BZX55C-BS SERIES 4.7V to 36V
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1 BZX55C-BS SERIES 4.7V to 36V SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * DO-35 Glass Axial Package * Best Suited For Industrial, Military and Space Applications. * The Glass Passivated Diode Chip in The Hermetically Sealed Glass Package with Double Studs Provides Excellent Stability and Reliability. DO (38.1) 1.00 (.4).022 (5).007 (0.46) DIA..0 (8).1 (3.05).089 (2.28).060 (1.53) DIA. IMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at o C ambient temperature unless otherwise specified (38.1) 1.00 (.4) Dimensions in inches and (millimeters) ABSOLUTE IMUM RATINGES TA = o C unless otherwise noted ) RATINGS SYMBOL VALUE Power Dissipation (Note 1) PTA 500 mw Surge Power Dissipation Pulse Width =10 ms PS W Junction Temperature TJ 175 o C Storage Temperature TSTG -65 to +175 o C THERMAL RESISTANCE TA = o C unless otherwise noted ) DESCRIPTION SYMBOL TYP. Thermal Resistance Junction to Ambient (Note 1) R θja 300 o C/W ELECTRICAL CHARACTERISTICS TA = o C unless otherwise noted ) CHARACTERISTICS SYMBOL TYP. Forward Voltage at IF= 100mA Notes: 1. On infinite heatsink with 4mm lead length. 2. "Fully RoHS Compliant", "100% Sn plating (Pb-free)". VF 1.0 Volts VD 07-11
2 ELECTRICAL CHARACTERISTICS O C unless otherwise specified) I I ZT A = O C BZX55C 4.7BS BZX55C 4.7BSA BZX55C 4.7BSB BZX55C 4.7BSC BZX55C 5.1BS BZX55C 5.1BSA BZX55C 5.1BSB BZX55C 5.1BSC BZX55C 5.6BS BZX55C 5.6BSA BZX55C 5.6BSB BZX55C 5.6BSC BZX55C 6.2BS BZX55C 6.2BSA BZX55C 6.2BSB BZX55C 6.2BSC BZX55C 6.8BS BZX55C 6.8BSA BZX55C 6.8BSB BZX55C 6.8BSC BZX55C 7.5BS BZX55C 7.5BSA BZX55C 7.5BSB BZX55C 7.5BSC BZX55C 8.2BS BZX55C 8.2BSA BZX55C 8.2BSB BZX55C 8.2BSC BZX55C 9.1BS BZX55C 9.1BSA BZX55C 9.1BSB BZX55C 9.1BSC BZX55C 10BS BZX55C 10BSA BZX55C 10BSB BZX55C 10BSC BZX55C 11BS BZX55C 11BSA BZX55C 11BSB BZX55C 11BSC V7 4V7A 4V7B 4V7C 5V1 5V1A 5V1B 5V1C 5V6 5V6A 5V6B 5V6C 6V2 6V2A 6V2B 6V2C 6V8 6V8A 6V8B 6V8C 7V5 7V5A 7V5B 7V5C 8V2 8V2A 8V2B 8V2C 9V1 9V1A 9V1B 9V1C 10V 10VA 10VB 10CV 11V 11VA 11VB 11VC
3 ELECTRICAL CHARACTERISTICS O C unless otherwise specified) I I ZT A = O C BZX55C 12BS BZX55C 12BSA BZX55C 12BSB BZX55C 12BSC BZX55C 13BS BZX55C 13BSA BZX55C 13BSB BZX55C 13BSC BZX55C 15BS BZX55C 15BSA BZX55C 15BSB BZX55C 15BSC BZX55C 16BS BZX55C 16BSA BZX55C 16BSB BZX55C 16BSC BZX55C 18BS BZX55C 18BSA BZX55C 18BSB BZX55C 18BSC BZX55C BS BZX55C BSA BZX55C BSB BZX55C BSC BZX55C 22BS BZX55C 22BSA BZX55C 22BSB BZX55C 22BSC BZX55C 22BSD BZX55C 24BS BZX55C 24BSA BZX55C 24BSB BZX55C 24BSC BZX55C 24BSD BZX55C 27BS BZX55C 27BSA BZX55C 27BSB BZX55C 27BSC BZX55C 27BSD V 12VA 12VB 12VC 13V 13VA 13VB 13VC 15V 15VA 15VB 15VC 16V 16VA 16VB 16VC 18V 18VA 18VB 18VC V VA VB VB 22VV 22VA 22VB 22VC 22VD 24V 24VA 24VB 24VC 24VD 27V 27VA 27VB 27VC 27VD
4 ELECTRICAL CHARACTERISTICS O C unless otherwise specified) I I ZT A = O C BZX55C 30BS BZX55C 30BSA BZX55C 30BSB BZX55C 30BSC BZX55C 30BSD BZX55C 33BS BZX55C 33BSA BZX55C 33BSB BZX55C 33BSC BZX55C 33BSD BZX55C 36BS BZX55C 36BSA BZX55C 36BSB BZX55C 36BSC BZX55C 36BSD V 30VA 30VB 30VC 30VD 33V 33VA 33VB 33VC 33VD 36V 36VA 36VB 36VC 36VD NOTE: Pulse Condition : ms < tp < 50mS, Duty Cycle < 2%.
5 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
BZX84C-BS SERIES 4.7V to 36V
BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes SYMBOL I O I FSM. R θ JC.
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 2. Amperes RS21 THRU RS27 FEATURES * Ideal for printed circuit board * Surge overload rating: 5 amperes peak * Weight:
SILICON PLANAR ZENER DIODE. Vrm I FM I O. Maximum Average Forward Rectified Current I FSM I 2 T. Trr C T. pf Maximum Power Dissipation P D T J,T STG
SILICON PLANAR ZENER DIODE FEATURES * Fast Switching Device(T RR
SYMBOL. UNITS Maximum Recurrent Peak Reverse Voltage V RRM V RMS I O I FSM I 2 T. Viso T J, T STG
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 to CURRENT 8. Amperes RS8M THRU RS87M FEATURES * Low leakage * Low forward voltage * Surge overload rating : amperes peak * Mounting
SURFACE MOUNT ZENER DIODE. VOLTAGE RANGE 2.4 to 43 Volts POWER RATING 500 mwatts
SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 2.4 to 43 Volts POWER RATING 500 mwatts MMSZ468 MMSZ477 FEATURES * Wide Zener Reverse Voltage Range : 2.4V to 43V * 500mW Rating on FR4 or FR5 Board * Small Package
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Amperes V RRM V RMS V DC I O I FSM
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 4. Amperes RS41L THRU RS47L FEATURES * Ideal for printed circuit board * Surge overload rating: 15 amperes peak * Mounting
RC205 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER. VOLTAGE 600 Volts CURRENT 2.0 Amperes RC-2
RC25 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE 6 CURRENT 2. Amperes FEATURES * Reverse voltage to 6v * Surge overload ratings to 5 amperes peak * Good for printed circuit board assembly
SURFACE MOUNT SUPER FAST RECTIFIER. VOLTAGE RANGE 50 to 400 Volts CURRENT 0.5 Ampere. 300 Maximum RMS Voltage. 210 Maximum DC Blocking Voltage
SURFACE MOUNT SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 0.5 Ampere 05E1L THRU 05E6L FEATURES * High reliability * Low leakage * Low forward voltage * High current capability * Super fast
SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR 1500 WATT PEAK POWER 6.5 WATTS STEADY STATE
SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR 15 WATT PEAK POWER 6.5 WATTS STEADY STATE TVS TFMCJ SERIES FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction * 15
SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATTS STEADY STATE SYMBOL IPPM P M(AV) I FSM. I 2 t 6.64 A 2 /Sec T J, T STG
SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR 4 WATT PEAK POWER 1. WATTS STEADY STATE TVS P4FMAJ SERIES FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction * 4
HDB208LS. SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE 1000 Volts CURRENT 2.0 Ampere DB-LS FEATURES MECHANICAL DATA
HDB28LS SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE 1 CURRENT 2. Ampere FEATURES * Glass passivated device * Good for automation insertion * Low leakage current * Ideal for
SYMBOL V RRM V RMS. Volts Maximum Average Forward Output Current at T A = 40 o C V DC I O I FSM. A 2 S 40 Typical Thermal Resistance (Note 2) TJ,TSTG
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 2. Amperes DB21S THRU DB27S FEATURES * Good for automation insertion * Surge overload rating - 6 amperes peak * Ideal
SURFACE MOUNT FAST RECOVERY RECTIFIER SYMBOL V RRM V RMS V DC I O I FSM T J, T STG SYMBOL. Maximum Instantaneous Forward Voltage at 1.
