List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...

Transcription

1 N-hannel SM MOSFET Frmsa MS List List... Package utline Features... 2 Mechanical data... Maximum ratings Electrical characteristics... 3 Rating and characteristic curves... 4 Pinning infrmatin... 5 Marking... Suggested slder pad layut Packing infrmatin... 6 Reel packing... 7 Suggested thermal prfiles fr sldering prcesses... 7 High reliability test capabilities Page 1 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8

2 N-hannel SM MOSFET Frmsa MS 60 N-hannel Enhancement Mde MOSFET Features Super high density cell design fr extremely lw RS(ON) High saturatin current capability In cmpliance with EU RHS 2002/95/E directives. Suffix "-H" indicates Halgen-free part, ex. -H. Exceptinal n-resistance and maximum current capability Rugged and reliable Mechanical data Epxy:UL94-0 rated flame retardant ase : Mlded plastic, SOT-23 Terminals : Slder plated, slderable per MIL-ST-750, Methd 2026 Munting Psitin : ny Weight : pprximated gram pplicatins Pwer Management in Nte bk Prtable Equipment Battery Pwered System Lad Switch Package utline 20 (3.04) 10 (2.80).084(2.10).068(1.70) (1.15) SOT (0.85) (0.50) (0.30) (B) () () (1.60) (1.20) 08 (2.75) (2.10) (1.30) (0.89) (0.67) (0.32) (8) (0.09) imensins in inches and (millimeters) Maximum ratings (T T =25 unless therwise nted) PRMETER Symbl MIN. TYP. MX. UNIT rain-surce vltage SS 60 rain-gate vltage(r = M Ω) GR 60 rain current-cntinuus T=25 (Nte 1) T =100 (Nte 1) -pulsed (Nte 2) I I M ±115 ±75 ±800 m Gate surce vltage-cntinuus ±20 -nn repetitive ( tp 50 μs) M ±40 pk Ttal pwer dissipatin FR-5 bard (Nte 3) T=25 P 225 mw erate abve 25 O 1.8 mw/ O Thermal resistance, junctin t ambient R θj 556 /W Ttal pwer dissipatin alumina substrate,( Nte 4) T=25 P 300 mw erate abve 25 O 2.4 mw/ O Thermal resistance, junctin t ambient R θj 417 /W Operatin junctin and strage temperature range T,T J STG Nte 1: The Pwer issipatin f the package may result in a lwer cntinuus drain current. 2: Pulse Test: Pulse Width 300 μs, uty ycle 2. 0%. 3: FR 5 = 1. 0 x x in. 4: lumina = 0. 4 x 0. 3 x in 99. 5% alumina Page 2 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8

3 N-hannel SM MOSFET Frmsa MS Electrical characteristics (T T =25 unless therwise nted) Off characteristics PRMETER ONITIONS Symbl MIN. TYP. MX. UNIT rain surce breakdwn vltage = 0, I = 10u (BR)SS 60 Zer gate vltage drain current = 60, = 0 S = 60, O = 0, T J = 125 S Gate bdy leakage current, frward = 20 I SS I SF u 0.5 m 1 u Gate bdy leakage current, reverse = -20 I SR -1 u On characteristics (Nte 1) PRMETER ONITIONS Symbl MIN. TYP. MX. UNIT Gate threshld vltage =, I = 250u S (th) 1.6 On-state drain current > 20, = S S(n) I (n) m Static drain-surce n-resistance = 10, I = 0.5 O = 10, I = 0.5, T = 125 = 5.0, I = 50m O = 5.0, I = 50m, T = 125 J J R S(n) Ω rain-surce n-vltage = 10, I = 0.5 S(n) 3.75 = 5.0, I = 50m Frward transcnductance >, I = 200m S S(n) g FS 80 mmhs ynamic characteristics PRMETER ONITIONS Symbl MIN. TYP. MX. UNIT Input capacitance iss Output capacitance S = 25, = 0, f = MHz ss pf Reverse transfer capacitance Switching characteristics (Nte 1) Turn-n delay time Turn-ff delay time PRMETER ONITIONS Symbl MIN. TYP. MX. UNIT Bdy drain dide ratings = 25, I = 500m, = 10, R G = 25, R L = 50 gen Ω Ω PRMETER ONITIONS Symbl MIN. TYP. MX. UNIT rss t d(n) t d(ff) ns ide frward n-vltage I = 115m, S = 0 S -1.5 Surce current cntinuus Bdy dide I S -115 m Surce current pulsed I SM -800 m Nte 1: Pules test : Pules width < 300us, duty cycle < 2% Switching Test ircuit Gate harge Test ircuit R L R L IN OUT R G G UT 1m G S R G S Page 3 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8

