Symbol Parameter Value Unit I T(RMS) Repetitive F = 50 Hz Non Repetitive 100 T stg T j

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Randolf Doyle
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1 TW T3W SNUBBERLESS TRAC FEATURES TRMS =A V DRM =V RRM = V t 7V EXCELLENT SWTCHNG PERFORMANCES NSULATNG VOLTAGE = 5V(RMS) U.L. RECOGNZED : E873 DESCRPTON The T/3W triacs use high perfrmance glass passivated chip technlgy, hused in a fully mlded plastic SOWATTAB package. The SNUBBERLESS TM cncept ffers suppressin f R-C netwrk, and is suitable fr applicatins such as phase cntrl and static switch n inductive and resistive lads. A G A A A G SOWATTAB (Plastic) ABSOLUTE RATNGS (limiting values) Symbl Parameter Value Unit T(RMS) RMS n-state current (3 cnductin angle) Tc= C A TSM Nn repetitive surge peak n-state current (Tj initial = 5 C ) tp =.7 ms ( cycle, Hz) A tp = ms (/ cycle, 5 Hz) 75 t t Value (half-cycle, 5 Hz) tp = ms 8 A s d/dt Critical rate f rise f n-state current Gate supply : G = 5 ma dg /dt = A/µs. Repetitive F = 5 Hz A/µs Nn Repetitive T stg T j Strage temperature range Operating junctin temperature range - t t + 5 C Tl Maximum lead temperature fr sldering during s at.5 mm frm case C Symbl Parameter T / 3-xxxW Unit 7 VDRM V RRM Repetitive peak ff-state vltage Tj = 5 C 7 V April 995 /5

2 TW / 3W THERMAL RESSTANCES Symbl Parameter Value Unit Rth(j-a) Junctin t ambient 5 C/W Rth(j-c) Junctin t case fr A.C (3 cnductin angle) 3. C/W GATE CHARACTERSTCS (maximum values) P G (AV) =W P GM =W(tp=µs) GM =A(tp=µs) ELECTRCAL CHARACTERSTCS Symbl Test Cnditins Quadrant T T3 Unit GT V D =V (DC) R L =33Ω Tj= 5 C -- MAX 3 ma VGT VD=V (DC) RL=33Ω Tj= 5 C -- MAX.5 V V GD V D =V DRM R L =3.3kΩ Tj= 5 C -- MN. V tgt V D =V DRM G = 5mA dl G /dt= 3Aµs Tj= 5 C -- TYP µs H * T = ma Gate pen Tj= 5 C MAX 35 5 VTM * TM= 8.5A tp= 38µs Tj= 5 C MAX.5 V DRM RRM dv/dt * VDRM rated VRRM rated Linear slpe up t V D =7%V DRM Gate pen Tj= 5 C MAX µa Tj= 5 C MAX ma Tj= 5 C MN 3 V/µs (dv/dt)c * (d/dt)c = 3.3 A/ms (see nte) Tj= 5 C MN V/µs * Fr either plarity f electrde A vltage with reference t electrde A. Nte : n usual applicatins where (d/dt)c is belw 3.3 A/ms, the (dv/dt)c is always lwer than V/µs, and, therefre, it is unnecessary t use a snuber R-C netwrk accrss TW / T3W triacs. /5

3 TW / 3W Fig. : Maximum pwer dissipatin versus RMS n-state current. Fig. : Crrelatin between maximum pwer dissipatin and maximum allwable temperature (Tamb and Tcase) fr different thermal resistances heatsink + cntact. P(W) 8 = 3 8 O =8 = =9 = T(RMS) 3 5 Fig.3 : RMS n-state current versus case temperature. P(W) Tcase ( C) 8-95 Rth = C/W.5 C/W 5 C/W C/W Tamb ( C) Fig. : Thermal transient impedance junctin t case and junctin t ambient versus pulse duratin. T(RMS) 7 Zth/Rth 5 3 = 8.. Zth(j-c) Zth(j-a) Tcase( C) tp(s) E-3 E- E- E+ E+ E+ 5E+ Fig.5 : Relative variatin f gate trigger current and hlding current versus junctin temperature. Fig. : Nn repetitive surge peak n-state current versus number f cycles. gt[tj] gt[tj=5 C] gt.. h Tj( C) h[tj] h[tj=5 C] TSM Tj initial = 5 C Number f cycles 3/5

4 TW / 3W Fig.7 : Nn repetitive surge peak n-state current fr a sinusidal pulse with width : tp ms, and crrespnding value f t. Fig.8 : On-state characteristics (maximum values). TSM. t(a s) Tj initial = 5 C TSM TM Tj initial 5 C t Tj max Tj max Vt =.9V Rt =. tp(ms) V TM (V) /5

5 TW / 3W PACKAGE MECHANCAL DATA SOWATTAB DMENSONS REF. Millimeters nches Min. Max. Min. Max. A B B C D typ.3 typ E H J L M N N O P Cling methd : C Marking : Type number Weight :.g Recmmended trque value :.55 m.n. Maximum trque value :.7 m.n. nfrmatin furnished is believed t be accurate and reliable. Hwever, SGS-THOMSON Micrelectrnics assumes n respnsability fr the cnsequences f use f such infrmatin nr fr any infringement f patents r ther rights f third parties which may result frm its use. N license is granted by implicatin r therwise under any patent r patent rights f SGS-THOMSON Micrelectrnics. Specificatins mentined in this publicatin are subject t change withut ntice. This publicatin supersedes and replaces all infrmatin previusly supplied. SGS-THOMSON Micrelectrnics prducts are nt authrized fr use as critical cmpnents in life supprt devices r systems withut express written apprval f SGS-THOMSON Micrelectrnics. 995 SGS-THOMSON Micrelectrnics - Printed in taly - All rights reserved. SGS-THOMSON Micrelectrnics GROUP OF COMPANES Australia - Brazil - France - Germany - Hng Kng - taly - Japan - Krea - Malaysia - Malta - Mrcc - The Netherlands - Singapre - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdm - U.S.A. 5/5

Symbol Parameter Value Unit. BTA Tc = 90 C 12 A. BTB Tc = 95 C. Repetitive F = 50 Hz. Non Repetitive

Symbol Parameter Value Unit. BTA Tc = 90 C 12 A. BTB Tc = 95 C. Repetitive F = 50 Hz. Non Repetitive BTA1 B/C BTB1 B/C STANDARD TRACS FEATURES HGH SURGE CURRENT CAPABLTY. COMMUTATON : (dv/dt)c > 5 V/µs BTA Family : NSULATNG VOLTAGE = 5V (RMS) (UL RECOGNZED : E173) DESCRPTON The BTA/BTB1 B/C triac family