佰鴻工業股份有限公司. BPC-817S. Features: Parameter Symbol Rating Unit
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1 Features: 1. Current transfer ratio (CTR: MIN. 50% at I F =5mA, V CE =5V) Outline Dimensions 2. High input-output isolation voltage (V ISO =5,000Vrms) 3. Response time (tr: TYP. 4µs at V CE =2V, I C =2mA, R L =100 Ω) 4. UL approved(no.e236324) 5. CSA approved(no ) 6. VDE approved(no ) 7. TUV approved(no.r ) 8. FIMKO approved(no.f123724) 9. NEMKO approved(no.p ) 10. SEMKO approved(no ) 11. DEMKO approved(no ) 12.CQC approved (NO.CQC ) 13.This product doesn't contain restriction substance, comply RoHS standard(no Halogen) Description NOTES: 1. The -NHseries are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor 2. The lead pitch is 2.54mm Applications: 1. Computer terminals. 2. System appliances, measuring instruments. 3. Registers, copiers, automatic vending machines. 4. Electric home appliances, such as fan heaters, etc. 5. Signal transmission between circuits of different potentials and impedances. Absolute Maximum Ratings (Ta=25 ) *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked. (T:Taiwan, G:China) *4. Rank shall be or shall not be marked. 5.All dimensions are in millimeters (inches). 6.Tolerance is ±0.25mm (0.01 ) unless otherwise Parameter Symbol Rating Unit Forward Current I F 50 ma INPUT Reverse Voltage V R 6 V Power Dissipation P 70 mw Collector-Emitter Voltage V CEO 35 V Emitter- Collector Voltage V ECO 6 OUTPUT Collector Current I C 50 ma Collector Power Dissipation P C 150 mw Total Power Dissipation P tot 200 mw *1 Isolation Voltage V iso 5,000 Vrms Rated impulse isolation voltage V IOTM 6,000 V Rated repetitive peak isolation voltage V IORM 630 V Operating Temperature T opr -30 to Storage Temperature T stg -55 to *2 Soldering Temperature Tsol 260 *1. AC For minute, R.H. =40~60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Ver.1.0 Page 1of 8
2 Electro-Optical Characteristics (Ta=25 ) Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward Voltage V F I F =20mA V INPUT Reverse Current I R V R =6V µa Terminal Capacitance C t V=0, f=1khz pf OUTPUT Collector Dark Current I CEO V CE =20V, I F = na Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage BV CEO BV ECO I C =0.1mA I F = V I E =10µA I F = V Collector Current I c ma I F =5mA *1 Current Transfer Ratio CTR V CE =5V % TRANSFER CHARACTERIS TICS Collector-Emitter Saturation Voltage Isolation Resistance V CE(sat) R iso I F =20mA I C = 1mA V DC500V 40~60%R.H Ω Floating Capacitance C f V=0, f=1mhz pf Cut-Off Frequency f c V CE =5V, I C =2mA khz R L =100Ω, -3dB Response Time(Rise) t r µs V CE =2V, I C =2mA Response Time(Fall) t f R L =100Ω µs *1 CTR= I C / I F 100% RANK TABLE OF CURRENT TRANSFER RATIO(CTR) RANK MARK Min. (%) Max. (%) L A B C D L or A or B or C or D Notes: 1. Conditions: I F =5mA, V CE =5V, Ta=25. Ver.1.0 Page 2of 8
3 CHARACTERISTICS CURVES Ver.1.0 Page 3 of 8
4 Characteristics Curves Ver.1.0 Page 4 of 8
5 Reliability Test Classification Test Item Reference Standard Test Conditions Result Endurance Test Environmental Test Operation Life High Temperature High Humidity Reverse Bias (H3TRB) High Temperature Reverse Bias (HTRB) High Temperature Storage Low Temperature Storage Autoclave Temperature Cycling Thermal Shock Solder Resistance Solder Ability MIL-STD-750:1026 MIL-STD-883:1005 JIS C 7021 :B-1 JIS C 7021 :B-11 JIS C 7021 :B- 8 MIL-STD-883:1008 JIS C 7021 :B-10 JIS-C-7021 :B-12 JESD 22-A102-B MIL-STD-202:107D MIL-STD-750:1051 MIL-STD-883:1010 JIS C 7021 :A-4 MIL-STD-202:107D MIL-STD-750:1051 MIL-STD-883:1011 MIL-STD-202:201A MIL-STD-750:2031 JIS C 7021 :A-1 MIL-S-883:2003 JIS C 7021 :A-2 Judgment Criteria Of Failure For The Reliability Connect with a power If=50mA Ta=Under room temperature Test time=1,000hrs Ta=+85 ±5, RH=85% PTR=V CE absolute max rating*80% Test time=1000hrs Ta=+105 ±5 PTR=V CE absolute max rating Test time=1000hrs High Ta=+125 ±5 Test time=1,000hrs Low Ta=-55 ±5 Test time=1,000hrs P=15PSIG, Ta=121 Humi. =100%RH, 48hrs 125 ~ 25 ~ -55 ~ 25 30min 5min 30min 5min Test Time=20cycle 125 ~-55 20min 20min Test Time=20cycle Operation heating: 260, within 10±1seconds. Operation heating: 235, within 5±1seconds. Symbol Measuring conditions Judgment criteria for failure V F (V) If=20mA Over Ux1.0 Ir(uA) Vr=6V Over Ux1.0 CTR(%) If=5mA, V CE =5V Shift>1.2 V CE(sat) I F =20mA, I C = 1mA Over Ux1.0 BV CEO I C =0.1mA, I F =0 Over Lx1.0 BV ECO I E =10µA, I F =0 Over Lx1.0 Ver.1.0 Page 5 of 8
6 Packaging Box Dimensions (Units: mm) Packaging Tube Dimensions B 817 Direction of feed from reel Ver.1.0 Page 6 of 8
