Enhancement Mode MOSFET (Double N-Channel) 2N7002KDWS. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise) SOT-363
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1 Enhancement Mode MOSFET (Double N-Channel) Enhancement Mode MOSFET (Double N-Channel) Features Advanced Trench Process Technology High density cell design for low R DS(ON) Very low leakage current in off condition ESD Protected 2000V HBM RoHS Compliance SOT-363 Mechanical Data Case: SOT-363, Plastic Package Terminals: Solderable per MIL-STD-750, Method 2026 Weight: gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current Continuous 115 ma IDP Drain Current Pulsed 800 ma PD Drain Power Dissipation T A=25 C 200 mw T A=75 C 120 mw TJ Junction Temperature +150 C TSTG Storage Temperature Range -55 to +150 C ESD Gate-Source ESD Rating 2000 V TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 8
2 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics V(BR)DSS Drain-Source Breakdown Voltage V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current ua VDS=60V, VGS=0V IGSS Gate-Source Leakage Current - - ±10 μa VGS=±20V, VDS=0V On Characteristics (Note3) VGS(th) Gate Threshold Voltage V VDS=VGS, ID=250μA RDS(ON) Drain-Source ON Resistance VGS=10V, ID=500mA Ω VGS=4.5V, ID=200mA g FS Forward Transconductance ms VDS=15V, ID=250mA Dynamic Characteristics Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance pf VDS=25V, VGS=0V, f=1mhz Switching Characteristics ton Turn-On Time toff Turn-Off Time Drain-Source Diode Ratings and Maximum Ratings ns VDD=30V, RL=150Ω ID=200mA, VGEN=10V RG=10 Ω VSD Source-Drain Forward Voltage mv VGS=0V, IS=200mA Page 2 of 8
3 On-Resistance RDS(ON) (Normalized) On-Resistance RDS (Ω) On-Resistance RDS (Ω) Drain Current ID (A) Drain Source Current ID (A) Enhancement Mode MOSFET (Double N-Channel) Typical Characteristics Curves Fig.1- Typical Output Characteristics Fig.2- Transfer Characteristic Drain- Source Voltage VDS (V) Fig.3- On-Resistance vs. Drain Current Gate Source Voltage VGS (V) Fig.4- On-Resistance vs. Gate-Source Voltage Drain Current ID (A) Gate Source Voltage VGS (V) Fig.5- On-Resistance vs. Junction Temperature Junction Temperature TJ ( C) Page 3 of 8
4 Breakdown Voltage BVDSS(V) Source Current IS (A) Gate-Source Voltage VGS (V) G-S Threshold Voltage Vth (Normalized) Enhancement Mode MOSFET (Double N-Channel) Fig.6- Gate Charge Characteristics Fig.7- Threshold Voltage vs. Temperature Gate Charge Qg (nc) Junction Temperature TJ ( C) Fig.8- Breakdown Voltage vs. Junction Temperature Fig.9- Source-Drain Diode Forward Voltage Junction Temperature TJ ( C) Source-Drain Voltage VSD (V) Page 4 of 8
5 Switching Time Test Circuit Gate Charge Test Circuit Page 5 of 8
6 Equivalent Circuit Dimensions in inch (mm) Page 6 of 8
7 Mounting Pad Layout in inch (mm) Page 7 of 8
8 How to contact us: US HEADQUARTERS WEST HARRISON PARKAWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI 5F-2, NO. 77, SEC. 1, HSIN TAI WU ROAD, HSI-CHIH, TAIPEI HSIEN, TAIWAN R.O.C. Tel: Fax: TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 8 of 8
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