DCX4710H. General Description. Features. Mechanical Data. Maximum Ratings: Total Device. 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

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DX471H 1mA DUAL OMPLEMENTARY PRE-IASED TRANSISTORS General Description DX471H is est suited for applications where the load needs to e turned on and off using micro-controllers, comparators or other

1 DX471H 1mA DUAL OMPLEMENTARY PRE-IASED TRANSISTORS General Description DX471H is est suited for applications where the load needs to e turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of load. It features a discrete pre-iased PNP transistor which can support continuous maximum current of 1 ma. It also contains a pre-iased NPN transistor which can e used as a control and can e iased using a higher supply. The component devices can e used as a part of circuit or as stand alone discrete devices Features uilt in iasing Resistors Epitaxial Planar Die onstruction Ideally Suited for Automated Assemly Processes Lead Free y Design/RoHS ompliant (Note 1) "Green" Device (Note 2) SOT-563 Mechanical Data ase: SOT-563 ase Material: Molded Plastic. "Green Molding" ompound. UL Flammaility lassification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminal onnections: See Fig. 2 Terminals: Finish - Matte Tin annealed over opper leadframe. Solderale per MIL-STD-22, Method 28 Marking & Type ode Information: See Page 7 Ordering Information: See Page 7 Weight:.5 grams (approximate) Schematic and Pin onfiguration Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) R4 (NOM) Q1 PNP 1KΩ 47KΩ Q2 NPN 1KΩ 1KΩ Maximum Ratings: Total unless otherwise specified haracteristic Symol Value Unit Output urrent I out 1 ma Power Dissipation (Note 3) P d 15 mw Power Derating Factor aove 45 P der 1.43 mw/ Junction Operation and Storage Temperature Range P d -55 to +15 Thermal Resistance, Junction to Amient Air (Note 3) (Equivalent to one heated junction of PNP R θja 833 /W Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can e found on our wesite at 3. Device mounted on FR-4 P, 1 inch x.85 inch x.62 inch; as per Diodes Inc. suggested pad layout document AP21 on our wesite at DS3871 Rev of 7 DX471H

2 Su-omponent Device Pre-iased PNP Transistor unless otherwise specified haracteristic Symol Value Unit ollector-ase Voltage V O -5 V ollector-emitter Voltage V EO -5 V Supply Voltage V -5 V Input Voltage V IN +6 to -4 V Output urrent (dc) I (max) -1 ma Su-omponent Device Pre-iased NPN Transistor unless otherwise specified haracteristic Symol Value Unit ollector-ase Voltage V O 5 V ollector-emitter Voltage V EO 5 V Supply Voltage V 5 V Input Voltage V IN -1 to +4 V Output urrent (dc) I (max) 1 ma Electrical haracteristics: Pre-iased PNP Transistor unless otherwise specified haracteristic Symol Min Typ Max Unit Test ondition OFF HARATERISTIS ollector-ase ut Off urrent I O -1 na V = -5V, I E = ollector-ase reakdown Voltage V (R)O -5 V I = -1μA, I E = ollector-emitter reakdown Voltage V (R)EO -5 V I = -4mA, I = Input Off Voltage V I(OFF) -.3 V V E = -5V, I = -1μA Output Off urrent I O(OFF) -.5 μa V = -5V, V I = V ON HARATERISTIS D urrent Gain h FE 8 V E = -5V, I = -5mA ollector-emitter Saturation Voltage V E(sat) -.25 V I = -1mA, I = -.3mA Output On Voltage V O(ON) V I O /I I = -1mA/-.5mA Input On Voltage (Load is present) V I(ON) V V O = -.3V, I = -2mA Input urrent I I -.88 ma V I = -5V Input Resistor +/- 3% (ase) ΔR KΩ Pull-up Resistor (ase to Vcc supply) R KΩ Resistor Ratio Δ(R2/R1) 2 2 % SMALL SIGNAL HARATERISTIS Transition Frequency (gain andwidth product) f T 25 MHz V E = -1V, I E = -5mA, f = 1MHz *Pulse Test: Pulse width, tp<3 us, Duty ycle, d<=.2 DS3871 Rev of 7 DX471H

3 Pre-iased NPN Transistor unless otherwise specified haracteristic Symol Min Typ Max Unit Test ondition OFF HARATERISTIS ollector-ase ut Off urrent I O 1 na V = 5V, I E = ollector-ase reakdown Voltage V (R)O 5 V I = 1μA, I E = ollector-emitter reakdown Voltage V (R)EO 5 V I = 2mA, I = Input Off Voltage V I(OFF) V V E = 5V, I = 1μA Output urrent ON HARATERISTIS I O(OFF).5 μa V = 5V, V I = V D urrent Gain h FE 35 V E = 5V, I = 5mA ollector-emitter Saturation Voltage V E(sat).25 V I = -1mA, I = -.3mA Output On Voltage V O(ON).1.3 V I O /I I = 1mA/.5mA Input On Voltage V I(ON) V V O =.3V, I = 2mA Input urrent I I.88 ma V I = 5V Input Resistor +/- 3% (ase) R KΩ Resistor Ratio SMALL SIGNAL HARATERISTIS (R2/R1) Transition Frequency (Gain andwidth product) f T 25 MHz V E = 1V, I E = 5mA, f = 1MHz *Pulse Test: Pulse width, tp<3 us, Duty ycle, d<=.2 Typical am = 25 unless otherwise specified P D, POWER DISSIPATION (mw) T A, AMIENT TEMPERATURE ( ) Fig. 1 Power Derating urve (Note 3) Notes: 3. Device mounted on FR-4 P, 1 inch x.85 inch x.62 inch; as per Diodes Inc. suggested pad layout document AP21 on our wesite at DS3871 Rev of 7 DX471H

4 haracteristics urves of PNP Transistor am = 25 unless otherwise specified I, OLLETOR URRENT (A) l = 1.25mA l = 2mA l = 1.5mA l = 1mA l = 1.75mA l =.75mA l = 2.25mA l =.5mA l =.25mA h FE, D URRENT GAIN V = 5V E V E, OLLETOR EMITTER VOLTAGE (V) Fig. 2 V E vs. I I, OLLETOR URRENT (ma) Fig. 3 D urrent Gain vs. I V E(SAT), OLLETOR VOLTAGE (V) V E(SAT), OLLETOR VOLTAGE (V) I, OLLETOR URRENT (ma) Fig. 4 I vs. VE(SAT) I, OLLETOR URRENT (ma) Fig. 5 I vs. VE(SAT) DS3871 Rev of 7 DX471H

5 I, OUTPUT URRENT (ma) Fig. 6 Input Voltage vs. ollector urrent haracteristics urves of NPN Transistor am = 25 unless otherwise specified h FE, D URRENT GAIN V = 5V E I, OLLETOR URRENT (A) l = 1.25mA l = 1.5mA l = 1mA l = 1.75mA l =.75mA l = 2mA l =.5mA l =.25mA.1 I, OLLETOR URRENT (ma) Fig. 7 D urrent Gain vs. I V E, OLLETOR EMITTER VOLTAGE (V) Fig. 8 V E vs. I DS3871 Rev of 7 DX471H

6 V E(SAT), OLLETOR EMITTER SATURATION VOLTAGE (V) V E(SAT), OLLETOR EMITTER SATURATION VOLTAGE (V) I, OLLETOR URRENT (ma) Fig. 9 I vs. V E(SAT) I, OLLETOR URRENT (ma) Fig. 1 I vs. V E(SAT) V =.3V E V I(ON), INPUT VOLTAGE (V) I, OLLETOR URRENT (ma) Fig. 11 Input Voltage vs. Output urrent DS3871 Rev of 7 DX471H

7 Ordering Information (Note 5) Device Marking ode Packaging Shipping DX471H-7 2 SOT-563 3/Tape & Reel Notes: 5. For Packaging Details, go to our wesite at Marking Information 2YM 2 = Product Type Marking ode YM = Date ode Marking Y = Year e.g., T = 26 M = Month e.g., 9 = Septemer Fig. 12 Date ode Key Year ode T U V W X Y Z Month Jan Fe Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D IMPORTANT NOTIE Diodes Incorporated and its susidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liaility arising out of the application or use of any product descried herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our wesite, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS3871 Rev of 7 DX471H

DDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

DDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR DD (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFAE MOUNT TRANSISTOR Features Epitaxial Planar Die onstruction omplementary PNP Types Available (DDA) Built-In Biasing Resistors Lead Free/RoHS ompliant