CMPA F. 25 W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Applications. Features
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- Elisabeth Parsons
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1 CMPA558525F 25 W, GHz, GaN MMIC, Power Amplifier Cree s CMPA558525F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 1 lead metal/ceramic flanged package for optimal electrical and thermal performance. PN: CMPA558525F Package Type: Typical Performance Over GHz (T C = 25 C) Parameter 5.8 GHz 6.4 GHz 7.2 GHz 7.9 GHz 8.4 GHz Units Small Signal Gain db Output Power W Power Gain db Power Added Efficiency % Note 1 : Measured at -3 dbc, 1.6 MHz from carrier, in the CMPA558525F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter =.2. Features Applications 25 db Small Signal Gain 35 W Typical P SAT Operation up to 28 V Point to Point Radio Communications Satellite Communication Uplink High Breakdown Voltage High Temperature Operation Rev 5. May 217 Size 1. x.385 inches Subject to change without notice. 1
2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage S 84 V DC 25 C Gate-source Voltage V GS -1, +2 V DC 25 C Power Dissipation P DISS 55 W Storage Temperature T STG -65, +15 C Operating Junction Temperature T J 225 C Maximum Forward Gate Current I GMAX 1 ma 25 C Soldering Temperature 1 T S 245 C Screw Torque τ 4 in-oz Thermal Resistance, Junction to Case R θjc 1.55 C/W OQPSK, 85 C, P DISS = 55 W Thermal Resistance, Junction to Case R θjc 1.8 C/W CW, 85 C, P DISS = 77 W Case Operating Temperature T C -4, +14 C P DISS = 55 W Case Operating Temperature T C -4, +85 C P DISS = 77 W Note: 1 Refer to the Application Note on soldering at Electrical Characteristics (Frequency = 5.5 GHz to 8.5 GHz unless otherwise stated; T C = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 1 Gate Threshold Voltage V GS(TH) V = 1 V, I D = 13.2 ma Gate Quiescent Voltage V GS(Q) -2.7 V DC = 28 V, I D = 285 ma Saturated Drain Current 2 I DS A = 6. V, V GS = 2. V Drain-Source Breakdown Voltage V BD 84 1 V V GS = -8 V, I D = 13.2 ma RF Characteristics 3 Small Signal Gain S db P IN = -2 dbm Input Return Loss S11 1 db = 285 ma Output Return Loss S22 6 db = 285 ma Output Mismatch Stress VSWR 5:1 Y Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in the CMPA558525F-AMP No damage at all phase angles, = 28 V, I DQ P OUT = 25W OQPSK Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 2 CMPA558525F Rev 5.
3 Electrical Characteristics Continued... (T C = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics 1,2,3,4 Power Added Efficiency PAE % Power Added Efficiency PAE % Power Added Efficiency PAE % Power Added Efficiency PAE % Power Gain G P db Power Gain G P db Power Gain G P db Power Gain G P db OQPSK Linearity ACLR db OQPSK Linearity ACLR db OQPSK Linearity ACLR db OQPSK Linearity ACLR db Notes: 1 Measured in the CMPA558525F-AMP 2 Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter =.2. 3 Measured at P AVE = 4 dbm. 4 Fixture loss de-embedded. Frequency = 5.8 GHz Frequency = 7.2 GHz Frequency = 7.9 GHz Frequency = 8.4 GHz Frequency = 5.8 GHz Frequency = 7.2 GHz Frequency = 7.9 GHz Frequency = 8.4 GHz Frequency = 5.8 GHz Frequency = 7.2 GHz Frequency = 7.9 GHz Frequency = 8.4 GHz Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 25 V) JEDEC JESD22 A114-D Charge Device Model CDM II (2 < 5 V) JEDEC JESD22 C11-C Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 3 CMPA558525F Rev 5.
4 Typical Performance of the CMPA558525F Figure 1. CMPA558525F Linear Output Power, Gain and PAE at -3 dbc, 1.6 MHz from carrier 1.6 Msps OQPSK Modulation 4 35 (W), Gain (db), & PAE (%) Output Power ( C Band Extended C Band Output Power X Band Gain PAE Frequency (GHz) 4 Figure 2. Typical Small Signal Gain and Return Loss vs Frequency of the CMPA558525F measured in CMPA558525F-AMP Amplifier Circuit. = 285 ma Small Signal Gain, Input and Output Return Loss (db) S21 (db) S11 (db) S22 (db) Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 4 CMPA558525F Rev 5.
