Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03. Power MOSFET. 60 Amps,30Volts N-Channel DPAK. 60 AMPERES 30 VOLTS R DS(on) = 9.0 m (Typ.

Transcription

1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6N3 Power MOSFET 6 Amps,3Volts NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits 6 AMPERES 3 VOLTS R DS(on) = 9. m (Typ.) NChannel D MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS 3 Vdc GatetoSource Voltage Continuous V GS ±2 Vdc Drain Current T A = 25 C I D 6* Adc Drain Current Single Pulse (t p = s) I DM 2 Total Power T A = 25 C P D 75 Watts Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting (V DD = 28 Vdc, V GS = Vdc, I L = 7 Apk, L = 5. mh, R G = 25 ) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note ) JunctiontoAmbient (Note 2) Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds T J, T stg 55 to C 5 E AS 733 mj R JC R JA R JA C/W T L 26 C 2 3 G S 2 3. When surface mounted to an FR board using pad size, (Cu Area.27 in 2 ). 2. When surface mounted to an FR board using the minimum recommended pad size, (Cu Area.2 in 2 ). *Chip current capability limited by package.

2 6N3 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) (V GS = Vdc, I D = 25 Adc) Temperature Coefficient (Positive) V (BR)DSS 3 Vdc Zero Gate Voltage Drain Current (V GS = Vdc, V DS = 2 Vdc) I DSS 5 nadc GateBody Leakage Current (V GS = ±2 Vdc, V DS = Vdc) I GSS ± nadc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (V DS = V GS, I D = 25 Adc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) (V GS = Vdc, I D = 35 Adc) (V GS =.5 Vdc, I D = 2 Adc) V GS(th) R DS(on) Forward Transconductance (V DS = 5 Vdc, I D = Adc) (Note 3) g FS 2 Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note ) (V DS = 2 Vdc, V GS = Vdc, f=mhz). Vdc mv/ C m C iss 25 pf C oss 68 C rss 26 TurnOn Delay Time t d(on) ns Rise Time (V DD = 5 Vdc, I D = 5 Adc, t r 8 V GS = Vdc, TurnOf f Delay Time R t d(off) 32 G = 3.3 ) Fall Time t f 5 Gate GaeCharge age SOURCEDRAIN DIODE CHARACTERISTICS (V DS = 2 Vdc, I D = 5 Adc, V GS =.5 Vdc) (Note 3) Forward OnVoltage (I S = 2.3 Adc, V GS = Vdc) (Note 3) (I S = 3 Adc, V GS = Vdc) (I S = 2.3 Adc, V GS = Vdc, T J = 5 C) Reverse e Recovery e Time (I S = Adc, V GS = Vdc, di S /dt = A/ s) (Note 3) Q T 3 nc Q 6.5 Q2 8. V SD t rr 39 ns t a 2 t b 8 Reverse Recovery Stored Charge Q rr.3 C 3. Pulse Test: Pulse Width 3 s, Duty Cycle 2%.. Switching characteristics are independent of operating junction temperatures Vdc 2

3 6N3 I D, DRAIN CURRENT (AMPS) V 8 V 6 V 5 V.5 V V 3.8 V V DS, DRAINTOSOURCE VOLTAGE (V) 3.6 V 3. V 3.2 V 3 V V GS = 2.8 V I D, DRAIN CURRENT (AMPS) 6 V DS V T J = 55 C V GS, GATET OSOURCE VOLTAGE (V) Figure. OnRegion Characteristics Figure 2. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( ) I D = A V GS, GATET OSOURCE VOLTAGE (V) R DS(on), DRAINTOSOURCE RESISTANCE ( ) V GS =.5 V V GS = V I D, DRAIN CURRENT (A) R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) Figure 3. OnResistance versus GateT osource Voltage I D = 3 A V DS = V T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation with Temperature I DSS, LEAKAGE (na) Figure. OnResistance versus Drain Current and Gate Voltage V GS = V T J = C V DS, DRAINTOSOURCE VOLTAGE (V) Figure 6. DrainToSource Leakage Current versus Voltage 3

4 6N3 C, CAPACITANCE (pf) 5 C 5 iss 35 3 C rss C iss C oss C rss V DS = V V GS = V V GS V DS GATET OSOURCE OR DRAINTOSOURCE VOLTAGE (V) Figure 7. Capacitance Variation V GS, GATET OSOURCE VOLTAGE (V) Q 8 Q T Q 2 Q g, TOTAL GATE CHARGE (nc) VGS I D = 5 A Figure 8. GatetoSource and DraintoSource Voltage versus Total Charge t, TIME (ns) V DD = 2 V I D = 2 A V GS = V t f t d(off) t r t d(on) I S, SOURCE CURRENT (AMPS) V GS = V R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation versus Gate Resistance V SD, SOURCETODRAIN VOLTAGE (V) Figure. Diode Forward Voltage versus Current

5 6N3 ID, DRAIN CURRENT (AMPS). V GS = V SINGLE PULSE T C = 25 C R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) s ms ms dc I S t p di/dt t a t rr t b I S.25 I S TIME Figure. Maximum Rated Forward Biased Safe Operating Area Figure 2. Diode Reverse Recovery Waveform Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE. DUTY CYCLE D =.5 MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT P (pk) t t 2 DUTY CYCLE, D = t /t 2 Figure 3. Thermal Response Various Duty Cycles R JA (t) = r(t) R JA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T A = P (pk) R JA (t) SINGLE PULSE. E 5 E E 3 E 2 E E+ E+ E+2 E+3 t, TIME (seconds) 5

6 6N3 PACKAGE DIMENSIONS DPAK, STRAIGHT LEAD CASE 3697 ISSUE M V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: INCH. T SEATING PLANE S F 2 3 G A K D 3 PL.3 (.5) M T J H INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.9 BSC 2.29 BSC H J K R S V STYLE 2: PIN. GATE 2. DRAIN 3. SOURCE. DRAIN 6

7 6N3R PACKAGE DIMENSIONS DPAK CASE 369A3 ISSUE AB V S F B R 2 3 G L A K J H C D 2 PL.3 (.5) M T T E SEATING PLANE U Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.8 BSC.58 BSC H J K L.9 BSC 2.29 BSC R S U.2.5 V Z STYLE 2: PIN. GATE 2. DRAIN 3. SOURCE. DRAIN 7