Ultra-Low On-Resistance, Power Load Switch with Soft Start V OUT
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1 Ultra-Low On-Resistance, Power Load Switch with Soft Start Features General Description Ultra-Low On-Resistance: 5mW(typical) Low Quiescent Current: 0mA(max) Soft Start Time Programmable by External Capacitor Wide Input Voltage Range (VIN): 0.8V to V DD +0.3 Supply Voltage Range (VDD): 3V to 5.5V Current Limit Protection Enable Input Output Discharge when Switch Disabled Over-Temperature Protection Tiny small WLCSP.6x Package Lead Free and Green Devices Available (RoHS Compliant) The APL357S is an ultra-low on-resistance, power-distribution switch with external soft start control. The device integrates some protection features, including current-limit protection and over-temperature protection. The current-limit protection can protect down stream devices from catastrophic failure by limiting the output current at current limit threshold during over-load or short-circuit events. The over temperature protection function shuts down the N-channel MOSFET power switch when the junction temperature rises beyond 50 o C and will automatically turns on the power switch when the temperature drops by 30 o C. The device is available in lead free WLCSP.6x package. Applications Pin Configuration Notebook AIO PC APL357SA/B/C/G APL357SD/E/F/H C C VDD SS VDD SS B B Simplified Application Circuit A EN GND A ENB GND VIN VOUT VIN VOUT V DD VDD APL357S VOUT WLCSP.6x (Top View) WLCSP.6x (Top View) V IN VIN SS EN/ENB GND ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 Ordering and Marking Information APL357S Assembly Material Handling Code Temperature Range Package Code Output Current/Enable Function Output Current/Enable Function A :.5A/Active High B : A/Active High C : 0.4A/Active High D :.5A/Active Low G : 3A/Active High Package Code HA : WLCSP.6x Operating Ambient Temperature Range I : -40 to 85 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device E : A/Active Low F : 0.4A/Active Low H : 3A/Active Low APL357SA~H HA: SX X - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 00% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-00D for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). WLCSP.6x Marking (Top View) S X VIN VOUT EN GND VDD SS A B C A B C
3 Absolute Maximum Ratings (Note ) Symbol Parameter Rating Unit V DD VDD to GND Voltage -0.3 ~ 6 V V IN VIN to GND Voltage -0.3 ~ 6 V VOUT to GND Voltage -0.3 ~ 6 V V EN, V ENB EN, ENB to GND Voltage -0.3 ~ 6 V I OUT Continuous Output Current Internally Limited A T J Maximum Junction Temperature -40 ~ 50 T STG Storage Temperature -65 ~ 50 T SDR Maximum Lead Soldering Temperature (0 Seconds) 60 o C o C o C Note: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Thermal Characteristics Symbol Parameter Typical Value Unit θ JA (Note ) Junction-to-Ambient Thermal Resistance in free air WLCSP.6x o C/W Note : θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. Recommended Operating Conditions (Note 3) Symbol Parameter Range Unit V DD VDD Input Voltage (V DD>V IN) 3.0 ~ 5.5 V V IN VIN Input Voltage 0.8 ~ V DD+0.3 V APL357SA/D 0 ~.5 A I OUT VOUT Output Current APL357SB/E 0 ~ A APL357SC/F 0 ~ 0.4 A APL357SG/H 0 ~ 3 A V IH EN Logic High Input Voltage 0.9 ~ 5.5 V V IL ENB Logic Low Input Voltage 0 ~ 0.3 V C SS Soft-Start Capacitor 0 ~ 0 nf T A Ambient Temperature -40 ~ 85 T J Junction Temperature -40 ~ 5 o C o C Note 3: Please refer to the typical application circuit. 3
