ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET N/C SUMMARY V (BR)DSS = 450V; R DS(ON) = 50 ORDERING INFORMATION DEVICE MARKING ZXMN 0545
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1 45V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 45V; R DS(ON) = 5 ; I D = 14mA DESCRIPTION This 45V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. FEATURES High voltage SOT223 Low on-resistance Fast switching speed Low gate drive Low threshold SOT223 package variant engineered to increase spacing between high voltage pins APPLICATIONS Off-line power supply start-up circuitry ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMN545G4TA 7 12mm embossed 1, units N/C ZXMN545G4TC 13 12mm embossed 4, units DEVICE MARKING ZXMN 545 PINOUT - TOP VIEW 1
2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 45 V Gate Source Voltage V GS 2 V Continuous Drain Current (V GS =1V; T amb =25 C) (a) I D 14 ma Pulsed Drain Current (c) I DM 6 ma Continuous Source Current (Body Diode) (b) I S 14 A Pulsed Source Current (Body Diode) (c) I SM 6 A Power Dissipation at T amb =25 C (a) Linear derating factor P tot W mw/ C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 62.5 C/W Junction to Ambient (b) R θja 32 C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 2
3 ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated) PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS ZXMN545G4 Drain-Source Breakdown Voltage Gate-Source Threshold Voltage BV DSS 45 V I D =1mA, V GS =V V GS(th) 1 3 V I D =1mA, V DS =V GS Gate-Body Leakage I GSS 2 na V GS = 2V, V DS =V Zero Gate Voltage Drain Current I DSS 1 4 µa µa V DS =45 V, V GS =V V DS =45 V, V GS =V, T=125 C (2) On-State Drain Current (1) I D(on) 15 ma V DS =25 V, V GS =1V Static Drain-Source On-State R DS(on) 5 Ω V GS =1V, I D =ma Resistance (1) Forward Transconductance (1)(2) g fs ms V DS =25V, I D =ma Input Capacitance (2) C iss 7 pf Common Source Output C oss 1 pf V DS =25V, V GS =V, f=1mhz Capacitance (2) Reverse Transfer Capacitance (2) C rss 4 pf Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) t r 7 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns V DD =25V, I D =ma Fall Time (2)(3) t f 1 ns (1) Measured under pulsed conditions. Width=3µs. Duty cycle 2% (2) Sample test. (3) Switching times measured with 5Ω source impedance and <5ns rise time on a pulse generator 3
4 D S(o ) nd ID(On) Drain u e D ID(On)Drai C nt ( A) ZXMN545G4 TYPICAL CHARACTERISTICS C rrent (ma) t ain u VG S= 1V 8V 6V 5V n urre m 4 3 VG S= 1V 6V 5V 4V ID(On) On-Sta r V 2 3V 3V VDS - Drain Source Voltage (Volts) Output characteristics V DS - Drain Source Voltage (Volts) Saturation characteristics D rain Source Volta ge (Vols) t V D S mA C rre n t (ma) ma 5mA V DS= 25V VGS- G ate Source Voltage (Volts) Voltage saturation characteristics VGS- G ate Source Voltage (Volts) Transfer characteristics R D S (ON) -Dra in S ouce r R esistance ( ) VGS Gate Source Voltage (Volts) On-resistance vs gate-source voltage mA ma 5mA a VGS(th) Normalised R n S on) Drain-Source Resistance RD ( Ga te Th res hold Vo lta ge V S G ( t h) Tj -Junction Temperature (C) V GS= 1V.1A V GS= VDS 1mA Normalised R DS(on) and V GS(th) temperature 4
5 TYPICAL CHARACTERISTICS 5
6 PACKAGE OUTLINE PAD LAYOUT DETAILS mm inches Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches Millimeters Inches DIM DIM Min Max Min Max Min Max Min Max A e 2.3 BSC.95 BSC A e1 4.6 BSC.181 BSC b E b E C L D Zetex Semiconductors plc 26 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D München Germany Zetex Inc 7 Veterans Memorial Hwy Hauppauge, NY USA Zetex (Asia) Ltd Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) Fax: (49) europe.sales@zetex.com Telephone: (1) Fax: (1) usa.sales@zetex.com Telephone: (852) Fax: (852) asia.sales@zetex.com Telephone (44) Fax: (44) hq@zetex.com For international sales offices visit Zetex products are distributed worldwide. For details, see This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 6
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