UNITED MICRO DEVICE INC.
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1 Series 12 TRIs MIN TURS Symbol Value Unit I T(RMS) 12 V RM /V RRM V TO TO-220 Insulated Non-Insulated SRIPTION: With high ability to withstand the shock loading of large current, series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. rom all three terminals to external heatsink, provides a rated insulation voltage of 2500 VRMS, and provides a rated insulation voltage of 2000 VRMS. from all three terminals to external heatsink T2(2) TO TO TO-220 Insulated 1 23 TO-262 (3) T1(1) SOLUT MXIMUM RTINS Parameter Symbol Value Unit Storage junction temperature range T stg Operating junction temperature range T j Repetitive peak off-state voltage (T j =25 ) V RM V Repetitive peak reverse voltage (T j =25 ) V RRM V Non repetitive surge peak Off-state voltage V SM V RM +100 V Non repetitive peak reverse voltage V RSM V RRM +100 V RMS on-state current TO-220(Ins) (T=90 ) TO-220(Non-Ins)/ TO-220(T=105 ) TO-220(Ins) (T=79 ) TO-263/TO-262 (T =115 ) Non repetitive surge peak on-state current (full cycle, =50z) I T(RMS) 12 I TSM 120 Rev 28/01/19 1
2 Series 12 TRIs I 2 t value for fusing (tp=10ms) I 2 t 78 2 s ritical rate of rise of on-state current (I =2 IT) Ⅰ-Ⅱ-Ⅲ di/dt 50 /μs Peak gate current IM 4 verage gate power dissipation P(V) 1 W Peak gate power PM 5 W LTRIL RTRISTIS (T j =25 unless otherwise specified) 3 Quadrants Value Symbol Test ondition Quadrant S T Unit I T V =12V R L =33Ω Ⅰ-Ⅱ-Ⅲ MX m V T Ⅰ-Ⅱ-Ⅲ MX 1.3 V V V =V RM T j =125 R L =3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ I L I =1.2I T MX Ⅱ I I T =100m MX m dv/dt V =2/3V RM ate Open T j =125 MIN V/μs m 4 Quadrants Symbol Test ondition Quadrant W Value W Unit I T V =12V R L =33Ω Ⅰ-Ⅱ-Ⅲ MX Ⅳ m V T LL MX 1.3 V V V =V RM T j =125 R L =3.3KΩ LL MIN 0.2 V Ⅰ-Ⅲ-Ⅳ I L I =1.2I T MX Ⅱ I I T =100m MX m dv/dt V =2/3V RM ate Open T j =125 MIN V/μs Rev 28/01/19 2 m
3 Series 12 TRIs STTI RTRISTIS Symbol Parameter Value(MX) Unit V TM I TM =17 tp=380μs T j = V I RM V =V RM V R =V RRM T j =25 5 μ I RRM T j =125 1 m TRML RSISTNS Symbol Parameter Value Unit TO-220(Ins) 2.3 Rth(j-c) junction to case() TO-262/ TO-220(Non-Ins)/ TO-220/TO /W TO-220(Ins) 2.5 ORRIN INORMTION Triacs T IT(RMS):12 :TO-262 :TO-220(Ins) :TO-220(Ins) :TO-220(Non-Ins) :TO-220 :TO :VRM /VRRM 600V 800:VRM /VRRM 800V 1200:VRM /VRRM 1200V :IT1-3 50m :IT1-3 35m S:IT1-3 10m T:IT1-3 5m W:IT1-3 50m IT4 70m W:IT1-3 25m IT4 50m Rev 28/01/19 3
4 Series 12 TRIs PK MNIL T imensions ΦMax 3.8mm Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max TO-220 Ins imensions Φ Max 3.8mm Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max JI TO-220 Non-Ins Rev 28/01/19 4
5 Series 12 TRIs PK MNIL T imensions Φ Max 3.6mm Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max TO-220 Φ imensions Ref. Millimeters Inches Φ Max 3.5mm Min. Typ. Max. Min. Typ. Max TO-220 Ins Rev 28/01/19 5
6 Series 12 TRIs PK MNIL T Rev 28/01/19 6
7 Series 12 TRIs PK MNIL T I.1 Maximum power dissipation versus RMS on-state current P(w) 18 I.2: RMS on-state current versus case temperature 18 IT(RMS) () α= TO-220(Ins) TO-220/ TO-220(Non-Ins) TO-262/ TO-263 TO-220(Ins) 0 IT(RMS) () Tc ( 0 ) I.3: Surge peak on-state current versus number of cycles 120 ITSM () t=20ms One cycle 100 I.4: On-state characteristics (maximum values) ITM () Tj=Tjmax Number of cycles Tj=25 VTM (V) I.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and 2 corresponging value of I t (di/dt( - - ) < 50/μs) 2 2 ITSM (), I t ( s) I.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature IT,I,IL(Tj) /IT,I,IL(Tj=25 ) 100 di/dt( - - ) ITSM 2 I t IT I&IL tp(ms) Tj ( ) Rev 28/01/19 7
8 Series 12 TRIs Please Read arefully Information in this document is provided solely in connection with UM products. UM reserves the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll UM products are sold pursuant to UM s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the UM products and services described herein, and UM assumes no liability whatsoever relating to the choice, selection or use of the UM products and services described herein. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by UM for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. Unless otherwise set forth in UM s Terms and onditions of sale UM disclaims any express or implied warranty with respect to the use and/or sale of UM products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. Unless expressly approved in writing by an authorized UM representative, UM products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. Resale of UM products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by UM for the UM product or service described herein and shall not create or extend in any manner whatsoever, any liability of UM United Micro evice Inc ll rights reserved Rev 28/01/19 8
JIEJIE MICROELECTRONICS CO., Ltd
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