Features. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
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- Emil Nichols
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1 Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free and Green Devices Available (RoHS Compliant) Applications The APX9132, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. A 2.5 volt to 3.5 volt operation and an unique clocking scheme reduce the average operating power requirements, either a north or south pole of sufficient flux will turn the output on; in the absence of a magnetic field, the output is off. The polarity independence and minimal power requirement allow this device to be easily replaced reed switch for superior for signal conditioning. Advanced CMOS processing is used to take advantage of low-voltage and low-power requirements, SOT-23-3 package provided a optimized package for most applications. Micro Switch Handheld Wireless Application Wake Up Switch Clamp Shell Type Application Switch Magnet Switch in Low Duty Cycle Applications Pin Configuration GND APX9132 VDD VOUT Ordering and Marking Information SOT-23-3 APX9132 Assembly Material Handling Code Temperature Range Package Code Package Code A : SOT-23-3 AT : TSOT-23-3 Temperature Range I : -4 to 85 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APX9132 A/AT: X32X X - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 1% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
2 Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Rating Unit Supply Voltage 5 V V OUT Output Voltage 5 V I OUT Output Current ±1 ma T J Junction Temperature Range 15 C T STG Storage Temperature Range -65 to +15 C Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Characteristics Symbol Parameter Typical Value Unit θ JA P D (Note 2) Junction-to-Ambient Resistance in Free Air SOT-23 Power Dissipation, T A=25 o C TSOT-23 SOT-23 TSOT Note 2: θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. ο C/W W Electrical Characteristics T A = 25 C, =3V unless otherwise noted Symbol Characteristic Test Conditions APX9132 Min. Typ. Max. Unit Supply Voltage Range Operating V Average µa I DD Supply Current Awake ma Sleep µa I OFF Output Leakage Current V OUT=3.5V, B RPN<B<B RPS µa V OH Output High Voltage I OUT=-1mA V V OL Output Low Voltage I OUT=1mA mv t awake Wake up Time µs t period Period ms d.c. Duty Cycle % f c Chopping Frequency khz 2
3 Magnetic Characteristics T A = 25 C, =3V unless otherwise noted Symbol Characteristic Test Conditions APX9132 Min. Typ. Max. Unit B OPS G Operate Points G B OPN B RPS G Release Points G B RPN B hys Hysteresis G 3
4 Typical Operating Characteristics Switching Points vs. Ambient Temperature Switching Points vs. Supply Voltage 4 3 B OPS 4 3 B OPS T A =25 o C Switching Points (G) B RPS B RPN Switching Points (G) B RPS B RPN -3 B OPN Ambient Temperature ( C) B OPN Supply Voltage (V) Average Supply Current (µa) Average Supply Current vs. Ambient Temperature Ambient Temperature ( C) Average Supply Current (µa) Average Supply Current vs.supply Voltage 2 T A =25 o C Supply Voltage (V) 4
5 Typical Operating Characteristics (Cont.) Output Source Current vs. -V OUT Voltage 5 Output Sink Current vs. Output Low Voltage 1 Output Source Current (ma) =5V 4 3 =4V 2 =3V Output Sink Current (ma) 9 8 =4V 7 6 =5V 5 =3V V OUT Voltage (V) Output Low Voltage (V) Output Switch Waveform Output Switch Waveform Output Voltage (.5V/div) V OUT (.5V/div) =3V CL=12pF Output Voltage (.5V/div) =3V CL=12pF V OUT (.5V/div) Time (5µs/div) Time (5µs/div) 5
6 Pin Description PIN NO. NAME 1 VDD Power Input FUNCTION 2 VOUT When a magnetic field enters the hall element and exceeds the operate point B OPS (or less than B OPN) the output turns on (output is low). When the magnetic field is below the release point B RPS (or above B RPN), the output turns off (output is high). 3 GND Ground Connection Block Diagram VDD Awake & Sleep Timing Logic Hall Plane Dynamic Offset Cancellation Latch Circuit VOUT Chopper Amplifier Hysteresis Control GND Typical Application Circuit VOUT VDD + APX9132 GND.1µF - 2.5V-3.5V SOT-23 (Top View) 6
