APL3570. General Description. Features. Applications. Pin Configuration. Simplified Application Circuit. Single Channel Power-Load Switch VOUT 4 5 VIN
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1 Single Channel Power-Load Switch Features Low On-resistance at VIN =3.3V : 35mΩ(typ.) 40mΩ(max.) Low Quiescent Current: 40mA (max.) VIN Supply Voltage Range:.7V to 4V Current Limit Protection Over-Temperature Protection Under Voltage Lockout Protection Reverse Current Blocking when Disabled Deglitched Fault IndicationOutput Internal Soft Start Control Output Discharge when Switch Disabled (AP- L3570A/C) No Output Discharge Function (APL3570B/D) Logic Level Enable Input Lead Free and Green Devices Available (RoHS Compliant) UL Approved-File No. E38191 UL IEC/EN CB Scheme Certified, No. DK UL TUV IEC/EN Certified, No General Description The APL3570 series are 35mΩ(3.3V input) high side load switches with an EN logic input and an OCB fault indication output. The protection features include current-limit protection and over-temperature protection. The current-limit protection can protect down stream devices from catastrophic failure by limiting the output current at current limit threshold during over-load or short-circuit events. The over temperature protection function shuts down the N-channel MOS- FET power switch when the junction temperature rises beyond 150 o C and will automatically turns on the power switch when the temperature drops by 30 o C. The device is available in lead free TDFNX-8 and SOT- 3-5 packages. Applications Notebook and Desktop Computers High-Side Power Protection Switchs Pin Configuration Simplified Application Circuit VOUT 1 GND OCB 3 SOT-3-5 (Top View) 5 VIN 4 EN VIN VIN VOUT Load Controller APL3570 OCB EN GND OCB 1 GND VOUT 3 VOUT 4 TDFNX-8 (Top View) 8 NC 7 EN 6 VIN 5 VIN = Exposed Pad (connected to ground plane for better heat dissipation) ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
2 Ordering and Marking Information APL3570 Assembly Material Handling Code Temperature Range Package Code Function Code Function Code A : Output Current 1A / Built in VOUT discharge function B : Output Current 1A / VOUT discharge function is disabled C : Output Current A / Built in VOUT discharge function D : Output Current A / VOUT discharge function is disabled Package Code B : SOT3-5 Operating Junction Temperature I : - 40 to 85 o C Handling Code TR : Tape & Reel Assembly Material QB : TDFNx-8 G : Halogen and Lead Free Device APL3570A B: 70AX X - Date Code APL3570B B: 70BX X - Date Code APL3570C B: 70CX X - Date Code APL3570D B: 70DX X - Date Code APL3570A QB: L70A X X - Date Code APL3570B QB: L70B X X - Date Code APL3570C QB: L70C X X - Date Code APL3570D QB: L70D X X - Date Code Note : ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-00C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant)and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
3 Absolute Maximum Ratings (Note 1) Symbol Parameter Rating Unit V IN VIN to GND Voltage -0.3 ~ 4.5 V V OUT VOUT to GND Voltage -0.3 ~ 4.5 V V EN EN to GND Voltage -0.3 ~ 4.5 V V OCB OCB to GND Voltage -0.3 ~ 4.5 V T J Maximum Junction Temperature -40 ~ 150 o C T STG Storage Temperature -65 ~ 150 o C T SDR Maximum Lead Soldering Temperature (10 Seconds) 60 o C Note 1: Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Characteristics (Note) Symbol Parameter Typical Value Unit q JA q JC (Note ) Junction-to-Ambient Resistance in free air Junction-to-Case Resistance in free air SOT-3-5 TDFNx-8 SOT-3-5 TDFNx-8 Note : θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air o C/W o C/W Recommended Operating Conditions (Note3) Symbol Parameter Range Unit V IN VIN Input Voltage.7 ~ 4 V VOUT Output Current I OUT APL3570A/B 0 ~ 1 A APL3570C/D 0 ~ V EN_H EN Logic High Input Voltage 1. ~ V IN V V EN_L EN Logic Low Input Voltage 0 ~ 0.4 V C IN Input Capacitor 10 ~ 330 mf C OUT Output Capacitor 10 ~ 330 mf T A Ambient Temperature -40 ~ 85 T J Junction Temperature -40 ~ 15 Note 3: Refer to the typical application circuit. o C o C 3
