N-Channel 40 V (D-S) MOSFET

Transcription

1 N-Channl 4 V (D-S) MOSFET SUM2N4-m7L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) MAX. I D (A) d Q g (TYP.) 4.7 at V GS = V 2.2 at V GS = 4.5 V 2 TO-263 Top Viw S D G 9 Ordring Information: SUM2N4-m7L-GE3 (Lad (Pb)-fr and Halogn-fr) FEATURES TrnchFET powr MOSFET % R g and UIS tstd Matrial catgorization: For dfinitions of complianc plas s APPLICATIONS Powr supply - Scondary synchronous rctification DC/DC convrtr Powr tools Motor driv switch G D S N-Channl MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unlss othrwis notd) PARAMETER SYMBOL LIMIT UNIT Drain-Sourc Voltag V DS 4 Gat-Sourc Voltag V GS ± 2 V T C = 25 C 2 d Continuous Drain Currnt (T J = 5 C) I D T C = 7 C 2 d A Pulsd Drain Currnt (t = μs) I DM 48 Avalanch Currnt I AS 92 Singl Avalanch Enrgy a L = mh E AS 423 mj Maximum Powr Dissipation a T C = 25 C P D 375 b T C = 25 C c 25 b W Oprating Junction and Storag Tmpratur Rang T J, T stg -55 to +75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambint (PCB Mount) c R thja 4 C/W Junction-to-Cas (Drain) R thjc.4 Nots a. Duty cycl %. b. S SOA curv for voltag drating. c. Whn mountd on " squar PCB (FR-4 matrial). d. Packag limitd. S4-763-Rv. B, 4-Apr-4 Documnt Numbr: 6292 For tchnical qustions, contact: pmostchsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 SUM2N4-m7L SPECIFICATIONS (T J = 25 C, unlss othrwis notd) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Sourc Brakdown Voltag V DS V GS = V, I D = 25 μa V Gat Thrshold Voltag V GS(th) V DS = V GS, I D = 25 μa Gat-Body Lakag I GSS V DS = V, V GS = ± 2 V - - ± 25 na Zro Gat Voltag Drain Currnt I DSS V DS = 4 V, V GS = V, T J = 25 C V DS = 4 V, V GS = V - - μa V DS = 4 V, V GS = V, T J = 75 C ma On-Stat Drain Currnt a I D(on) V DS V, V GS = V A Drain-Sourc On-Stat Rsistanc a V GS = V, I D = 3 A R DS(on) V GS = 4.5 V, I D = 2 A Ω Forward Transconductanc a g fs V DS = 5 V, I D = 2 A S Dynamic b Input Capacitanc C iss Output Capacitanc C oss V GS = V, V DS = 2 V, f = MHz pf Rvrs Transfr Capacitanc C rss Total Gat Charg c Q g Gat-Sourc Charg c Q gs V DS = 2 V, V GS = V, I D = 2 A nc Gat-Drain Charg c Q gd Gat Rsistanc R g f = MHz Ω Turn-On Dlay Tim c t d(on) Ris Tim c t r V DD = 2 V, R L = 2 Ω - 2 Turn-Off Dlay Tim c t d(off) I D A, V GEN = V, R g = Ω - 74 ns Fall Tim c t f Drain-Sourc Body Diod Ratings and Charactristics b (T C = 25 C) Pulsd Currnt I SM A Forward Voltag a V SD I F = A, V GS = V V Nots a. Puls tst; puls width 3 μs, duty cycl 2 %. b. Guarantd by dsign, not subjct to production tsting. c. Indpndnt of oprating tmpratur. Strsss byond thos listd undr Absolut Maximum Ratings may caus prmannt damag to th dvic. Ths ar strss ratings only, and functional opration of th dvic at ths or any othr conditions byond thos indicatd in th oprational sctions of th spcifications is not implid. Exposur to absolut maximum rating conditions for xtndd priods may affct dvic rliability. S4-763-Rv. B, 4-Apr-4 2 Documnt Numbr: 6292 For tchnical qustions, contact: pmostchsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 SUM2N4-m7L TYPICAL CHARACTERISTICS (25 C, unlss othrwis notd) V GS = V thru 3 V 2 6 I D - Drain Currnt (A) I D - Drain Currnt (A) 2 8 T C = 25 C 48 V GS = 2 V V DS -Drain-to-Sourc Voltag (V) Output Charactristics 4 T C = 25 C T C = - 55 C V GS - Gat-to-Sourc Voltag (V) Transfr Charactristics 4.5 T C = - 55 C 32 T C = 25 C.4 g fs -Transconductanc (S) T C = 25 C R DS(on) -On-Rsistanc (Ω).3.2. V GS = 4.5 V V GS = V I D -Drain Currnt (A) Transconductanc I D - Drain Currnt (A) On-Rsistanc vs. Drain Currnt 5 C - Capacitanc (pf) C iss C oss V GS - Gat-to-Sourc