MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS

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Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed

1 Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 8 V OnState Current Rating of 4. A RMS at 18 C High Immunity to dv/dt 5 V/ s at 125 C High Immunity to di/dt 6. A/ms at 125 C Epoxy Meets UL 94 in ESD Ratings: Human Body Model, 3B 8 V Machine Model, C 4 V PbFree Packages are Available MAXIMUM RATINS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) (T J = 4 to 125 C, Sine Wave, 5 to Hz, ate Open) MAC4DCM MAC4DCN OnState RMS Current (Full Cycle Sine Wave, Hz, T C = 18 C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, Hz, T J = 125 C) Circuit Fusing Consideration (t = 8.3 msec) Peak ate Power (Pulse Width 1 sec, T C = 18 C) Average ate Power (t = 8.3 msec, T C = 18 C) Peak ate Current (Pulse Width 2 sec, T C = 18 C) Peak ate Voltage (Pulse Width 2 sec, T C = 18 C) V DRM, V RRM 8 V I T(RMS) 4. A I TSM 4 A I 2 t 6.6 A 2 sec P M 2. W P (AV) 1. W I M 4. A V M 5. V Operating Junction Temperature Range T J 4 to 125 C Storage Temperature Range T stg 4 to 15 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded TRIACS 4. AMPERES RMS 8 VOLTS MT2 Y WW AC4DCx 4 4 Littelfuse.com DPAK CASE 369C STYLE 6 DPAK3 CASE 369D STYLE 6 PIN ASSINMENT 1 Main Terminal 1 2 Main Terminal 2 3 ate 4 Main Terminal 2 ORDERIN INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. MARKIN DIARAMS = Year = Work Week = Device Code x= M or N = PbFree Package YWW AC 4DCx YWW AC 4DCx 1 Publication Order Number:

2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase JunctiontoAmbient JunctiontoAmbient (Note 2) R JC R JA R JA C/W Maximum Lead Temperature for Soldering Purposes (Note 3) T L 2 C ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted; Electricals apply in both directions) OFF CHARACTERISTICS Peak Repetitive Blocking Current (V D = Rated V DRM, V RRM ; ate Open) T J = 25 C T J = 125 C ON CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 4) (I TM = ± 6. A) V TM V I DRM, I RRM.1 2. ma ate Trigger Current (Continuous dc) (V D = 12 V, R L = 1 ) MT2(+), (+) MT2(+), () MT2(), () I T ma ate Trigger Voltage (Continuous dc) (V D = 12 V, R L = 1 ) MT2(+), (+) MT2(+), () MT2(), () V T V ate NonTrigger Voltage (Continuous dc) (V D = 12 V, R L = 1 ) MT2(+), (+); MT2(+), (); MT2(), () T J = 125 C V D.2.4 V Holding Current (V D = 12 V, ate Open, Initiating Current = ± 2 ma) I H ma Latching Current (V D = 12 V, I = 35 ma) MT2(+), (+) MT2(+), () MT2(), () DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (V D = 4 V, I TM = 4. A, Commutating dv/dt = 18 V/ sec, ate Open, T J = 125 C, f = 25 Hz, CL = 5. F, LL = 2 mh, No Snubber) (See Figure 16) I L ma di/dt(c) A/ms Critical Rate of Rise of OffState Voltage (V D =.67 X Rated V DRM, Exponential Waveform, ate Open, T J = 125 C) dv/dt 5 17 V/ s 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 1 seconds. 4. Pulse Test: Pulse Width 2. msec, Duty Cycle 2%. ORDERIN INFORMATION Device Package Type Package Shipping MAC4DCM1 DPAK3 369D 75 Units / Rail MAC4DCM1 DPAK3 (PbFree) 369D 75 Units / Rail MAC4DCMT4 DPAK 369C 25 / Tape & Reel MAC4DCMT4 DPAK 369C 25 / Tape & Reel (PbFree) MAC4DCN1 DPAK3 369D 75 Units / Rail MAC4DCN1 DPAK3 369D 75 Units / Rail (PbFree) MAC4DCNT4 DPAK 369C 25 / Tape & Reel MAC4DCNT4 DPAK (PbFree) 369C 25 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2 Publication Order Number:

