Symbol Parameter Value Unit IT(RMS) RMS on-state current 50 A IT(AV) Average on-state current Single phase circuit, 180 conduction angle per device

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1 DIDE / THYRISTR MDULE. V DRM =V RRM UP T 1200 V FEATURES. I T(AV) =25A..HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VLTAGE 2500 V (RMS) DESCRIPTIN The MDS35 family are cnstitued f ne rectifier dide and general purpse SCR. Suited fr pwer supplies up t 400 Hz n resistive r inductive lad. The small vlume (7cm 3 ) and weight (29g) f the ISTP package are well adapted t new generatin f medium size mdule market applicatins. PIN CNNECTINS G K A Screw versin ISTP TM (Plastic) I 1 : Thyristr Gate (G) 2 : Thyristr Cathde (K) 3 : Thyristr Ande/Dide Cathde (I) 4 : Dide Ande(A) ABSLUTE RATINGS (limiting values) Symbl Parameter Value Unit IT(RMS) RMS n-state current 50 A IT(AV) Average n-state current Single phase circuit, 180 cnductin angle per device Tc = 85 C 25 A ITSM Nn repetitive surge peak n-state current tp = 8.3ms 420 A IFSM ( Tj initial = 25 C ) tp = 10ms 400 I2t I2t value fr fusing tp = 10ms 800 A2s di/dt Critical rate f rise f n-state current 100 A/µs Gate supply : IG = 800mA dig/dt = 1A/µs T stg Tj Strage temperature range perating junctin temperature range C Symbl Parameter MDS35 Unit VDRM VRRM Repetitive peak ff-state vltage Tj = 125 C V TM: ISTP is a trademak f SGS-THMSN Micrelectrnics April /7

2 THERMAL RESISTANCES Symbl Parameter Value Unit Rth (j-c) DC Junctin t case fr DC 1 C/W Rth (c-h) Cntact (case t heatsink) (4) 0.05 C/W (4) With cntact grease utilisatin GATE CHARACTERISTICS (maximum values) PGM =50W(tp=20µs) PG (AV)= 1W IFGM = 4 A (tp = 20 µs) VRGM = 5V. ELECTRICAL CHARACTERISTICS (SCR) Symbl Test Cnditins Value Unit IGT VD=12V (DC) RL=33Ω Tj=25 C MAX 50 ma VGT VD=12V (DC) RL=33Ω Tj=25 C MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=125 C MIN 0.2 V tgt VD=VDRM IG = 500mA di G /dt = 3A/µs Tj=25 C TYP 2 µs I L I G =1.2 I GT Tj=25 C TYP 60 ma MAX 120 I H I T = 0.5A gate pen Tj=25 C TYP 40 ma MAX 80 V TM I TM = 80A tp= 380µs Tj=25 C MAX 1.7 V I DRM IRRM V DRM VRRM Rated Rated Tj=25 C MAX 0.05 ma Tj=125 C MAX 10 tq I T = 80A V R =75V V D =67%V DRM di/dt=30a/µs dv/dt=20v/µs Gate pen Tj=125 C TYP 100 µs dv/dt * Linear slpe up t VD=67%VDRM gate pen Tj=125 C MIN 500 V/µs * Fr higher guaranteed values, please cnsult us. ELECTRICAL CHARACTERISTICS (DIDE) Symbl Test Cnditins Value Unit VF IF=80A Tj=25 C 1.7 V IR VR=VRRM Tj=125 C 10 ma Tj=25 C 50 µa 2/7

3 Fig. 1 : Maximun Average Pwer dissipatin versus average n-state current. (Sinusidal wavefrm : Thyristr r Dide) MDS35 Fig. 2 : Crrelatin between maximum average pwer dissipatin and maximum allwable temperature (Tamb) fr different thermal resistances heatsink + cntact. (Sinusidal wavefrm : Thyristr r Dide) P(av)(W) P(av)(W) =180 =60 =90 Rth(c-a)=0.75 C/W Rth(c-a)=.50 C/W =30 =180 Rth(c- a)=1.00c/m Rth(c.a)=0 C/W =120 Rth(c-a)=1.25 C/W IT,IF(av)(A) Tamb( C) Fig. 3 : Maximum average pwer dissipatin versus average n-state current. (Rectangular wavefrm : Thyristr r Dide) Fig.4 : Crrelatin between maximum average pwer dissipatin and maximum allwable temperature (Tamb) fr different thermal resistances heatsink + cntact. (Rectangular wavefrm : Thyristr r Dide) P(av)(W) =60 =90 =120 =180 =30 DC I T,IF(av)(A) Fig.5 : Maximum ttal pwer dissipatin versus utput current n resistive r inductive lad. (Single phase bridge rectifier : 2 packages MDS35) Fig. 6 : Crrelatin between maximum ttal average pwer dissipatin and maximum ambiant allwable temperature fr different thermal resistances heatsink + cntact. (Single phase bridge rectifier : 2 packages : MDS35) Ptt.(W) 160 =180 RESISTIVE LAD INDU CTIVE LAD Rth(c.a)=0 C/W Rth(c-a)=.25 C/W Rth(c-a)=0.5 C/W Rth(c-a)=1.0C/W 60 Iutput(A) 40 Rth(c-a)=.75C/W 20 Tamb( C) /7