4 Electrical Characteristics Unless otherwise specified, these specifications apply over V IN = 5V, V DD =5V, V EN =5V (or V ENB =0V) and T A = -40~85 o C. Typical values are at T A =5 o C. Symbol Parameter Test Conditions SUPPLY CURRENT APL357S Min Typ Max Unit I DD VDD Supply Current No load µa I SD VDD Supply Current at Shutdown No load, V DD =5V, V EN =Low (APL357SA/B/C/G) - - µa No load, V DD=5V, V EN=High (APL357SD/E/F/H) µa VIN Supply Current No load µa No load, V DD=5V, V EN=0V or V ENB=5V, V IN=5V µa I IN_OFF VIN Off-State Supply Current No load, V DD=5V, V EN=0V or V ENB=5V, V IN=3.3V µa No load, V DD=5V, V EN=0V or V ENB=5V, V IN=.8V - 0. µa No load, V DD=5V, V EN=0V or V ENB=5V, V IN=0.8V - 0. µa Input Supply Current No load, V DD=V IN=5V, V EN=Low, T A=5 o C - - µa VOUT Leakage Current V DD=5V, V IN=5V, V EN=0V or V ENB=5V µa UNDER-VOLTAGE LOCKOUT (UVLO) Rising VDD UVLO Threshold V DD rising, T J= 5 o C.9..5 V VDD UVLO Hysteresis V POWER SWITCH R DS(ON) Power Switch On Resistance I OUT=0.5A, T J=5 o C mω I OUT =0.5A, T J =-40~5 o C mω VOUT Discharge Resistance V EN=0V or V ENB=5V, VOUT force V Ω CURRENT LIMIT AND SHORT CIRCUIT PROTECTIONS APL357SA/D T J=5 o C A T J=-40 to 5 o C - - A I LIM Current Limit Threshold APL357SB/E T J=5 o C A T J =-40 to 5 o C. - - A APL357SC/F T J=5 o C A APL357SG/H T J=5 o C A SOFT-START CONTROL PIN I SS SS Current V SS=0V µa SS Discharge Resistance V SS=6V, V EN=0V or V ENB=5V, measured at SS kω EN OR ENB INPUT PIN Input Logic High V DD=3~5.5V V Input Logic Low V DD =3~5.5V V Input Current - - µa t D Turn On Delay Time ms OVERT-TEMPERATURE PROTECTION (OTP) Over-Temperature Threshold T J rising C Over-Temperature Hysteresis C 4
5 Typical Operating Characteristics VDD Supply Current, IDD (µa) V IN=V EN=3.3V VDD Supply Current vs. VDD Input Voltage VDD Shutdown Current, ISD (µa) V DD=5V VDD Shutdown Current vs. Junction Temperature APL357SD/E/F/H APL357SA/B/C/G VIN Off-State Supply Current, IIN_OFF (µa) VDD Input Voltage, V DD (V) VIN Off-State Supply Current vs. Junction Temperature V IN=5V=V DD Junction Temperature, T J ( o C) EN Logic Threshold Voltage vs. Junction Temperature EN Logic Threshold Voltage, VEN (V) Junction Temperature, T J ( o C) EN Logic Threshold Voltage vs. VDD Input Voltage Falling Rising VDD Input Voltage, V DD (V) Power Switch On Resistance vs. VDD Input Voltage EN Logic Threshold Voltage, VEN (V) 0.8 Rising Falling Junction Temperature, T J ( o C) Power Switch On Resistance, RDS,ON (mω) V IN=V V IN =3.3V VDD Input Voltage, V DD (V) 5
6 Typical Operating Characteristics(Cont.) Power Switch On Resistance, RDS,ON (mω) Power Switch On Resistance vs. VIN Input Voltage V DD = 3.3V V DD = 5V Power Switch On Resistance, RDS,ON (mω) Power Switch On Resistance vs. Output Current V DD = 3.3V, V IN = 3.3V V DD = 5V, V IN = 5V Power Switch On Resistance, RDS,ON (mω) VIN Input Voltage, V IN (V) Power Switch On Resistance vs. Junction Temperature V DD = 3.3V, V IN = 3.3V V DD = 5V, V IN = 5V Current Limit Level, ILIM(A) Output Current, I OUT (A) Current Limit Level vs. Junction Temperature APL357SA V DD = 3.3V, V IN= 3.3V V DD = 5V, V IN = 5V Current Limit Level, ILIM(A) Junction Temperature, T J ( o C) Current Limit Level vs. VIN Input Voltage V DD = 3.3V V DD = 5V Current Limit Response Time, t CL (µs) Junction Temperature, T J ( o C) Current Limit Response Time vs. Output Peak Current V DD = 5V, C SS=0nF, C OUT=0µF VIN Input Voltage, V IN (V) Output Peak Current, I OUT (A) 6
7 Operating Waveforms Refer to the typical application circuit. T A = 5 o C unless otherwise specified. VIN Power On VIN Power Off V IN V IN I OUT I OUT 3 3 V DD=5V, V EN=5V C SS =nf, R L =3Ω CH: V IN, V/Div, DC CH:, V/Div, DC CH3: I OUT, A/Div, DC TIME: ms/div V DD=5V, V EN=5V C SS =nf, R L =3Ω CH: V IN, V/Div, DC CH:, V/Div, DC CH3: I OUT, A/Div, DC TIME: ms/div Enable Shutdown V EN V EN 3 I OUT 3 I OUT V DD =5V, V IN =5V C SS =nf, R L =3Ω CH: V EN, 5V/Div, DC CH:, V/Div, DC CH3: I OUT, A/Div, DC TIME: ms/div V DD =5V, V IN =5V C SS =nf, R L =3Ω CH: V EN, 5V/Div, DC CH:, V/Div, DC CH3: I OUT, A/Div, DC TIME: µs/div 7