3 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol V DRM I DRM V RRM I RRM Parameter Peak Repetitive Forward OffState Voltage Peak Forward Blocking Current Peak Repetitive Reverse OffState Voltage Peak Reverse Blocking Current I RRM at V RRM on state I H V TM Quadrant 1 MainTerminal 2 + V TM I H Maximum OnState Voltage Holding Current I H off state I DRM at V DRM + Voltage Quadrant 3 MainTerminal 2 V TM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II () I T ATE (+) I T ATE Quadrant I REF REF I T + I T () MT2 () MT2 Quadrant III () I T ATE (+) I T ATE Quadrant IV REF REF MT2 NEATIVE (Negative Half Cycle) All polarities are referenced to. With inphase signals (using standard AC lines) quadrants I and III are used. 3 Publication Order Number:

4 I T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) = 3 9 α α 12 = CONDUCTION ANLE dc (AV), AVERAE POWER DISSIPATION (WATTS) P I T(RMS), RMS ON-STATE CURRENT (AMPS) I T(RMS), RMS ON-STATE CURRENT (AMPS) dc α 12 α 9 = CONDUCTION ANLE = Figure 1. RMS Current Derating Figure 2. OnState Power Dissipation, INSTANTANEOUS ON-STATE CURRENT (AMPS) T T J = 25 C T J = 125 C T J = 25 C 1..1 Z JC(t) = R JC(t) r(t) k V T, INSTANTANEOUS ON-STATE VOLTAE (VOLTS) t, TIME (ms) r (t), TRANSIENT RESISTANCE (NORMALIZED) Figure 3. OnState Characteristics Figure 4. Transient Thermal Response 1.2 I T, ATE TRIER CURRENT (ma) Q1 Q2 Q3 V T, ATE TRIER VOLTAE(VOLTS) Q2 Q3 Q Figure 5. Typical ate Trigger Current versus Junction Temperature Figure 6. Typical ate Trigger Voltage versus Junction Temperature 4 Publication Order Number:

5 I 12 I H, HOLDIN CURRENT (ma) MT2 POSITIVE MT2 NEATIVE, LATCHIN CURRENT (ma) L Q2 Q1 Q Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 1 K 8. K T J = 125 C 15 K V PK = 4 V T J = 125 C 6. K 4. K 8 V V V PK = 4 V 1 K 5. K V 8 V 2. K K K R -, ATE- RESISTANCE (OHMS) R -, ATE- RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus ate Resistance, MT2(+) Figure 1. Exponential Static dv/dt versus ate Resistance, MT2() 1 K 14 K 8. K 6. K 4. K 2. K T J = 1 C 11 C 125 C ATE OPEN 12 K 1 K 8. K 6. K 4. K 2. K 125 C 11 C T J = 1 C ATE OPEN V PK, PEAK VOLTAE (VOLTS) V PK, PEAK VOLTAE (VOLTS) Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) Figure 12. Exponential Static dv/dt versus Peak Voltage, MT2() 5 Publication Order Number:

6 1 K 14 K 8. K 6. K 4. K 2. K 8 V V V PK = 4 V ATE OPEN 12 K 1 K 8. K 6. K 4. K 2. K V 8 V V PK = 4 V ATE OPEN Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2() 1 V PK = 4 V dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATIN VOLTAE (V/ s) 1 1. V DRM t w T J = 125 C f = 1 2 t w (di/dt) c = 6f I TM 1 1 C 75 C di/dt(c), RATE OF CHANE OF COMMUTATIN CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage L L 1N47 2 V RMS ADJUST FOR I TM, Hz V AC MEASURE I CHARE TRIER CHARE CONTROL NON POLAR C L TRIER CONTROL MT2 1N V Note: Component values are for verification of rated (di/dt) c. See AN148 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) c 6 Publication Order Number:

7 PACKAE DIMENSIONS DPAK CASE 369C ISSUE O B C T SEATIN PLANE NOTES: 1. DIMENSIONIN AND TOLERANCIN PER ANSI Y14.5M, CONTROLLIN DIMENSION: INCH. V S F R L A K D 2 PL J H.13 (.5) M T E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F BSC 4.58 BSC H J K L.9 BSC 2.29 BSC R S U.2.51 V Z STYLE 6: PIN MT2 3. ATE 4. MT2 SOLDERIN FOOTPRINT* SCALE 3:1 mm inches 7 Publication Order Number:

8 PACKAE DIMENSIONS DPAK3 CASE 369D1 ISSUE B V B R C E NOTES: 1. DIMENSIONIN AND TOLERANCIN PER ANSI Y14.5M, CONTROLLIN DIMENSION: INCH. S T SEATIN PLANE F A K D 3 PL J.13 (.5) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F BSC 2.29 BSC H J K R S V Z STYLE 6: PIN MT2 3. ATE 4. MT2 Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Littelfuse.com 8 Publication Order Number:

MAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS

MAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.