SURFACE MOUNT FAST RECOVERY RECTIFIER VOLTAGE RANGE 5 to 6 Volts CURRENT.5 Ampere 5F THRU 5F5 FEATURES * Fast switching * Low leakage * Low forward voltage drop * High current capability * High currenf
* Low cost * Low leakage * Low forward voltage drop * High current capability DO-15 R2500F R3000F R4000F R5000F VRRM VRMS VDC IFSM. I 2 t 3.
HIGH VOLTAGE FAST RECOVER RECTIFIER R25F THRU R5F VOLTAGE RANGE 25 to 5 CURRENT.2 Ampere FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability DO-15 MECHANICAL DATA * Case:
SUPER LOW Vf SCHOTTKY BARRIER RECTIFIER SYMBOL FML120B V RRM V RMS V DC I O C J T J T STG
SUPER LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 2 to 4 CURRENT 1. Ampere FML12B THRU FML14B FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability
SILICON RECTIFIER SYMBOL. UNITS Maximum Recurrent Peak Reverse Voltage V RRM V RMS V DC I O I FSM I 2 T C J
SILICON RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 3. Amperes 1N54 THRU 1N548 FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability DO-21AD MECHANICAL DATA * Case: Molded plastic
SURFACE MOUNT SILICON RECTIFIER. VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere SYMBOL V RRM V RMS V DC I O I R IFSM. I 2 t
SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 5 to 1 Volts CURRENT Ampere SA1 THRU SA7 FEATURES * Ideal for surface mounted applications * Low leakage current *Metallurgically bonded construction *Mounting
DEVICES FOR BIPOLAR APPLICATIONS. For Bidirectional use C or CA suffix for types 3KP5.0 thru 3KP110 Electrical characteristics apply in both direction
TVS 3KP SERIES GPP TRANSIENT VOLTAGE SUPPRESSOR 3 WATT PEAK POWER 8. WATTS STEADY STATE FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction * 3 watt surage capability
VOLTAGE RANGE 50 to 600 Volts CURRENT 10.0 Amperes. UNITS Maximum Recurrent Peak Reverse Voltage V RRM V RMS V DC I O I FSM. I 2 t 93.
GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE 5 to 6 Volts CURRENT 1. Amperes SF11P THRU SF17P FEATURES * Low Profile Design for Smart Phone Charger * Ideal for SMT Mounting * High Forward Surge
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 1000 Volts CURRENT 4.0 Ampere SYMBOL
MSB47S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 1 CURRENT 4. Ampere FEATURES * Good for automation insertion * Ideal for printed circuit board * Reliable low cost construction
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER SYMBOL
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 5 to 6 CURRENT 1. Ampere FEATURES * Glass passivated device * Ideal for surface mounted applications * Low leakage current * Metallurgically
SURFACE MOUNT SUPER FAST RECTIFIER SYMBOL SE1 SE2 V RRM V RMS V DC I O C J T J T STG
SURFACE MOUNT SUPER FAST RECTIFIER VOLTAGE RANGE 5 to 4 CURRENT. Ampere SE THRU SE6 FEATURES * High reliability * Low leakage * Low forward voltage * High current capability * Super fast switching speed
HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes I O I 2 T R θ JL R θ JA C J T J T STG
HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 3. Amperes HER31 THRU HER38 FEATURES * Low power loss,high efficiency * Low leakage * Low forward voltage drop * High current capability *
VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes. UNITS Maximum Recurrent Peak Reverse Voltage SYMBOL V RRM V RMS V DC I O I FSM.
GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE to 6 CURRENT 3. Amperes SF3 THRU SF37 FEATURES * High reliability * Low leakage * Low forward voltage * High current capability * Super fast switching
GPP TRANSIENT VOLTAGE SUPPRESSOR 3000 WATT PEAK POWER 7.5 WATTS STEADY STATE SYMBOL. W Steady State Power Dissipation at T L = 75 O C P M(AV) I FSM
GPP TRANSIENT VOLTAGE SUPPRESSOR 3 WATT PEAK POWER 7.5 WATTS STEADY STATE TVS 3KPSMC SERIES FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction *3 watt surage capability
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere SYMBOL V RRM V RMS V DC I O. C/W Typical Thermal Resistance (Note 1) R θ JL C J T J T STG
SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 1. Ampere FM41W THRU FM47W FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * Mounting
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere VRRM VRMS VDC IFSM I 2 T. (Note 2) R JL (Note 3) R JA TJ, TSTG SYMBOL
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 5 to 1 Volts CURRENT 1. Ampere FFM11 THRU FFM17 FEATURES * Glass passivated device * Ideal for surface mounted applications
HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes SYMBOL V RRM V RMS V DC HER201 I O I 2 T C J T J
HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 2. Amperes HER21 THRU HER28 FEATURES * Low power loss,high efficiency * Low leakage * Low forward voltage drop * High current capability * High speed
HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes I O I 2 T R JC 15 C J Operating Temperature Range T J
HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 5 to CURRENT 2. Amperes HER21 THRU HER28 FEATURES * Low power loss,high efficiency * Low leakage * Low forward voltage drop * High current capability * High speed
SA Series. Working Voltage: 5.0 to 190 V Peak Pulae Power: 500 W 500W AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSOR DO-15 PACKAGE
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1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System
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Zener Diodes with Surge Current Specification
Zener Diodes with Surge Current Specification 17249 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.6 to 200 V Test current I ZT 5 to 0 ma V BR 7 to 188 V V WM 6.2 to 160 V P PPM 150 W T
N-Channel 20-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID(A) 7..5 Typical Applications:
4 1N5400G-K - 1N5408G-K Taiwan Semiconductor. 3A, 50V V Glass Passivated Rectifier
4 1N5400-1N5408 3A, 50V - 0V Glass Passivated Rectifier FEATURES Glass passivated chip junction High current capability, Low V F High reliability High surge current capability Low power loss, high efficiency
General Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-4AL (DO-4) MAJOR RATINGS AND CHARACTERISTICS I F(AV).0 A V RRM V to 00 V I FSM (8.3 ms sine-wave) A I FSM (square wave t p = ms) 45 A V F. V I R 5.0
ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack
Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage and high breakdown voltage. This device e2 is protected by a PN junction guard ring against
Fast Switching Plastic Rectifier
Fast Switching Plastic Rectifier TO-0AC ITO-0AC FEATURES Glass passivated chip junction Superfast recovery time for high efficiency Low leakage current High forward surge capability BY9 Series CASE TO-63AB
2A, 50V - 600V Glass Passivated Super Fast Rectifier
SF21 - SF28 2A, 50V - 600V Glass Passivated Super Fast Rectifier FEATURES Glass passivated chip junction High efficiency, Low V F High current capability High surge current capability Low power loss Compliant
1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes
W, V - 2V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Low profile package - Built-in strain relief - Low inductance - Typical I R less than 5μA above V -