7 Function Description Operation The output of APX9132 switches low (turn-on) when in presence of strong flux density facing the marked side of package exceeds the operate point B OPS (or is less than B OPN ). After turn-on, the output is capable of sinking up to 1mA and the output voltage is low (turn-on). In absence of flux density below the release point B RPS (or increased above B RPN ), the APX9132 output switches high (turns off). After turn-off, the output is capable of sourcing up to 1mA and the output voltage is high (turn-off). The difference in the magnetic operated and released point is the hysteresis (B hys ) of the device. This built-in hysteresis allows clean switching of the output even in the presence of external mechanical bouncing vibration and electrical noise. 5V MAX B OPN OUTPUT OFF B OPS OUTPUT VOLTAGE B RPN B RPS OUTPUT ON -B +B MAGNETIC FLUX 7
8 Application Information It is strongly recommended that an external bypass capacitor be connected (is close to the Hall sensor) between the supply and ground of the device to reduce both external noise and noise generated by the chopper-stabilization technique. This is especially true due to the relatively high impedance of battery supplies. Pole-independent The pole-independent sensing technique allows for operation with either a north or south pole magnet orientation, enhancing the manufacturability of the device. The state-of-the-art technology provides the same output polarity for either pole in presence. Awake & Sleep Internal awake & sleep timing block circuit activates the sensor for 18 µs and deactivates it for the remainder of the period (6 ms). A short awake time allows for stabilization prior to the sensor sampling and data latching on the falling edge of the timing pulse. While in sleep cycle, the output is latched in its previous state. Chopper Stabilized Technique The chopper stabilized technique cancels the mismatching of the hall element, the amplifier offset voltage and temperature sensitive drift by the dynamic offset cancellation and switched capacitor technique. This technique produces devices have an extremely stable Hall output voltage, therefore, the magnetic switch points are stable. 8
9 Package Information SOT-23-3 D e SEE VIEW A A2 A.25 E1 E b c e1 A1 L GAUGE PLANE SEATING PLANE S Y M B O L A A1 A2 b c D E E1 e e1 L.3 MIN MILLIMETERS.95 BSC 1.9 BSC MAX SOT-23-3 VIEW A MIN INCHES.37 BSC.75 BSC MAX Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 1 mil per side. 9
10 Package Information TSOT-23-3 D e SEE VIEW A E1 E b c e1 A2 A1 A L.25 GAUGE PLANE SEATING PLANE VIEW A S Y M MILLIMETERS B O L MIN. MAX. A A1 c D E E1 e e1 L A b BSC 1.9BSC.3.6 TSOT-23-3 MIN..1 INCHES.37 BSC MAX BSC Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 1 mil per side. 1
11 Carrier Tape & Reel Dimensions OD P P2 P1 A E1 OD1 B A T B W F K B A SECTION A-A SECTION B-B d H A T1 Application A H T1 C d D W E1 F SOT MIN MIN. 2.2 MIN P P1 P2 D D1 T A B K MIN Application A H T1 C d D W E1 F TSOT MIN MIN. 2.2 MIN P P1 P2 D D1 T A B K MIN Devices Per Unit Package Type Unit Quantity SOT-23-3 Tape & Reel 3 TSOT-23-3 Tape & Reel 3 11
12 Taping Direction Information (T)SOT-23-3 USER DIRECTION OF FEED Classification Profile 12
13 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 1 C 15 C 6-12 seconds 15 C 2 C 6-12 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Table 2. Pb-free Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B12 5 Sec, 245 C HOLT JESD-22, A18 1 Hrs, 125 C PCT JESD-22, A Hrs, 1%RH, 2atm, 121 C TCT JESD-22, A14 5 Cycles, -65 C~15 C ESD MIL-STD VHBM 2KV, VMM 2V Latch-Up JESD 78 1ms, 1 tr 1mA 13
14 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan Tel : Fax : Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindian City, Taipei County 23146, Taiwan Tel : Fax :
Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description
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Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
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OUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.