5 Typical Performance of the CMPA558525F 5 Figure 3. CMPA558525F C-band Spectral Mask at 15 W PAE = 29.1% at 5.8 GHz, 28.5% at 6.4 GHz & 25.6% at 7.2 GHz GHz 6.4 GHz 7.2 GHz Mag gnitude (db) Frequency (MHz) 5 Figure 4. CMPA558525F X-band Spectral Mask at 15 W PAE = 25.6% at 7.9 GHz & 25.3% at 8.4 GHz GHz 8.4 GHz 2 Mag gnitude (db) Frequency (MHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 5 CMPA558525F Rev 5.
6 Typical Performance of the CMPA558525F Figure 5. CMPA558525F C-band Linearity, Gain, and PAE vs Average Output Power OQPSK, 1.6 Msps 1.6 MHz offset from center frequency (dbc) GHz Offset GHz Offset GHz Offset GHz Offset GHz Offset GHz Offset GHz Gain 5.8 GHz PAE 6.4 GHz Gain 6.4 GHz PAE 7.2 GHz Gain 7.2 GHz PAE Gain (db) & Power Added Efficiency (%) Average Output Power (dbm) Figure 6. CMPA558525F X-band Linearity, Gain, and PAE vs Average Output Power OQPSK, 1.6 Msps MHz offset from center frequency (dbc) GHz Offset GHz Offset GHz Offset GHz Offset GHz Gain 7.9 GHz PAE 8.4 GHz Gain 8.4 GHz PAE Gain (db) & Power Added Efficiency (%) Average Output Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 6 CMPA558525F Rev 5.
7 Typical Performance of the CMPA558525F Figure 7. CMPA558525F EVM vs Average Output Power 1.6 Msps OQPSK Modulation GHz 6.4 GHz 7.2 GHz 7.9 GHz 8.4 GHz 6 EVM (%) Figure 8. CMPA558525F - Linearity vs Average Output Power OQPSK, 1.6 Msps, I DS = 285 ma -1 Average Output Power (dbm) 1.6 MHz offset from center frequencyy (dbc) GHz 6.4 GHz 7.2 GHz 7.9 GHz 8.4 GHz Average Output Power (dbm) Figure 9. CMPA558525F Linearity vs Average Output Power IM3 5 MHz spacing GHz 6.4 GHz 7.2 GHz 7.9 GHz 8.4 GHz Linearity (dbc) Average Output Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 7 CMPA558525F Rev 5.
8 Typical Performance of the CMPA558525F Figure 1. CMPA558525F - C-band Output Power, Gain and PAE vs Input Power = 1.2 A, CW Gain (db) & PAE (%) GHz Gain 5.8 GHz PAE 6.4 GHz Gain 6.4 GHz PAE GHz Gain 7.2 GHz PAE Input Power (dbm) Figure 11. CMPA558525F - X-band Output Power, Gain and PAE vs Input Power = 1.2 A, CW GHz Gain 7.9 GHz PAE 8.4 GHz Gain 8.4 GHz PAE 3 Gain (db) & PAE (%) Input Power (dbm) Figure 12. CMPA558525F - Power, Gain and PAE vs Frequency = 1.2 A, CW Saturated Output Power (W) Psat Gain PAE Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 8 CMPA558525F Rev 5.
9 Typical Performance of the CMPA558525F Figure 13. CMPA558525F - Typical Drain Current vs Average Output Power OQPSK, 1.6 Msps 3.5 Drain Current (A) GHz 6.4 GHz 7.2 GHz 7.9 GHz 8.4 GHz Average Output Power (dbm) Figure 14. CMPA558525F - Intermodulation Distortion Products vs Tone Spacing = Vd 28 = V, 28IV, DS Idq = 285 ma, Center Center Freq = GHz GHz -1 Intermodula ation Distortion (dbc) IM3- IM5- IM7- IM3+ IM5+ IM Two-Tone Spacing (MHz) Note: Divergence in IM5 and IM7 at tone spacings greater than 2 MHz is due to the bias components on the test fixture. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 9 CMPA558525F Rev 5.
10 Typical Performance of the CMPA558525F 26 Figure 15. CMPA558525F - AM-AM = 285 ma GHz 7.2 GHz 7.9 GHz 8.4 GHz S21 Mag gnitude (db) Input Power (dbm) 25 Figure 16. CMPA558525F -Normalized AM-PM = 285 ma S21 Pha ase (degrees) GHz 7.2 GHz 7.9 GHz 8.4 GHz Input Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 1 CMPA558525F Rev 5.
