USB Controller OCB 1 GND 2 EN 3 5 VOUT 4 VIN OCB 1 GND 2 5 VOUT ENB 3 4 VIN SOT-23-5 APL3550B/D/F. (Top View)
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1 Power-Distribution Switches Features 7mW (MSOP-8) High Side MOSFET Wide Supply Voltage Range:.7V to 5.5V Current-Limit and Short-Circuit Protections Over-Temperature Protection Fault Indication Output Enable Input UL Approved-File No. E389 Nemko IEC 695- and EN 695- CB_Scheme Certified, No TUV IEC 695- and EN 695- Certified, No Lead Free and Green Devices Available (RoHS Compliant) General Description The APL355/ series of power switches integrate a 7mΩ N-channel MOSFET power switch, an enable input pin, a fault flag and some protection functions into a single package. The protection features include current-limit protection, short-circuit protection, and over-temperature protection. The device limits the output current at current limit threshold level. When V OUT drops below -V, the devices limit the current to a lower and safe level. The over-temperature protection limits the junction temperature below 4 o C in case of short circuit or over load conditions. Other features include a deglitched OCB output to indicate the fault condition and an enable input to enable or disable the device. Applications Notebook and Desktop Computers USB Ports High-Side Power Protection Switchs MHL Ports Simplified Application Circuit 5V USB Controller VIN VOUT APL355A/B/C/D/E/F APL355A/B/C/D OCB EN/ENB GND USB Port Pin Configurations GND VIN VIN 3 EN 4 8 VOUT 7 VOUT 6 VOUT 5 OCB OCB GND EN 3 5 VOUT 4 VIN VOUT GND OCB 3 5 VIN 4 EN SOP-8/MSOP-8 APL355A/C (Top View) SOT-3-5 APL355A/C/E (Top View) SOT-3-5 APL355A/C (Top View) GND VIN 8 VOUT 7 VOUT OCB GND 5 VOUT VOUT GND 5 VIN VIN 3 6 VOUT ENB 3 4 VIN OCB 3 4 ENB ENB 4 5 OCB SOP-8/MSOP-8 APL355B/D (Top View) SOT-3-5 APL355B/D/F (Top View) SOT-3-5 APL355B/D (Top View) ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 Ordering and Marking Information APL355 APL355 APL355A K: APL355A XXXXX Assembly Material Handling Code Temperature Range Package Code Output Current/EN Function Package Code K : SOP-8 X : MSOP-8 B : SOT-3-5 Operating Ambient Temperature Range I : -4 to 85 o C Handling Code TR : Tape & Reel Output Current/EN Function A : A/Active High B : A/Active Low C : A/Active High D : A/Active Low E :.3A/Active High F :.3A/Active Low Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code APL355A X: L55A XXX XX XXXXX - Date Code APL355A B: 5AX X - Date Code APL355A B: 5AX X - Date Code Note : ANPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-D for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant)and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). Absolute Maximum Ratings (Note ) Symbol Parameter Rating Unit VIN Input Voltage (VIN to GND) -.3 ~ 7 V V OUT VOUT to GND Voltage -.3 ~ 7 V V ENB, V EN EN, ENB to GND Voltage -.3 ~ 7 V V OCB OCB to GND Voltage -.3 ~ 7 V T J Maximum Junction Temperature 5 T STG Storage Temperature -65 ~ 5 T SDR Maximum Lead Soldering Temperature, Seconds 6 Note: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Characteristics Symbol Parameter Typical Value Unit o C o C o C θ JA (Note ) Junction-to-Ambient Resistance in Free Air SOP-8 MSOP-8 SOT-3-5 Note : θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air o C/W
3 Recommended Operating Conditions (Note 3) Symbol Parameter Range Unit VIN Input Voltage.7 ~ 5.5 V OUT Output Current (APL355A/B, APL355A/B) ~ I OUT OUT Output Current (APL355C/D, APL355C/D) ~ OUT Output Current (APL355E/F) ~.3 T A Ambient Temperature -4 ~ 85 T J Junction Temperature -4 ~ 5 Note 3 : Refer to the typical application circuit A o C o C Electrical Characteristics Unless otherwise specified, these specifications apply over =5V, V EN =5V or V ENB =V and T A = -4 ~ 85 o C. Typical values are at T A =5 o C. Symbol Parameter Test Conditions SUPPLY CURRENT APL355/ Min. Typ. Max. Unit VIN Supply Current No load, V EN=V or V ENB=5V - - µa No load, V EN=5V or V ENB=V - 65 µa Leakage Current VOUT=GND, V EN=V or V ENB=5V - - µa POWER SWITCH Reverse Leakage Current VIN=GND, V OUT=5V, V EN=V or V ENB=5V - - µa R DS(ON) Power Switch On Resistance I OUT=.5A, T A= 5 o C SOP-8 Package SOT-3-5 Package MSOP-8 Package mω UNDER-VOLTAGE LOCKOUT (UVLO) VIN UVLO Threshold Voltage rising, T A= -4 ~ 85 o C V VIN UVLO Hysteresis -. - V CURRENT-LIMIT AND SHORT-CIRCUIT PROTECTIONS I LIM Current Limit Threshold APL355A/B, APL355A/B, =.7V to 5.5V, T A= -4 ~ 85 o C A APL355C/D, APL355C/D, =.7V to 5.5V, T A= -4 ~ 85 o C..5. A APL355E/F, =.7V to 5.5V, T A= -4 ~ 85 o C A I SHORT Short-Circuit Output Current APL355A/B, APL355A/B, =.7V to 5.5V A APL355C/D, APL355C/D, =.7V to 5.5V A APL355E/F, =.7V to 5.5V A 3