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General Description. Applications 16 PGND OUT2 2 OUT OUT1 VCC 3 MIN 4 SET 5 NC 2 VCC 3 MIN 4 SET 5 14 SGND 13 CT 12 NC OSC 6 FG 7 OSC 6 FG 7
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Features. P-Channel Enhancement Mode MOSFET
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V OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
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General Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8
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Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
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General Description. Lead Free and Green Device Available (RoHS Compliant) Pin Configuration
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Package Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
P-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
Features. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
Package Code. Handling Code. Assembly Material
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Ultra-Low On-Resistance, Power Load Switch with Soft Start V OUT
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General Description. 5V Adapter or USB IN
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Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
Package Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
General Description. Features. Applications. 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator
3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Compatible with APL593 Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC))
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
Features. General Description. Simplified Application Circuit. Applications. Pin Configuration. 2A, Ultra Low Dropout (0.24V Typical) Linear Regulator
2A, Ultra Low Dropout (0.24V Typical) Linear Regulator Features Ultra Low Dropout - 0.24V (typical) at 2A Output Current 0.8V Reference Voltage High Output Accuracy - 1.5% Over Line, Load, and Temperature
Features. General Description. Applications. Pin Configuration. Simplified Application Circuit. Li+ Charger Protection IC with Integrated P-MOSFET
Li+ Charger Protection IC with Integrated P-MOSFET Features Input Over-Voltage Protection Input Over-Current Protection Battery Over-Voltage Protection High Immunity of False Triggering High Accuracy Protection
General Description. Features. Simplified Application Circuit. Applications. Pin Configuration. 2A, Ultra Low Dropout (0.24V Typical) Linear Regulator
2A, Ultra Low Dropout (0.2V Typical) Linear Regulator Features Ultra Low Dropout - 0.2V (Typical) at 2A Output Current 0.8V Reference Voltage High Output Accuracy -.5% Over Line, Load, and Temperature
General Description. APW7104 BT Mouse PND Instrument V OUT (MLCC)
1.5MHz, 1A Synchronous Buck Regulator Features General Description 1A Output Current Wide 2.7V~6.0V Input Voltage Fixed 1.5MHz Switching Frequency Low Dropout Operating at 100% Duty Cycle 25mA Quiescent
Features. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
General Description OFF POK
Low Dropout Linear Regulator Controller Features General Description Wide Supply Voltage Range from 4.5 to 13.5V High Output Accuracy Over Operating Temperature and Loading Ranges Fast Transient Response
USB Controller OCB 1 GND 2 EN 3 5 VOUT 4 VIN OCB 1 GND 2 5 VOUT ENB 3 4 VIN SOT-23-5 APL3550B/D/F. (Top View)
Power-Distribution Switches Features 7mW (MSOP-8) High Side MOSFET Wide Supply Voltage Range:.7V to 5.5V Current-Limit and Short-Circuit Protections Over-Temperature Protection Fault Indication Output
Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
APX9200. Features. General Description. Applications. Pin Configuration. Single-Phase Full-Wave Motor Driver for Fan Motor
Single-Phase Full-Wave Motor Driver for Fan Motor Features Single Phase Full Wave Fan Driver Built-in Reverse oltage Protection Circuit Built-in ariable Speed Curve Function. It can compensate motors whose
P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D
P HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS
Package Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
General Description. Features. Simplified Application Circuit. Applications. 3A, Ultra Low Dropout (0.23V Typical) Linear Regulator