11 Typical Performance of the CMPA558525F 5. Figure 17. CMPA558525F EVM vs Average Output Power 256 QAM EVM (%) EVM (%) 7.9 EVM (%) 8.4 EVM (%) 7.2 EVM (%) Output Power (dbm) Figure 18. CMPA558525F Linearity vs Average Output Power IM3, IM5, IM7, 5 MHz spacing -1-2 Linearity (dbc) -3-4 IM3 79 IM5 79 IM Output Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 11 CMPA558525F Rev 5.
12 CMPA558525F Power Dissipation De-rating Curve CMPA558525F Power Dissipation De-Rating Curve 9 8 Power Dissipation (W) Note Maximum Case Temperature ( C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 12 CMPA558525F Rev 5.
13 CMPA558525F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1, C3, C7, C8, C1, C13 CAP, 1. uf, +/-1%, 121, 1V, X7R 6 C2, C4, C5, C6, C9, C12 CAP, 33 pf, 85, 1V, X7R 6 C11, C14 CAP ELECT 3.3UF 8V FK SMD 2 R1, R2 RES. OHM 1/16W 42 SMD 2 J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 2MIL J3 CONNECTOR, HEADER, RT>PLZ.1CEN LK 9POS 1 - PCB, TACONIC, RF-35P-2-CL1/CL1 1 Q1 CMPA558525F 1 2 CMPA558525F-AMP Demonstration Amplifier Circuit Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 13 CMPA558525F Rev 5.
14 CMPA558525F-AMP Demonstration Amplifier Circuit CMPA558525F-AMP Demonstration Amplifier Circuit Outline Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 14 CMPA558525F Rev 5.
15 CMPA558525F-AMP Demonstration Amplifier Circuit To configure the CMPA558525F test fixture to enable independent V G1 / V G2 control of the device, a cut must be made to the microstrip line just above the R1 resistor as shown. Pin 9 will then supply V G1 and Pin 8 will supply V G2. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 15 CMPA558525F Rev 5.
16 Product Dimensions CMPA558525F (Package Type 44213) Pin Number Qty 1 Gate Bias for Stage 2 2 Gate Bias for Stage 2 3 RF In 4 Gate Bias for Stage 1 5 Gate Bias for Stage 1 6 Drain Bias 7 Drain Bias 8 RF Out 9 Drain Bias 1 Drain Bias 11 Source Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 16 CMPA558525F Rev 5.
17 Part Number System CMPA558525F Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 5.5 GHz Upper Frequency GHz Power Output 25 W Package Flange - Table 1. Note 1 : Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 1. GHz 2H = 27. GHz Table 2. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 17 CMPA558525F Rev 5.
18 Product Ordering Information Order Number Description Unit of Measure Image CMPA558525F GaN MMIC Each CMPA558525F-TB Test board without GaN MMIC Each CMPA558525F-AMP Test board with GaN MMIC installed Each Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 18 CMPA558525F Rev 5.
19 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of For more information, please contact: Sarah Miller Marketing Cree, RF Components Ryan Baker Marketing & Sales Cree, RF Components Tom Dekker Sales Director Cree, RF Components Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their respective owners and do not imply specific 19 CMPA558525F Rev 5.
