SMP80MC. Trisil for telecom equipment protection. Features. Description. Applications. Benefits. Complies with the following standards
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1 SMP8MC Trisil for telecom equipment protection Features Bidirectional crowbar protection Voltage: range from 12 V to 32 V Low V BO / V R ratio Micro capacitance equal to 12 5 V Low leakage current: I R = 2 µa max Holding current: I H = 15 ma min. Repetitive peak pulse current: I PP = 8 A (1/1 µs) Benefits Trisils are not subject to ageing and provide a fail safe mode in short circuit for better protection. Helps equipment meet main standards such as UL695, IEC 95 / CSA C22.2 and UL1459. Epoxy meets UL94, V. Package is JEDEC registered (DO-214AA). Complies with the following standards GR-189 Core ITU-T-K2/K21 IEC TIA/EIA IS-968 UL497B recognized, UL file E Description SMB (JEDEC DO-214AA) The SMP8MC is a series of micro capacitance transient surge arrestors designed for the protection of high debit rate communication equipment. Its micro capacitance avoids any distortion of the signal and is compatible with digital transmission like ADSL2 and ADSL2+. Applications Any sensitive equipment requiring protection against lightning strikes and power crossing: Terminals (phone, fax, modem...) and central office equipment TM: Trisil is a trademark of STMicroelectronics. February 212 Doc ID 972 Rev 5 1/
2 Characteristics SMP8MC 1 Characteristics Table 1. Standard In compliance with the following standards Peak surge voltage (V) Waveform voltage Required peak current (A) Current waveform Minimum serial resistor to meet standard (Ω) GR-189 Core First level /1 µs 1/1 µs 5 1 2/1 µs 1/1 µs GR-189 Core Second level GR-189 Core Intra-building 5 2/1 µs 5 2/1 µs /1 µs 1 2/1 µs ITU-T-K2/K /7 µs /31 µs 1 ITU-T-K2 (IEC61-4-2) /6 ns ESD contact discharge ESD air discharge IEC /7 µs 1.2/5 µs 1 1 5/31 µs 8/2 µs TIA/EIA IS-968, lightning surge type A /16 µs 1/56 µs 2 1 1/16 µs 1/56 µs 2.5 TIA/EIA IS-968, lightning surge type B 1 9/72 µs 25 5/32 µs 2/11 Doc ID 972 Rev 5
3 SMP8MC Characteristics Table 2. Absolute ratings (T amb = 25 C) Symbol Parameter Conditions Value Unit I PP Repetitive peak pulse current (see Figure 2) I FS Fail-safe mode: maximum current (1) I TSM I 2 t Non repetitive surge peak on-state current (sinusoidal) I 2 t value for fusing 1. In fail safe mode the device acts as a short circuit. 1/1 µs 8/2 µs 1/56 µs 5/31 µs 1/16 µs 1/2 µs 2/1 µs /2 µs 5 ka t =.2 s t = 1 s t = 2 s t = 15 mn t = 16.6 ms t = 2 ms T stg Storage temperature range -55 to 15 T j Operating junction temperature range -4 to 15 T L Maximum lead temperature for soldering during 1 s. 26 C Table 3. Thermal resistances Symbol Parameter Value Unit R th(j-a) Junction to ambient (with recommended footprint) 1 C/W R th(j-l) Junction to leads 2 C/W A A A 2 s C Figure 1. Electrical characteristics - definitions (T amb = 25 C) Symbol Parameter VRM Stand-off voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VR Continuous reverse voltage IR Leakage current at VR C Capacitance I PP I BO IH I RM I V RM V R V V BO Doc ID 972 Rev 5 3/11
4 Characteristics SMP8MC Table 4. Types Electrical characteristics - values (T amb = 25 C) I V RM I V R Dynamic V BO (1) Static V I BO (2) I H (3) max. max. max. max. max. min. typ. typ. C (4) µa V µa V V V ma ma pf pf C (5) SMP8MC SMP8MC SMP8MC SMP8MC SMP8MC SMP8MC SMP8MC See Figure 1: Test circuit 1 for dynamic I BO and V BO parameters 2. See Figure 11: Test circuit 2 for I BO and V BO parameters 3. See Figure 12: Test circuit 3 for dynamic I H parameter 4. V R = 5 V bias, V RMS = 1 V, F= 1 MHz 5. V R = 2 V bias, V RMS = 1 V, F = 1 MHz 4/11 Doc ID 972 Rev 5