4 Electrical Characteristics Unless otherwise specified, these specifications apply over V IN =3.3V, V EN =3.3V or and T A = -40 to 85 o C. Typical values are at T A =5 o C. APL3570 Symbol Parameter Test Conditions Min Typ Max Unit SUPPLY CURRENT I IN I SD I RV POWER SWITCH R DS(ON) VIN Supply Current VIN Off-State Supply Current VOUT Leakage Current Reverse Leakage Current Power Switch On Resistance UNDER-VOLTAGE LOCKOUT (UVLO) V IN =3.3V, No load ma V IN =4V, No load ma V IN =.7V to 4V, V EN =0V, T A = 5 o C ma V IN =.7V to 4V, V EN =0V ma V IN =.7V to 4V, V EN =0V, V OUT =0V, T A = 5 o C ma V IN =.7V to 4V, V EN =0V, V OUT =0V ma V IN =0V, V EN =0V, V OUT =.7V to 4V, T A = 5 o C ma V IN =0V, V EN =0V, V OUT =.7V to 4V ma V IN =.7V to 4V, I OUT =1A, T A = 5 o C mw V IN =3.3V, I OUT =1A mw V IN =4V, I OUT =1A mw VIN UVLO Threshold Voltage V IN rising, T A =5 o C..4 V VIN UVLO Hysteresis V CURRENT LIMIT AND SHORT CIRCUIT PROTECTIONS I LIM I SC t B Current Limit Threshold (APL3570A/B) Current Limit Threshold (APL3570C/D) Fold-back Current Limit Threshold (APL3570A/B) Fold-back Current Limit Threshold (APL3570C/D) Fold-back Current Limit Blanking Time OCB OUTPUT PIN V IN =.7V to 4V A V IN =.7V to 4V A V OUT < V IN -1.3V, V IN =.7V to 4V A V OUT < V IN -1.3V, V IN =.7V to 4V A From beginning of soft-start, V IN =.7V to 4V ms OCB Output Low Voltage I OCB =5mA V OCB Input Leakage Current V OCB =4V ma t D(OCB) OCB Deglitch Time OCB assertion ms EN INPUT PIN V EN_H EN Input Logic High V IN =.7V to 4V V V EN_L EN Input Logic Low V IN =.7V to 4V V t D(ON) t D(OFF) t SS EN Input Current ma VOUT Discharge Resistance (APL3570A/C) Turn on Delay Time Turn off Delay Time (APL3570 A/C ) Soft-Start Time OVERT-TEMPERATURE PROTECTION (OTP) V EN =0V, VOUT force 1V W V IN =3.3V, from EN rising edge to V OUT =0.1V ms V IN =4V, from EN rising edge to V OUT =0.1V ms ms No load, C OUT =1mF, V IN =3.3V ms No load, C OUT =1mF, V IN =4V ms T OTP Over-Temperature Threshold (Note 4) T J rising C Over-Temperature Hysteresis (Note 4) C 4
5 Typical Operating Characteristics 8 VIN Supply Current vs. VIN Input Voltage 30 VIN supply current vs. Junction Temperature VIN Supply Current, IIN(μA) RLOAD=OPEN CIN=10μF COUT=10μF TA=5 C VIN Input Voltage, VIN(V) VIN Supply Current, IIN(μA) VIN=3.3V 14 RLOAD=OPEN 1 CIN=10μF COUT=10μF Junction Temperature, TJ ( C) VIN off-state supply current, ISD (μa) VIN off_state supply current vs. Junction Temperature VIN=3.3V RLOAD=OPEN CIN=10μF COUT=10μF Junction Temperature, TJ ( C) EN Logic Threshold Voltage, VEN (V) EN Logic Threshold Voltage vs. Junction Temperature VEN_rising VEN_falling VIN=3.3V RLOAD=OPEN CIN=10μF COUT=10μF Junction Temperature, TJ ( C) Power Switch On Resistance, RDS(on) (mω) Power Switch On Resistance vs. VIN Input Voltage IOUT=1A CIN=10μF COUT=10μF TA=5 C Power Switch On Resistance, RDS(on) (mω) Power Switch On Resistance vs. Junction Temperature VIN=3.3V IOUT=1A CIN=10μF COUT=10μF VIN Input Voltage, VIN(V) Junction Temperature, TJ ( C) 5
6 Typical Operating Characteristics (Cont.) Current Limit Threshold, ILIM (A) Current Limit Threshold vs. VIN Input Voltage APL3570 C/D APL3570 A/B CIN=330μF COUT=10μF TA=5 C VIN Input Voltage, VIN(V) Current Limit Threshold, ILIM (A) Current Limit Threshold vs. Junction Temperature APL3570 A/B APL3570 C/D VIN=3.3V CIN=330μF COUT=10μF Junction Temperature, TJ ( C) Current-Limit Response Time, tcl (ms) Current Limit Response Time vs. Output Peak Current VIN=3.3V CIN=330μF COUT=OPEN TA=5 C Output Peak Current,IOUT (A) 6
7 OperatingWaveforms Refer to the typical application circuit. The test condition is V IN =3.3V, T A = 5 o C unless otherwise specified. VIN Power ON VIN Power OFF V IN 1 V IN 1 V OUT V OUT I OUT 3 I OUT 3 VIN=3.3V, VEN=3.3V, RLOAD=1.65Ω CIN=10μF, COUT=10μF CH1: VIN, V/Div, DC CH: VOUT, V/Div, DC CH3: IOUT, 1A/Div, DC TIME: 1ms/Div VIN=3.3V, VEN=3.3V, RLOAD=1.65Ω CIN=10μF, COUT=10μF CH1: VIN, V/Div, DC CH: VOUT, V/Div, DC CH3: IOUT, 1A/Div, DC TIME: 00ms/Div Enable Power ON Enable Shutdown V EN 1 V EN 1 V OUT V OUT I OUT 3 I OUT 3 VIN=3.3V, VEN=3.3V, RLOAD=1.65Ω CIN=10μF, COUT=10μF CH1: VEN, 5V/Div, DC CH: VOUT, V/Div, DC CH3: IOUT, 1A/Div, DC TIME: 100ms/Div VIN=3.3V, VEN=3.3V, RLOAD=1.65Ω CIN=10μF, COUT=10μF CH1: VEN, 5V/Div, DC CH: VOUT, V/Div, DC CH3: IOUT, 1A/Div, DC TIME: 10ms/Div 7
8 OperatingWaveforms (Cont.) Refer to the typical application circuit. The test condition is V IN =3.3V, T A = 5 o C unless otherwise specified. OCB Response During Short Circuit OCB Response with Ramped Load V OCB V OCB 1 1 V OUT V OUT 3 I OUT 3 I OUT VIN=3.3V, VEN=3.3V, RLOAD=0Ω CIN=330μF, COUT=330μF CH1: VOCB, V/Div, DC CH: VOUT, V/Div, DC CH3: IOUT, A/Div, DC TIME: 1ms/Div VIN=3.3V, VEN=3.3V CIN=330μF, COUT=330μF CH1: VOCB, V/Div, DC CH: VOUT, V/Div, DC CH3: IOUT, 1A/Div, DC TIME: 1ms/Div 8
9 Pin Descriptions PIN SOT-3-5 TDFNx-8 NAME FUNCTION NO. NO. 1 3, 4 VOUT Output Voltage Pin. The output voltage follows the input voltage. When EN is low, the output voltage is discharged by an internal resistor (for APL3570A/C only). GND Ground. 3 1 OCB 4 7 EN Fault Indication Pin. This pin goes low when a current limit, or an over-temperature condition is detected after a 3.ms deglitch time. Enable Input. Pull this pin to high to enable the device and pull this pin to low to disable device. The EN pin cannot be left floating. 5 5, 6 VIN Power Supply Input. Connect this pin to external DC supply. - 8 NC No Connection. - 9 Exposed Pad Connect this pad to system ground plane for good thermal conductivity. Block Diagram Bulk Select VIN VOUT UVLO Charge Pump Current Limit and Fold-back Current Limit EN Gate Driver and Control Logic OCB OTP GND 9
10 Typical Application Circuit V IN R OCB 50kΩ C BULK optional C IN 10mF VIN VOUT APL3570A/B/C/D C OUT 10mF C LOAD Load Controller OCB EN GND 10
11 Function Descriptions VIN Under-voltage Lockout (UVLO) The APL3570 series of power switches are built-in an under-voltage lockout circuit to keep the output shut off until internal circuitry is operating properly. The UVLO circuit has hysteresis and a de-glitch feature so that it will typically ignore undershoot transients on the input. When input voltage exceeds the UVLO threshold, the output voltage starts a soft-start to reduce the inrush current. Reverse Current Blocking Circuit The APL3570 series has a built-in reverse current blocking circuit to prevent a reverse current flowing through the body diode of power switch from the VOUT back VIN pin when power switch disabled. Current Limit Protection The APL3570 series of power switches provide the current limit protection function. During current limit, the devices limit output current at current limit threshold. For reliable operation, the device should not be operated in current limit for extended period time. Fold-back Current Limit Protection When the output voltage drops below VIN-1.3V, which is caused by the over load or short circuit, the devices limit the output current down to a safe level. The short circuit current limit is used to reduce the power dissipation during short circuit condition. If the junction temperature is over the thermal shutdown temperature the device will enter the thermal shutdown. OCBOutput The APL3570 series of power switches provide an opendrain output to indicate that a fault has occurred. When any of current limit or over-temperature protection occurs for a deglitch time of t D(OCB), the OCB goes low. Since the OCB pin is an open-drain output, connecting a resistor to a pull high voltage is necessary. Enable/Disable Pull the EN below 0.4V to disable the device and pull EN above 1.V to enable the device. When the IC is disabled the supply current is reduced to less than 1mA. The enable input is compatible with both TTL and CMOS logic levels. The EN pins cannot be left floating. Over-temperature Protection When the junction temperature exceeds 150 o C, the internal thermal sense circuit turns off the power FET and allows the device to cool down. When the device s junction temperature cools by 30 o C, the internal thermal sense circuit will enable the device, resulting in a pulsed output during continuous thermal protection. Thermal protection is designed to protect the IC in the event of over temperature conditions. For normal operation, the junction temperature cannot exceed T J =+15 o C. 11
12 Package Information TDFNx-8 D A D Pin 1 Corner E L K b E A1 A3 NX aaa c SEATING PLANE e S Y M TDFN*-8 B O L MIN. MAX. MIN. MAX. MILLIMETERS INCHES A A A3 b 0.0 REF REF D D E E e L BSC 0.00 BSC K aaa