3A, Ultra Low Dropout (0.23V Typical) Linear Regulator Features Compatible with APL5913 Ultra Low Dropout - 0.23V(typical) at 3A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC))
APL3512. General Description. Features. Applications. Simplified Application Circuit. Power-Distribution Switches with Soft Start
Power-Distribution Switches with Soft Start Features 90mW High Side MOSFET 2A Continuous Current Soft-Start Time Programmable by External Capacitor Wide Supply Voltage Range: 2.7V to 5.5V Current-Limit
Date Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
advise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
Date Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
Applications. Simplified Application Circuit. Pin Configuration. Power-Distribution Switches with Soft Start SOP-8P. (Top View)
Power-Distribution Switches with Soft Start Features 84mW High Side MOSFET Soft Start Time Programmable by External Capacitor Wide Supply Voltage Range: 4.5V to 4V Current Limit Protections Under Voltage
SM4337NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/55A, R DS(ON) =7.1mW V GS
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/55, R DS(ON) =7.1mW (max.) @ V GS =V R DS(ON) =mw (max.) @ V GS =4.5V % E S (UIS) test ESD Protection D D D D S S S G DFN5x6-8 Pin 1 Lead Free
Features. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
G D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
Features. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
Package Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
APL3570. General Description. Features. Applications. Pin Configuration. Simplified Application Circuit. Single Channel Power-Load Switch VOUT 4 5 VIN
Single Channel Power-Load Switch Features Low On-resistance at VIN =3.3V : 35mΩ(typ.) 40mΩ(max.) Low Quiescent Current: 40mA (max.) VIN Supply Voltage Range:.7V to 4V Current Limit Protection Over-Temperature
Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
Features. General Description. Applications. 8-PIN Synchronous Buck PWM Controller
8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to
APL431L. General Description. Applications. Symbol. Functional Diagram. Low Voltage Adjustable Precision Shunt Regulator
Low Voltage Adjustable Precision Shunt Regulator Features Precise Reference Voltage to 1.24V Guaranteed.5% or 1% Reference Voltage Tolerance Sink Current Capability, 8uA to 1mA Quick Turn-on Adjustable
SM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
G : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
APM9948K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 60V/4A, R DS(ON) = 10V
ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable
SM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)
Applications VIN LX APW8825 NC FB PGND AGND
3A 5V 1MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic Skip/PWM Mode Operation Adjustable Output Voltage from 0.6V to VIN Integrated 110mW High side 80mW Low Side MOSFET Low
22μH. C1 1μF. C2 1μF 10 strings
Fixed 600kHz Step-UP Converter for White LEDs Features General Description Wide Input Voltage from 2.7V to 6V Fixed 600kHz Switching Frequency Reference Voltage : 0.2V PWM brightness control with wide
Applications. C VCC 1uF VCC VIN PVCC APW8703 APW8706 APW8707 LX PWM PGND AGND
High-Performance, High-Current DrMOS Power Module Features 4.5V ~ 5.5V Input Range for VCC & PVCC 4.5V ~ 25V Input Range for Power-On-Reset Monitoring on VCC Pin APW8703-Up to 10A (peak), 8A (continuous)
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/85A, R DS(ON) =10V = 4.6mW V GS. = 3mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/85, R DS(ON) = 3mW (Max.) @ V GS =V R DS(ON) = 4.6mW (Max.) @ V GS =4.5V Reliable and Rugged D G S Lead Free and Green Devices vailable (RoHS
Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)
SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
SM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
Handling Code Temperature Range Package Code. Assembly Material
N-Channel Enhancement Mode MOSFET Features 75V/7 a, R DS(ON) = 4.3mW (Max.) @ V GS =V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) Pin Description D S G Top View of TO-263-3
General Description. Simplified Application Circuit Applications
3A 5V MHz Synchronous Buck Converter Features High Efficiency up to 95% - Automatic PFM/PWM Mode Operation Adjustable Output Voltage from 0.6V to V PVDD Integrated 65mW High Side / 55mW Low Side MOSFETs
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4.
