T12M5T-B SERIES TRIACS 12 AMPERES RMS 600 VOLTS. Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES TO-220AB MECHANICAL DATA
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1 LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 2 AMPERES RMS 600 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and other Blocking Voltage to 600 Volts High Surge Current Capability - 90 Amperes Glass Passivated Junctions for Reliability and Uniformity Maximum Values of IGT, VGT and IH Specified for Ease of Design Operational in Three Quadrants: Q, Q2, and Q3 Pb Free Package MECHANICAL DATA Case: Molded plastic Weight: 0.07 ounces, 2.0 grams C K O I H B PIN 2 3 H L D E F J N TO-220AB A G M TO-220AB DIM. MIN. MAX. A B C D E F G H I J K L M.4.40 N O.7.37 All Dimensions in millimeter PIN ASSIGNMENT Main Terminal 2 Main Terminal 2 3 Gate 4 Main Terminal 2 MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit Peak Repetitive Off State Voltage () (TJ= -40 to, Sine Wave, 50 to 60 Hz; Gate Open) T2M5T600B VDRM, VRRM 600 Volts On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz, TC =70 ) IT(RMS) 2 Amp Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ= 25 ) ITSM 90 Amps 2 2 Circuit Fusing Consideration (t = 8.3 ms) I t 33 A s Peak Gate Power (Tc = 70, Tp.0 us) PGM 6 Watt Average Gate Power (Tc = 70, t = 8.3 ms) PG(AV) 0.35 Watt Operating Junction Temperature Range TJ -40 to + Storage Temperature Range Tstg -40 to +50 Notice: () VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV. 4, Oct-20,KTXC23
2 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance - Junction to Case - Junction to Ambient RthJC RthJA /W Maximum Lead Temperature for Soldering Purposes /8" from Case for Seconds TL 260 ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise noted; Electrical apply in both directions) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM, VRRM; Gate Open) TJ=25 TJ= IDRM IRRM 2.0 ua ma ON CHARACTERISTICS Peak On-State Voltage (ITM=± 7A 2.0 ms, Duty Cycle 2%) VTM.85 Volts Gate Trigger Current (VD = 2V; RL = 0 Ohms) IGT IGT2 IGT ma Gate Trigger Voltage (VD = 2 V; RL =0 Ohms) VGT VGT2 VGT Volts Holding Current (VD = 2 V, Initiating Current = ± 200 ma, Gate Open) Latching Current (VD = 2 V, IG = 5 ma) I H 2.5 ma I L I L2 I L ma DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5A, Commutating dv/dt = V/us, Gate Open, TJ =, f = 500 Hz, Cs = 0.0 uf, RS = 5 Ohms) di/dt(c) 8.0 A/ms Critical Rate of Rise of Off-State Voltage (VD = 67% Rated VDRM, Exponential Waveform, RGK=K Ohms, TJ= ) dv/dt 5 40 V/us Repetitive Critical Reat of Rise of On-State Current (IPK = 50A; PW = 40 usec; dig/dt = A/usec;Igt = 0mA; f= 60Hz) di/dt A/us
3 Quadrant Definitions All polarities are referenced to MT Whith in -phase signal (using standard AC lines) quadrants I and III are used
4 IGT, GATE TRIGGER CURRENT (ma) 0 Q3 Q Figure. Typical Gate Trigger Current Q TJ, JUNCTION TEMPERATURE ( o C) VGT, GATE TRIGGER VOLTAGE (VOLTS) Q3 Q2 Q Figure 2.Typical Gate Trigger Voltage TJ, UNCTION TEMPERATURE ( o C) 0 Figure 3. Typical Latching Current 0 Figure 4. Typical Holding Current IL, LATCHING CURRENT (ma) Q3 Q2 Q IH, HOLDING CURRENT (ma) MT2 Negative MT2 Positive TJ, JUNCTION TEMPERATURE ( o C) TJ, JUNCTION TEMPERATURE ( o C) TC, CASE TEMPERATURE( o C) Figure 5. Typical RMS Current Derating 90 30, IT(RMS), RMS ON-STATE CURRENT (AMPS) DC P(AV), AVERAGE POWER DISSIPATION (WATTS) Figure 6. On-State Power Dissipation DC IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 30
5 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 0 Figure 7. Typical On-State Characteristics TJ = 25 TJ = 25 TJ = VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0. Figure 8. Typical Thermal Response t, TIME (ms)
6 Legal Disclaimer Notice Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC.
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LITE-ON SEMICONDUCTOR BIDIRECTIONAL ESD PROTECTION DIODES STAND-OFF VOLTAGE - 12. Volts POWER DISSIPATION - 35 WATTS GENERAL DESCRIPTION Electro Static Discharge ( ESD ) protection diodes in ultra small
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BT37 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT37 6 8 bidirectional
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Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
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Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever halfwave silicon
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MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
More informationSymbol Parameter Value Unit BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67
SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY ISOLTED PCKGE : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The and Family Silicon Controlled Rectifiers
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GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a full pack, SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT5X- 5 65 8 bidirectional
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BT9 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT9
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BT6 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. UNIT intended for use in applications requiring high bidirectional transient and blocking
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DISCRETE SEMICONDUCTORS DATA SHEET BTA6 series B Product specification October 997 Semiconductors Product specification BTA6 series B GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL PARAMETER
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BT39 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
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DISCRETE SEMICONDUCTORS DATA SHEET BT38 series Product specification June 2 NXP Semiconductors Product specification BT38 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic
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F series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high F 5 6 8 bidirectional
More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation
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DISCRETE SEMICONDUCTORS DATA SHEET Product specification January 998 NXP Semiconductors Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER
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MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
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Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
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Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
More informationC122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
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