13 Package Information SOT-3-5 D e SEE VIEW A e1 b c A A 0.5 A1 E1 E L 0 GAUGE PLANE SEATING PLANE VIEW A S Y M B O L A A1 A b c D E E1 e e1 L MIN MILLIMETERS 0.95 BSC 1.90 BSC MAX SOT-3-5 MIN INCHES BSC BSC MAX Note : 1. Follow JEDEC TO-178 AA.. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. 13
14 Carrier Tape & Reel Dimensions OD0 P0 P P1 A W F E1 K0 B A0 OD1 B A T B0 SECTION A-A SECTION B-B d H A T1 Application A H T1 C d D W E1 F TDFNx ± MIN. Devices Per Unit MIN. 0. MIN. 8.0± ± ±0.05 P0 P1 P D0 D1 T A0 B0 K0 4.0± ±0.10.0± MIN ±0.0.35± ±0.0 Application A H T1 C d D W E1 F SOT ± MIN MIN. 0. MIN. 8.0± ± ±0.05 P0 P1 P D0 D1 T A0 B0 K0 4.0± ±0.10.0± MIN. Package Type Unit Quantity TDFNx-8 Tape & Reel 3000 SOT-3-5 Tape & Reel ± ± ±0.0 (mm) 14
15 Taping Direction Information TDFNx-8 USER DIRECTION OF FEED SOT-3-5 USER DIRECTION OF FEED 15
16 Classification Profile 16
17 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) Average ramp-up rate (T smax to T P ) Liquidous temperature (T L ) Time at liquidous (t L ) 100 C 150 C seconds 150 C 00 C seconds 3 C/second max. 3 C/second max. 183 C seconds 17 C seconds Peak package body Temperature (T p )* See Classification Temp in table 1 See Classification Temp in table Time (t P )** within 5 C of the specified classification temperature (T c ) 0** seconds 30** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 5 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <350 Volume mm 3 >350 <.5 mm 35 C 0 C >.5 mm 0 C 0 C Table. Pb-free Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >000 <1.6 mm 60 C 60 C 60 C 1.6 mm.5 mm 60 C 50 C 45 C >.5 mm 50 C 45 C 45 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-, B10 5 Sec, 45 C HOLT JESD-, A Hrs, T j =15 C PCT JESD-, A Hrs, 100%RH, atm, 11 C TCT JESD-, A Cycles, -65 C~150 C HBM MIL-STD VHBM KV MM JESD-, A115 VMM 00V Latch-Up JESD 78 10ms, 1 tr 100mA 17
18 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No. 11, Lane 18, Sec Jhongsing Rd., Sindian City, Taipei County 3146, Taiwan Tel : Fax :
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Fixed 600kHz Step-UP Converter for White LEDs Features General Description Wide Input Voltage from 2.7V to 6V Fixed 600kHz Switching Frequency Reference Voltage : 0.2V PWM brightness control with wide
More informationGeneral Description. APW7104 BT Mouse PND Instrument V OUT (MLCC)
1.5MHz, 1A Synchronous Buck Regulator Features General Description 1A Output Current Wide 2.7V~6.0V Input Voltage Fixed 1.5MHz Switching Frequency Low Dropout Operating at 100% Duty Cycle 25mA Quiescent
More informationP-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationGeneral Description. Applications. Simplified Application Circuit. Pin Configuration. Li+ Charger Protection IC
Li+ Charger Protection IC Features Provide Input Over-Voltage Protection Programmable Input Over-Current Protection Battery Over-Voltage 4.35V/4.435V Protection Over-Temperature Protection High Immunity
More informationSource and Sink, 2A, Fast Transient Response Linear Regulator VIN VREF VOUT APL5339 VOSNS GND
Source and Sink, A, Fast Transient Response Linear Regulator Features Provide Bi-direction Currents - Sourcing or Sinking Current Up to A Built-in Soft-Start Power-On-Reset Monitoring on VCNTL Pins Fast
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
More informationGeneral Description. Simplified Application Circuit Applications
3A 5V MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic PFM/PWM Mode Operation Adjustable Output Voltage from 0.6V to V PVDD Integrated 65mW High Side / 55mW Low Side MOSFETs
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
More informationAPW7251/A. Pin Configuration. Applications. Simplified Application Circuit. Boost and Dual LDOs with POK
Boost and Dual LDOs with POK Features General Description Wide Input Voltage from V to 5.5V Built-in Soft-start Boost Converter Fixed Output Voltage: APW75:.5V APW75A:.V
More informationFeatures. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
More informationAPX9200. Features. General Description. Applications. Pin Configuration. Single-Phase Full-Wave Motor Driver for Fan Motor
