PTF GOLDMOS Field Effect Transistor 12 Watts, 1.99 GHz
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1 查询 PTF41 供应商 GOLDMOS Fild Effct Transistor Watts, 1.99 GHz Dscription Th is a watt GOLDMOS FET intndd for larg signal amplifir applications from 1. to 2. GHz. It oprats at 38% fficincy with db minimum gain. Nitrid surfac passivation and full gold mtallization nsur xcllnt dvic liftim and rliability. Guarantd Prformanc at 1.99 GHz, 26 V DS - Output Powr = Watts Min - Powr Gain = db Min Full Gold Mtallization Silicon Nitrid Passivatd Excllnt Thrmal Stability Back Sid Common Sourc % Lot Tracability Typical Output Powr vs. Input Powr 16 Output Powr (Watts) = 5 ma f = 199 MHz PTF Input Powr (Watts) Packag 2249 RF Spcifications (Guarantd) Charactristic Symbol Min Typ Max Units Gain (, P OUT = 3 W, = 5 ma, f = 193, 199 MHz) G ps db Output Powr at 1 db Comprssion (, = 5 ma, f = 199 MHz) P-1dB Watts Drain Efficincy (, P OUT = W, = 5 ma, f = 199 MHz) h 38 % Load Mismatch Tolranc (, P OUT = W, = 5 ma, f = 199 MHz Y :1 all phas angls at frquncy of tst) All publishd data at T CASE = 25 C unlss othrwis indicatd. 1
2 Elctrical Charactristics (Guarantd) Charactristic Conditions Symbol Min Typ Max Units Drain-Sourc Brakdown Voltag V GS = V, I D = 1.8 ma BV DSS 65 Volts Drain-Sourc Lakag Currnt V DS = 28 V, V GS = V I DSS 1. µa Gat On Voltag V DS, I D = 5 ma V GS(on) Volts Maximum Ratings Paramtr Symbol Valu Unit Drain-Sourc Voltag V DSS 65 Vdc Gat-Sourc Voltag V GS ±2 Vdc Oprating Junction Tmpratur T J 2 C Total Dvic Dissipation P D 58 Watts Abov 25 C drat by.33 W/ C Storag Tmpratur T STG 15 C Thrmal Rsistanc (T CASE = 7 C) R qjc 3. C/W Typical Prformanc P OUT, Gain & Efficincy (at P-1dB) vs. Frquncy Gain (db) & Output Powr (W) XWSXWÃ3RZHUÃ = 5 ma 35 Gain Frquncy (MHz) Efficincy Efficincy (%) x Gain (db) x Broadband Tst Fixtur Prformanc Gain Efficincy = 5 ma - 5 P OUT = W Rturn Loss Frquncy (MHz) 6 Efficincy (%) Rturn Loss (db) 2
3 Typical Prformanc (cont.) 13 Powr Gain vs. Output Powr 18 Output Powr vs. Supply Voltag Powr Gain (db) x = 5 ma = 7 ma = 35 ma f = 199 MHz Output Powr (Watts) = 5 ma f = 199 MHz 6 1 Output Powr (Watts) Supply Voltag (Volts) 3rd Ordr IMD vs. Output Powr Capacitanc vs. Supply Voltag IMD (dbc) x , = 5 ma f 1 = 199. MHz, f 2 = MHz Cds and Cgs (pf) x C gs C ds V GS = V f = 1 MHz C dg Cdg (pf) x Output Powr (Watts-PEP) Supply Voltag (Volts) Bias Voltag (V) Bias Voltag vs. Tmpratur Voltag nomalizd to 1. V Sris show currnt (A) Tmp. ( C) 3
4 Impdanc Data, P OUT = W, = 5 ma Z = 5 W Z Sourc D Z Load G Frquncy Z Sourc W Z Load W MHz R jx R jx S Typical Scattring Paramtrs (V DS, I D = 5 ma) f S11 S21 S S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang
5 Tst Circuit Block Diagram for f = 2 GHz DUT LDMOS Transistor l1.141 l 2 GHz Microstrip 51.1 W l2.82 l 2 GHz Microstrip 51.1 W l3.41 l 2 GHz Microstrip 51.1 W l4.13 l 2 GHz Microstrip 8.77 W l5.169 l 2 GHz Microstrip 8.77 W l6.141 l 2 GHz Microstrip 51.1 W l7.269 l 2 GHz Microstrip 51.1 W C1,C7 uf, 35 V Capacitor, Digi-Ky PCS66 C2,C8.1uF, 5 V Capacitor, Digi-Ky PCC 3 BCT C3,C6, C9, C pf Capacitor, B C4 1. pf Capacitor, B 1R C5 1.4 pf Capacitor, B 1R4 C11.9 pf Capacitor, B R9 C 1.5 pf Capacitor, B 1R5 J1,J2 Connctor, SMA, Fmal, Panl Mount L1, L2 4 Turns, 2 AWG,. DIA I.D. L3 Frrit, 6mm Phillips 53/3/ R1, R2 Rsistor, 22ohmDigi-Ky 22ZTR R3 Rsistor, 1ohm, Ladd Digi-Ky 1.QBK Circuit Board.31" thick, r = 4., G2, AllidSignal, 2 oz. coppr Assmbly Diagram (not to scal) 5
6 Tst Circuit (cont.) Artwork (not to scal) Cas Outlin Spcifications Cas 2249 Ericsson Inc. Microlctronics Morgan Hill, CA 9537 USA GOLDMOS ( ) Unitd Stats Intrnational -mail: rfpowr@ricsson.com 6 Spcifications subjct to chang without notic. L3 Ericsson Inc All Rights Rsrvd EUS/KR Un Rv. C