BAS19-V / 20-V / 21-V
Small Signal Switching Diodes, High Voltage BAS19-V / 20-V / 21-V Features Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. e3 These diodes
N-Channel 700-V (D-S) MOSFET
AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:
2A, 800V V Glass Passivated High Efficient Rectifier
2A, 800V - 1000V Glass Passivated High Efficient Rectifier FEATURES Glass passivated chip junction High efficiency, Low V F High current capability High surge current capability Low power loss Compliant
PFC Device Corporation
PFC Device Corporation F I B 20A 120V HPTR Single Schottky Rectifier Major ratings and characteristics Values Units I F(AV) Rectangular Waveform 20 A V RRM 120 V V F @ 20A, Tj=125 o C 0.73 V, typ. T J
Type Ordering Code Remarks
Silicon Epitaxial Planar Z Diodes BZX85C... Features Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications Voltage stabilization
Schottky Diode, 2 x 0.1 A
Vishay High Power Products Schottky Diode, 2 x A FEATURES Small foot print, surface mountable Very low forward voltage drop Extremely fast switching speed for high frequency operation Pb-free Available
AH287. General Description. Features. Typical Application Circuit HIGH VOLTAGE HALL-EFFECT SMART FAN MOTOR CONTROLLER. 24V Brush-Less DC Fan
Features General Description On Chip Hall Sensor Rotor-Locked Shutdown Automatically Restart Built-in Zener Protection for Output Driver Operating Voltage: 3.8V~28V Output Current: I O(AVE) = 400mA Lead
BZV55B2V4 ~ BZV55B75 Taiwan Semiconductor
5mW, 2% Tolerance Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - VZ Tolerance Selection of ±2% - Hermetically sealed glasss - Pb free and RoHS compliant - High reliability glass
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
Zener Diodes FEATURES
ZMYV9 to ZMY Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT range nom..9 to V FEATURES Silicon planar power Zener diodes For use in stablilizing and clipping circuits with high power rating
10A, 100V - 200V Trench Schottky Rectifier
A, 0V - 200V Trench Schottky Rectifier TSDH0CW - TSDH200CW FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency
ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
3A, 400V V Glass Passivated Bridge Rectifier
304G - 307G 3A, 400V - 000V Glass Passivated Bridge Rectifier FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High surge current capability UL
Glass Passivated Bridge Rectifier
Glass Passivated Bridge Rectifier UR3KB60 - UR3KB00 FEATURES Ideal for printed circuit board High case dielectric strength High surge current capability UL Recognized File # E-326243 Compliant to RoHS
ADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
S07B / 07D / 07G / 07J / 07M
Small Signal Fast Switching Diode, High Voltage Features For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 C/ 10 seconds
EFC2J013NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel
Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches
MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ
MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high
SG40N04S 40V N-CHANNEL POWER MOSFET
V DSS, 40V R DS(ON), 11mΩ (max.) @ V GS =10V R DS(ON), 16mΩ (max.) @ V GS =4.5V I D, 11A SOP-8 Description The SG40N04S uses advanced Trench technology and designs to provide excellent R DS(ON) with low
225mW SMD Switching Diode
225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant
5W, 15V Surface Mount Zener Diode
5W, 15V Surface Mount Zener Diode FEATURES Low profile package Ideal for automated placement Glass passivated junction Built-in strain relief Compliant to RoHS Directive 2011/65/EU and in accordance to
Fast Switching Plastic Rectifier
BY9(X,B)-00 thru BY9(X,B)-800 Fast Switching Plastic Rectifier TO-0AC BY9 Series PIN PIN CASE TO-63AB ITO-0AC BY9x Series PIN PIN FEATURES Glass passivated chip junction Superfast recovery time for high