N-Channel Enhancement Mode MOSFET Features 100V/15A, R DS(ON) = 100mW(max.) @ V GS = 10V R DS(ON) = 110mW(max.) @ V GS = 4.5V 100% UIS + R g Tested ESD Protection Reliable and Rugged Lead Free and Green
Three-Phase Full-wave Sine-wave Brushless Motor Driver
Three-Phase Full-wave Sine-wave Brushless Motor Driver Features Three-Phase Full-Wave Sine-Wave Driver One-Hall or Sensor-Less driver control Rpm-Curve Control Rotation Direction Selectable Built-in 5V
Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.
ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
APW7251/A. Pin Configuration. Applications. Simplified Application Circuit. Boost and Dual LDOs with POK
Boost and Dual LDOs with POK Features General Description Wide Input Voltage from V to 5.5V Built-in Soft-start Boost Converter Fixed Output Voltage: APW75:.5V APW75A:.V
Handling Code Temperature Range
N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices
Source and Sink, 2A, Fast Transient Response Linear Regulator VIN VREF VOUT APL5339 VOSNS GND
Source and Sink, A, Fast Transient Response Linear Regulator Features Provide Bi-direction Currents - Sourcing or Sinking Current Up to A Built-in Soft-Start Power-On-Reset Monitoring on VCNTL Pins Fast
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 4V/66A, R DS(ON) =3.2mW (Max.) @ V GS =V R DS(ON) =4mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
SM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 3V/64A, R DS(ON) = 5.2mΩ (max.) @ = V R DS(ON) = 7.5mΩ (max.) @ = 4.5V Channel 2 3V/85A, G2 S2S2S2 D G DD S/D2 (Pin 9) DFN5x6D-8_EP2
SM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9.
Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @
Package Code. Handling Code Temperature Range. Assembly Material
Step-Up Converter for 4 Series White LEDs Driver Features General Description.5 V to 6V Input Voltage Range 400mA Internal Switch Current Up to MHz Switching Frequency 70mA Typical No Load Quiescent Current
Preliminary VLAL 1 HUM 4 HVP 5 HWP 7 HWM 8 VLAH 9
Three-Phase Full-wave Sine-wave Brushless Motor Driver Features General Description Three-Phase Full-Wave Sine-Wave Driver 1-Hall or 3-Hall Drive Wide Input Voltage: 6V to 30V VSP Pin Linear or Direct
Handling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
A3213 and A3214. Micropower Ultra-Sensitive Hall-Effect Switches. Packages:
FEATURES AND BENEFITS Micropower operation Operate with north or south pole 2.4 to 5.5 V battery operation Chopper stabilized Superior temperature stability Extremely low switchpoint drift Insensitive
MX887P. Power Hall-Effect Switch INTEGRATED CIRCUITS DIVISION. Features. Description. Applications. Ordering Information
Power Hall-Effect Switch INTEGRATED CIRCUITS DIVISION Features Power Operation (15 W typical at 25 C) Omnipolar (switches with N or S pole) 2.5V to 5.5V Operation CMOS Push-Pull Output Ultra Low Offset
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD HALL EFFECT MICRO SWITCH IC DESCRIPTION The is a low power, pole independent Hall-effect switch with a latched digital output driver. It can work in 2.5V supply. Either a
SM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
Handling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free
General Description. Applications. Simplified Application Circuit. Pin Configuration. Li+ Charger Protection IC
Li+ Charger Protection IC Features Provide Input Over-Voltage Protection Programmable Input Over-Current Protection Battery Over-Voltage 4.35V/4.435V Protection Over-Temperature Protection High Immunity
S1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
Package Code. Temperature Range. I : -40 to 85 C. Handling Code. TR : Tape & Reel. Assembly Material
Single Step-up DC/DC Controller Features General Description 2.5 to 5.5V Input Voltage Range Adjustable Frequency: Maximum 1MHZ Incorporates Soft-Start Function Built-in Short-Circuit Detection Circuit