4 Fig. 7 : Maximun ttal pwer dissipatin versus utput current. (Three phase bridge rectifier : 3 packages : MDS35) Ptt.(W) 300 Fig.8 : Crrelatin between maximum average pwer dissipatin and maximum allwable temperature (Tamb) fr different thermal resistances heatsink + cntact. (Three phase bridge rectifier : 3 packages : MDS35) Ptt.(W) =120 Rth(c.a)=0 C/W Rth(c-a)=.25 C/W Rth(c-a)=0.5 C/W Rth(c-a)=1.0 C/W Rth(c-a)=0.75 C/W 50 Iutput(A) Fig. 9 : Average n-state current versus case temperature. (Sinusidal wavefrm : Thyristr r Dide) I T,IF(av)(A) Fig. 10 : Average n-state current versus case temperature. (Rectangular wavefrm : Thyristr r Dide) IT,IF(av)(A) Tamb( C) =180 D.C. =120 =90 =60 =180 =120 =30 Tcase(C) =90 =60 =30 Tcase( c) Fig. 11: Relative variatin f thermal transient impedance junctin t case versus pulse duratin. Fig.12 : Relative variatin f gate trigger and hlding current versus junctin temperature. Igt;Ih [Tj] / Igt;Ih [Tj=25 C] Igt Ih tp(s) Tj( C) 4/7

5 Fig.13 : Nn repetitive surge peak n-state current fr a sinusidal pulse with width : tp 10 ms and crrespnding value f I 2 t. (Thyristr r dide) I TSM;IFSM(A);I2t(A2s) Tj initial = 25 C ITSM;IFSM(A) Tj initial = 25 C MDS35 Fig. 14 : Nn repetitive surge peak n-state current versus number f cycles. (Thyristr r Dide) 2 I t ITSM;IFSM tp(ms) Number f cycles 2 5 Fig. 15 : n-state characteristics. (Maximum values)(thyristr r Dide) VTM,VFM(V) Tj=125C: Vt=0.85V Rt=11m Tj initial = 25 C Tj initial = 125 C ITM,IFM(A) 5/7

6 PACKAGE MECHANICAL DATA ISTP plastic : SCREW VERSIN M A G J / B I / I / H D E F C K L P screw H M4 REF. DIMENSINS Millimeters Inches Min. Max. Min. Max. A B C D E F G H I J K L M P Cling methd : C Marking : Type number Weight : 28 g. (withut screws) Electrical islatin : 2500V(RMS) Capacitance : < 45 pf Inductance : < 5 nh - Recmmended trque value : 1.3 N.m (Max 1.5 N.m) fr the 6 x M4 screws. (2 x M4 screws recmmended fr munting the package n the heatsink and the 4 screws given with the screw versin). - The screws supplied with the package are adapted fr munting n a bard (r thers types f terminals) with a thickness f 0.6 mm min and 2.2 mm max. 6/7

7 Infrmatin furnished is believed t be accurate and reliable. Hwever, SGS-THMSN Micrelectrnics assumes n respnsability fr the cnsequences f use f such infrmatin nr fr any infringement f patents r ther rights f third parties which may result frm its use. N license is granted by implicatin r therwise under any patent r patent rights f SGS-THMSN Micrelectrnics. Specificatins mentined in this publicatin are subject t change withut ntice. This publicatin supersedes and replaces all infrmatin previusly supplied. SGS-THMSN Micrelectrnics prducts are nt authrized fr use as critical cmpnents in life supprt devices r systems withut express written apprval f SGS-THMSN Micrelectrnics SGS-THMSN Micrelectrnics - Printed in Italy - All rights reserved. SGS-THMSN Micrelectrnics GRUP F CMPANIES Australia - Brazil - France - Germany - Hng Kng - Italy - Japan - Krea - Malaysia - Malta - Mrcc - The Netherlands - Singapre - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdm - U.S.A. 7/7

Symbol Parameter Value Unit. BTA Tc = 90 C 12 A. BTB Tc = 95 C. Repetitive F = 50 Hz. Non Repetitive

Symbol Parameter Value Unit. BTA Tc = 90 C 12 A. BTB Tc = 95 C. Repetitive F = 50 Hz. Non Repetitive BTA1 B/C BTB1 B/C STANDARD TRACS FEATURES HGH SURGE CURRENT CAPABLTY. COMMUTATON : (dv/dt)c > 5 V/µs BTA Family : NSULATNG VOLTAGE = 5V (RMS) (UL RECOGNZED : E173) DESCRPTON The BTA/BTB1 B/C triac family