1 for V DGL. The oscillations with a time duration lower than 0ns are not taken into account µa V 3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 2 C) Symbol Test conditions Maximum Unit I RM T c =2 C V GATE/LINE = -1V V RM =-V Tc=0 C VGATE/LINE = -1V VRM =-V C VR =-3V F=1MHz V R =-4V F=1MHz µa pf APPLICATION NOTE GATE 1 2 IN OUT In order to take advantageof the 4 point structure of the LCP, the and lines go across the device. In such case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. NC IN OUT 3/

4 LCP111D FUNCTIONAL HOLDING CURRENT (I H ) TEST CIRCUIT 1 : GO-NO GO TEST R V BAT - = 4V D.U.T. P Surge generator This is a GO-NO GOtest which allows to confirm the holding current (IH) level in a functionaltest circuit. TEST PROCEDURE : - Adjust the current level at the I H value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : IPP = 10A, 10/1000µs. - The D.U.T. will come back to the off-statewithin a duration of 0ms max. TEST CIRCUIT 2 FOR V FP AND V DGL PARAMETERS (V is defined in unload condition) P L R 2 R4 R3 V P C1 R 1 C2 Pulse (µs) V p C 1 C 2 L R 1 R 2 R 3 R 4 I PP R p tr tp (V) (µf) (nf) (µh) (Ω) (Ω) (Ω) (Ω) (A) (Ω) /

5 FUNCTIONAL DESCRIPTION LINE A D1 P1 P2 D2 LINE B -VBAT C LINE A PROTECTION : For positive surges versus, the diode D1 will conduct. For negative surges versus, the protection device P1 will trigger at a voltage fixed by the -VBAT reference. LINE B PROTECTION : LCP111D For surges on line B, the operating mode is the same, D2 or P2 is activated. It is recommended to add a capacitor (C=220nF) close to the gate of the LCP, in order to speed up the triggering. Surge peak current versus overload duration. I TSM(A) 10 9 F=0H z Tj initial=2 C t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 /

6 LCP111D APPLICATION CIRCUIT : typical SLIC protection concept GENERATOR -V BAT LINE A PTC T E S T R E L A Y S THBTxxxD RELAY 220 nf SLIC LINE B PTC LCP111D ORDER CODE LINE CARD PROTECTION LCP D RL IH =10 ma VERSION PACKAGE 1 : SO RL : tape and reel : tube DYNAMIC MARKING Package Type Marking SO LCP111D CP11D 6/

7 LCP111D PACKAGE MECHANICAL DATA SO Plastic DIMENSIONS REF. Millimetres Inches Min. Typ. Max. Min. Typ. Max. A a a b b C c1 4 (typ) D E e e F L M S (max) Weight = 0.0 g. Packaging: Product supplied in antistatictubes or tape and reel. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 199 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy- Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. /

LCP1511D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION. Application Specific Discretes A.S.D. TIP TIP GATE GND GND RING FEATURES SO-8

LCP1511D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION. Application Specific Discretes A.S.D. TIP TIP GATE GND GND RING FEATURES SO-8 Application Specific Discretes A.S.D. LCP111D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES n DUAL PROGRAMMABLE TRANSIENT SUP- PRESSOR. n WIDE NEGATIVE FI VOLTAGE RANGE : V MGL