List... Package outline... Features Mechanical data Maximum ratings Rating and characteristic curves Pinning information...
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1 Silicn Rectifier Frmsa MS List List... Package utline Features... 2 Mechanical data... 2 Maximum ratings... 2 Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Taping & bulk specificatins fr AXIAL devices Suggested thermal prfiles fr sldering prcesses... 5 High reliability test capabilities Page 1 Dcument ID Issued Date Revised Date Revisin Page.
2 Silicn Rectifier Frmsa MS 3.A Glass Passivated Leaded Effciency Fast Rectifiers-5-6V Package utline Features Axial lead type devices fr thrugh hle design. Reverse recvery time less than 25ns High current capability. Lw reverse leakage current. High surge capability. Glass passivated chip junctin. Lw frward drp dwn vltage. High reliability. Lead-free parts meet RHS requirments..22(5.6).197(5.) DIA. D-21AD 1.(25.4) MIN..375(9.5).285(7.2) Mechanical data Epxy : UL94-V rated flame retardant Case : Mlded plastic, D-21AD Lead : Axial leads, slderable per MIL-STD-22, Methd 28 guranteed Plarity: Clr band dentes cathde end Munting Psitin : Any Weight : Apprximated 1.1 gram.52(1.3).48(1.2) DIA. 1.(25.4) MIN. Dimensins in inches and (millimeters) Maximum ratings (AT T A=25 C unless therwise nted) PARAMETER Frward rectified current CNDITINS Ambient temperature = 55 C Symbl MIN. TYP. MAX. UNIT I 3. A Frward surge current Reverse current Dide junctin capacitance 8.3ms single half sine-wave superimpsed n rate lad (JEDEC methde) V R = V RRM T A = 25 C V R = V RRM T A = 125 C f=1mhz and applied 4V DC reverse vltage Strage temperature T STG C I FSM I R C J A ua pf SYMBLS EF31G EF32G EF33G *1 V RRM V *2 RMS *3 V R *4 V F *5 T RR perating temperature *1 Repetitive peak reverse vltage (V) (V) (V) (V) (ns) T, J (C) *2 RMS vltage *3 Cntinuus reverse vltage EF34G EF35G t +15 *4 Maximum frward vltage *5 Reverse recvery time Page 2 Dcument ID Issued Date Revised Date Revisin Page.
3 Rating and characteristic curves () INSTANTANEUS FRWARD CURRENT,(A) FIG.1-TYPICAL FRWARD CHARACTERISTICS EF31G~EF33G EF34G EF35G T J=25 C Pulse Width 3us 1% Duty Cycle AVERAGE FRWARD CURRENT,(A) FIG.2-TYPICAL FRWARD CURRENT DERATING CURVE Single Phase Half Wave 6Hz Resistive r Inductive Lad.375"(9.5mm) Lead Length AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NN-REPETITIVE FRWARD SURGE CURRENT (+) 25Vdc (apprx.) ( ) D.U.T. FRWARD VLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE 5W NNINDUCTIVE RECVERY TIME CHARACTERISTICS 1 W NN- INDUCTIVE 1W NNINDUCTIVE SCILLISCPE (NTE 1) ( ) PULSE GENERATR (NTE 2) (+) PEAK FRWARD SURGE CURRENT,(A) T J=25 C NUMBER F CYCLES AT 6Hz 8.3ms Single Half Sine Wave JEDEC methd NTES: 1. Rise Time= 7ns max., Input Impedance= 1 meghm.22pf. 2. Rise Time= 1ns max., Surce Impedance= 5 hms. FIG.5-TYPICAL JUNCTIN CAPACITANCE A -.25A -1.A trr 1cm JUNCTIN CAPACITANCE,(pF) SET TIME BASE FR 1 / 2ns / cm REVERSE VLTAGE,(V) Page 3 Dcument ID Issued Date Revised Date Revisin Page.
4 Silicn Rectifier Frmsa MS Pinning infrmatin Pin Simplified utline Symbl Pin1 Pin2 cathde ande Marking Type number EF31G EF32G EF33G EF34G EF35G Marking cde EF31G EF32G EF33G EF34G EF35G Taping & bulk specificatins fr AXIAL devices 52.4mm 17mm DIA. 55mm Max. A 17mm DIA. 72mm DIA. 355mm 71mm Max. FF Center bth sids 1.mm 6.3mm Max FF Alignment 1.2mm REEL PACKING DEVICE Q'TY 1 CMPNENT CARTN Q'TY 2 APPRX. CASE (PCS / REEL) SPACING SIZE (PCS / CARTN) CRSS TYPE "A" in FIG. A WEIGHT(kg) D-21AD 1,2 1 mm 38 * 34 * 37 4,8 9.1 AMM PACKING DEVICE Q'TY 1 INNER CARTN Q'TY 2 APPRX. CASE (PCS / BX) BX SIZE SIZE (PCS / CARTN) CRSS TYPE WEIGHT(kg) D-21AD 1,2 26 * 83 * * 27 * 34 12, Page 4 Dcument ID Issued Date Revised Date Revisin Page.