4 Electrical Characteristics (Cont.) Unless otherwise specified, these specifications apply over =5V, V EN =5V or V ENB =V and T A = -4 ~ 85 o C. Typical values are at T A =5 o C. Symbol Parameter Test Conditions OCB OUTPUT PIN APL355/ Min. Typ. Max. Unit OCB Output Low Voltage I OCB=5mA -..4 V OCB Leakage Current V OCB=5V - - µa t D(OCB) OCB Deglitch Time OCB assertion, T A= -4 ~ 85 o C 5 ms EN OR ENB INPUT PIN V IH Input Logic HIGH =.7V to 5V - - V V IL Input Logic LOW =.7V to 5V V Input Current - - µa t D(ON) Turn On Delay Time µs t D(OFF) Turn Off Delay Time µs t SS Soft-Start Time No load, C OUT=µF, =5V µs OVER-TEMPERATURE PROTECTION (OTP) TOTP Over-Temperature Threshold T J rising C Over-Temperature Hysteresis - - C 4
5 Typical Operating Characteristics Switch On Resistance, R DS(on) (mω) Switch On Resistance vs. Junction Temperature =5V, I OUT =.5A, =µf/x7r, C OUT =µf/x7r SOP8 MSOP8 SOT-3-5 Switch On Resistance, R DS(on) (mω) Switch On Resistance vs. Input Voltage I OUT =.5A, =µf/x7r, C OUT =µf/ X7R, T A =5 o C SOP8 MSOP8 SOT Junction Temperature ( o C) Input Voltage (V) Supply Current vs. Junction Temperature 6 Supply Current vs. Input Voltage Supply Current, I CC (µa) =5V, R LOAD = Open, =C OUT =33µF/ Junction Temperature ( o C) Supply Current, I CC (µa) R LOAD = Open, =C OUT =33µF/ Input Voltage (V) 3. Current Limit Threshold vs. Junction Temperature.8 Current Limit Threshold vs. Input Voltage Current Limit Threshold, ILIM (A) =5V APL355A/B APL355C/D Junction Temperature ( o C) Current Limit Threshold, ILIM (A) APL355A/B APL355C/D. T A =5 o C Input Voltage (V) 5
6 Typical Operating Characteristics (Cont.) Current-Limit Response (µs Current-Limit Response vs. Output Peak Current APL355A/B, = 5V, T A =5 o C Current-Limit Response (µs) Current-Limit Response vs. Output Peak Current APL355C/D, = 5V, T A =5 o C Output Peak Current (A) Output Peak Current (A) Short-Circuit Output Current, I SHORT (A) Short-Circuit Output Current vs. Input Voltage = 5V, T A =5 o C Input Voltage (V) EN Pin Threshold Voltage, V EN (V) EN Pin Threshold Voltage vs. Junction Temperature EN Rising EN Falling. R LOAD =5Ω, = C OUT =33µF/Elctrolytic Junction Temperature ( o C) EN Pin Threshold Voltage, V EN (V) EN Pin Threshold Voltage vs. Input Voltage EN Rising EN Falling =5V, R LOAD =5Ω, = C OUT =33µF/Elctrolytic, T A =5 o C Input Voltage (V) Turn-Off Leakage Current, I LEAK (µa) Turn-Off Leakage Current vs. Junction Temperature =5V, Shut-Down mode, R LOAD =Ω, = C OUT =33µF/Elctrolytic Junction Temperature ( o C) 6
7 Typical Operating Characteristics (Cont.) Switch Off Supply Current, I CC(off) (µa) Switch Off Supply Current vs. Junction Temperature = 5V, R LOAD = Open, = C OUT =33µF/Elctrolytic Junction Temperature ( o C) OCB Deglitch Time, T D(OCB) (ms) OCB Deglitch Time vs. Junction Temperature R LOAD =Ω, = C OUT =33µF/Elctrolytic Junction Temperature ( o C) 8 OCB Deglitch Time vs. Input Voltage 3. UVLO Threshold Voltage vs. Junction Temperature OCB Deglitch Time, T D(OCB) (ms) R LOAD =Ω, = C OUT =33µF/Elctrolytic Input Voltage (V) UVLO Threshold Voltage, V UVLO (V) UVLO Rising UVLO Falling. I OUT =5mA, = C OUT =33µF/Elctrolytic Junction Temperature ( o C) Turn-Off Falling Time, t F (µs) 5 5 Turn-Off Falling Time vs. Junction Temperature = 5V, R LOAD =3Ω, = 33µF/Elctrolytic, C OUT =µf/x7r Turn-On Rising Time, t R (µs) Turn-On Rising Time vs. Junction Temperature = 5V, R LOAD =3Ω, = 33µF/Elctrolytic, C OUT =µf/x7r Junction Temperature ( o C) Junction Temperature ( o C) 7
