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1 FEATURES. This specificatin shall be applied t phtcupler Mdel N. April 2 LTV-852/LTV-8D52 as an ptin. 2. Applicable Mdels (Business dealing name) * Dual-in-line package : LTV852-V / LTV8D52-V * Wide lead spacing package : LTV852M-V / LTV8D52M-V * Surface munting package : LTV852S-V / LTV8D52S-V * Tape and reel packaging : LTV852STA-V / LTV8D52STA-V 3. The relevant mdels are the mdels Apprved by VDE accrding t DIN VDE 884:992-6 Apprved Mdel N.: LTV-852 / LTV-852M / LTV-852S / LTV-8D52 / LTV-8D52M / LTV-8D52S VDE apprved N.: (Accrding t the specificatin DIN VDE 884:992-6) * Operating islatin vltage V IORM : 85V (Peak) * Transient vltage V TR : 6V (Peak) * Pllutin : 2 (Accrding t VDE - : 997-4) * Clearances distance (Between input and utput) : 7.mm (MIN.) * Creepage distance (Between input and utput) : 7.mm (MIN.) * Islatin thickness between input and utput :.4mm (MIN.) * Safety limit values Current (Isi) : 4mA (Dide side) Pwer (Psi) : 7mW (Phttransistr side) Temperature (Tsi) : 75 C In rder t keep safety electric islatin f phtcupler, please set the prtective circuit t keep within safety limit values when the actual applicatin equipment trubled. * Indicatin f VDE 884 apprval prints " " n sleeve package. Part N. : LTV852/ 8D52 (M, S, STA) -V Page : f
2 OUTLINE DIMENSIONS LTV852-V : LTV8D52-V : *. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked. (Z : Taiwan, Y : Thailand, X : China-TJ, W : China-CZ) Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 2 f
3 OUTLINE DIMENSIONS LTV852M-V : LTV8D52M-V : *. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked. (Z : Taiwan, Y : Thailand, X : China-TJ, W : China-CZ) Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 3 f
4 OUTLINE DIMENSIONS LTV852S-V : LTV8D52S-V : *. Year date cde. *2. 2-digit wrk week. *3. Factry identificatin mark shall be marked. (Z : Taiwan, Y : Thailand, X : China-TJ, W : China-CZ) Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 4 f
5 TAPING DIMENSIONS LTV852STA-V : LTV8D52STA-V : Descriptin Symbl Dimensins in mm ( inches ) Tape wide W 6 ±.3 (.63 ) Pitch f sprcket hles P 4 ±. (.5 ) F 7.5 ±. (.295 ) Distance f cmpartment P2 2 ±. (.79 ) Distance f cmpartment t cmpartment P 2 ±. (.472 ) Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 5 f
6 ABSOLUTE MAXIMUM RATING ( Ta = 25 C ) PARAMETER SYMBOL RATING UNIT Frward Current IF 5 ma INPUT Reverse Vltage VR 6 V Pwer Dissipatin P 7 mw Cllectr - Emitter Vltage VCEO 3 V OUTPUT Emitter - Cllectr Vltage VECO. V Cllectr Current IC 5 ma Cllectr Pwer Dissipatin PC 5 mw Ttal Pwer Dissipatin Ptt 2 mw * Islatin Vltage Vis 5, Vrms Operating Temperature Tpr -3 ~ + C Strage Temperature Tstg -55 ~ +25 C *2 Sldering Temperature Tsl 26 C *. AC Fr Minute, R.H. = 4 ~ 6% Islatin vltage shall be measured using the fllwing methd. () Shrt between ande and cathde n the primary side and between cllectr and emitter n the secndary side. (2) The islatin vltage tester with zer-crss circuit shall be used. (3) The wavefrm f applied vltage shall be a sine wave. *2. Fr Secnds Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 6 f
7 ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25 C ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Frward Vltage VF.2.4 V IF=mA INPUT Reverse Current IR µa VR=4V Terminal Capacitance Ct 3 25 pf V=, f=khz Cllectr Dark Current ICEO 2 na VCE=2V, IF= OUTPUT Cllectr-Emitter Breakdwn Vltage BVCEO 3 V IC=.mA IF= Emitter-Cllectr Breakdwn Vltage BVECO. V IE=µA IF= Cllectr Current IC 4 5 ma * Current Transfer Rati CTR, 4, 5, % IF=mA VCE=2V Cllectr-Emitter Saturatin Vltage VCE(sat).2 V IF=2mA IC=mA TRANSFER CHARACTERISTICS Islatin Resistance Ris 5 Ω DC5V 4 ~ 6% R.H. Flating Capacitance Cf.6 pf V=, f=mhz Cut-Off Frequency fc 7 khz Respnse Time (Rise) tr 3 µs Respnse Time (Fall) tf 2 µs VCE=2V, IC=2mA RL=Ω, -3dB VCC=2V, IC=2mA RL=Ω * CTR I C = % I F Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 7 f
