MTB2P50E. Power MOSFET 2 Amps, 500 Volts P Channel D 2 PAK. 2 AMPERES 500 VOLTS R DS(on) = 6 Ω
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1 MTBP5E Preferred Device Power MOSFET Amps, 5 Volts PChannel D PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits I DSS and V DS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured Not Sheared Specially Designed Leadframe for Maximum Power Dissipation Available in mm inch/8 Unit Tape & Reel, Add T Suffix MAXIMUM RATINGS (T C = 5 C unless otherwise noted) Rating Symbol Value Unit DrainSource Voltage V DSS 5 DrainGate Voltage (R GS =. MΩ) V DGR 5 GateSource Voltage Continuous NonRepetitive (t p ms) Drain Current Continuous Drain Current C Drain Current Single Pulse (t p µs) Total Power Dissipation Derate above 5 C Total Power T A = 5 C (Note ) V GS ± V GSM ± I D. I D.6 I DM 6. P D Operating and Storage Temperature Range T J, T stg 55 to 5 Single Pulse DraintoSource Avalanche Energy Starting T J = 5 C (V DD =, V GS =, I L =. Apk, L = mh, R G = 5 Ω) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient (Note ) Maximum Lead Temperature for Soldering Purposes, /8 from case for sec. Vpk Adc Apk Watts W/ C C E AS 8 mj R θjc R θja R θja C/W T L 6 C. When surface mounted to an FR board using the minimum recommended pad size. G AMPERES 5 VOLTS R DS(on) = 6 Ω PChannel D MARKING DIAGRAM & PIN ASSIGNMENT Gate MTBP5E Y WW Drain S MTBP5E YWW Drain D PAK CASE 8B STYLE Source = Device Code = Year = Work Week ORDERING INFORMATION Device Package Shipping MTBP5E D PAK 5 Units/Rail MTBP5ET D PAK 8/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, March, Rev. Publication Order Number: MTBP5E/D
2 MTBP5E ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS =, I D = 5 µadc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V DS = 5, V GS = ) (V DS = 5, V GS =, T J = 5 C) V (BR)DSS 5 GateBody Leakage Current (V GS = ±, V DS = ) I GSS nadc ON CHARACTERISTICS (Note ) Gate Threshold Voltage (V DS = V GS, I D = 5 µadc) Temperature Coefficient (Negative) I DSS V GS(th). Static DrainSource OnResistance (V GS =, I D =. Adc) R DS(on).5 6. Ohm DrainSource OnVoltage (V GS = ) (I D =. Adc) (I D =. Adc, T J = 5 C) V DS(on) Forward Transconductance (V DS = 5, I D =. Adc) g FS.5.9 mhos mv/ C µadc mv/ C DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (V DS = 5, V GS =, f =. MHz) C iss 85 8 pf C oss C rss 6 5 SWITCHING CHARACTERISTICS (Note ) TurnOn Delay Time t d(on) ns Rise Time (V DD = 5, I D =. Adc, t r 8 TurnOff Delay Time V GS =, R G = 9. Ω) t d(off) Fall Time Gate Charge (See Figure 8) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note ) (I S =. Adc, V GS = ) (I S =. Adc, V GS =, T J = 5 C) Reverse Recovery Time (See Figure ) Reverse Recovery Stored Charge t f 9 8 Q T 9 7 nc (V DS =, I D =. Adc, Q.7 V GS = ) Q 7.9 Q 9.9 V SD t rr ns t a 6 (I S =Adc. Adc, V GS =, di S /dt = A/µs) t b 6 Q RR.9 µc INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead.5 from package to center of die) L D.5 nh Internal Source Inductance (Measured from the source lead.5 from package to source bond pad) L S 7.5 nh. Pulse Test: Pulse Width µs, Duty Cycle %.. Switching characteristics are independent of operating junction temperature.