Voltag (V) I D = 2 A V DS = 2 V C rss V DS -Drain-to-Sourc Voltag (V) Capacitanc Q g - Total Gat Charg (nc) Gat Charg S4-763-Rv. B, 4-Apr-4 3 Documnt Numbr: 6292 For tchnical qustions, contact: pmostchsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 SUM2N4-m7L TYPICAL CHARACTERISTICS (25 C, unlss othrwis notd) 2. R DS(on) -On-Rsistanc (Normalizd) I D = 3 A V GS = V V GS = 4.5 V I S - Sourc Currnt (A). T J = 5 C T J = 25 C T J - Junction Tmpratur ( C) On-Rsistanc vs. Junction Tmpratur V SD - Sourc-to-Drain Voltag (V) Sourc-Drain Diod Forward Voltag.5.5 R DS(on) -On-Rsistanc (Ω) T J = 25 C T J = 5 C V GS(th) Varianc (V) I D = 5 ma I D = 25 μa V GS - Gat-to-Sourc Voltag (V) On-Rsistanc vs. Gat-to-Sourc Voltag T J -Tmpratur( C) Thrshold Voltag 5 I DM Limitd V DS -Drain-to-Sourc Voltag (V) I D = ma I D - Drain Currnt (A) Limitd by R DS(on) * T C = 25 C Singl Puls I D Limitd BVDSS Limitd μs ms ms ms, s, s, DC T J - Junction Tmpratur ( C) Drain Sourc Brakdown vs. Junction Tmpratur.. V DS -Drain-to-Sourc Voltag (V) * V GS > minimum V GS at which R DS(on) is spcifid Saf Oprating Ara S4-763-Rv. B, 4-Apr-4 4 Documnt Numbr: 6292 For tchnical qustions, contact: pmostchsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 l i f f t i i t SUM2N4-m7L TYPICAL CHARACTERISTICS (25 C, unlss othrwis notd) Normalizd Effctiv Transint Thrmal Impdanc Squar Wav Puls Duration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Ambint 2 n s n r a n T c a d v p c m l I d E m a r N o r m a T z h Duty Cycl = Singl Puls Squar Wav Puls Duration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Cas Not Th charactristics shown in th two graphs - Normalizd Transint Thrmal Impdanc Junction-to-Ambint (25 C) - Normalizd Transint Thrmal Impdanc Junction-to-Cas (25 C) ar givn for gnral guidlins only to nabl th usr to gt a ball park indication of part capabilitis. Th data ar xtractd from singl puls transint thrmal impdanc charactristics which ar dvlopd from mpirical masurmnts. Th lattr is valid for th part mountd on printd circuit board - FR4, siz " x " x.62", doubl sidd with 2 oz. coppr, % on both sids. Th part capabilitis can widly vary dpnding on actual application paramtrs and oprating conditions. maintains worldwid manufacturing capability. Products may b manufacturd at on of svral qualifid locations. Rliability data for Silicon Tchnology and Packag Rliability rprsnt a composit of all qualifid locations. For rlatd documnts such as packag/tap drawings, part marking, and rliability data, s S4-763-Rv. B, 4-Apr-4 5 Documnt Numbr: 6292 For tchnical qustions, contact: pmostchsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 TO-263 (D 2 PAK): 3-LEAD Packag Information -B- E -A- L2 A c2 D4 D2 D3 E K 6 E3 D L3 L D A A b2 b Dtail A c E2. M A M 2 PL - 5 L L4 DETAIL A (ROTATED 9 ) M b b SECTION A-A Nots. Plan B includs maximum faturs of hat sink tab and plastic. 2. No mor than 25 % of L can fall abov sating plan by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lad is for SUB, SYB. Thick lad is for SUM, SYM, SQM. 5. Us inchs as th primary masurmnt. 6. This fatur is for thick lad. c c c* INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A b b b Thin lad Thick lad c Thin lad Thick lad c D D D D D E E E E BSC 2.54 BSC K L L L L L4. BSC.254 BSC M ECN: T3-77-Rv. K, 3-Sp-3 DWG: 5843 Rvison: 3-Sp-3 Documnt Numbr: 798 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 AN826 RECOMMENDED MINIMUM PADS FOR D 2 PAK: 3-Lad.42 (.668).635 (6.29).355 (9.7) 45 (3.683) 35 (3.429).2 (5.8).5 (.257) Rcommndd Minimum Pads Dimnsions in Inchs/(mm) Rturn to Indx Documnt Numbr: Apr-5

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