Silicon Bidirectional Thyristors
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- Evangeline Copeland
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1 Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to 800 Volts On-State Current Rating of.0 Amperes RMS at 00 C Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt 500 V/µs minimum at 5 C Minimizes Snubber Networks for Protection High Surge Current Capability 0 Amperes Industry Standard TO-0AB Package High Commutating di/dt 6.0 A/ms minimum at 5 C Operational in Three Quadrants: Q, Q, and Q Device Marking: Logo, Device Type, e.g., MACM, Date Code TRIACS AMPERES RMS 600 thru 800 VOLTS MT G MAXIMUM RATINGS (TJ = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage() (TJ = 0 to 5 C, Sine Wave, 50 to 60 Hz, Gate Open) MACM MACN On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 00 C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 5 C) Circuit Fusing Consideration (t = 8. ms) Peak Gate Power (Pulse Width.0 µs, TC = 00 C) Average Gate Power (t = 8. ms, TC = 00 C) VDRM, VRRM Volts IT(RMS).0 Amps ITSM 0 Amps It 6.6 Asec PGM Watt PG(AV) 0. Watt Operating Junction Temperature Range TJ 0 to +5 Storage Temperature Range Tstg 0 to +50 () VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. C C ORDERING INFORMATION Device Package Shipping MACM TO0AB 50 Units/Rail MACN TO 0AB CASE A STYLE TO0AB PIN ASSIGNMENT Main Terminal Main Terminal Gate Main Terminal 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 999 February, 000 Rev. Publication Order Number: MACM/D
2 MACM, MACN THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Characteristic Symbol Value Unit Maximum Lead Temperature for Soldering Purposes /8 from Case for 0 Seconds TL 60 C RθJC RθJA. 6.5 C/W ELECTRICAL CHARACTERISTICS (TJ = 5 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 5 C TJ = 5 C ON CHARACTERISTICS Peak On-State Voltage() (ITM = ±6.0 A) IDRM, IRRM VTM..6 V ma Gate Trigger Current (Continuous dc) (VD = V, RL = 00 Ω) MT(+), G(+) MT(+), G( ) MT( ), G( ) Holding Current (VD = V, Gate Open, Initiating Current = ±00 ma) Latching Current (VD = V, IG = 5 ma) MT(+), G(+) MT(+), G( ) MT( ), G( ) Gate Trigger Voltage (Continuous dc) (VD = V, RL = 00 Ω) MT(+), G(+) MT(+), G( ) MT( ), G( ) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 00 V, ITM =.0 A, Commutating dv/dt = 8 V/µs, Gate Open, TJ = 5 C, f = 50 Hz, CL = 5.0 µf, LL = 0 mh, No Snubber) Critical Rate of Rise of Off-State Voltage (VD = 0.67 x Rated VDRM, Exponential Waveform, Gate Open, TJ = 5 C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 0 µsec; dig/dt = 00 ma/µsec; f = 60 Hz () Pulse Test: Pulse Width.0 ms, Duty Cycle %. IGT ma IH ma IL VGT ma (di/dt)c A/ms dv/dt V/µs di/dt 0 A/µs V
3 MACM, MACN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol VDRM IDRM VRRM IRRM Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current IRRM at VRRM on state IH VTM Quadrant MainTerminal + VTM IH Maximum On State Voltage Holding Current IH off state + Voltage IDRM at VDRM Quadrant MainTerminal V TM Quadrant Definitions for a Triac MT POSITIVE (Positive Half Cycle) + (+) MT (+) MT Quadrant II ( ) IGT GATE (+) IGT GATE Quadrant I REF REF IGT + IGT ( ) MT ( ) MT Quadrant III ( ) IGT GATE (+) IGT GATE Quadrant IV REF REF MT NEGATIVE (Negative Half Cycle) All polarities are referenced to. With in phase signals (using standard AC lines) quadrants I and III are used.
4 MACM, MACN IGT, GATE TRIGGER CURRENT (ma) 00 0 Q Q Q TJ, JUNCTION TEMPERATURE ( C) Figure. Typical Gate Trigger Current versus Junction Temperature VGT, GATE TRIGGER VOLTAGE (VOLTS) Q Q Q TJ, JUNCTION TEMPERATURE ( C) Figure. Typical Gate Trigger Voltage versus Junction Temperature, LATCHING CURRENT (ma) 00 0 Q Q Q I H, HOLDING CURRENT (ma) 00 0 MT Positive MT Negative IL TJ, JUNCTION TEMPERATURE ( C) TJ, JUNCTION TEMPERATURE ( C) Figure. Typical Latching Current versus Junction Temperature Figure. Typical Holding Current versus Junction Temperature TC, CASE TEMPERATURE ( C) IT(RMS), RMS ON-STATE CURRENT (AMPS).5 0 DC P(AV), AVERAGE POWER DISSIPATION (WATTS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS).5 DC 0 Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation
5 MACM, MACN IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 00 0 TJ = 5 C TJ = 5 C TJ = 5 C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (ms) Figure 8. Typical Thermal Response VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 7. Typical On-State Characteristics 5
6 MACM, MACN PACKAGE DIMENSIONS TO 0AB CASE A 09 ISSUE Z H Q Z L V G N D A K T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE : PIN. MAIN TERMINAL. MAIN TERMINAL. GATE. MAIN TERMINAL 6
7 MACM, MACN Notes 7
8 MACM, MACN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 807 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+) (M F :00pm to 5:00pm Munich Time) ONlit german@hibbertco.com French Phone: (+) (M F :00pm to 5:00pm Toulouse Time) ONlit french@hibbertco.com English Phone: (+) (M F :00pm to 5:00pm UK Time) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to :00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan 859 Phone: r55@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MACM/D
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