CR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Mar

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1 Thyristor Low Power Use REJG4- Rev.. Mar.8. Features I T (AV) :. A V DRM : 4 V I GT : µa Planar Passivation Type Completed Pb free product Outline RENESAS Package code: PRSSDE-A (Package name: TO-9()). Cathode. Anode. Gate Applications Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic equipment, strobe flasher, and other general purpose control applications Maximum Ratings Parameter Symbol Voltage class Repetitive peak reverse voltage V RRM 4 V Non-repetitive peak reverse voltage V RSM V reverse voltage V R () V Repetitive peak off-state voltage Note V DRM 4 V off-state voltage Note V D () V 8 Unit Rev.., Mar.8., page of

2 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS).4 A Average on-state current I T (AV). A Commercial frequency, sine half wave 8 conduction, Ta = C Surge on-state current I TSM A 6Hz sine half wave full cycle, peak value, non-repetitive I t for fusing I t.4 A s Value corresponding to cycle of half wave 6Hz, surge on-state current Peak gate power dissipation P GM. W Average gate power dissipation P G (AV). W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM. A Junction temperature Tj 4 to + C Storage temperature Tstg 4 to + C Mass. g Typical value Notes:. With gate to cathode resistance R GK = kω. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM. ma Tj = C, V RRM applied Repetitive peak off-state current I DRM. ma Tj = C, V DRM applied, R GK = kω On-state voltage V TM.6 V Ta = C, I TM =.6 A, instantaneous value Gate trigger voltage V GT.8 V Tj = C, V D = 6 V, I T =. A Note Gate non-trigger voltage V GD. V Tj = C, V D = / V DRM, R GK = kω Gate trigger current I GT Note µa Tj = C, V D = 6 V, I T =. A Note Holding current I H ma Tj = C, V D = V, R GK = kω Thermal resistance R th (j-a) 8 C/W Junction to ambient Notes:. If special values of I GT are required, choose item E from those listed in the table below if possible. Item B E I GT (µa) to to The above values do not include the current flowing through the kω resistance between the gate and cathode.. I GT, V GT measurement circuit. A 6Ω V I GS I GT A A R GK V kω V GT Switch TUT 6V Switch : IGT measurement Switch : VGT measurement (Inner resistance of voltage meter is about kω) Rev.., Mar.8., page of

3 Performance Curves Maximum On-State Characteristics Rated Surge On-State Current On-State Current (A) Ta = C Surge On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 6Hz) Gate Voltage (V) Gate Characteristics V FGM = 6V P GM =.W P G(AV) =.W V GT =.8V I GT = µa (Tj = C) V GD =.V I FGM =.A (%) Gate Trigger Current (Tj = t C) Gate Trigger Current (Tj = C) Gate Trigger Current vs Gate Current (ma) ( C) Gate Trigger Voltage (V) Gate Trigger Voltage vs. Distribution Transient Thermal Impedance ( C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) ( C) Time (s) Rev.., Mar.8., page of

4 Maximum Average Power Dissipation (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Average Power Dissipation (W) Average Power Dissipation (W) = Maximum Average Power Dissipation (Single-Phase Full Wave) = 6 Ambient Temperature ( C) Ambient Temperature ( C) = Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Resistive loads 6 Natural convection 8 6. Resistive loads Natural convection.4 = Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Average Power Dissipation (W) = Ambient Temperature ( C) Natural convection 6 = Rev.., Mar.8., page 4 of

5 (%) Breakover Voltage (Tj = t C) Breakover Voltage (Tj = C) Breakover Voltage vs. ( C) (%) Breakover Voltage (RGK = rkω) Breakover Voltage (R GK = kω) Breakover Voltage vs. Gate to Cathode Resistance R GK = kω Tj = C 6 4 Gate to Cathode Resistance (kω) (%) Breakover Voltage (dv/dt = vv/µs) Breakover Voltage (dv/dt = V/µs) 8 6 Breakover Voltage vs. Rate of Rise of Off-State Voltage # 4 # # I GT( C)=µA # I GT( C)=66µA Tj = C, R GK = kω Rate of Rise of Off-State Voltage (V/µs) Holding Current (ma) Holding Current vs. Distribution Tj = C I H( C) = ma I GT( C) = µa ( C) (%) Holding Current (R GK = rkω) Holding Current (RGK = kω) 4 Holding Current vs. Gate to Cathode Resistance # # I GT( C) IH(kΩ) # µa.6ma # 9µA.8mA Tj = C Gate to Cathode Resistance (kω) (%) Repetitive Peak Reverse Voltage (Tj = t C) Repetitive Peak Reverse Voltage (Tj = C) Repetitive Peak Reverse Voltage vs ( C) Rev.., Mar.8., page of

6 Gate Trigger Current vs. Gate Current Pulse Width (%) Gate Trigger Current (tw) Gate Trigger Current () 4 4 # # I GT( C) # µa # 66µA Tj = C 4 4 Gate Current Pulse Width (µs) Rev.., Mar.8., page 6 of

7 Package Dimensions JEITA Package Code SC-4A RENESAS Code PRSSDE-A Package Name TO-9() MASS[Typ.].g Unit: mm 4.8 ±..8 ±.. ±..6 Max. Max.. Max. Min.4 Max..4 Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack Type name -E Form A8 Taping Type name ETZ -ETZ Note : Please confirm the specification about the shipping in detail. Rev.., Mar.8., page of

CR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Aug Planar Passivation Type

CR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Aug Planar Passivation Type CRAM-8 Thyristor Low Power Use REJG1-1 Rev.1. Aug..4 Features I T (AV) :. A V DRM : 4 V I GT : 1 µa Planar Passivation Type Outline TO-9 1 1. Cathode. Anode. Gate 1 Applications Solid state relay, leakage