HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR

Transcription

1 Page No. : /5 NPN EPITAXIAL PLANAR TRANSISTOR Description The is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. Features High Speed Switching Low Saturation Voltage High Reliability TO-220 Absolute Maximum Ratings (T A =25 C) Maximum Temperatures Storage Temperature ~ +50 C Junction Temperature C Maximum Maximum Power Dissipation Total Power Dissipation (T C =25 C) W Maximum Voltages and Currents (T A =25 C) V CEX Collector to Emitter Voltage V V CEO Collector to Emitter Voltage V V EBO Emitter to Base Voltage... 9 V I C Collector Current (Continuous)... 4 A I B Base Current (Continuous)... 2 A Electrical Characteristics (T A =25 C) Symbol Min. Typ. Max. Unit Test Conditions BV CEX V I C =ma, V BE(off) =.5V BV CEO V I C =ma I EBO - - ma V EB =9V I CEX - - ma V CE =700V, V BE(off) =.5V *V CE(sat) mv I C =A, I B =200mA *V CE(sat) V I C =2A, I B =500mA *V CE(sat)3 - - V I C =4A, I B =A *V BE(sat) V I C =A, I B =200mA *V BE(sat) V I C =2A, I B =500mA *h FE 5-25 I C =2A, V CE =5V *Pulse Test: Pulse Width 380us, Duty Cycle 2%

2 Page No. : 2/5 Characteristics Curve Current Gain & Collector Current 00 IC=5IB hfe VCE=5V IC=4IB IC=5IB Capacitance & Reverse-Biased Voltage IC=4IB 0 Capacitance (pf) Cob Reverse-Biased (V)

3 Page No. : 3/5.0 Switching time vs Collector Current Vcc=25V, IC=2A, IB=IB2=0.4A Safe Operating Area Tstg PT=uS Switching Time(us)....0 Ton Collector Current-I C (A) 0. PT=s PT=ms Toff PT=ms Collector Current(A) Forward Voltage-VCE (V)

4 Page No. : 4/5 TO-220AB Dimension D G L A I Tab P B H E 3 2 F J O M C K N Marking: Pb Free Mark Pb-Free: ". " (Note) Normal: None Date Code H LB 25HE Control Code Note: Green label is used for pb-free packing Pin Style:.Base 2.Collector 3.Emitter Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. Max. A B C D.5.39 E F G H - *6.25 I - *3.83 J K L M.4.40 N - *2.54 O P *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. HSMC reserves the right to make changes to its products without notice. HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): F.,No. 6, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: Fax: , Factory : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: ~5 Fax:

5 Page No. : 5/5 Soldering Methods for HSMC s Products. Storage environment: Temperature= o C~35 o C Humidity=65%±5% 2. Reflow soldering of surface-mount devices Figure : Temperature profile TP Ramp-up tp Critical Zone TL to TP TL Tsmax tl Temperature Tsmin ts Preheat Ramp-down 25 t to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T L to T P ) <3 o C/sec <3 o C/sec Preheat - Temperature Min (Ts min ) - Temperature Max (Ts max ) - Time (min to max) (ts) o C 50 o C 60~20 sec 50 o C 200 o C 60~80 sec Tsmax to T L - Ramp-up Rate <3 o C/sec <3 o C/sec Time maintained above: - Temperature (T L ) - Time (t L ) 83 o C 60~50 sec 27 o C 60~50 sec Peak Temperature (T P ) 240 o C +0/-5 o C 260 o C +0/-5 o C Time within 5 o C of actual Peak Temperature (t P ) ~30 sec 20~40 sec Ramp-down Rate <6 o C/sec <6 o C/sec Time to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245 o C ±5 o C 5sec ±sec Pb-Free devices. 260 o C +0/-5 o C 5sec ±sec