Single-Phase Full-Wave Motor Driver for Fan Motor Features Single Phase Full Wave Fan Driver Built-in Reverse oltage Protection Circuit Built-in ariable Speed Curve Function. It can compensate motors whose
More informationAPL3157. Applications. Pin Configuration. High-Density, +5.5V Capable DPDT Analog Switches
High-Density, +5.5V Capable DPDT Analog Switches Features Negative Audio and Video Signal Capable -0.3V to +5.5V Analog Signal Range Independent from VCC On-Resistance 0.2W (typ) +2.9V to +5.5V Single-Supply
More informationApplications V CNTL V IN V OUT
3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC)) Applicable 0.8V Reference
More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
More informationP HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationP HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D
More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationFeatures. General Description. Applications. 8-PIN Synchronous Buck PWM Controller
8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to
More informationFeatures. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationTechcode TD9516/TD9517/TD9518/TD9519. General Description. Features. Applications. Pin Configurations DATASHEET. USB Power-Distribution Switches
General Description Features The series of power switches are designed for USB applications. The 62m N-channel MOSFET power switch satisfies the voltage drop requirements of USB specification. The protection
More informationSM4337NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/55A, R DS(ON) =7.1mW V GS
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/55, R DS(ON) =7.1mW (max.) @ V GS =V R DS(ON) =mw (max.) @ V GS =4.5V % E S (UIS) test ESD Protection D D D D S S S G DFN5x6-8 Pin 1 Lead Free
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationThree-Phase Full-wave Sine-wave Brushless Motor Driver
Three-Phase Full-wave Sine-wave Brushless Motor Driver Features Three-Phase Full-Wave Sine-Wave Driver One-Hall or Sensor-Less driver control Rpm-Curve Control Rotation Direction Selectable Built-in 5V
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
More informationG D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
More informationAPM9948K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 60V/4A, R DS(ON) = 10V
ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable
More informationPackage Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationSM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationV IN GND V OUT GND GND VIN
Low I Q, Low Dropout 900mA Fixed Voltage Regulator Features Low Noise : 50µV RMS (100Hz to 100kHz) Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current
More informationSingle Feedback High Current DC-DC. 6 pins / Low Cost / High Current and Performance / Low Cost DC-DC Boost. from 2.8 Volt Up to 30 Volt
Single Feedback High Current DC-DC 6 pins / Low Cost / High Current and Performance / Low Cost DC-DC Boost DESCRIPTION from 2.8 Volt Up to 30 Volt is a DC-DC boost converter that provides an accurate constant
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/85A, R DS(ON) =10V = 4.6mW V GS. = 3mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/85, R DS(ON) = 3mW (Max.) @ V GS =V R DS(ON) = 4.6mW (Max.) @ V GS =4.5V Reliable and Rugged D G S Lead Free and Green Devices vailable (RoHS
More informationRT A, Ultra Low Dropout LDO. General Description. Features. Applications. Pin Configurations. Ordering Information RT9025-
2A, Ultra Low Dropout LDO General Description The RT9025 is a high performance positive voltage regulator designed for use in applications requiring very low Input voltage and extremely low dropout voltage
More informationRT A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Pin Configurations. Ordering Information RT9059(- )
RT9059 3A, Ultra-Low Dropout Voltage Regulator General Description The RT9059 is a high performance positive voltage regulator designed for use in applications requiring very low input voltage and very
More informationRT2517B. 1A, 6V, Ultra-Low Dropout Linear Regulator. Features. General Description. Applications. Ordering Information. Marking Information
