WGW15G120N. Applications General purpose inverter Frequency converters Induction Heating(IH) Uninterrupted Power Supply(UPS)

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1 Low Loss IGBT Features & Tc=100 low Gate charge(typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMI Pb-free lead plating; RoHS compliant Applications General purpose inverter Frequency converters Induction Heating(IH) Uninterrupted Power Supply(UPS) Absolute Maximum Ratings(Tc=25 ) G C E TO3P(N) Symbol Parameter Value Unit VCES Collector-Emitter Voltage 1200 V IC DC Collector Current Tc=25 30 A Tc= A ICP Collector pulse Current Tp limited by TJ 45 A VGES Gate-Emitter Voltage ±20 V tsc Short circuit withstand time VGE=10V,VCE 1200V,TJ μs Turn-off safe area VCE 1200V,TJ A PD Total Dissipation 150 W TJ Operation Junction Temperature -40 ~ 150 TSTG Storage Temperature -50 ~ 150 TL Maximum Lead Temperature for Soldering Purposes 300 Thermal c Symbol Parameter Value Min Typ Max Unit RQJC Thermal Resistance, Junction -to -Case /W RQJA Thermal Resistance, Junction-to -Ambient /W Rev.A Aug.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

2 Electrical c(tc=25 ) c Symbol Test Condition Min Typ Max Unit Gate-body leakage current IGES VGS=±30V,VCE=0V - - ±100 na Collector-Emitter Breakdown Voltage V(BR)CES IC=0.5mA,VGE=0V V Collector-Emitter Saturation Voltage VCE(sat) IC=15A, VGE=15V Tc= V Tc= Zero Gate Voltage Collector current ICES V CE=1200V, VGE=0V Tc= Tc= ma Gate threshold voltage VGE(th) VCE=VGE,ID=0.6mA V Forward Transconductance gfs VCE=20V,ID=15A S Short Collector Current IC(SC) VGE=15V, VCE=600, tsc<10μs A Total Gate Charge Qg VCE=960V, IC=15A, VGE=15V nc Input capacitance Ciss VCE=25V, Reverse transfer capacitance Crss VGS=0V, pf Output capacitance Coss f=1mhz Switchi ng time Turn-on delay time Td(on) VCE=600V, Turn-onRise time tr IC=15A Turn-off delay time Td(off) RG=56Ω Turn-off Fall time tf ns Turn-on energy Eon VCE=600V, Turn-off energy Eoff IC=15A mj Total swiitching energy Etotal RG=56Ω Anti-Parallet Diode c (Ta=25 ) c Symbol Test Condition Min Type Max Unit Forward voltage(diode) VDSF IS=15A,VGS=0V V Reverse recovery time trr IS=10A,VGS=0V, R=800V ns Reverse recovery charge Qrr didr / dt =750 A / µs µc Note 1.Repeativity rating :pulse width limited by junction temperature 2.Allowed number of short circuits:<1000; time 3.Pulse Test:Pulse Width 300us,Duty Cycle 2% 4. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /7

3 Fig.1 Out cte teristi istics Fig.2 Satur turation tion Voltage racteri risti tics Fig.3 Saturation Voltage vs Case Temperature Fig.4 Loa oad Current vs Frequ quency Fig.5 Capacitance racte Fig.6 Switch tching Loss vs Gate Resistance 3 /7

4 Fig.7 Turn-on cte teristi istics vs Gate Resistance Fig.8 Turn-off cte c tics vs Gate Resistance Fig.9 Turnrn-on racteri risti tics vs Collector Current Fig. g.10 Fig.9 Turnrn-off racteristi tics vs Collector Current Fig.11 Switchi hing Loss vs Collec ector Current Fig.12 Out Gate Charge cte c 4 /7

5 Fig.13 Forward rd cte Fig.13 Stored cte Fig.15 Reverse Recover ery Current cte Fig.16 Reverse Recover ery Time racte Fig.17 Maximum Safe Operation Area Fig.18 Turn-off Safe Operation Area 5 /7

6 Fig.17 Maximum Safe Operation Area 6 /7

7 TO-3PN Package Dimension Unit:mm 7 /7