8 Typical Operating Characteristics (Cont.) Output Voltage, VOUT (V) Output Voltage vs. Output Current APL355A/B, = 5V, T A =5 o C Output Voltage, VOUT (V) Output Voltage vs. Output Current APL355C/D, = 5V, T A =5 o C Output Current (A) Output Current (A) 8
9 Operating Waveforms The test condition is =5V, T A = 5 o C unless otherwise specified. Turn On Response Turn Off Response V ENB V ENB V OUT V OUT =5V, R LOAD =3Ω, =33µF/Electrolytic, C OUT =µf/electrolytic CH: V ENB, 5V/Div, DC CH: V OUT, V/Div, DC TIME: µs/div =5V, R LOAD =3Ω, =33µF/Electrolytic, C OUT =µf/electrolytic CH: V ENB, 5V/Div, DC CH: V OUT, V/Div, DC TIME: µs/div UVLO at Rising UVLO at Falling V OUT V OUT =5V, R LOAD =3Ω, =33µF/Electrolytic, C OUT =µf/electrolytic CH:, V/Div, DC CH: V OUT, V/Div, DC TIME:ms/Div =5V, R LOAD =3Ω, =33µF/Electrolytic, C OUT =µf/electrolytic CH:, V/Div, DC CH: V OUT, V/Div, DC TIME:5ms/Div 9
10 Operating Waveforms (Cont.) The test condition is =5V, T A = 5 o C unless otherwise specified. OCB Response During Short Circuit OCB Response During Over Load V BAT V ENB V ENB V CHRIN V OCB V OCB 3 I OUT 3 I OUT =5V, R LOAD =Ω, =C OUT =33µF/ Electrolytic CH: V ENB, 5V/Div, DC CH: V OCB, 5V/Div, DC CH3: I OUT, A/Div, DC TIME: 5ms/Div =5V, R LOAD =Ω, =C OUT =33µF/ Electrolytic CH: V ENB, 5V/Div, DC CH: V OCB, 5V/Div, DC CH3: I OUT, A/Div, DC TIME: 5ms/Div OCB Response with Ramped Load Load-Transient Response V OCB V OUT V OUT I OUT 3 I OUT =5V, =C OUT =33µF/Electrolytic CH: V OUT, 5V/Div, DC CH: V OCB, 5V/Div, DC CH3: I OUT, A/Div, DC TIME: ms/div =5V, R LOAD =kω to.ω, =C OUT =33µF/ Electrolytic CH: V OUT, V/Div, DC CH: I OUT, A/Div, DC TIME: ms/div
11 Pin Description NO. PIN SOP-8/ SOT-3-5 MSOP-8 APL355 APL355 NAME FUNCTION GND Ground VIN Power Supply Input. Connect this pin to external DC supply EN (A/C/E) ENB (B/D/F) 5 3 OCB VOUT Enable Input. Pulling this pin to high will enable the device and pulling this pin to low will disable device. The EN pin cannot be left floating. Enable Input. Pulling this pin to high will disable the device and pulling this pin to low will enable device. The ENB pin cannot be left floating. Fault Indication Pin. This pin goes low when a current limit or an over-temperature condition is detected after a ms deglitch time. Output Voltage Pin. The output voltage follows the input voltage. When the device is enable. Block Diagram VIN VOUT UVLO Charge Pump Current Limit Short-Circuit Protection EN/ ENB Gate Driver and Control Logic OCB OTP GND
12 Typical Application Circuit 3.3V 5V µf 5kΩ VIN VOUT APL355A/B/C/D/E/F APL355A/B/C/D C BYP.µF C OUT 5µF V OUT Controller OCB EN/ENB GND
13 Function Description VIN Under-Voltage Lockout (UVLO) The APL355/ series of power switches have a built-in under-voltage lockout circuit to keep the output shutting off until internal circuitry is operating properly. The UVLO circuit has hysteresis and a de-glitch feature so that it will typically ignore undershoot transients on the input. When input voltage exceeds the UVLO threshold, the output voltage starts a soft-start to reduce the inrush current. Power Switch The power switch is an N-channel MOSFET with a low R DS(ON). The internal power MOSFET does not have the body diode. When IC is off, the MOSFET prevents a current flowing from the VOUT back to VIN and VIN to VOUT. compatible with both TTL and CMOS logic levels. The EN/ENB pin cannot be left floating. Over-Temperature Protection When the junction temperature exceeds 4 o C, the internal thermal sense circuit turns off the power FET and allows the device to cool down. When the device s junction temperature cools by o C, the internal thermal sense circuit will enable the device, resulting in a pulsed output during continuous thermal protection. Thermal protection is designed to protect the IC in the event of over temperature conditions. For normal operation, the junction temperature cannot exceed T J =+5 o C. Current-Limit Protection The APL355/ series of power switches provide the current-limit protection function. During current limit, the devices limit output current at current limit threshold. For reliable operation, the device should not be operated in current limit for extended period. Short-Circuit Protection When