8 Operating Waveforms(Cont.) Refer to the typical application circuit. T A = 5 o C unless otherwise specified. Enable Shutdown V EN V EN 3 I OUT 3 I OUT V DD =3.3V, V IN =.05V C SS=nF, R L=0.5Ω CH: V EN, 5V/Div, DC CH:, 0.5V/Div, DC CH3: I OUT, A/Div, DC TIME: ms/div V DD =3.3V, V IN =.05V C SS=nF, R L=0.5Ω CH: V EN, 5V/Div, DC CH:, 0.5V/Div, DC CH3: I OUT, A/Div, DC TIME: ms/div Over Current Protection V IN I OUT 3 V DD =5V, V EN =5V C SS=0nF, R L=5Ω to.5 CH: V IN, V/Div, DC CH:, V/Div, DC CH3: I OUT, A/Div, DC TIME: 00µs/Div 8
9 Pin Description NO. PIN NAME Function C VDD VDD voltage input pin for internal control circuitry. B EN Enable input of switch. Logic high turns on switch. The EN pin cannot be left floating. ENB Enable input of switch. Logic low turns on switch. The ENB pin cannot be left floating. A VIN Power supply Input of switch. Connect this pin to an external DC supply. A VOUT Switch output. B GND Ground pin of the circuitry. All voltage levels are measured with respect to this pin. C SS Soft start control of switch. A capacitor from this pin to ground sets the VOUT s rise slew rate. Block Diagram VIN VOUT VDD UVLO Current Limit Control Logic Charge Pump EN OTP GND SS 9
10 Typical Application Circuits V DD=5V VDD VOUT V IN=5V C DD 0.µF VIN APL357S SS C OUT µf CLOAD R Load C IN Optional C IN µf C SS Optional EN/ENB GND Timing Chart 50% 50% V EN t R t F t ON t OFF 90% 90% 50% 50% 0% 0% t D Figure. t ON /t OFF, t R /t F Waveforms 0
11 Soft Start C SS(pF) Soft-Start Time (µs) Test Condition: V DD=5V, C OUT=µF, C IN=µF, R L=00W, Typical Values at T A=5 C V IN=5V V IN=3.3V V IN=.8V V IN=.5V V IN=.V V IN=.05V V IN=0.8V C SS(pF) Soft-Start Time (µs) Test Condition: V DD=3.3V, C OUT=µF, C IN=µF, R L=00W, Typical values at T A=5 C. V IN=3.3V V IN=.8V V IN=.5V V IN=.V V IN=.05V V IN=0.8V Turn on delay Time C SS(pF) Turn on Delay Time (ms) Test Condition: C OUT=µF, C IN=µF, R L=00W, Typical Values at T A=5 C. V DD=V IN=5V V DD=V IN=3.3V Note 4: The table Contains soft-start time values and turn on delay time values measured on a typical device. The soft-start times (t R ) and turn on delay times (t D ) shown are only valid for the power up sequence where V IN and V DD are already in steady state condition, and EN or ENB pin is asserted high or low.
12 Function Description VIN Under-voltage Lockout (UVLO) A under-voltage lockout (UVLO) circuit monitors the VDD pins voltage to prevent wrong logic controls. The UVLO function initiates a soft-start process after the VDD supply voltages exceed rising UVLO voltage threshold during powering on. Current-Limit Protection The APL357S power switch provides the current-limit protection function. During current-limit, the devices limit output current at current-limit threshold. For reliable operation, the device should not be operated in current limit for extended period time. Soft-Start The APL357S Provides an adjustable soft-start circuitry to control rise rate of the output voltage and limit the current surge during start-up. The soft-start time is set with a capacitor from the SS pin to the ground. Over-Temperature Protection When the junction temperature exceeds 50 o C, the internal thermal sense circuit turns off the power FET and allows the device to cool down. When the device s junction temperature cools by 30 o C, the internal thermal sense circuit will enable the device, resulting in a pulsed output during continuous thermal protection. Thermal protection is designed to protect the IC in the event of over temperature conditions. For normal operation, the junction temperature cannot exceed T J =+5 o C.