3 MTBP5E TYPICAL ELECTRICAL CHARACTERISTICS I D, DRAIN CURRENT (AMPS) T J = 5 C V GS = V 7 V 8 V 6 V 5 V I D, DRAIN CURRENT (AMPS) V DS V T J = 55 C C 5 C.5 V V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 8 6 V GS = V T J = C 5 C 55 C I D, DRAIN CURRENT (AMPS), DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) T J = 5 C V GS = V 5 V I D, DRAIN CURRENT (AMPS) Figure. OnResistance versus Drain Current and Temperature Figure. OnResistance versus Drain Current and Gate Voltage, DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) R DS(on).5 V GS = V I D = A IDSS, LEAKAGE (na) T J, JUNCTION TEMPERATURE ( C) V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS = V T J = 5 C C 5 C Figure 5. OnResistance Variation with Temperature Figure 6. DrainToSource Leakage Current versus Voltage
4 MTBP5E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (I G(AV) ) can be made from a rudimentary analysis of the drive circuit so that t = Q/I G(AV) During the rise and fall time interval when switching a resistive load, V GS remains virtually constant at a level known as the plateau voltage, V SGP. Therefore, rise and fall times may be approximated by the following: t r = Q x R G /(V GG V GSP ) t f = Q x R G /V GSP where V GG = the gate drive voltage, which varies from zero to V GG R G = the gate drive resistance and Q and V GSP are read from the gate charge curve. During the turnon and turnoff delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: t d(on) = R G C iss In [V GG /(V GG V GSP )] t d(off) = R G C iss In (V GG /V GSP ) The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the offstate condition when calculating t d(on) and is read at a voltage corresponding to the onstate when calculating t d(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 8 6 V DS = V V GS = V T J = 5 C C iss V GS = V T J = 5 C C iss C, CAPACITANCE (pf) C iss 8 C, CAPACITANCE (pf) C oss C rss V DS, DRAINTOSOURCE VOLTAGE (VOLTS) 6 C rss C rss C oss V GS V DS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation
5 MTBP5E V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 6 Q Q Q T V GS I D = A T J = 5 C Q V DS Q T, TOTAL CHARGE (nc) V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) t, TIME (ns) V DD = 5 V I D = A V GS = V T J = 5 C R G, GATE RESISTANCE (OHMS) t f t r t d(off) t d(on) Figure 8. GateToSource and DrainToSource Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAINTOSOURCE DIODE CHARACTERISTICS, SOURCE CURRENT (AMPS) IS V GS = V T J = 5 C V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage versus Current SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous draintosource voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T C ) of 5 C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, Transient Thermal ResistanceGeneral Data and Its Use. Switching between the offstate and the onstate may traverse any load line provided neither rated peak current (I DM ) nor rated voltage (V DSS ) is exceeded and the transition time (t r,t f ) do not exceed µs. In addition the total power averaged over a complete switching cycle must not exceed (T J(MAX) T C )/(R θjc ). A Power MOSFET designated EFET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases nonlinearly with an increase of peak current in avalanche and peak junction temperature. Although many EFETs can withstand the stress of draintosource avalanche at currents up to rated pulsed current (I DM ), the energy rating is specified at rated continuous current (I D ), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure ). Maximum energy at currents below rated continuous I D can safely be assumed to equal the values indicated. 5
6 MTBP5E SAFE OPERATING AREA I D, DRAIN CURRENT (AMPS) V GS = V SINGLE PULSE T C = 5 C µs ms µs E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj). ms dc R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT V DS, DRAINTOSOURCE VOLTAGE (VOLTS) T J, STARTING JUNCTION TEMPERATURE ( C) 8 6 I D = A Figure. Maximum Rated Forward Biased Safe Operating Area Figure. Maximum Avalanche Energy versus Starting Junction Temperature r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE. D = SINGLE PULSE.5 P (pk) t, TIME (s) t t DUTY CYCLE, D = t /t R θjc (t) = r(t) R θjc D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) R θjc (t)..e5.e.e.e.e.e+.e+ Figure. Thermal Response I S t p di/dt t a t rr t b I S.5 I S TIME PD, POWER DISSIPATION (WATTS) R θja = 5 C/W Board material =.65 mil FR Mounted on the minimum recommended footprint Collector/Drain Pad Size 5 mils x 5 mils T A, AMBIENT TEMPERATURE ( C) Figure. Diode Reverse Recovery Waveform Figure 5. D PAK Power Derating Curve 6
7 MTBP5E PACKAGE DIMENSIONS D PAK CASE 8B ISSUE H T SEATING PLANE B G S D PL. (.5) M T B M K C H A E V W J W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. 8B THRU 8B OBSOLETE, NEW STANDARD 8B. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G. BSC.5 BSC H J K L M N.97 REF 5. REF P.79 REF. REF R.9 REF.99 REF S V VARIABLE CONFIGURATION ZONE R N U P STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN L L L M M M F F F VIEW WW VIEW WW VIEW WW SOLDERING FOOTPRINT* inches mm *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