5 Silicn Rectifier Frmsa MS BULK PACKING DEVICE CASE TYPE Q'TY 1 (PCS / BX) INNER BX SIZE CARTN SIZE Q'TY 2 (PCS / CARTN) APPRX. CRSS WEIGHT(kg) D-21AD 5 35 * 7 3 * * 32 * , 16.4 Suggested thermal prfiles fr sldering prcesses 1.Strage envirnment: Temperature=1 C~35 C Humidity=65%±15% 2.Reflw sldering f surface-munt devices TP tp Critical Zne TL t TP Ramp-up TL Tsmax tl Temperature TS Tsmin ts Preheat Ramp-dwn 25 t25 C t Peak Time Wave Sldering IR Reflw 3.Flw (wave)sldering (slder dipping) Prfile Feature Average ramp-up rate(tl t TP) Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min t max)(ts) Tsmax t TL -Ramp-upRate Time maintained abve: -Temperature(TL) -Time(tL) Peak Temperature(TP) Sldering Cnditin <3 C/sec 1 C 15 C 6~12sec <3 C/sec 183 C 6~15sec 255 C-/+5 C Time within 5 C f actual Peak Temperature(tP) 1~3sec Ramp-dwn Rate Time 25 C t Peak Temperature <6 C/sec <6minutes Page 5 Dcument ID Issued Date Revised Date Revisin Page.
6 Silicn Rectifier Frmsa MS High reliability test capabilities Item Test Cnditins Reference 1. Slder Resistance at 26±5 C fr 1±2sec. immerse bdy int slder 1/16"±1/32" METHD Slderability at 245±5 C fr 5 sec. MIL-STD-22F METHD Pull Test 1kg in axial lead directin fr 1 sec. METHD Bend Lead.5kg weight applied t each lead bending arc 9 ±5 fr 3 times. METHD High Temperature Reverse Bias V R=8% rate at T J=15 C fr 168 hrs. METHD Frward peratin Life 7. Intermittent peratin Life 8. Pressure Cker Rated average rectifier current at T=25 C fr 5hrs. T A = 25 C, I F = I n state: pwer n fr 5 min. ff state: pwer ff fr 5 min, n and ff fr 5 cycles. 15P SIG at T A=121 C fr 4 hrs. METHD-127 METHD Temperature Cycling 1. Thermal Shck -55 C t +125 C dwelled fr 3 min. and transferred fr 5min. ttal 1 cycles. C fr 5 min. rise t 1 C fr 5 min. ttal 1 cycles. METHD-151 METHD Frward Surge 12. Humidity 8.3ms single half sine-wave superimpsed n rated lad, ne surge. at T A=65 C, RH=98% fr 1hrs. METHD METHD High Temperature Strage Life at 175 C fr 1 hrs. METHD Slvent Resistance Dip int Fren at 25 C fr 1 min. MIL-STD-22F METHD Page 6 Dcument ID Issued Date Revised Date Revisin Page.
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IR Emitter and Detector Product Data Sheet LTE-S9511-E Spec No.: DS Effective Date: 01/07/2014 LITE-ON DCC RELEASE
IR Emitter and Detectr Prduct Data Sheet Spec N.: DS5-213-18 Effective Date: 1/7/214 Revisin: C LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics N.9,Chien 1 Rad, Chung H, New Taipei
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes SYMBOL I O I FSM. R θ JC.