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CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic
More informationmaintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm
CGHVF006S 6 W, DC - 5 GHz, 40V, GaN HEMT Cree s CGHVF006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
More informationMHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P
CGHV1425 25 W, 12-14 MHz, GaN HEMT for L-Band Radar Systems Cree s CGHV1425 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and
More information350 W, MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems. = 25 C) of Demonstration Amplifier
CGHV5935 35 W, 52-59 MHz, 5-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree s CGHV5935 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
More informationCGHV1J025D. 25 W, 18.0 GHz, GaN HEMT Die
Rev 2.0 May 2017 CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
More information= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
CMPA273575D 75 W, 2.7-3.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA273575D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
More information= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN
CMPA80B05D 5 W, 8.0 -.0 GHz, GaN MMIC, Power Amplifier Cree s CMP80B05D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has
More information= 25 C) Parameter 5.5 GHz 6.5 GHz 7.5 GHz 8.5 GHz Units Small Signal Gain db P OUT
CMPA5585030D 30 W, 5.5-8.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA5585030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
More informationPRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB
CMPADE030D PRELIMINARY 30 W, 3.75-4.5 GHz, 40 V, GaN MMIC, Power Amplifier Cree s CMPADE030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit
More informationCGHV1J070D. 70 W, 18.0 GHz, GaN HEMT Die
Rev 1.0 May 2017 CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
More informationCGHV60040D. 40 W, 6.0 GHz, GaN HEMT Die. Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms
Rev 1.1 March 2019 CGHV60040D 40 W, 6.0 GHz, GaN HEMT Die Cree s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium
More informationCGH80030D. 30 W, 8.0 GHz, GaN HEMT Die. 2-Way Private Radio. Broadband Amplifiers. Cellular Infrastructure. Test Instrumentation
CGH80030D 30 W, 8.0 GHz, GaN HEMT Die Cree s CGH80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on Cree s 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties
More informationDESCRIPTION. APPLICATIONS Microwave Radios Military Radios VSAT Telecom Infrastructure Test Equipment
KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface-Mount Technology (SMT) package for high reliability
More informationCCharacteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR 30 dbc. Output 0.01% CCDF OPAR 7 db
Advance GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 3600 MHz Description The GTRA364002FC is a 400-watt (P SAT ) GaN on SiC high electron mobility transistor (HEMT)
More informationGTVA123501FA. Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, MHz. Description. Features. RF Characteristics
g123501fa_gr300-1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 10 1400 MHz Description The is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 10 to 1400 MHz
More informationEfficiency (%) g261701fa-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
g26171fa-gr1a GTVA26171FA Thermally-Enhanced High Power RF GaN on SiC HEMT 17 W, 5 V, 26 269 MHz Description The GTVA26171FA is a 17-watt (P 3dB ) GaN on SiC high electron mobility transistor (HEMT) for
More informationEfficiency (%) gtra364002fc_g1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF GaN on SiC HEMT 0 W, 48 V, 30 30 MHz Description The is a 0-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular
More informationPTFB213004F. High Power RF LDMOS Field Effect Transistor 300 W, MHz. Description. Features. RF Characteristics
High Power RF LDMOS Field Effect Transistor W, 7 MHz Description The is a -watt LDMOS FET designed for class AB operation in cellular amplifiers covering the to 7 MHz frequency band. Features include high
More informationPTFC270051M. High Power RF LDMOS Field Effect Transistor 5 W, 28 V, MHz. Description. Features. RF Characteristics, 2170 MHz
c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz.
More informationGain: 960 MHz Gain: 1030 MHz Gain: 1090 MHz Gain: 1150 MHz Gain: 1215 MHz Eff: 960 MHz Eff: 1030 MHz Eff: 1090 MHz Eff: 1150 MHz Eff: 1215 MHz
g107001efc-gr3 Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 1215 MHz Description The is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz
More informationCharacteristic Symbol Min Typ Max Unit. Intermodulation Distortion IMD 35 dbc All published data at T CASE = 25 C unless otherwise indicated
PTFB950FL Thermally-Enhanced High Power RF LDMOS FET 40 W, 90 990 MHz Description The PTFB950FL is a 40-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 90
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
GTRA36282FC Thermally-Enhanced High Power RF GaN on SiC HEMT 28 W, 48 V, 34 36 MHz Description The GTRA36282FC is a 28-watt ( ) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR 7 7.