8 MTBP5E ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: or 886 Toll Free USA/Canada Fax: or 8867 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MTBP5E/D
9 This datasheet has been download from: Datasheets for electronics components.
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Power MOSFET 6 Amps, 3 Volts NChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier
More informationNTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
More informationBS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.
Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
More informationNTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
More informationNTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
More informationNVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
More informationNTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
More informationNTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
More informationMMDFS2P102. Power MOSFET 2 Amps, 20 Volts. P Channel SO 8, FETKY. 2 AMPERES 20 VOLTS R DS(on) = 160 m V F = 0.39 Volts
MMDFS2P12 Power MOSFET 2 Amps, 2 Volts PChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky
More informationNTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
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NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
More informationNTGS3443, NVGS3443. Power MOSFET 4.4 Amps, 20 Volts. P Channel TSOP AMPERES 20 VOLTS R DS(on) = 65 m
NTGS, NVGS Power MOSFET., Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package These Devices are PbFree and are RoHS Compliant NVGS
More informationNDF10N62Z. N-Channel Power MOSFET
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
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NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
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NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
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NTB6P, NTBV6 Power OSFET -6 V, -8. A P Channel, D PAK Features Designed for Low R DS(on) Withstands High Energy in Avalanche and Commutation odes AEC Q Qualified NTBV6 These Devices are Pb Free and are
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NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
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NTMD3NLR Power MOSFET.3 Amps, Volts NChannel EnhancementMode SO Dual Package Features Ultra Low OnResistance Provides Higher Efficiency R DS(on) =., V GS = V R DS(on) =., V GS =. V Low Reverse Recovery
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Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
More informationNDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
More informationMTB23P06V. Power MOSFET 23 Amps, 60 Volts P Channel D 2 PAK. 23 AMPERES 60 VOLTS R DS(on) = 120 mω
MTB2P6V Preferred Device Power MOSFET 2 Amps, 6 Volts PChannel D 2 PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed
More informationNTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
More informationNTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
More informationMTD4N20E. Power MOSFET 4 Amps, 200 Volts. N Channel DPAK
MTDNE Preferred Device Power MOSFET Amps, Volts NChannel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over
More informationNTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
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Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
More informationNTP27N06L, NTB27N06L. Power MOSFET 27 Amps, 60 Volts, Logic Level. N Channel TO 220 and D 2 PAK. 27 AMPERES 60 VOLTS R DS(on) = 48 mω
Power MOSFET 7 Amps, 6 Volts, Logic Level NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Typical
More informationNDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
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NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
More informationNTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
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Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level NChannel TO22 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also
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NTMDN3, NVMDN3 Power MOSFET A, 3 V, NChannel SO Dual Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life
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Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
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NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
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NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
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Power MOSFET Amps, Volts PChannel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
More informationPIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
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MTP136 Preferred Device Power MOSFET 75 Amps, 3 Volts NChannel TO22 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers
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