LSI1012LT1G S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET

Transcription

1 LSI2LTG SLSI2LTG. FEATURES Power MOSFET:.8V Rated GateSource ESD Protected HighSide Switching SOT23(TO236) Low OnResistance: Ω Low Threshold: V (typ) Fast Switching Speed: ns We declare that the material of product compliance with RoHS requirements and Halogen Free. S prefix for automotive and other applications requiring Gate unique site and control change requirements; AECQ qualified and PPAP capable. 3 Drain 2. BENEFITS Ease in Driving Switches Low Offset (Error) Voltage LowVoltage Operation HighSpeed Circuits Low Battery Voltage Operation Source 2 (Top View) 3. APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories. Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers 4. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LSI2LTG A2 3/Tape&Reel. MAXIMUM RATINGS(Ta = 2ºC) DrainSource Voltage GateSource Voltage Pulsed Drain Current(Note ) Parameter Continuous Drain Current (TJ = ) (Note 2) TA = 2 TA = 8 Continuous Source Current (diode conduction)(note 2) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, Tstg.Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board. Symbol secs Steady State IDM IS 27 2 PD 22 Unit VDS 2 V VGS ±6 V ID ma mw ~+ Leshan Radio Company, LTD. Rev.C Apr. 28 /

2 6. ELECTRICAL CHARACTERISTICS (Ta= 2ºC ) Static Characteristic Gate Threshold Voltage (VDS = VGS, ID = 2µA ) GateBody Leakage (VDS = V, VGS = ±4. V) Zero Gate Voltage Drain Current (VDS = 2 V, VGS = V ) (VDS = 2 V, VGS = V, TJ = 8 ) OnState Drain Current(Note ) (VDS = V, VGS = 4. V) DrainSource OnState Resistance(Note ) (VGS = 4. V, ID = 6 ma) (VGS = 2. V, ID = ma) (VGS =.8 V, ID = 3 ma) Forward Transconductance(Note ) (VDS = V, ID = 4 ma) Diode Forward Voltage(Note ) (IS = ma, VGS = V) Dynamic(Note 2) Total Gate Charge GateSource Charge GateDrain Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = V, VGS = 4. V, ID = 2 ma) (VDD = V, RL = 47Ω,ID=2 ma, VGEN = 4. V, RG = Ω) VGS = V, VDS = V, f = MHz td(on) Input Capacitance VGS = V, VDS Output Capacitance Coss = V, f = MHz Reverse Transfer Capacitance Crss 3.Pulse test; pulse width 3 µs, duty cycle 2%. 4.Guaranteed by design, not subject to production testing. Qg tr LSI2LTG,SLSI2LTG Symbol Min. Typ. Max. Unit VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Qgs Qgd 22 td(off) 2 tf Coss Crss ±. ± V µa na µa ma Ω S V pc ns pf pf Leshan Radio Company, LTD. Rev.C Apr. 28 2/

3 LSI2LTG,SLSI2LTG 7.ELECTRICAL CHARACTERISTICS CURVES VGS=.6V,.8V, 2V,3V,4V,4.V Ta=2 VDS=V. VGS=.4V VGS=.2V VGS=V. 2 3 VDS,Drain to Source Voltage(V) ID vs. VDS.. VGS,Gate to Source Voltage(V) ID vs. VGS.. Ta=2 IS,Diode Forward Current(A) 2 2 RDSON,ON resistance(ω). VGS=.8V VGS=2.V. VGS=4.V VSD,Diode Forward Voltage(V) IS vs. VSD RDSON vs. ID Leshan Radio Company, LTD. Rev.C Apr. 28 3/

4 LSI2LTG,SLSI2LTG 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) RDSON,On Resistance(Ω) ID=2mA RDSON ON Resistance(Ω). VGS=.8V,ID=3mA VGS=4.V,ID=6mA VGS,Gate to Source Voltage(V) RDSON vs TJ,Temperature( ) RDSON vs. TJ 2 f=mhz Ta=2 ID=mA (pf) 9 8 VGSTH(V) VDS Drain To Source Voltage(V) Tj,Temperature( ) VGSTH vs. Leshan Radio Company, LTD. Rev.C Apr. 28 4/

5 LSI2LTG,SLSI2LTG 8.OUTLINE AND DIMENSIONS Notes:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L H E θ 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Apr. 28 /