5 SMP8MC Characteristics Figure 2. Pulse waveform Figure 3. Non repetitive surge peak on-state current versus overload duration 1 %I PP Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) I TSM(A) F=5Hz Tj initial = 25 C tr tp t 5 t(s) 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 4. On-state voltage versus on-state current (typical values) Figure 5. Relative variation of holding current versus junction temperature 1 I T(A) 2. I H[Tj] / I H[Tj=25 C] Tj=25 C V (V) T Tj( C) Figure 6. Relative variation of breakover voltage versus junction temperature Figure 7. Relative variation of leakage current versus junction temperature (typical values) V BO[Tj] / V BO[Tj=25 C] Tj( C) E+3 1.E+2 1.E+1 1.E+ I R[Tj] / I R[Tj=25 C] V R=243V Tj( C) Doc ID 972 Rev 5 5/11
6 Characteristics SMP8MC Figure Z th(j-a) /Rth(j-a) Variation of thermal impedance junction to ambient versus pulse duration Printed circuit board - FR4, copper thickness = 35µm, recommended pad layout tp(s) 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure C [V R] / C [V R=2V] Relative variation of junction capacitance versus reverse voltage applied (typical values) V (V) R F =1MHz V OSC = 1VRMS Tj = 25 C Figure 1. Test circuit 1 for dynamic I BO and V BO parameters 1 V / µs, di/dt < 1 A / µs, Ipp = 8A 2 Ω 45 Ω 83 Ω 46 µh U 1 µf 66 Ω 47 Ω.36 nf KeyTek 'System 2' generator with PN246I module 1 kv / µs, di/dt < 1 A / µs, Ipp = 1 A 26 µh 25 Ω 47 Ω 46 µh U 6 µf 12 Ω KeyTek 'System 2' generator with PN246I module 6/11 Doc ID 972 Rev 5
7 SMP8MC Characteristics Figure 11. Test circuit 2 for I BO and V BO parameters K ton = 2ms R1 = 14Ω R2 = 24Ω 22V 5Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 2ms): for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open VOUT selection: Device with V BO < 2V V OUT = 25 V RMS, R1 = 14Ω Device with VBO 2V V OUT = 48 V RMS, R2 = 24Ω Figure 12. Test circuit 3 for dynamic I H parameter R Surge generator V BAT = - 48 V D.U.T This is a GO-NOGO test which allows to confirm the holding current (I H) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current I PP = 1A, 1/1µs. 3/ The D.U.T. will come back off-state within 5ms maximum. Doc ID 972 Rev 5 7/11
8 Ordering Information Scheme SMP8MC 2 Ordering Information Scheme Figure 13. Ordering information scheme SMP 8 MC - xxx Trisil surface mount Repetitive peak pulse current 8 = 8 A Capacitance MC = Micro capacitance Voltage 12 = 12 V 14 = 14 V 16 = 16 V 2 = 2 V 23 = 23 V 27 = 27 V 32 = 32 V 8/11 Doc ID 972 Rev 5
9 SMP8MC Package information 3 Package information Epoxy meets UL94, V Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 5. SMB dimensions Dimensions E1 Ref. Millimeters Inches Min. Max. Min. Max. D A A b E c A1 E C A2 E L b D L Figure 14. Footprint dimensions in mm (inches) Figure 15. Marking layout (1) (.64) (.12) 1.62 (.64) Cathode bar ( unidirectional devices only ) 5.84 (.23) 2.18 (.86) e x x x z y w w e: ECOPACK compliance XXX: Marking Z: Manufacturing location Y: Year WW: week 1. Marking layout can vary according to assembly location. Doc ID 972 Rev 5 9/11
10 Ordering information SMP8MC 4 Ordering information Table 6. Ordering information Part Number Marking Package Weight Base qty Delivery mode SMP8MC-12 SMP8MC-14 SMP8MC-16 SMP8MC-2 SMP8MC-23 SMP8MC-27 SMP8MC-32 TP12 TP14 TP16 TP2 TP23 TP27 TP32 SMB 98 mg 25 Tape and reel 5 Revision history Table 7. Document revision history Date Revision Changes September-21 1 First issue. 11-May-25 2 New types introduction. 2-Jun-25 3 Qualification of new types 18-Jan-27 4 Added product SMP8MC-32 9-Feb Added UL statement in Complies with the following standards 1/11 Doc ID 972 Rev 5
11 SMP8MC Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 212 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America Doc ID 972 Rev 5 11/11
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