Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

Transcription

1 Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W, 28 V, MHz Description The is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 20 W and 40 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads. Peak/Average Ratio, (db) Single-carrier WCDMA Drive-up I DQ1P = 40 ma, V GS2P = 2.6 V, ƒ = 2200 MHz, 3GPP WCDMA signal, PAR = 10 db, 3.84 MHz BW Efficiency 0.01% CCDF 0 ptnc210604md_g Average Output Power (dbm) Efficiency (%) Package PG-HB1DSO-14-1 Features On-chip matching for broadband operation Typical CW performance, 2200 MHz, 28 V, combined outputs - Output power at P3dB = 63 W - Linear = 28 db - Efficiency = 50.5% Capable of handling 10:1 V, 10 W mod avg output power Integrated ESD protection Human Body Model Class 1A (per ANSI/ESDA/ JEDEC JS-001) Integrated temperature compensation Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) I DQ1P = 40 ma, V GS2P = 2.6 V, P OUT = 10 W avg, ƒ = 2200 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = % CCDF Characteristic Symbol Min Typ Max Unit G ps db Drain Efficiency h D % Adjacent Channel Power Ratio ACPR dbc Output PAR at 0.01% probability on CCDF OPAR db All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions!

2 2 DC Characteristics Characteristics Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, I DS = 51.7 µa V( BR)DSS 64 V Drain Leakage Current Stage 1 V DS = 28 V, V GS = 0 V I DSS 0.1 µa V DS = 60 V, V GS = 0 V I DSS 1.0 µa Drain Leakage Current Stage 2 V DS = 28 V, V GS = 0 V I DSS 0.1 µa V DS = 60 V, V GS = 0 V I DSS 1.0 µa Gate Leakage Current Stage 1 V GS = 1 V, V DS = 0 V I GSS 0.1 µa Gate Leakage Current Stage 2 V GS = 1 V, V DS = 0 V I GSS 0.1 µa On-State Resistance Stage 1 (Main) V GS = 10 V, V DS = 0.1 V R DS(on) 5.8 W on-state Resistance Stage 1 (Peak) V GS = 10 V, V DS = 0.1 V R DS(on) 3.7 W On-State Resistance Stage 2 (Main) V GS = 10 V, V DS = 0.1 V R DS(on) 0.66 W On-State Resistance Stage 2 (Peak) V GS = 10 V, V DS = 0.1 V R DS(on) 0.33 W Operating Gate Voltage V DS = 28 V, I DQ1M = 63 ma V GS V V DS = 28 V, I DQ2M = 150 ma V GS V V DS = 28 V, I DQ1P = 40 ma V GS V V DS = 28 V V GS V Fixture Operating Gate Voltage V DS = 28 V, I DQ1M = 63 ma V GS V V DS = 28 V, I DQ2M = 150 ma V GS V V DS = 28 V, I DQ1P = 40 ma V GS V V DS = 28 V V GS V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +150 C

3 3 Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance Stage 1 (T CASE = 70 C, 12 W CW) R qjc 4.6 C/W Stage 2 (T CASE = 70 C, 12 W CW) R qjc 1.5 C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD C Ordering Information Type and Version Order Code Package Shipping V1 R5 -V1-R5 PG-HB1DSO-14-1 Tape & Reel, 500 pcs Typical Performance (data taken in test fixture, 2100 MHz to 2200 MHz) Single-carrier WCDMA Drive-up I DQ1P = 40 ma, V GS2P = 2.6 V, ƒ = 2200 MHz, 3GPP WCDMA signal, PAR = 10 db, 3.84 MHz BW Single-carrier WCDMA Broadband Performance I DQ1P = 40 ma, V GS2P = 2.6 V, P OUT = 40 dbm, 3GPP WCDMA signal, PAR = 10 db 55 ACP Up & Low (dbc) ACP Low ACP Up Efficiency Efficiency (%) (db) Efficiency Efficiency (%) -60 ptnc210604md_g Average Output Power (dbm) 10 ptnc210604md_g Frequency (MHz)

4 4 Typical Performance (data taken in test fixture, 2100 MHz to 2200 MHz) Single-carrier WCDMA Broadband Performance I DQ1P = 40 ma, V GS2P = 2.6 V, P OUT = 40 dbm, 3GPP WCDMA signal, PAR = 10 db -28 CW Performance I DQ1P = 40 ma, V GS2P = 2.6 V ACP (dbc) ACPL ACPU Frequency (MHz) (db) Efficiency 0 0 ptnc210604md_g4 ptnc210604md_g Output Power (dbm) 2100 MHz 2150 MHz 2200 MHz 2100 MHz Eff 2150 MHz Eff 2200 MHz Eff Efficiency (%) Small Signal CW & Input Return Loss V DD = 28 V, I DQ1 = 34 ma, I DQ2 = 148 ma IMD versus two-tone spacing I DQ1P = 40 ma, V GS2P = 2.6 V, (ƒ1+ƒ2)/2 = Center Frequency of 2155 MHz (db) Input Return Loss Input Return Loss (db) IMD (dbc) IM7L IM7U IM3U IM3L IM5L IM5U ptnc210604md_g Frequency (MHz) Two-tone Spacing (MHz) ptnc210604md_g7