Thermally-Enhanced High Power RF GaN on SiC HEMT W, 48 V, 34 36 MHz Description The is a -watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
More informationPTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics
c271m-2.1-gr1c High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27
More informationPTFB211503FL. Thermally-Enhanced High Power RF LDMOS FET 150 W, MHz. Description. Features. RF Characteristics
PTFB50FL Thermally-Enhanced High Power RF LDMOS FET 50 W, 0 70 MHz Description The PTFB50FL is a thermally-enhanced, 50-watt, LDMOS FET designed for cellular power amplifier applications in the 0 to 70
More informationIMD Shoulder (dbc) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 8 W, 48 V, 746 960 MHz Description The PTRA094252FC is a 8-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746
More informationnot recommended for new design Efficiency (%) Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD dbc
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 1880 MHz Description The is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications. Features include
More informationPTFB193404F. Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, MHz. Description. Features. RF Characteristics
PTFB9404F Thermally-Enhanced High Power RF LDMOS FET 40 W, 0 V, 90 990 MHz Description The PTFB9404F is a 40 watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationMQ1470VP LDMOS TRANSISTOR
750W, 50V High Power RF LDMOS FETs Description The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for L band pulse application with frequencies 1.2 to 1.4GHz full band
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 2 W, 48, 746 821 MHz Description The PTA0827NF is a 2-watt LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard
More informationDrain Efficiency (%) b092707fh-gr1a. Characteristic Symbol Min Typ Max Unit
b9277fh-gr1a PTFB9277FH Thermally-Enhanced High Power RF LDMOS FET 27 W, 28 V, 925 96 MHz Description The PTFB9277FH is a 27-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications
More informationNME6003H GaN TRANSISTOR
Gallium Nitride 28V 25W, RF Power Transistor Description The NME6003H is a 25W, unmatched GaN HEMT, designed for multiple applications with frequencies up to 6GHz. NME6003H There is no guarantee of performance
More informationPreliminary GTVA126001EC/FC
g126001efc-gr1 Thermally-Enhanced High Power RF an on SiC HEMT 600 W, 50 V, 10 1400 MHz Description The TVA126001EC and TVA126001FC are 600-watt an on SiC high electron mobility transistors (HEMT) for
More informationQPA1003P 1 8 GHz 10 W GaN Power Amplifier
QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from
More informationGaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48, 755 805 MHz Description The is a 370-watt ( ) LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard cellular
More informationInnogration (Suzhou) Co., Ltd.
3400-3600MHz, 75W, 28V RF LDMOS FETs Description The ITCH36075B2 is a 75-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 805 MHz Description The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationra097008nb-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR
ra097008nb-gr1a Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 9 960 MHz Description The is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
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700W, 50V High Power RF LDMOS FETs Description The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. It is featured
More informationInnogration (Suzhou) Co., Ltd.
Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless access,
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 18 W, 28 V, 9 96 MHz Description The PTFB9182FC LDMOS FET is designed for use in power amplifier applications in the 9 MHz to 96 MHz frequency band. Features
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25W Power Packaged Transistor GaN HEMT on SiC Description The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety
More informationEfficiency (%) 1215 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 0 W, 50 V, 960 1215 MHz Description The PTVA1001EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
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18W, 12.5V High Power RF LDMOS FETs Description The MR2003C is a 18-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
More informationnot recommended for new design
c262808fv-gr1 Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 26 2690 MHz Description The is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationIMD D3 (dbc) Characteristic Symbol Min Typ Max Unit. Input Return Loss IRL 15 db
Wideband RF LDMOS Integrated Power Amplifier W, 2 V, 7 MHz Description The is a wideband, on chip matched, -watt, 2-stage LDMOS integrated power amplifier intended for wideband driver applications in the
More informationEfficiency (%) c241002fc-gr1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
c2412fc-gr1 Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 23 24 MHz Description The is a 1-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifi er
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FP28010060 50W, 28V GaN HEMT Die Description The FP28010060 is a 50W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for X-band operation
More informationEfficiency (%) ptra082808nf_g1. Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR
Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 8 MHz Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 790
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FP48007104 104W, 48V GaN HEMT D Description The FP48007104 is a 104W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
PXAC332FV Thermally-Enhanced High Power RF LDMOS FET 33 W, 28 V, 188 25 MHz Description The PXAC332FV is a 33-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power
More informationDrain Efficiency (%) 10 a120501ea_g1-1. Characteristic Symbol Min Typ Max Unit. Return Loss IRL 10 7 db
PTVA1201EA Thermally-Enhanced High Power RF LDMOS FET W, V, 1200 10 MHz Description The PTVA1201EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 10 MHz frequency band. Features
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 960 MHz Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
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Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
More informationDrain Efficiency (%) 1300 MHz 1400 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to frequency band. Features include high
More informationEfficiency (%) c261402fc_gr1. Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated
c26142fc_gr1 Thermally-Enhanced High Power RF LDMOS FET 14 W, 28 V, 26 269 MHz Description The is a 14-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 26
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FP48005340 340W, 48V GaN HEMT D Description The FP48005340 is a 340W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
More informationFP Description. Features. Applications. Packaging Information. 260W, 48V GaN HEMT D
FP48005260 260W, 48V GaN HEMT D Description The FP48005260 is a 260W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
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700W, 50V High Power RF LDMOS FETs Description The MQ1271VP is a 700-watt, high performance, internally matched LDMOS FET, designed for multiple applications with frequencies 960 to 1215MHz. It is featured
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
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