8 ISOLATION SPECIFICATION ACCORDING TO VDE 884 Parameter Symbl Cnditins Rating Unit Remark Class f envirnmental test - DIN IEC68 3//2 - Pllutin - DIN VDE 2 - Maximum Operating Islatin Vltage V IORM - 85 V PEAK Partial Discharge Test Diagram tp=6s, qc<5pc 275 V PEAK Vltage (Between Vpr Input and Output) Diagram 2 tp=s, qc<5pc 594 V PEAK Refer t the Diagram, 2 Maximum Over-vltage V INITIAL t INI = s 6 V PEAK Safety Maximum Ratings ) Case Temperature Tsi I F =, Pc = 75 2) Input Current Isi Pc= 4 ma C Refer t the Figure, 3 3) Electric Pwer (Output r Ttal Pwer Issipatin) Psi - 7 mw Ta=Tsi MIN. 9 Islatin Resistance (Test Vltage Between Input and Output : DC5V) R ISO Ta=Tpr(MAX.) MIN. Ω Ta=25 C MIN. 2 Precautins in perfrming islatin test * Partial discharge test methds shall be the nes accrding t the specificatins f VDE 884:992-6 * Please dn't carry ut islatin test (Vis) ver V INITIAL,This prduct deterirates islatin characteristics by partial discharge due t applying high vltage (ex. V INITIAL ). And there is pssibility that this prduct ccurs partial discharge in perating islatin vltage (V IORM ) Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 8 f
9 PARTIAL DISCHARGE TEST METHOD Methd (A) fr type testing and randm testing. V VINTIAL t tini t3 t2 Vpr tp tb t4 VIORM t t, t2 = t s t3, t4 = s tp (Partial Discharge Measuring Time)= 6s tb = 62s tini = s Methd (B) fr rutine testing. V Vpr VIORM t3, t4 =.s tp (Partial Discharge Measuring Time)= s tb =.2s t3 tp tb t4 t The partial discharge level shall nt exceed 5 pc during the partial discharge measuring time interval t p under the test cnditins shwn abve. Part N. : LTV852/ 8D52 (M, S, STA) -V Page : 9 f
10 CHARACTERISTICS CURVES Fig. Frward Current vs. Ambient Temperature Fig.2 Cllectr Pwer Dissipatin vs. Ambient Temperature Frward current I (ma) F Ambient temperature Ta ( C) Ambient temperature Ta ( C) Cllectr pwer dissipatin Pc (mw) Fig.3 Cllectr-emitter saturatin Vltage vs. Frward current Fig.4 Frward Current vs. Frward Vltage Cllectr-emitter saturatin vltage V (sat) (V) Ic= 5mA ma 3mA 5mA 7mA ma Frward current IF (ma) Frward current (ma).5 C 8 C 6 C 4 C 2 C Frward vltage (V).9 Fig.5 Current Transfer Rati vs. Frward Current Fig.6 Cllectr Current vs. Cllectr-emitter Vltage Current transfer rati CTR (%) VCE= 2V Cllectr current Ic (ma) ma 5mA 8 3mA mA 2mA.5mA ma PC (MAX.) IF=.5mA. Frward current (ma) Cllectr-emitter vltage V CE(V) Part N. : LTV852/ 8D52 (M, S, STA) -V Page : f
11 CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Rati vs. Ambient Temperature Fig.8 Cllectr-emitter Saturatin Vltage vs. Ambient Temperature Relative current transfer rati (%) IF= ma VCE= 2V 8 O Ambient temperature Ta ( C) Cllectr-emitter saturatin vltage V (sat) (V) CE I F= 2mA Ic= ma O Ambient temperature Ta ( C) Fig.9 Cllectr Dark Current vs. Temperature Fig. Respnse Time vs. Lad Resistance Cllectr dark current ICEO (na) V CE= 2V Respnse time ( s) VCE= 2V IC= 2mA. tr tf td ts O Ambient temperature Ta ( C) Lad resistance RL (k ) Fig. Frequency Respnse Test Circuit fr Respnse Time Vltage gain Av (db) VCE= 2V IC= 2mA RL= k Input RD RL Vcc Output Input Output Test Circuit fr Frequency Respnse td tr Vcc ts tf % 9% -25 RD RL Output. Frequency f (khz) 5 Part N. : LTV852/ 8D52 (M, S, STA) -V Page : f
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