the output voltage drops below -V, which is caused by an over-load or a short-circuit, the devices limit the output current down to a safe level. The short-circuit current limit is used to reduce the power dissipation during short-circuit conditions. If the junction temperature reaches over-temperature threshold, the device will enter the thermal shutdown. OCB Output The APL355/ series of power switches provide an open-drain output to indicate that a fault has occurred. When any of current-limit or over-temperature protection occurs for a deglitch time of t D(OCB), the OCB goes low. Since the OCB pin is an open-drain output, connecting a resistor to a pull high voltage is necessary. Enable/Disable Pull the ENB above V or EN below.8v will disable the device, and pull ENB pin below.8v or EN above V will enable the device. When the IC is disabled, the supply current is reduced to less than µa. The enable input is 3
14 Application Information Input Capacitor A µf ceramic bypass capacitor from to GND, located near the APL355/, is strongly recommended to suppress the ringing during short circuit fault event. Without the bypass capacitor, the output short may cause sufficient ringing on the input (from supply lead inductance) to damage internal control circuitry. Output Capacitor A low-esr 5µF aluminum electrolytic or tantalum between V OUT and GND is strongly recommended to reduce the voltage droop during hot-attachment of downstream peripheral. Higher-value output capacitor is better when the output load is heavy. Additionally, bypassing the output with a.µf ceramic capacitor improves the immunity of the device to short-circuit transients. Layout Consideration The PCB layout should be carefully performed to maximize thermal dissipation and to minimize voltage drop, droop and EMI. The following guidelines must be considered:. Please place the input capacitors near the VIN pin as close as possible.. Output decoupling capacitors for load must be placed near the load as close as possible for decoupling highfrequency ripples. 3. Locate APL355/ and output capacitors near the load to reduce parasitic resistance and inductance for excellent load transient performance. 4. The negative pins of the input and output capacitors and the GND pin must be connected to the ground plane of the load. 5. Keep and V OUT traces as wide and short as possible. 4
15 Package Information SOP-8 D SEE VIEW A E E h X 45 e b c A A A VIEW A L.5 GAUGE PLANE SEATING PLANE S Y M SOP-8 B O L MIN. MAX. A.75 MIN. MAX..69 MILLIMETERS INCHES A A b c D E E e.7 BSC.5 BSC h L Note:. Follow JEDEC MS- AA.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side. 5
16 Package Information MSOP-8 D SEE VIEW A A A.5 E E e b c A L GAUGE PLANE SEATING PLANE S Y M MILLIMETERS B O L MIN. MAX. A A...5 A b c D E E e L BSC.4.8 MSOP-8 VIEW A MIN.. INCHES.6 BSC MAX Note:. Follow JEDEC MO-87 AA.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 5 mil per side. 6
17 Package Information SOT-3-5 D e SEE VIEW A e b c A A.5 A E E L GAUGE PLANE SEATING PLANE VIEW A S Y M B O L A A A b c D E E e e L.3 MIN MILLIMETERS.95 BSC.9 BSC MAX SOT-3-5 MIN INCHES.37 BSC.75 BSC MAX Note :. Follow JEDEC TO-78 AA.. Dimension D and E do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed mil per side. 7
18 Carrier Tape & Reel Dimensions OD P P P A W F E B A OD B A T B K SECTION A-A SECTION B-B d H A T Application A H T C d D W E F SOP MIN MIN.. MIN P P P D D T A B K MIN Application A H T C d D W E F MSOP MIN MIN.. MIN P P P D D T A B K MIN Application A H T C d D W E F SOT MIN MIN.. MIN P P P D D T A B K MIN (mm) 8
19 Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 5 MSOP-8 Tape & Reel 3 SOT-3-5 Tape & Reel 3 Taping Direction Information SOP-8 USER DIRECTION OF FEED MSOP-8 USER DIRECTION OF FEED SOT-3-5 USER DIRECTION OF FEED 9
20 Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) C 5 C 6- seconds 5 C C 6- seconds Average ramp-up rate (T smax to T P) Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 3 C/second max. 3 C/second max. 83 C 6-5 seconds 7 C 6-5 seconds See Classification Temp in table See Classification Temp in table ** seconds 3** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 5 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum.