5 5 Load Pull Performance Main Side Load Pull Performance Pulsed CW signal: 1 ms, 10% duty cycle, 28 V, I DQ =63 ma, 150 ma Freq [MHz] Zs Max Output Power Max j j j j j j j j j j j j j j j j j j Freq [MHz] Zs Max Output Power Max j j j j j j j j j j j j j j j j j j Peak Side Load Pull Performance Pulsed CW signal: 1 ms, 10% duty cycle, 28 V, I DQ = 40 ma, V GS2P = 2.6 V Freq [MHz] Zs Max Output Power Max j j j j j j j j j j j j j j j j j j Freq [MHz] Zs Max Output Power Max j j j j j j j j j j j j j j j j j j

6 pt n c m d_ C D_ Reference Circuit, MHz VDD1M VDD2M (244) VG2M VG1M R105 C112 C111 C202 C201 C203 RO4350, 20 MIL, 2 oz R104 R109 R108 C104 R101 C102 C103 C101 C204 C209 RF_IN U1 C210 C211 RF_OUT R102 R103 C106 C105 C107 C208 R110 C108 R106 R111 C109 VG1P R107 VG2P C110 C205 C206 C207 _04A 2p1G VDD1P VDD2P Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT -V1 Test Fixture Part No. LTN/-V1 PCB Rogers 4350, mm [0.020 ] thick, 2 oz. copper, ε r = 3.66, ƒ = MHz Find Gerber files for this test fixture on the Wolfspeed Web site at

7 p t m c m d _ P D _ Reference Circuit, MHz (cont.) Components Information Component Description Manufacturer P/N C101, C103, C105, C107, Capacitor, 4.7 µf Murata Electronics North America GRM32ER71H475KA88L C109, C111, C202, C206 C102, C104, C106, C108, Capacitor, 10 µf Taiyo Yuden UMK325C7106MM-T C110, C112, C203, C207 C201, C205 Capacitor, 10 pf ATC ATC800A100JT250T C204 Capacitor, 1.8 pf ATC ATC600F1R8BT250XT C208 Capacitor, 2.0 pf ATC ATC600F2R0BT250XT C209 Capacitor, 2.7 pf ATC ATC600F2R7BT250XT C210, C211 Capacitor, 8.2 pf ATC ATC600F8R2BT250XT R101, R103 Resistor, 0 ohms Panasonic Electronic Components ERJ-3GEY0R00V R102 Resistor, 50 ohms Anaren C16A50Z4 R104, R105, R106, R107 Resistor, 1K ohms Panasonic Electronic Components ERJ-8GEYJ102V R108, R109, R110, R111 Resistor, 4.3K ohms Panasonic Electronic Components ERJ-8GEYJ432V U1 Hybrid Coupler Anaren X3C21P1-04S Pinout Diagram (top view) VD1 A 1 VG2 A 2 VG1 A RFIN A VD2/RFOUT A N/C 5 N/C 6 N/C 7 N/C 8 RFIN B VG1 B VG2 B VD1B VD2/RFOUT B Source: plated copper heat slug on backside of package Lead connections for

8 PG-HB1DSO-14-1_01_ PG-HB1DSO-14L_01_ Package Outline Specifications Package PG-HB1DSO-14-1 (top view) 2X X X X X MAX Y X X X Z ± Z (5:1) 0 MIN X X STAND OFF R ± Diagram Notes unless Notes unless otherwise specified: VIEWÊY 1. Mold/Dam 1. Mold/dam Bar/Metal bar/metal protusion protrusion of 0.mm of 0. max mm per max side per not side included. not included. 2. Metal 2. protrusion Metal protrusions are connected are connected to source to and source shall and not shall exceed not exceed 0.10mm 0.10 max. mm max. 3. Fillets 3. Fillets and radii: and all radii: all are radii 0.3 are mm 0. max. mm max x Interpret Interpret dimensions dimensions and tolerances and tolerances per ISO per ISO Dimensions 5. Dimensions are mm. are mm. 6. All tolerances 6 All tolerances ± 0.1mm ± 0.1 unless mm unless specified specified otherwise. otherwise. 7. All metal 7. All surfaces metal surfaces pre-plated, pre-plated, except except area of area cut. of cut. 8. Lead 8. thickness: Lead thickness: 0.25 mm mm. 9. Gold 9. plating Gold plating thickness: thickness: 0.25 micron 0.25 micron [10 microinch] max. max

9 PG-HB1DSO-14-1_01_ Package Outline Specifications Package PG-HB1DSO-14-1 (bottom view) VIEWÊY x Diagram Notes unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0. mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0. mm max. 4. Interpret dimensions and tolerances per ISO Dimensions are mm. 6 All tolerances ± 0.1 mm unless specified otherwise. 7. All metal surfaces pre-plated, except area of cut. 8. Lead thickness: 0.25 mm. 9. Gold plating thickness: 0.25 micron max.

10 10 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) Advance All Data Sheet reflects advance specification for product development Advance All Updated single-carrier specs, DC characteristics, converted to Wolfspeed Data Sheet Production All Data Sheet reflects released product specification Production 6 Corrected test fixture part no. For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc.