HE8050S NPN EPITAXIAL PLANAR TRANSISTOR

Transcription

1 Page No. : /5 NPN EPITAXIAL PLANAR TRANSISTOR Description The is designed for general purpose amplifier applications. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature ~ +5 C Junction Temperature C Maximum Maximum Power Dissipation Total Power Dissipation (T A =25 C) mw Maximum Voltages and Currents (T A =25 C) V CBO Collector to Base Voltage V V CEO Collector to Emitter Voltage... 2 V V EBO Emitter to Base Voltage... 5 V I C Collector Current... 7 ma Electrical Characteristics (T A =25 C) Symbol Min. Typ. Max. Unit Test Conditions BV CBO V I C =ua, I E BV CEO V I C =ma, I B BV EBO V I E =ua, I C I CBO - - ua V CB =2V, I E I EBO - - na V EB =5V, I C *V CE(sat) V I C.5A, I B =5mA V BE(on) - - V V CE =5mA *h FE - 5 V CE =5mA *h FE2-4 - V CE =5mA f T MHz V CE =V, I C =2mA, f=mhz Cob - - pf V CB =V, f=mhz, I E *Pulse Test: Pulse Width 38us, Duty Cycle 2% Classifications of hfe Rank C C D D E h FE h FE2 - >5 - >5 -

2 Page No. : 2/5 Characteristics Curve VCE=V Current Gain & Collector Current Saturation Voltage & Collector Current IC=IB hfe Saturation Voltage (V)... Saturation Voltage & Collector Current. ON Voltage & Collector Current IC=IB VCE=V Saturation Voltage (V). ON Voltage (V)..... Cutoff Frequency & Collector Current Capacitance & Reverse-Biased Voltage Cutoff Frequency (MHz)... Capacitance (pf) VCE=2V Collector Current (ma). Reverse Biased Voltage (V)

3 Page No. : 3/5 Safe Operating Area 7 PD-Ta 6 Collector @PT=s Forward Voltage (V) Power Dissipation-PD (mw) Ambient Temperature-Ta ( o C)

4 Page No. : 4/5 TO-92 Dimension F B C E A 2 H I 3 D α α2 α3 G 3-Lead TO-92 Plastic Package HSMC Package Code: A Marking: Pb Free Mark Pb-Free: ". " (Note) Normal: None Date Code H E 85S Control Code Note: Green label is used for pb-free packing Pin Style:.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn6/Pb4 (Normal), Sn/3.Ag/.5Cu or Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V- DIM Min. Max. A B C D E - *.27 F G H - *2.54 I - *.27 α - *5 α2 - *2 α3 - *2 *: Typical, Unit: mm TO-92 Taping Dimension H2 H2 T2 T T L L P H2AH2A FF2 P A P2 D2 D D H3 H4 H W H W DIM Min. Max. A D D D F,F H H H2 - H2A - H3-27 H4-2 L - L P P P T -.55 T -.42 T W W Unit: mm Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. HSMC reserves the right to make changes to its products without notice. HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): F.,No. 6, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: Fax: , Factory : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: ~5 Fax:

5 Page No. : 5/5 Soldering Methods for HSMC s Products. Storage environment: Temperature= o C~ Humidity=65%±5% 2. Reflow soldering of surface-mount devices Figure : Temperature profile TP Ramp-up tp Critical Zone TL to TP TL Tsmax tl Temperature Tsmin ts Preheat Ramp-down 25 t to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T L to T P ) <3 o C/sec <3 o C/sec Preheat - Temperature Min (Ts min ) - Temperature Max (Ts max ) - Time (min to max) (ts) o C 5 o C 6~2 sec 5 o C 2 o C 6~8 sec Tsmax to T L - Ramp-up Rate <3 o C/sec <3 o C/sec Time maintained above: - Temperature (T L ) - Time (t L ) 83 o C 6~5 sec 27 o C 6~5 sec Peak Temperature (T P ) 24 o C +/-5 o C 26 o C +/-5 o C Time within 5 o C of actual Peak Temperature (t P ) ~3 sec 2~4 sec Ramp-down Rate <6 o C/sec <6 o C/sec Time to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245 o C ±5 o C 5sec ±sec Pb-Free devices. 26 o C +/-5 o C 5sec ±sec