21 Classification Reflow Profiles (Cont.) Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Volume mm 3 35 <.5 mm 35 C C.5 mm C C Table. Pb-free Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 > <.6 mm 6 C 6 C 6 C.6 mm.5 mm 6 C 5 C 45 C.5 mm 5 C 45 C 45 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-, B 5 Sec, 45 C HOLT JESD-, A8 Hrs, Tj=5 C PCT JESD-, A 68 Hrs, %RH, atm, C TCT JESD-, A4 5 Cycles, -65 C~5 C HBM MIL-STD VHBM KV MM JESD-, A5 VMM V Latch-Up JESD 78 ms, tr ma Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindian City, Taipei County 346, Taiwan Tel : Fax :
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General Description Features The series of power switches are designed for USB applications. The 62m N-channel MOSFET power switch satisfies the voltage drop requirements of USB specification. The protection
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Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
More informationPin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
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Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
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P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell
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1.5MHz, 1A Synchronous Buck Regulator Features General Description 1A Output Current Wide 2.7V~6.0V Input Voltage Fixed 1.5MHz Switching Frequency Low Dropout Operating at 100% Duty Cycle 25mA Quiescent
More informationPackage Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
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High-Performance, High-Current DrMOS Power Module Features 4.5V ~ 5.5V Input Range for VCC & PVCC 4.5V ~ 25V Input Range for Power-On-Reset Monitoring on VCC Pin APW8703-Up to 10A (peak), 8A (continuous)
More informationFeatures. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
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Fixed 600kHz Step-UP Converter for White LEDs Features General Description Wide Input Voltage from 2.7V to 6V Fixed 600kHz Switching Frequency Reference Voltage : 0.2V PWM brightness control with wide
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3A 5V MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic PFM/PWM Mode Operation Adjustable Output Voltage from 0.6V to V PVDD Integrated 65mW High Side / 55mW Low Side MOSFETs
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Source and Sink, A, Fast Transient Response Linear Regulator Features Provide Bi-direction Currents - Sourcing or Sinking Current Up to A Built-in Soft-Start Power-On-Reset Monitoring on VCNTL Pins Fast
More informationApplications VIN LX APW8825 NC FB PGND AGND
3A 5V 1MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic Skip/PWM Mode Operation Adjustable Output Voltage from 0.6V to VIN Integrated 110mW High side 80mW Low Side MOSFET Low
More informationSGM2576/SGM2576B Power Distribution Switches
/B GENERAL DESCRIPTION The and B are integrated typically 100mΩ power switch for self-powered and bus-powered Universal Series Bus (USB) applications. The and B integrate programmable current limiting
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
More informationP-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationApplications V CNTL V IN V OUT
3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC)) Applicable 0.8V Reference
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RT9728A 120mΩ, 1.3A Power Switch with Programmable Current Limit General Description The RT9728A is a cost effective, low voltage, single P-MOSFET high side power switch IC for USB application with a programmable
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
More informationRT9728C. 120mΩ, 1.3A Power Switch with Programmable Current Limit. General Description. Features. Applications. Pin Configurations
RT9728C 120mΩ, 1.3A Power Switch with Programmable Current Limit General Description The RT9728C is a cost effective, low voltage, single P-MOSFET high-side power switch IC for USB application with a programmable