4 Rating and characteristic curves () Figure 1. Ohmic Regin Figure 2. Transfer haracteristics I, RIN URRENT () T= 25 = I, RIN URRENT () S= S, RIN SOURE OLTGE (), GTE SOURE OLTGE () R STTI RIN SOURE ON RESISTNE ), - - S ( n ( NORMLIZE ) Figure 3. Temperature versus Static rain-surce On-Resistance =10 I=200m T, TEMPERTURE( ) ), ( ) ( th THRESHOL OLTGE NORMLIZE Figure 4. Temperature versus Gate Threshld ltage S= I=m T, TEMPERTURE( ) Page 4 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8

5 N-hannel SM MOSFET Frmsa MS Pinning infrmatin Pin Simplified utline Symbl rain Pin PinG PinS rain Gate Surce Gate G S Surce Marking Type number Marking cde 702 M (Nte 1) Nte 1: M = Mnth cde Suggested slder pad layut SOT (0.95) 0.037(0.95) 0.079() 0.035(0.90) 0.031(0.80) imensins in inches and (millimeters) Page 5 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8

6 N-hannel SM MOSFET Frmsa MS Packing infrmatin P0 d P1 E F B W P 2 1 T W1 unit:mm Item Symbl Tlerance SOT-23 arrier width arrier length arrier depth Sprcket hle 13" Reel utside diameter B d " Reel inner diameter 7" Reel utside diameter 7" Reel inner diameter Feed hle diameter Sprcket hle psitin Punch hle psitin Punch hle pitch Sprcket hle pitch Embssment center Overall tape thickness Tape width Reel width E F P P0 P1 T W W1 min min Nte:evices are packed in accr dance with EI standar RS-481- and specificatins listed abve. Page 6 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8

7 N-hannel SM MOSFET Frmsa MS Reel packing PKGE REEL SIZE REEL (pcs) OMPONENT SPING (m/m) BOX (pcs) INNER BOX (m/m) REEL I, (m/m) RTON SIZE (m/m) RTON (pcs) PPROX. GROSS WEIGHT (kg) SOT-23 7" , *183* *262* , Suggested thermal prfiles fr sldering prcesses 1.Strage envirnment: Temperature=5 ~40 Humidity=55%±25% 2.Reflw sldering f surface-munt devices TP Tp ritical Zne TL t TP Ramp-up TL Tsmax TL Tsmin Temperature ts Preheat Ramp-dwn 25 t25 t Peak Time 3.Reflw sldering Prfile Feature Sldering nditin verage ramp-up rate(tl t T P) <3 /sec Preheat -Temperature Min(Tsmin) 150 -Temperature Max(Tsmax) 200 -Time(min t max)(t s) 60~120sec Tsmax t TL -Ramp-upRate <3 /sec Time maintained abve: -Temperature(T L) 217 -Time(t L) 60~260sec Peak Temperature(T P) 255-0/ + 5 Time within 5 f actual Peak Temperature(t P) 10~30sec Ramp-dwn Rate <6 /sec Time 25 t Peak Temperature <6minutes Page 7 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8

8 N-hannel SM MOSFET Frmsa MS High reliability test capabilities Item Test nditins Reference Ta= 150 gs=0. 8 x BS fr 1000hurs JES High Temperature Gate Bias 2. High Temperature Reverse Bias Ta= 150 ds= 0. 8 x BSS fr 1000hurs JES Slder ability Test Temp= 245 fr 5sec JES22-B Pressure ker Test Ta= 121 / 100% RH Pressure= 2tm fr 168hurs JES Temperature ycle Test - 65 / 10min~ 150 / 10min Transfer< 5min. ttal 1000 cycles. JES B 6. Temperature Humidity Test Ta= 85 Humidity= 85% RH fr 1000hurs JES B 7. High Temperature Strage Test Ta= 150 fr 1000hurs JES22-B103-B Page 8 cument I Issued ate Revised ate Revisin Page. S /02/ /06/09 H 8