13 Application Information Input Capacitor A µf or higher ceramic bypass capacitor from VIN to GND, located near the APL357S, is strongly recommended to suppress the ringing during short circuit fault event. When the load current trips the current limit threshold in an over load condition such as a short circuit, hot plug-in or heavy load transient the IC immediately turns off the internal power switch that will cause VIN ringing due to the inductance between power source and VIN. Without the bypass capacitor, the output short may cause sufficient ringing on the input to damage internal control circuitry. Input capacitor is especially important to prevent V IN from ringing too high in some applications where the inductance between power source to VIN is large (ex, an extra bead is added between power source line to VIN for EMI reduction), additional input capacitance may be needed on the input to reduce voltage overshoot from exceeding the absolute maximum voltage of the device during over load conditions. The recommended output capacitance of VOUT is µf at least. Please place the capacitors near the APL357S as close as possible. A bulk output capacitors, placed close to the load, is recommended to support load transient current. For normal operation, do not exceed the maximum operating junction temperature of T J = 5 C. The calculated power dissipation should be less than: The power dissipation depends on operating ambient temperature for fixed T J =5 o C and thermal resistance θ JA. For APL357S packages, the Figure of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power allowed. Power Dissipation (W) P D =(5-5)/ = (W)...T A =5 o C P D =(5-85)/00 = 0.4(W)...T A =85 o C Ambient Temperature ( o C) Figure. Derating Curves for APL357S Package Power Switch The power switch is an N-channel MOSFET with a ultralow R DS(ON). When IC is in shutdown state, the internal parasitic diodes connected from VOUT to VIN will be forward biased. Recommended Minimum Footprint 0.8 Thermal Consideration The APL357S maximum power dissipation depends on the differences of the thermal resistance and temperature between junction and ambient air. The power dissipation P D across the device is: P D = (T J - T A ) / θ JA where (T J -T A ) is the temperature difference between the junction and ambient air. θ JA is the thermal resistance between junction and ambient air. Assuming the T A =5 C and maximum T J =50 C (typical thermal limit threshold), the maximum power dissipation is calculated as: P D(max) =(50-5)/00 =.5(W) (0,0) 0.4 WLCSP.6x Unit: mm 3
14 Package Information WLCSP.6x D E b PIN e A A NX aaa c SEATING PLANE e S Y M B O A L MIN. MAX. A b D E e MILLIMETERS BSC WLCSP.6* MIN INCHES 0.06 BSC MAX aaa
15 Carrier Tape & Reel Dimensions OD0 P0 P P A E OD B A T B0 W F K0 B A0 SECTION A-A SECTION B-B d H A T Application A H T C d D W E F WLCSP (.6x0.76) 78.0 ± MIN MIN. 0. MIN. 8.0± ± ±0.05 P0 P P D0 D T A0 B0 K0 4.0± ±0.0.0± MIN ±0.05.4± ±0.05 (mm) Devices Per Unit Package Type Unit Quantity WLCSP.6x Tape & Reel
16 Taping Direction Information WLCSP.6x USER DIRECTION OF FEED Classification Profile 6
17 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 00 C 50 C 60-0 seconds 50 C 00 C 60-0 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C seconds 7 C seconds See Classification Temp in table See Classification Temp in table 0** seconds 30** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 5 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <350 Volume mm <.5 mm 35 C 0 C.5 mm 0 C 0 C Table. Pb-free Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >000 <.6 mm 60 C 60 C 60 C.6 mm.5 mm 60 C 50 C 45 C.5 mm 50 C 45 C 45 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-, B0 5 Sec, 45 C HOLT JESD-, A Hrs, T j =5 C PCT JESD-, A0 68 Hrs, 00%RH, atm, C TCT JESD-, A Cycles, -65 C~50 C HBM MIL-STD VHBM KV MM JESD-, A5 VMM 00V Latch-Up JESD 78 0ms, tr 00mA 7
18 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindian City, Taipei County 346, Taiwan Tel : Fax :
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Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)
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N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
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Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
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P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
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More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
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P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
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PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
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N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
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More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
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N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
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N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
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P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
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N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
More informationPackage Code P : TO-220FB-3L. Date Code YYXXX WW
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