Photocoupler Product Data Sheet LTV-2X7-G (Half pitch series) Spec No. :DS Effective Date: 04/13/2017 Revision: - LITE-ON DCC RELEASE
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1 Product Data Sheet LTV-2X7-G (Half pitch series) Spec No. :DS Effective Date: 04/3/207 Revision: - LITE-ON DCC RELEASE BNS-OD-FC00/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: Fax: /
2 . DESCRIPTION. Features Current transfer ratio (CTR) : MIN. 50% at I F = 5mA, V CE = 5V High input-output isolation voltage. (Viso=3,750Vrms) Employs double transfer mold technology Safety approval: UL 577 VDE DIN EN (VDE ), CSA CA5A FIMKO RoHS Compliance: All materials be used in device are followed EU RoHS directive (No.2002/95/EC). ESD pass HBM 8000V/MM2000V MSL class Halogen Free.2 Applications Hybrid substrates that require high density mounting. Programmable controllers System appliances, measuring instruments /5
3 2. PACKAGE DIMENSIONS 2. LTV LTV LTV-247 Notes :. -digit year code, Example : 20 = A 2-digit work week ranging from 0 to Rank shall be or shall not be marked 3. VDE mark only appears on devices or ordered V option. 4. indicates Halogen free option. *All dimensions in millimeters. 2/5
4 3. TAPING DIMENSIONS 3. LTV LTV-27-TP Description Symbol Dimension in mm (inch) Tape wide W 2±0.3 (0.47) Pitch of sprocket holes P 0 4±0. (0.5) Distance of compartment Distance of compartment to compartment F 5.5±0. (0.27) P 2 2±0. (0.079) P 8±0. (0.35) 3/5
5 3.3 LTV-227 Description Symbol Dimension in mm (inch) Tape wide W 2±0.3 (0.47) Pitch of sprocket holes P 0 4±0. (0.5) Distance of compartment Distance of compartment to compartment F 5.5±0. (0.27) P 2 2±0. (0.079) P 8±0. (0.35) 4/5
6 3.4 LTV-247 Description Symbol Dimension in mm (inch) Tape wide W 6±0.3 (0.47) Pitch of sprocket holes P 0 4±0. (0.5) Distance of compartment Distance of compartment to compartment F 7.5±0. (0.27) P 2 2±0. (0.079) P 2±0. (0.35) 3.5 Quantities per Reel Package Type LTV-27 LTV-227 LTV-247 Quantities (pcs) /5
7 4. RATING AND CHARACTERISTICS 4. Absolute Maximum Ratings at Ta=25 C Photocoupler Parameter Symbol Rating Unit Forward Current I F 50 ma Reverse Voltage V R 6 V Input Power Dissipation P 70 mw Pulse Forward Current I FSM A Junction Temperature T J 25 o C Collector - Emitter Voltage V CEO 80 V Emitter - Collector Voltage V ECO 7 V Output Collector Current I C 50 ma Collector Power Dissipation P C 50 0 mw Junction Temperature T J 25 o C Total Power Dissipation P tot mw. Isolation Voltage V iso 3750 V rms Operating Temperature T opr -55 ~ + o C Storage Temperature T stg -55 ~ +50 o C 2. Soldering Temperature T sol 260 o C. AC For Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. () Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. 2. For Seconds 6/5
8 4.2 ELECTRICAL OPTICAL CHARACTERISTICS at Ta=25 C Parameter Symb ol Min. Typ. Max. Unit Test Condition Forward Voltage V F.2.4 V I F=20mA Input Reverse Current I R µa V R=4V Terminal Capacitance C t pf V=0, f=khz Collector Dark Current I CEO 0 na V CE=20V, I F=0 Output Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage BV CEO 80 V I C=0.mA, I F=0 BV ECO 7 V I E=µA, I F=0 Collector Current I C ma. Current Transfer Ratio CTR % I F=5mA V CE=5V Collector-Emitter Saturation Voltage V CE(sat) 0.4 V I F=8mA I C=2.4mA TRANSFER CHARACTERISTICS DC500V, Isolation Resistance R iso 5 Ω 40 ~ 60% R.H. Floating Capacitance Cf 0.6 pf V=0, f=mhz Response Time (Rise) tr 2 8 µs V CE=V, Response Time (Fall) tf 3 8 µs Turn-On Time T ON - 3 µs Turn-Off Time T OFF - 3 µs Turn-On Time t ON - 2 µs Storage Time Ts 25 µs Turn-Off Time t OFF 40 µs I C=2mA R L=0Ω, f=0hz V CE=5V, I C=6mA R L=.9KΩ I. CTR = C 0% I F 7/5
9 5. RANK TABLE OF CURRENT TRANSFER RATIO CTR MODEL NO. CTR Rank Min Max Condition A A 0 60 LTV-27 B C D A or B or C or D or No mark B LTV-227 C B or C or No mark LTV-247 No mark I F=5mA, V CE=5V, Ta=25 o C 8/5
