LITE-ON TECHNOLOGY CORPORATION

Transcription

1 FEATURES * Current transfer rati ( CTR : MIN. 5% at IF = 5mA, VCE = 5V ) * High input-utput islatin vltage ( Vis = 5,Vrms ) * Respnse time ( tr : TYP. 4µs at VCE = 2V, IC = 2mA, RL = Ω ) * Dual-in-line package : LTV : 1-channel type LTV : 1-channel type LTV-829 : 2-channel type LTV-849 : 4-channel type * Wide lead spacing package : LTV-819-1M : 1-channel type LTV-819-2M : 1-channel type LTV-829M : 2-channel type LTV-849M : 4-channel type * Surface munting package : LTV-819-1S : 1-channel type LTV-819-2S : 1-channel type LTV-829S : 2-channel type LTV-849S : 4-channel type * Tape and reel packaging : LTV-819-1S-TA1, LTV-819-2S-TA1, LTV-829S-TA1 * UL apprved ( N. E ) * TUV apprved ( N. R ) * CSA apprved ( N. CA ) * FIMKO apprved ( N ) * NEMKO apprved ( N. P96313 ) * DEMKO apprved ( N ) * SEMKO apprved ( N / 1-3 ) * VDE apprved ( N ) Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 1 f 13

2 OUTLINE DIMENSIONS LTV : LTV : *1. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 2 f 13

3 OUTLINE DIMENSIONS LTV-829 : LTV-849 : *1. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 3 f 13

4 OUTLINE DIMENSIONS LTV-819-1M : LTV-819-2M : *1. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 4 f 13

5 OUTLINE DIMENSIONS LTV-829M : LTV-849M : *1. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 5 f 13

6 OUTLINE DIMENSIONS LTV-819-1S : LTV-819-2S : *1. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 6 f 13

7 OUTLINE DIMENSIONS LTV-829S : LTV-849S : *1. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 7 f 13

8 TAPING DIMENSIONS LTV-819-1S-TA1, LTV-819-2S-TA1 : LTV-829S-TA1 : Descriptin Symbl Dimensins in mm ( inches ) Tape wide W 16 ±.3 (.63 ) Pitch f sprcket hles P 4 ±.1 (.15 ) F 7.5 ±.1 (.295 ) Distance f cmpartment P2 2 ±.1 (.79 ) Distance f cmpartment t cmpartment P1 12 ±.1 (.472 ) Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 8 f 13

9 ABSOLUTE MAXIMUM RATING ( Ta = 25 C ) PARAMETER SYMBOL RATING UNIT Frward Current IF 5 ma INPUT Reverse Vltage VR 6 V Pwer Dissipatin P 7 mw Cllectr - Emitter Vltage VCEO 35 V OUTPUT Emitter - Cllectr Vltage VECO 6 V Cllectr Current IC 5 ma Cllectr Pwer Dissipatin PC 15 mw Ttal Pwer Dissipatin Ptt 17 mw *1 Islatin Vltage Vis 5, Vrms Operating Temperature Tpr -25 ~ + C Strage Temperature Tstg -4 ~ +125 C *2 Sldering Temperature Tsl 26 C *1. AC Fr 1 Minute, R.H. = 4 ~ 6% Islatin vltage shall be measured using the fllwing methd. (1) Shrt between ande and cathde n the primary side and between cllectr and emitter n the secndary side. (2) The islatin vltage tester with zer-crss circuit shall be used. (3) The wavefrm f applied vltage shall be a sine wave. *2. Fr Secnds Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 9 f 13

10 ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25 C ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Frward Vltage VF V IF=2mA INPUT Reverse Current IR µa VR=4V Terminal Capacitance Ct 3 25 pf V=, f=1khz Cllectr Dark Current ICEO na VCE=2V, IF= OUTPUT Cllectr-Emitter Breakdwn Vltage BVCEO 35 V IC=.1mA IF= Emitter-Cllectr Breakdwn Vltage BVECO 6 V IE=µA IF= Cllectr Current IC ma * Current Transfer Rati CTR 5 4 % IF=5mA VCE=5V Cllectr-Emitter Saturatin Vltage VCE(sat).1.2 V IF=2mA IC=1mA TRANSFER CHARACTERISTICS Islatin Resistance Ris Ω DC5V 4 ~ 6% R.H. Flating Capacitance Cf.6 1 pf V=, f=1mhz Cut-Off Frequency fc 8 khz Respnse Time (Rise) tr 4 µs Respnse Time (Fall) tf 3 µs VCE=5V, IC=2mA RL=Ω, -3dB VCE=2V, IC=2mA RL=Ω * CTR I C = % I F Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : f 13

11 CHARACTERISTICS CURVES Fig.1 Frwrd Current vs. Ambient Temperatute Fig.2 Cllectr Pwer Dissiptin vs. Ambient Temperature Frward current I (ma) F Ambient temperature Ta ( C) Cllectr Pwer dissipatin Pc (mw) Ambient temperature Ta ( C) Fig.3 Cllectr-emitter Saturatin Vltage vs. Frward Current Fig.4 Frward Current vs. Frward Vltage Cllectr-emitter saturatin vltage V (sat) (V) CE Ic=.5mA 1mA 3mA 5mA 7mA 5 Frward current I F(mA) O Ta= 25 C 15 Frward current I (ma) F Ta= 75 C 5 C 25 C C -25 C Frward vltage V F(V) Fig.5 Current Transfer Rati vs. Frward Current Fig.6 Cllectr Current vs. Cllectr-emitter Vltage Current transfer rati CTR (%) V CE= 5V Ta= 25 C Frward current I F(mA) Cllectr current Ic (ma) 3 I F= 3mA 25 2mA ma 5mA Ta= 25 C Pc(MAX.) Cllectr-emitter vltage V CE(V) Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 11 f 13

12 CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Rati vs. Ambient Temperature Fig.8 Cllectr-emitter Saturatin Vltage vs. Ambient Temperature Relative current transfer rati (%) I F = 5mA V CE= 5V Ambient temperature Ta ( C) Cllectr-emitter saturatin vltage V (sat) (V) CE I F= 2mA Ic= 1mA Ambient temperature Ta ( C) Fig.9 Cllectr Dark Current vs. Ambient Temperature Cllectr dark current I (A) CEO V CE= 2V Ambient temperature Ta ( C) Fig. Respnse Time vs. Lad Resistance Respnse time ( s) V CE= 2V Ic= 2mA Ta= 25 C ts tr tf td Lad resistance R L(k ) Fig.11 Frequency Respnse Test Circuit fr Respnse Time Vltage gain Av (db) V CE = 5V Ic= 2mA Ta= 25 C R L= k 1k Frequency f (khz) Vcc Input Output Input R D R L Output td ts tr tf Test Circuit fr Frequency Respnse Vcc R D RL Output % 9% Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 12 f 13

13 RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm 4 PIN 8 PIN 16 PIN Part N. : LTV / / 829 / 849 (M, S, S-TA1) Page : 13 f 13