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Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 8 MHz Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 790
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CMPA558525F 25 W, 5.5-8.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA558525F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
More information= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
CGHV965F1 5 W, 7.9-9.6 GHz, 5-ohm, Input/Output Matched GaN HEMT Cree s CGHV965F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
More informationWatts W/ C Storage Temperature Range T stg 65 to +200 C Operating Junction Temperature T J 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies
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Rev 4.0 May 2015 CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for
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Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 960 MHz Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationPackage: H: TO-252 P: TO-220 S: TO-263. Output Voltage : Blank = Adj 12 = 1.2V 15 = 1.5V 18 = 1.8V 25 = 2.5V 33 = 3.3V 50 = 5.0V 3.3V/3A.
Faturs Advancd Powr 3-Trminal ustabl or Fixd.V,.5V,.8V,.5V, 3.3V or 5.V Output Maximum Dropout.4V at Full Load Currnt Fast Transint Rspons Built-in Thrmal Shutdown Output Currnt Limiting Good Nois Rjction
More information= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
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CGHV1425 25 W, 12-14 MHz, GaN HEMT for L-Band Radar Systems Cree s CGHV1425 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and
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c26142fc_gr1 Thermally-Enhanced High Power RF LDMOS FET 14 W, 28 V, 26 269 MHz Description The is a 14-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 26
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c2412fc-gr1 Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 23 24 MHz Description The is a 1-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifi er
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More information= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.
CGHV96100F2 100 W, 8.4-9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN
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Freescale Semiconductor Technical Data Document Number: AFT23S170 13S Rev. 0, 6/2013 RF ower LDMOS Transistor N Channel nhancement Mode Lateral MOSFT This 45 watt RF power LDMOS transistor is designed
More informationDrain Efficiency (%) c262157sh-gr1. Characteristic Symbol Min Typ Max Unit. Gain Gps db. Adjacent Channel Power Ratio ACPR 31.
c2657sh-gr1 Thermally-Enhanced High Power RF LDMOS FET W, 28 V, 26 269 MHz Description The LDMOS FET is designed for use in Doherty cellular power applications in the 26 MHz to 269 MHz frequency band.
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CMPA83F 3 W,. - 8. GHz, GaN MMIC, Power Amplifier Cree s CMPA83F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
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Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W, 28 V, 1805 2200 MHz Description The is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation
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Technical Data Document Number: A2T21S260W12N Rev. 0, 1/2017 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 56 W RF power LDMOS transistor is designed for cellular base station
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