10 6. CHARACTERISTICS CURVES (TYPICAL PERFORMANCE) Figure. Collector Power Dissipation vs. Ambient Temperature Photocoupler Figure 2. Forward Current vs. Ambient Temperature Collector Power Dissipation, Pc(mW) Ambient Temperature,Ta( ) Figure 3. Forward Current vs. Forward Voltage (ma) Forward Current, I F Ambient Temperature,Ta ( ) Figure 4. Forward Voltage Temperature Coefficient vs Forward Current Forward Current, I F ( ma ) 30 o C 50 o C 0 o C 75 o C 25 o C Ta=0 o C Forward Voltage,V F ( V ) Forward Voltage Temperature Coeffcient VF / Ta (mv/oc) Forward Current, I F (ma) Pulse Forward Current I (ma) FP Figure 5. Pulse Forward Current vs. Duty Cycle Ratio 000 Pulse width < = 0 s Ta= 25 o C 00 0 Pulse Forward Current, I FP ( ma ) 00 0 Figure 6. Pulse Forward Current vs. Pulse Forward Pulse Widths us Repetitive Frequency = 0Hz Ta = Duty Ratio Pulse Forward Voltage, V FP (V ) 9/5
11 Figure 7. Collector-Emitter Saturation Voltage vs. Forward Figure 8. Collector Current vs. Collector-Emitter 5 Current mA Collect-Emitt Voltage, V CE (V) mA ma 3mA 5mA 7mA ma Collector Currrent, Ic ( ma) mA 20mA P C (Max)=50mV ma Forward Current, I F (ma) 0 I F =5mA 0 5 Collector-Emitter Voltage, V CE ( V ) Figure 9. Collector Current vs. Small Collector-Emitter Collector Currrent, Ic ( ma Voltage 50mA 30mA 20mA ma 5mA IF=2mA Collector-Emitter Voltage, V CE ( V ) Normalized CTR 0. Figure. Normalized CTR vs. Forward Current Normalized to I F = 5mA, V CE = 5V T A =25 o C 0. 0 I F - Forward Current - ma Figure. Collector Dark Current vs. Ambient Temperature Figure 2. Current Transfer Ratio vs. Forward Current 00 Collector Dark Current, I CEO (A).00E-06.00E-08 V CE= 48V 24V V 5V CTR - Current Transfer Ratio - % 0 V CE = 0.4V 5V V.00E Ambient Temperature, Ta( O C) 0. 0 I F - Forward Current - ma /5
12 Figure 3. Normalized CTR vs. Ambient Temperature Figure 4. Collector-Emitter Saturation Voltage vs. Ambient Temperature Normalized CTR 0. Normalized to T A = 25 o C, V CE = 5V IF = ma IF = 5mA T A - Temperature - o C Collector-Emitter Saturation Voltage (V) I F =8mA I C =2.4mA I F=20mA I C =ma Ambinet Temperature, Ta ( o C) I F =ma I C =0.2mA Figure 5. Collector Current vs. Ambient Temperature Figure 6. Switching Time vs. Load Resistance 0 00 Collector Current, I C ( ma ) 25mA 20mA 5mA ma I F =0.5mA Ambient Temperature,Ta ( O C ) Figure 7. Switching Time vs. Ambient Temperature Switching Time ( µs ) 0 0. Ta = 25 Vcc = 5V R L =.9kΩ 0 Load Resistance, R L ( KO) Figure 8. Frequency Response Toff Ton Ts 0 T OFF 0 R L=0Ω Switching Time, t(us) 0. Vcc=5V I F=6mA R L=.9kΩ Ambient Temperature Ta( O C) T S T ON VO ( db ) Vcc=5V Ic=2mA Ta=25 o C 0 Frequency ( khz ) KΩ /5
13 7. SWITCHING TIME TEST CIRCUIT Photocoupler 8. TEMPERATURE PROFILE OF SOLDERING 8. IR Reflow soldering (JEDEC-STD-020C compliant) One time soldering reflow is recommended within the condition of temperature and time profile shown below. Do not solder more than three times. Profile item Conditions Preheat - Temperature Min (T Smin) - Temperature Max (T Smax) - Time (min to max) (ts) 50 C 200 C 90±30 sec Soldering zone - Temperature (T L) - Time (t L) Peak Temperature (T P) Ramp-up rate Ramp-down rate 27 C 60 ~0 sec 260 C 3 C / sec max. 3~6 C / sec 2/5
14 Ramp-up 20 sec TP 260 C Temperature ( C) Tsmin 50 C TL 27 C Tsmax 200 C 60-0 sec tl (Soldering) Ramp-down 25 C 60 ~ 20 sec ts (Preheat) Time (sec) 8.2 Wave soldering (JEDEC22A compliant) One time soldering is recommended within the condition of temperature. Temperature: 260+0/-5 C Time: sec. Preheat temperature:25 to 40 C Preheat time: 30 to 80 sec. 3/5
15 8.3 Hand soldering by soldering iron Allow single lead soldering in every single process. One time soldering is recommended. Photocoupler Temperature: 380+0/-5 C Time: 3 sec max. 9. RRECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit: mm 9. LTV LTV LTV-247 4/5