7 Inner box 342(13.464)± (13.385)±3.0 30(1.181)±3.0 Carton 353(13.898)±3.0 "K1-C" 363(14.291)±3.0 Notes: C/NO: PCS per reel, 10reels per Carton. DVC NO:BPC-817VS O'TY: PCS N.W.: KG G.W.: KG MEAS:363*353*365mm 2 All dimensions are in millimeters (inches). 3. Tolerance is ±0.10mm (0.004 ) unless otherwise specified. 4 Specifications are subject to change without notice. 365(14.370)±3.0 Ver.1.0 Page 7 of 8
8 DIP Soldering (Wave Soldering) Preheating : 120,Within120 ~180 sec. Operation heating : 255 ±5 Within 5 sec.260 (Max) Gradual Cooling (Avoid quenching). Temperature 120 Soldering heat Max. 260 Preheat 120~180 sec. 255 ±5 within 5 sec. Time Ver.1.0 Page 8of 8
佰鴻工業股份有限公司. BPC-817S. Outline Dimensions. Features: Parameter Symbol Rating Unit
Features: 1. Current transfer ratio (CTR: MIN. 50% at I F =5mA, V CE =5V) 2. High input-output isolation voltage (V ISO =5,000Vrms) 3. Response time (tr: TYP. 4µs at V CE =2V, I C =2mA, R L =100 Ω) 4.
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VOM68A Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package FEATURES Operating temperature from - 55 C to + C A 4 C SOP-4 mini-flat package CTR range 4 % to 6 %, I F = ma C 2 3 E Isolation
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4 Description Schematic The KPC355NT series consist of a photodarlington 1optically coupled to a gallium arsenide infrared-emitting diodes in a 4-pin Mini-Flat package. The input-output 2isolation voltage
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6 PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER EL301X, EL302X, EL305X Series Schematic 1 6 2 5 Features: Peak breakdown voltage - 250V: EL301X - 400V: EL302X - 600V: EL305X High isolation voltage between
More informationNEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES
NEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS26-, -2, -4 PS26L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE (BV) Vr.m.s.: normal specification products HIGH COLLECTOR TO EMITTER
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More information元佐电子 PC-17K1/2/4, PC-17L1/2/4, PC-17K1C(T/TN)
PC-7K/2/4, PC-7L/2/4, PC-7KC(T/TN). Description These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per channel. PC-7 K : DIP type (7.62mm) : One
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More informationProduct: Q814 Date: February 1, 2011 Page 1 of 13 Version# 1.2
Feature: High Isolation voltage between input and output (Viso = 5000V rms) Current transfer ration (CTR: Min. 20% at I F = ±1mA, V ce =5V) High collector-emitter voltage V CEO =80V Operating Temperature
More informationAnode mark. 2. High isolation voltage between input and output (V iso (rms) :5kV) 3. Compact dual-in-line package ± ±0.
PC87X Lead forming type (I type) and taping reel type (P type) are also available. (PC87XI/PC87XP) TÜ (DE88) approved type is also available as an option. (approved name:pc87) Features Outline Dimensions.
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Schematic Features Compliance Halogen Free. (Br
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More informationSYSTEM DEVICE UNIT ELECTRONIC COMPONENTS AND DEVICES DIVISION SHARP CORPORATION SPECIFICATION PHOTOCOUPLER PC817. Business dealing name PC817XNCSP9F
SPEC. No. ED-14P018A ISSUE April 27, 2015 SYSTEM DEVICE UNIT ELECTRONIC COMPONENTS AND DEVICES DIVISION SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR MODEL No. PHOTOCOUPLER PC817 Business dealing
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Features Fast response time High analytic Cut-off visible wavelength λp=940nm High sensitivity This product itself will remain within RoHS compliant version. Descriptions The consists of an infrared emitting
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Features Fast response time High sensitivity Thin and small package Pb free This product itself will remain within RoHS compliant version Description The consists of an infrared emitting diode and a silicon
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DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
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Features: 2,500 or 3,750 Vrms electrical isolation Choice of a Single and Dual LED Phototransistor or Photo Darlington Sensor Lowcost plastic DualInLine (DIP) package Agency Approvals: UL Certification
More informationParameter Symbol Rating Unit Forward current. IF 50 ma. P C 150 mw P tot 170 mw V iso 3.75 kv rms T opr - 30 to C.
PC4T PC4T Features. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio ( CTR: MIN. % at I F = ma ) 3. Mini-flat package 4. Applicable to soldering reflow. Available
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Features Wide gap between light emitter and detector(2.6 mm) High sensing accuracy Pb free The product itself will remain within RoHS compliant version. Descriptions The is a gallium arsenic infrared emitting
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