Sample & Buy 1A, 6V, Ultra-Low Dropout Linear Regulator General Description The is a high performance positive voltage regulator designed for use in applications requiring ultralow input voltage and ultra-low
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RT2516 2A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable General Description The RT2516 is a high performance positive voltage regulator designed for use in applications requiring ultra-low
More informationHandling Code Temperature Range Package Code. Assembly Material
N-Channel Enhancement Mode MOSFET Features 75V/7 a, R DS(ON) = 4.3mW (Max.) @ V GS =V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) Pin Description D S G Top View of TO-263-3
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationRTQ2516-QT. 2A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable. General Description. Features. Applications. Ordering Information
RTQ2516-QT 2A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable General Description The RTQ2516 is a high performance positive voltage regulator designed for use in applications requiring
More informationSM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)
More informationRT2517B. 1A, 6V, Ultra-Low Dropout Linear Regulator. General Description. Features. Applications. Ordering Information. Marking Information
RT2517B 1A, 6V, Ultra-Low Dropout Linear Regulator General Description The RT2517B is a high performance positive voltage regulator designed for use in applications requiring ultralow input voltage and
More informationPackage Code. Handling Code Temperature Range. Assembly Material
Step-Up Converter for 4 Series White LEDs Driver Features General Description.5 V to 6V Input Voltage Range 400mA Internal Switch Current Up to MHz Switching Frequency 70mA Typical No Load Quiescent Current
More informationRT mΩ, 1A Power Multiplexer. Preliminary. General Description. Features. Applications. Ordering Information. Pin Configurations
0mΩ, A Power Multiplexer General Description The is a dual input single output power multiplexer specifically designed to provide seamless voltage transition between two independent power suppliers. Equipped
More informationRT2517A. 1A, 6V, Ultra Low Dropout Linear Regulator. General Description. Features. Applications. Ordering Information. Marking Information
RT2517A 1A, 6V, Ultra Low Dropout Linear Regulator General Description The RT2517A is a high performance positive voltage regulator designed for applications requiring low input voltage and ultra low dropout
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 4V/66A, R DS(ON) =3.2mW (Max.) @ V GS =V R DS(ON) =4mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationAPL431L. General Description. Applications. Symbol. Functional Diagram. Low Voltage Adjustable Precision Shunt Regulator
Low Voltage Adjustable Precision Shunt Regulator Features Precise Reference Voltage to 1.24V Guaranteed.5% or 1% Reference Voltage Tolerance Sink Current Capability, 8uA to 1mA Quick Turn-on Adjustable
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4.
N-Channel Enhancement Mode MOSFET Features 100V/15A, R DS(ON) = 100mW(max.) @ V GS = 10V R DS(ON) = 110mW(max.) @ V GS = 4.5V 100% UIS + R g Tested ESD Protection Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More informationHandling Code Temperature Range
N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices
More informationRT9018A/B. Maximum 3A, Ultra Low Dropout Regulator. General Description. Features. Applications. Marking Information. Ordering Information
RT9018A/B Maximum 3A, Ultra Low Dropout Regulator General Description The RT9018A/B is a high performance positive voltage regulator designed for use in applications requiring very low Input voltage and
More informationSGM2553/SGM2553D Precision Adjustable Current Limited Power Distribution Switches
/D GENERAL DESCRIPTION The and D power distribution switches are intended for applications where precision current limiting is required or heavy capacitive loads and short circuits are encountered and
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