16 . NAMING RULE LTV- 2X7-()-( 2)-G DEVICE PART NUMBER () TAPING TYPE (TP or none) Please refer to orientation of taping on Page P3-P5 (2) CTR RANK Please refer to the CTR table on Page P8 (3) Halogen free option Example : LTV-27-TP-A-G LTV 2X7( )(2)-V-G DEVICE PART NUMBER () TAPING TYPE (TP or none) Please refer to orientation of taping on Page P3-P5 (2) CTR RANK Please refer to the CTR table on Page P8 (3) VDE order option (4) Halogen free option Example : LTV27TPA-V-G. NOTES LiteOn is continually improving the quality, reliability, function or design and LiteOn reserves the right to make changes without further notices. The products shown in this publication are designed for the general use in electronic applications such as office automation equipment, communications devices, audio/visual equipment, electrical application and instrumentation. For equipment/devices where high reliability or safety is required, such as space applications, nuclear power control equipment, medical equipment, etc, please contact our sales representatives. When requiring a device for any specific application, please contact our sales in advice. If there are any questions about the contents of this publication, please contact us at your convenience. The contents described herein are subject to change without prior notice. Immerge unit s body in solder paste is not recommended. 5/5
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Features: 1. Current transfer ratio (CTR: MIN. 50% at I F =5mA, V CE =5V) 2. High input-output isolation voltage (V ISO =5,000Vrms) 3. Response time (tr: TYP. 4µs at V CE =2V, I C =2mA, R L =100 Ω) 4.
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PC4T PC4T Features. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio ( CTR: MIN. % at I F = ma ) 3. Mini-flat package 4. Applicable to soldering reflow. Available
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Features: 4N2X series: 4N25, 4N26, 4N27, 4N28 4N3X series: 4N35, 4N36, 4N37, 4N38 H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5 High isolation voltage between input and output (Viso=5000 V rms) Creepage
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Features: Current transfer ratio (CTR:MIN.50% at I F =5mA,V CE =5V) High isolation voltage between input and output (V iso =5000 Vrms ) Compact dual-in-line package EL816:1-channel type Pb free UL approved
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PC87X Lead forming type (I type) and taping reel type (P type) are also available. (PC87XI/PC87XP) TÜ (DE88) approved type is also available as an option. (approved name:pc87) Features Outline Dimensions.
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Product Data Sheet Spec No.: DS50-2013-0040 Effective Date: 12/31/2013 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei
More informationDaPeng Elec-tech Co.,Ltd
Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
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Description The KPC354 series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in a 4-pin Mini-Flat
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Feature: Certification & Compliance: Halogen Free Pb free and RoHS Compliant High Isolation voltage between input and output UL recognized (File # E338132) (Viso = 5000V rms) VDE recognized (File # 40030457)
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4cosmo Description Schematic The KPC357 is DC-input single channel which 1contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin Mini-Flat 2package. The input-output
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More informationProduct: Q814 Date: February 1, 2011 Page 1 of 13 Version# 1.2
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Features Current transfer ratios in selected narrow range groups CNY17-1, CNY17F-1: 40-80% CNY17-2, CNY17F-2: 63-125% CNY17-3, CNY17F-3: 100-200% CNY17-4, CNY17F-4:160-320% High isolation voltage between
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Features Dual channel coupler Current transfer ratios offered in narrow ranges ELD205: 40-80% ELD206: 63-125% ELD207: 100-200% ELD211: > 20% ELD213: > 100% ELD217: > 100% High isolation voltage between
More information(*) DIN EN : successor standard of DIN VDE0884
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Features: Current transfer ratio (CTR:MIN.600% at I F =1mA,V CE =2V) High isolation voltage between input and output (Viso=5000 V rms ) Compact dual-in-line package EL815:1-channel type Pb free UL approved
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DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
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