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
More informationAPW7251/A. Pin Configuration. Applications. Simplified Application Circuit. Boost and Dual LDOs with POK
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More informationFeatures. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
More informationSGM2553/SGM2553D Precision Adjustable Current Limited Power Distribution Switches
/D GENERAL DESCRIPTION The and D power distribution switches are intended for applications where precision current limiting is required or heavy capacitive loads and short circuits are encountered and
More informationRT9728A. 120mΩ, 1.3A Power Switch with Programmable Current Limit. General Description. Features. Applications. Pin Configuration
120mΩ, 1.3A Power Switch with Programmable Current Limit General Description The is a cost effective, low voltage, single P-MOSFET high-side power switch IC for USB application with a programmable current
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Single-Phase Full-Wave Motor Driver for Fan Motor Features Single Phase Full Wave Fan Driver Built-in Reverse oltage Protection Circuit Built-in ariable Speed Curve Function. It can compensate motors whose
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5V to V Synchronous Buck Controller Features Wide Operation Supply Voltage from 5V to V Power-On-Reset Monitoring on VCC Excellent Reference Voltage Regulations - 0.8V Internal Reference - ±% Over-Temperature
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
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APW765 5V to V Synchronous Buck Controller Features Wide Operation Supply Voltage from 5V to V Power-On-Reset Monitoring on VCC Excellent Reference Voltage Regulations - 0.8V Internal Reference - ±% Over
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PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
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More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
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More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
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Step-Up Converter for 4 Series White LEDs Driver Features General Description.5 V to 6V Input Voltage Range 400mA Internal Switch Current Up to MHz Switching Frequency 70mA Typical No Load Quiescent Current
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N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
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N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
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ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable
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Low I Q, Low Dropout 900mA Fixed Voltage Regulator Features Low Noise : 50µV RMS (100Hz to 100kHz) Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current
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N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
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Single Step-up DC/DC Controller Features General Description 2.5 to 5.5V Input Voltage Range Adjustable Frequency: Maximum 1MHZ Incorporates Soft-Start Function Built-in Short-Circuit Detection Circuit
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N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
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N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
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N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
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N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
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More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
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N-Channel Enhancement Mode MOSFET Features Pin Description 3V/55, R DS(ON) =7.1mW (max.) @ V GS =V R DS(ON) =mw (max.) @ V GS =4.5V % E S (UIS) test ESD Protection D D D D S S S G DFN5x6-8 Pin 1 Lead Free
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