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 2. Amperes RS21 THRU RS27 FEATURES * Ideal for printed circuit board * Surge overload rating: 5 amperes peak * Weight:
A_LT-2W & B_LT-2W Series 2W, FIXED INPUT, ISOLATED & UNREGULATED DUAL/SINGLE OUTPUT DC-DC CONVERTER
A_LT-2W & B_LT-2W Series 2W, FIXED INPUT, ISOLATED & UNULATED DUAL/SINGLE OUTPUT - CONVERTER FEATURES Efficiency up t 85% Lw Temperature rise 1KV Islatin SMD Package Operating Temperature Range: - C ~
SYMBOL V RRM V RMS. Volts Maximum Average Forward Output Current at T A = 40 o C V DC I O I FSM. A 2 S 40 Typical Thermal Resistance (Note 2) TJ,TSTG
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 2. Amperes DB21S THRU DB27S FEATURES * Good for automation insertion * Surge overload rating - 6 amperes peak * Ideal
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FEATURES * Current transfer rati ( CTR : MIN. 5% at IF = 5mA, VCE = 5V ) * High input-utput islatin vltage ( Vis = 5,Vrms ) * Respnse time ( tr : TYP. 4µs at VCE = 2V, IC = 2mA, RL = Ω ) * Dual-in-line
Fast Switching Plastic Rectifier
Fast Switching Plastic Rectifier TO-0AC ITO-0AC FEATURES Glass passivated chip junction Superfast recovery time for high efficiency Low leakage current High forward surge capability BY9 Series CASE TO-63AB
1A Sintered Glass Passivated Ultra Fast Rectifier (SGP ) TCDU1WW. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
1A Sintered Glass Passivated Ultra Fast Rectifier (SGP ) 1A Sintered Glass Passivated Ultra Fast Rectifier (SGP ) Features Sintered glass passivated (SGP ) rectifier chip Low Profile with Chip Package
SURFACE MOUNT SILICON RECTIFIER. VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere SYMBOL V RRM V RMS V DC I O I R IFSM. I 2 t
SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 5 to 1 Volts CURRENT Ampere SA1 THRU SA7 FEATURES * Ideal for surface mounted applications * Low leakage current *Metallurgically bonded construction *Mounting
Terminals: Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026 TCDU 1JW TCDU 1KW. 1.0 A See Fig A. 50 µa TA=125 C.
1.0A Sintered Glass Passivated Ultra Fast Low Profile Rectifier (SGP ) 1DW 1MW 1.0A Sintered Glass Passivated Ultra Fast Low Profile Rectifier (SGP ) Features Qualified to AEC-Q101 standards for high reliability
Transient Voltage Suppressors (TVS) Data Sheet
Transient Suppressors (TVS) Data Sheet Features Glass passivated junction Low zener impedance Excellent clamping capability 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere SYMBOL V RRM V RMS V DC I O. C/W Typical Thermal Resistance (Note 1) R θ JL C J T J T STG
SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 1. Ampere FM41W THRU FM47W FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * Mounting
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER SYMBOL
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 5 to 6 CURRENT 1. Ampere FEATURES * Glass passivated device * Ideal for surface mounted applications * Low leakage current * Metallurgically
VOLTAGE RANGE 50 to 600 Volts CURRENT 10.0 Amperes. UNITS Maximum Recurrent Peak Reverse Voltage V RRM V RMS V DC I O I FSM. I 2 t 93.
GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE 5 to 6 Volts CURRENT 1. Amperes SF11P THRU SF17P FEATURES * Low Profile Design for Smart Phone Charger * Ideal for SMT Mounting * High Forward Surge
IR Emitter and Detector Product Data Sheet LTE-C9501 Spec No.: DS Effective Date: 01/08/2014 LITE-ON DCC RELEASE
IR Emitter and Detectr Prduct Data Sheet Spec N.: DS5-213-7 Effective Date: 1/8/214 Revisin: A LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics N.9,Chien 1 Rad, Chung H, New Taipei
Property of Lite-On Only
FEATURES. This specificatin shall be applied t phtcupler Mdel N. April 2 LTV-852/LTV-8D52 as an ptin. 2. Applicable Mdels (Business dealing name) * Dual-in-line package : LTV852-V / LTV8D52-V * Wide lead
Infrared Product Data Sheet LTR-C950-TB-T LITE-ON DCC RELEASE
Infrared Prduct Data Sheet Spec N. :DS5-214-58 Effective Date: 8/25/218 Revisin: A LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics N.9,Chien 1 Rad, Chung H, New Taipei City 23585,
General Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) PRIMARY CHARACTERISTICS I F(AV).0 A V RRM V to 00 V I FSM (8.3 ms sine-wave) A I FSM (square wave t p = ms) 45 A V F. V I R 5.0 µa T J
US1R SURFACE MOUNT ULTRAFAST RECTIFIER FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS. VOLTAGE 1300 Volt CURRENT 1 Ampere
SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE 300 Volt CURRENT Ampere FEATURES For surface mounted applications in order to optimize board space Easy pick and place Ultrafast recovery times for high efficiency
4 1N4001G-K - 1N4007G-K Taiwan Semiconductor. 1A, 50V V Glass Passivated Rectifier
4 N400 - N4007 A, 50V - 00V Glass Passivated Rectifier FEATURES Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency
Photocoupler Product Data Sheet CNY17F-1 THRU CNY17F 4 SERIES LITE-ON DCC RELEASE
Prduct Data Sheet CNY17F-1 THRU CNY17F 4 SERIES Spec N. :DS-7-99-32 Effective Date: 8/22/217 Revisin: D LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics N.9,Chien 1 Rad, Chung H,
SUPER LOW Vf SCHOTTKY BARRIER RECTIFIER SYMBOL FML120B V RRM V RMS V DC I O C J T J T STG
SUPER LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 2 to 4 CURRENT 1. Ampere FML12B THRU FML14B FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. P6KE6V8(C)A - P6KE4(C)A 6W TRANSIENT VOLTAGE SUPPRESSOR Features 6W Peak Pulse
Symbol Parameter Value Unit I T(RMS) Repetitive F = 50 Hz Non Repetitive 100 T stg T j
TW T3W SNUBBERLESS TRAC FEATURES TRMS =A V DRM =V RRM = V t 7V EXCELLENT SWTCHNG PERFORMANCES NSULATNG VOLTAGE = 5V(RMS) U.L. RECOGNZED : E873 DESCRPTON The T/3W triacs use high perfrmance glass passivated
CM1623. EMI Filter with ESD Protection for SIM Card Applications
EMI Filter with ESD Prtectin fr SIM Card Applicatins Features 4 Channel EMI Filtering with Integrated ESD Prtectin Pi Style EMI Filters in a Capacitr Resistr Capacitr (C R C) Netwrk kv ESD Prtectin n Each
Glass Passivated Ultrafast Plastic Rectifier
Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability condition Cavity-free glass-passivated junction Ideal for printed circuit
5A, 50V V Surface Mount Rectifier
5A, 50V - 000V Surface Mount Rectifier FEATURES Glass passivated chip junction Ideal for automated placement Low forward voltage drop High current capability High surge current capability Compliant to
MCC MMSZ5221B THRU MMSZ5261B(C) Revision: H 2014/04/30 SOD123 A B. Features. 500 mw Zener Diodes 2.4 to 47 Volts
M Micr mmercial mpnents mpnents 2736 Marilla Street hatswrth!"# $%!"# MMSZ522B THRU MMSZ526B() Features Lead Free Finish/RHS mpliant("p" Suffix designates RHS mpliant. See rdering infrmatin) Planar Die
Dual Common Cathode Ultrafast Plastic Rectifier
Dual Common Cathode Ultrafast Plastic Rectifier TO-2AB UGE8xCT PIN PIN 2 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency Low
4 1N5400G-K - 1N5408G-K Taiwan Semiconductor. 3A, 50V V Glass Passivated Rectifier
4 1N5400-1N5408 3A, 50V - 0V Glass Passivated Rectifier FEATURES Glass passivated chip junction High current capability, Low V F High reliability High surge current capability Low power loss, high efficiency
PRELIMINARY CPC1017NTR. 4 Pin SOP OptoMOS Relays
4 Pin SOP OptMOS Relays Units Lad Vltage 6 V Lad Current 1 ma Max R ON 16 Ω Current t perate 1. ma eatures Design fr use in security systems cmplying with EN13-4 Only 1mA f LED curent required t perate
Dual Common-Cathode Ultrafast Rectifier
Dual Common-Cathode Ultrafast Rectifier TO-22AB BYV32 Series PIN PIN 3 CASE 2 3 TO-263AB ITO-22AB 2 3 BYVF32 Series PIN PIN 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery
Ultrafast Plastic Rectifier
8xT, F8xT, B8xT Ultrafast Plastic Rectifier TO-0AC ITO-0AC FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency 8xT PIN F8xT PIN Low leakage
Ultrafast Plastic Rectifier
Ultrafast Plastic Rectifier 6xT, F6xT, B6xT TO-0AC 6xT Series PIN CASE ITO-0AC F6xT Series PIN D PA (TO-63AB) B6xT Series PIN HEATSIN FEATURES Power pack Glass passivated pellet chip junction Ultrafast
High Voltage Glass Passivated Junction Plastic Rectifier
High Voltage Glass Passivated Junction Plastic Rectifier SUPERECTIFIER FEATURES Superectifier structure for high reliability application Cavity-free glass-passivated junction Low leakage current High forward
BC846AW-AU ~ BC850CW-AU
NPN GENERAL PURPOSE TRANSISTORS OLTAGE 30/45/65 lt POWER 250 mwatt FEATURES General purpse amplifier applicatins NPN epitaxial silicn, planar design Cllectr current IC = 100mA AEC-Q101 qualified Lead free